4 AK /Diodes RB717F a RB 7 1 7 - (BA 3-H /Under Development) YYUINYLLESAY PWBY ay he-NUP SETAE Silicon Epitaxial Schottky Barrier Diode Hk @ A924 4K / Dimensions (Unit : mm) 1) PA-FIELYIL ATT. 2) STE-WK, 0.9+0.1 2.0+0.2 Se (=tF CHS. 1.30.1 Features ny wall] Kk KO O~ 01-4 5 |- (lle 1) Anode-common twin type q |g 2) Minimoid 5 3) High reliability O14 ay ail Min. - 0.15+0 ae es AE A BRAT vy FLG @ Applications For general detection and high-speed switching @ 318 A 4 / Absolute Maximum Ratings (Ta = 25C) Parameter Symbol Limits Unit By RULE-7HBE Vam 25 Vv BRST Vr 20 Vv FERS lo 30 mA AY YY B* IFSM 200 : mA HOHE AERA Tj 40 ~+ 125 REE A Tstg 40~+ 125 * 60HZ +1 @ BRA HtH Y/ Electrical Characteristics (Ta = 25C) Parameter Symbol | Min. Typ. Max. Unit Conditions BAER IR 1 pA Va = 10V ASE VE 0.37 Vv Ip = 1mA FSB G | | 20 pF | Va=1V.f=1MHz 1294