PLL Frequency Synthesizer
Data Sheet
ADF4107
Rev. D Document Feedback
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FEATURES
7.0 GHz bandwidth
2.7 V to 3.3 V power supply
Separate charge pump supply (VP) allows extended tuning
voltage in 3 V systems
Programmable dual-modulus prescaler
8/9, 16/17, 32/33, 64/65
Programmable charge pump currents
Programmable antibacklash pulse width
3-wire serial interface
Analog and digital lock detect
Hardware and software power-down mode
APPLICATIONS
Broadband wireless access
Satellite systems
Instrumentation
Wireless LANs
Base stations for wireless radio
GENERAL DESCRIPTION
The ADF4107 frequency synthesizer can be used to implement
local oscillators in the upconversion and downconversion sections
of wireless receivers and transmitters. It consists of a low noise
digital PFD (phase frequency detector), a precision charge pump, a
programmable reference divider, programmable A and B counters,
and a dual-modulus prescaler (P/P + 1). The A (6-bit) and B
(13-bit) counters, in conjunction with the dual-modulus
prescaler (P/P + 1), implement an N divider (N = BP + A). In
addition, the 14-bit reference counter (R counter), allows
selectable REFIN frequencies at the PFD input. A complete PLL
(phase-locked loop) can be implemented if the synthesizer is
used with an external loop filter and VCO (voltage controlled
oscillator). Its very high bandwidth means that frequency
doublers can be eliminated in many high frequency systems,
simplifying system architecture and reducing cost.
FUNCTIONAL BLOCK DIAGRAM
03338-001
CLK
DATA
LE
REF
IN
RF
IN
A
RF
IN
B
24-BI T INP UT
REGISTER
SD
OUT
AV
DD
DV
DD
CE AGND DGND
14-BIT
R COUNTER
R COUNTER
LATCH
22
14
FUNCTION
LATCH
A, B COUNTE R
LATCH
FROM
FUNCTION
LATCH
PRESCALER
P/P + 1
N = BP + A
LOAD
LOAD
13-BIT
B COUNTER
6-BIT
A COUNTER
6
19
13
M3 M2 M1
MUX
SD
OUT
AV
DD
HIGH Z
MUXOUT
CPGND R
SET
V
P
CP
PHASE
FREQUENCY
DETECTOR
LOCK
DETECT
REFERENCE
CHARGE
PUMP
CURRENT
SETTING 1
ADF4107
CPI3 CPI2 CPI1 CPI6 CPI5 CPI4
CURRENT
SETTING 2
Figure 1.
ADF4107* PRODUCT PAGE QUICK LINKS
Last Content Update: 11/29/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
•ADF4107 Evaluation Board
DOCUMENTATION
Application Notes
•AN-349: Keys to Longer Life for CMOS
•AN-873: Lock Detect on the ADF4xxx Family of PLL
Synthesizers
•Ask the Applications Engineer - PLL Synthesizers
Data Sheet
•ADF4107: PLL Frequency Synthesizer Data Sheet
User Guides
•UG-161: PLL Frequency Synthesizer Evaluation Board
•UG-476: PLL Software Installation Guide
TOOLS AND SIMULATIONS
• ADIsimPLL™
•ADIsimRF
•dt_ADF411x_Register_Configuration
REFERENCE MATERIALS
Product Selection Guide
•RF Source Booklet
•RF, Microwave, and Millimeter Wave IC Selection Guide
2017
Technical Articles
•Phase Locked Loops for High-Frequency Receivers and
Transmitters – Part 1
•Phase Locked Loops for High-Frequency Receivers and
Transmitters – Part 3
•Phase-Locked Loops for High-Frequency Receivers and
Transmitters - Part 2
DESIGN RESOURCES
•ADF4107 Material Declaration
•PCN-PDN Information
•Quality And Reliability
•Symbols and Footprints
DISCUSSIONS
View all ADF4107 EngineerZone Discussions.
SAMPLE AND BUY
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TECHNICAL SUPPORT
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number.
DOCUMENT FEEDBACK
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ADF4107 Data Sheet
Rev. D | Page 2 of 20
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Timing Characteristics ................................................................ 4
Absolute Maximum Ratings ............................................................ 5
ESD Caution .................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6
Typical Performance Characteristics ............................................. 7
Functional Description .................................................................... 9
Reference Input Stage ................................................................... 9
RF Input Stage ............................................................................... 9
Prescaler (P/P + 1) ........................................................................ 9
A and B Counters ......................................................................... 9
R Counter ...................................................................................... 9
Phase Frequency Detector and Charge Pump ..............................9
MUXOUT and Lock Detect ...................................................... 10
Input Shift Register .................................................................... 10
Latch Summary........................................................................... 11
Reference Counter Latch Map .................................................. 12
AB Counter Latch Map ............................................................. 13
Function Latch Map ................................................................... 14
Initialization Latch Map ............................................................ 15
Function Latch ............................................................................ 16
Initialization Latch ..................................................................... 17
Device Programming after Initial Power-Up ............................. 17
Applications ..................................................................................... 18
Local Oscillator for LMDS Base Station Transmitter ............ 18
Interfacing ................................................................................... 19
PCB Design Guidelines for Chip Scale Package .................... 19
Outline Dimensions ....................................................................... 20
Ordering Guide .......................................................................... 20
REVISION HISTORY
3/13—Rev. C to Rev. D
Changed RFINA to RFINB Parameter from ±320 mV to ±600 mV,
Table 3 ................................................................................................ 5
Updated Outline Dimensions ....................................................... 20
Changes to Ordering Guide .......................................................... 20
11/12—Rev. B to Rev. C
Changed EVAL-ADF411xEBZ1 to EV-ADF411XSD1Z ............. 4
Changes to Table 3 ............................................................................ 5
Updated Outline Dimensions ....................................................... 20
Changes to Ordering Guide .......................................................... 20
9/11—Rev. A to Rev. B
Changes to Normalized Phase Noise Floor (PNSYNTH) Parameter,
Table 1 ................................................................................................ 3
Added Normalized 1/f Noise (PN1_f) Parameter and Endnote 11,
Table 1 ................................................................................................ 3
Changed EVAL-ADF4107EB1 to EVAL-ADF411xEBZ1 ............ 4
Changes to Figure 4 and Table 4 ..................................................... 6
Updated Outline Dimensions ....................................................... 20
Changes to Ordering Guide .......................................................... 20
4/07—Rev. 0 to Rev. A
Updated Format .................................................................. Universal
Changes to REFIN Characteristics Section ................................... 3
Changes to Noise Characteristics Section ...................................... 4
Changes to Absolute Maximum Ratings Section .......................... 5
Changes to Figure 23 ...................................................................... 12
Changes to Ordering Guide .......................................................... 20
5/03—Revision 0: Initial Version
Data Sheet ADF4107
Rev. D | Page 3 of 20
SPECIFICATIONS
AVDD = DVDD = 3 V ± 10%, AVDD ≤ VP ≤ 5.5 V, AGND = DGND = CPGND = 0 V, RSET = 5.1 kΩ, dBm referred to 50 Ω, TA = TMAX to TMIN,
unless otherwise noted.
Table 1.
Parameter B Version1 B Chips2 (Typ) Unit Test Conditions/Comments
RF CHARACTERISTICS
RF Input Frequency (RFIN)3 1.0/7.0 1.0/7.0 GHz min/max See Figure 18 for input circuit
RF Input Sensitivity –5/+5 –5/+5 dBm min/max
Maximum Allowable Prescaler Output
Frequency4
300 300 MHz max
REFIN CHARACTERISTICS
REFIN Input Frequency 20/250 20/250 MHz min/max For f < 20 MHz, ensure slew rate >50 V/µs
REFIN Input Sensitivity5 0.8/VDD 0.8/VDD V p-p min/max Biased at AVDD/26
REF
IN
Input Capacitance
10
10
pF max
REFIN Input Current ±100 ±100 µA max
PHASE DETECTOR
Phase Detector Frequency
7
104
104
MHz max
ABP = 0,0 (2.9 ns antibacklash pulse width)
CHARGE PUMP Programmable; see Figure 25
ICP Sink/Source
High Value 5 5 mA typ With RSET = 5.1 kΩ
Low Value 625 625 µA typ
Absolute Accuracy 2.5 2.5 % typ With RSET = 5.1 kΩ
RSET Range 3.0 to 11 3.0 to 11 kΩ typ See Figure 25
ICP Three-State Leakage 1 1 nA typ
Sink and Source Current Matching 2 2 % typ 0.5 V ≤ VCP ≤ VP − 0.5 V
ICP vs. VCP 1.5 1.5 % typ 0.5 V ≤ VCP ≤ VP − 0.5 V
ICP vs. Temperature 2 2 % typ VCP = VP/2
LOGIC INPUTS
VIH, Input High Voltage 1.4 1.4 V min
VIL, Input Low Voltage 0.6 0.6 V max
IINH, IINL, Input Current ±1 ±1 µA max
CIN, Input Capacitance 10 10 pF max
LOGIC OUTPUTS
VOH, Output High Voltage 1.4 1.4 V min Open-drain output chosen; 1 kΩ pull-up
resistor to 1.8 V
VOH, Output High Voltage VDD − 0.4 VDD − 0.4 V min CMOS output chosen
IOH 100 100 µA max
VOL, Output Low Voltage 0.4 0.4 V max IOL = 500 µA
POWER SUPPLIES
AVDD 2.7/3.3 2.7/3.3 V min/V max
DVDD AVDD AVDD
VP AVDD/5.5 AVDD/5.5 V min/V max AVDD ≤ VP ≤ 5.5 V
IDD8 (AIDD + DIDD) 17 15 mA max 15 mA typ
IP 0.4 0.4 mA max TA = 25°C
Power-Down Mode
9
(AI
DD
+ DI
DD
)
10
10
µA typ
NOISE CHARACTERISTICS
Normalized Phase Noise Floor (PNSYNTH)10 −223 −223 dBc/Hz typ PLL loop BW = 500 kHz, measured at
100 kHz offset
Normalized 1/f Noise (PN1_f)11 −122 −122 dBc/Hz typ 10 kHz offset; normalized to 1 GHz
ADF4107 Data Sheet
Rev. D | Page 4 of 20
Parameter B Version1 B Chips2 (Typ) Unit Test Conditions/Comments
Phase Noise Performance12 @ VCO output
900 MHz Output13 −93 −93 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
6400 MHz Output14 −76 −76 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
6400 MHz Output15 −83 −83 dBc/Hz typ @ 1 kHz offset and 1 MHz PFD frequency
Spurious Signals
900 MHz Output13 −90/−92 −90/−92 dBc typ
@ 200 kHz/400 kHz and 200 kHz PFD
frequency
6400 MHz Output14 −65/−70 −65/−70 dBc typ
@ 200 kHz/400 kHz and 200 kHz PFD
frequency
6400 MHz Output15 −70/−75 −70/−75 dBc typ @ 1 MHz/2 MHz and 1 MHz PFD frequency
1 Operating temperature range (B version) is −40°C to +85°C.
2 The B chip specifications are given as typical values.
3 Use a square wave for lower frequencies, below the minimum stated.
4 This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency that
is less than this value.
5 AVDD = DVDD = 3 V.
6 AC-coupling ensures AVDD/2 bias.
7 Guaranteed by design. Sample tested to ensure compliance.
8 TA = 25°C; AVDD = DVDD = 3 V; P = 32; RFIN = 7.0 GHz.
9 TA = 25°C; AVDD = DVDD = 3.3 V; R = 16,383; A = 63; B = 891; P = 32; RFIN = 7.0 GHz.
10 The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20logN (where N is the N divider value)
and 10 log(FPFD). PNSYNTH = PNTOT – 20 logN −10 logFPFD.
11 The PLL phase noise is composed of 1/f (flicker) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency, fRF,
and at a frequency offset, f, is given by PN = PN1_f + 10 log(10 kHz/f) + 20 log(fRF/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in
ADIsimPLL.
12 The phase noise is measured with the EV-ADF411xSD1Z evaluation board and the HP8562E spectrum analyzer. The spectrum analyzer provides the REFIN for the
synthesizer (fREFOUT = 10 MHz @ 0 dBm).
13 fREFIN = 10 MHz; fPFD = 200 kHz; offset frequency = 1 kHz; fRF = 900 MHz; N = 4500; loop BW = 20 kHz.
14 fREFIN = 10 MHz; fPFD = 200 kHz; offset frequency = 1 kHz; fRF = 6400 MHz; N = 32,000; loop BW = 20 kHz.
15 fREFIN = 10 MHz; fPFD = 1 MHz; offset frequency = 1 kHz; fRF = 6400 MHz; N = 6400; loop BW = 100 kHz.
TIMING CHARACTERISTICS
AVDD = DVDD = 3 V ± 10%, AVDD ≤ VP ≤ 5.5 V, AGND = DGND = CPGND = 0 V, RSET = 5.1 kΩ, dBm referred to 50 Ω, TA = TMAX to TMIN,
unless otherwise noted. 1
Table 2.
Parameter Limit2 (B Version) Unit Test Conditions/Comments
t1 10 ns min DATA to CLOCK setup time
t2 10 ns min DATA to CLOCK hold time
t3 25 ns min CLOCK high duration
t4 25 ns min CLOCK low duration
t5 10 ns min CLOCK to LE setup time
t6 20 ns min LE pulse width
1 Guaranteed by design but not production tested.
2 Operating temperature range (B Version) is −40°C to +85°C.
03338-002
CLOCK
DB22 DB2
DATA
LE
t
1
LE
DB23 (MSB)
t
2
DB1 (CONTROL
BIT C2) DB0 ( L SB)
(CONTROL BIT C1)
t
3
t
4
t
6
t
5
Figure 2. Timing Diagram
Data Sheet ADF4107
Rev. D | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
AVDD to GND1 −0.3 V to +3.6 V
AVDD to DVDD −0.3 V to +0.3 V
VP to GND −0.3 V to +5.8 V
VP to AVDD −0.3 V to +5.8 V
Digital I/O Voltage to GND −0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND −0.3 V to Vp + 0.3 V
REF
IN
, RF
IN
A, RF
IN
B to GND
−0.3 V to V
DD
+ 0.3 V
RFINA to RFINB ±600 mV
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +125°C
Maximum Junction Temperature 150°C
TSSOP θJA Thermal Impedance 112°C/W
LFCSP θJA Thermal Impedance
(Paddle Soldered)
30.4°C/W
Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 40 sec
Transistor Count
CMOS 6425
Bipolar 303
1 GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
ESD CAUTION
ADF4107 Data Sheet
Rev. D | Page 6 of 20
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
03338-003
R
SET
CP
CPGND
AGND
1
2
3
4
5
6
7
8
RF
IN
B
RF
IN
A
AV
DD
REF
IN
MUXOUT
LE
DATA
CLK
CE
DGND
16
15
14
13
12
11
10
9
V
P
DV
DD
TOP VIEW
(No t t o Scal e)
ADF4107
NOTES:
1. TRANSI S TO R COUNT 6425 ( CM OS) ,
303 (BI P OLAR) .
Figure 3. Pin Configuration, TSSOP
03338-004
14
13
12
1
3
4
LE
15 MUXOUT
DATA
CLK
11 CE
CPGND
AGND 2
AGND
RFINB5
RFINA
7
AVDD
6
AVDD
8
REFIN 9
DGND 10
DGND
19 RSET
20 CP
18 VP
17 DVDD
16 DVDD
ADF4107
TOP VI EW
(No t t o Scal e)
NOTES
1. TRANS IST OR CO UNT 6425 (CMOS) ,
303 (BI P OLAR) .
2. THE EXPOSED PAD MUST BE
CONNE CTED T O AG ND.
Figure 4. Pin Configuration, LFCSP
Table 4. Pin Function Descriptions
Pin No.
TSSOP LFCSP Mnemonic Description
1 19 RSET Connecting a resistor between this pin and CPGND sets the maximum charge pump output current. The
nominal voltage potential at the RSET pin is 0.66 V. The relationship between ICP and RSET is
SET
MAXCP
R
I5.25
=
so, with RSET = 5.1 kΩ, ICP MAX = 5 mA.
2 20 CP Charge Pump Output. When enabled, this pin provides ±ICP to the external loop filter, which in turn drives
the external VCO.
3
1
CPGND
Charge Pump Ground. This is the ground return path for the charge pump.
4 2, 3 AGND Analog Ground. This is the ground return path of the prescaler.
5 4 RFINB Complementary Input to the RF Prescaler. This point must be decoupled to the ground plane with a small
bypass capacitor, typically 100 pF. See Figure 18.
6 5 RFINA Input to the RF Prescaler. This small signal input is ac-coupled to the external VCO.
7 6, 7 AVDD Analog Power Supply. This voltage may range from 2.7 V to 3.3 V. Decoupling capacitors to the analog
ground plane should be placed as close as possible to this pin. AVDD must be the same value as DVDD.
8 8 REFIN Reference Input. This is a CMOS input with a nominal threshold of VDD/2 and a dc equivalent input
resistance of 100 kΩ. See Figure 17. This input can be driven from a TTL or CMOS crystal oscillator or it can
be ac-coupled.
9 9, 10 DGND Digital Ground.
10
11
CE
Chip Enable. A logic low on this pin powers down the device and puts the charge pump output into three-
state mode. Taking the pin high powers up the device, depending on the status of the power-down bit, F2.
11 12 CLK Serial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is latched
into the 24-bit shift register on the CLK rising edge. This input is a high impedance CMOS input.
12 13 DATA Serial Data Input. The serial data is loaded MSB first with the two LSBs being the control bits. This input is a
high impedance CMOS input.
13 14 LE Load Enable, CMOS Input. When LE goes high, the data stored in the shift registers is loaded into one of
the four latches, the latch being selected using the control bits.
14 15 MUXOUT This multiplexer output allows either the lock detect, the scaled RF, or the scaled reference frequency to
be accessed externally.
15 16, 17 DVDD Digital Power Supply. This may range from 2.7 V to 3.3 V. Decoupling capacitors to the digital ground
plane should be placed as close as possible to this pin. DVDD must be the same value as AVDD.
16 18 VP Charge Pump Power Supply. This voltage should be greater than or equal to VDD. In systems where VDD is 3 V, it
can be set to 5 V and used to drive a VCO with a tuning range of up to 5 V.
EP Exposed Pad. The exposed pad must be connected to AGND.
Data Sheet ADF4107
Rev. D | Page 7 of 20
TYPICAL PERFORMANCE CHARACTERISTICS
03338-005
Figure 5. Parameter Data for the RF Input
0
–30
–5
–10
–25
–20
–15
03338-006
6543210 RF INPUT FREQUENCY (GHz)
RF INPUT P OW E R ( dBm)
VDD = 3V
VP = 3V
TA = +85°C
TA = –40° C
TA = +25°C
Figure 6. Input Sensitivity
0
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
03338-007
–2kHz –1kHz 900MHz 1kHz 2kHz
FREQUENCY
OUTPUT POWER (dB)
VDD = 3V, VP = 5V
ICP = 5mA
PF D FREQ UE NC Y = 200kHz
LOOP BANDWI DTH = 20kHz
RES BANDWIDTH = 10Hz
VI DE O BANDWIDT H = 10Hz
SWEEP = 1.9 SE CONDS
AVERAGES = 10
–93.0dBc/Hz
REF LEVEL = –14.3dBm
Figure 7. Phase Noise (900 MHz, 200 kHz, 20 kHz)
–40
–140
–130
–120
–110
–100
–90
–80
–70
–60
–50
03338-008
100Hz 1MHz
FREQUENCY OF FSE T F ROM 900MHz CARRIER
PHASE NOI SE (d Bc/Hz)
10dB/DIV
R
L
= –40dBc/Hz
RMS NOIS E = 0.36°
Figure 8. Integrated Phase Noise (900 MHz, 200 kHz, 20 kHz)
0
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
03338-009
–400kHz –200kHz 900MHz 200kHz 400kHz
FREQUENCY
OUTPUT POWER (dB)
REF LEVEL = –14.0dBm VDD = 3V, VP = 5V
ICP = 5mA
PF D FREQ UE NCY = 200kHz
LOOP BANDWIDTH = 20kHz
RES BANDWIDTH = 1kHz
VI DE O BANDWIDT H = 1kHz
SWEEP = 2.5 SECONDS
AVERAGES = 30
–91.0dBc/Hz
Figure 9. Reference Spurs (900 MHz, 200 kHz, 20 kHz)
–83.5dBc/Hz
0
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
03338-010
–2kHz –1kHz 6400MHz 1kHz 2kHz
FREQUENCY
OUTPUT POWER (dB)
REF LEVEL = –10dBm VDD = 3V, VP = 5V
ICP = 5mA
PF D FREQ UE NC Y = 1M Hz
LOOP BANDWI DTH = 100kHz
RES BANDWIDTH = 10Hz
VI DE O BANDWIDT H = 10Hz
SWEEP = 1.9 SE CONDS
AVERAGES = 10
Figure 10. Phase Noise (6.4 GHz, 1 MHz, 100 kHz)
ADF4107 Data Sheet
Rev. D | Page 8 of 20
–40
–140
–130
–120
–110
–100
–90
–80
–70
–60
–50
03338-011
100Hz 1MHz
FREQUENCY OF FSE T F ROM 5800MHz CARRIER
PHASE NOI SE (d Bc/Hz)
10dB/DIV
R
L
= –40dBc/Hz
RMS NOIS E = 1.8°
Figure 11. Integrated Phase Noise (6.4 GHz, 1 MHz, 100 kHz)
0
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
03338-012
–2kHz –1kHz 5800MHz 1kHz 2kHz
FREQUENCY (MHz)
OUTPUT POWER (dB)
REF LEVEL = –10dBm
–65.0dBc
–66.0dBc
VDD = 3V, VP = 5V
ICP = 5mA
PF D FREQ UE NC Y = 1M Hz
LOOP BANDWI DTH = 100kHz
RES BANDWIDTH = 1kHz
VI DE O BANDWIDT H = 1kHz
SWEEP = 13 SECO NDS
AVERAGES = 1
Figure 12. Reference Spurs (6.4 GHz, 1 MHz, 100 kHz)
–60
–100
–90
–80
–70
03338-013
100–40 –20 020 40 60 80
TEMPERATURE (°C)
PHASE NOI SE (d Bc/Hz)
VDD = 3V
VP = 3V
Figure 13. Phase Noise (6.4 GHz, 1 MHz, 100 kHz) vs. Temperature
–5
–105
–95
–85
–75
–65
–55
–45
–35
–25
–15
03338-014
501234
TUNING V OLTAGE (V)
FIRST RE FERE NCE S P UR ( dBc)
VDD = 3V
VP = 5V
Figure 14. Reference Spurs vs. VTUNE (6.4 GHz, 1 MHz, 100 kHz)
–120
–180
–170
–160
–150
–140
–130
03338-015
100M
10k 100k 1M 10M
PHASE DETEC TOR FREQUENCY (Hz)
PHASE NOI SE (d Bc/Hz)
V
DD
= 3V
V
P
= 5V
Figure 15. Phase Noise (Referred to CP Output) vs. PFD Frequency
–6
6
5
4
3
2
1
0
–1
–2
–3
–4
–5
03338-016
5.000.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
CP
(V)
I
CP
(mA)
V
P
= 5V
I
CP
SETTLING = 5mA
Figure 16. Charge Pump Output Characteristics
Data Sheet ADF4107
Rev. D | Page 9 of 20
FUNCTIONAL DESCRIPTION
REFERENCE INPUT STAGE
The reference input stage is shown in Figure 17. SW1 and SW2
are normally closed switches. SW3 is normally open. When
power-down is initiated, SW3 is closed and SW1 and SW2 are
opened. This ensures that there is no loading of the REFIN pin
on power-down.
03338-017
100kΩ
NC
REF
IN
NC
NO
SW1
SW2
BUFFER
SW3
TO R COUNTE
R
POWER-DOWN
CONTROL
Figure 17. Reference Input Stage
RF INPUT STAGE
The RF input stage is shown in Figure 18. It is followed by a
2-stage limiting amplifier to generate the CML clock levels
needed for the prescaler.
03338-018
500Ω
1.6V
500Ω
AGND
RF
IN
A
RF
IN
B
AV
DD
BIAS
GENERATOR
Figure 18. RF Input Stage
PRESCALER (P/P + 1)
The dual-modulus prescaler (P/P + 1), along with the A and B
counters, enables the large division ratio, N, to be realized
(N = BP + A). The dual-modulus prescaler, operating at CML
levels, takes the clock from the RF input stage and divides it
down to a manageable frequency for the CMOS A and CMOS B
counters. The prescaler is programmable. It can be set in
software to 8/9, 16/17, 32/33, or 64/65. It is based on a
synchronous 4/5 core. A minimum divide ratio is possible for
fully contiguous output frequencies. This minimum is
determined by P, the prescaler value, and is given by: (P2 − P).
A AND B COUNTERS
The A and B CMOS counters combine with the dual-modulus
prescaler to allow a wide ranging division ratio in the PLL
feedback counter. The counters are specified to work when the
prescaler output is 300 MHz or less. Thus, with an RF input
frequency of 4.0 GHz, a prescaler value of 16/17 is valid but a
value of 8/9 is not valid.
Pulse Swallow Function
The A and B counters, in conjunction with the dual-modulus
prescaler, make it possible to generate output frequencies that
are spaced only by the reference frequency divided by R. The
equation for the VCO frequency is as follows:
R
f
ABPf REFIN
VCO
where:
fVCO is the output frequency of external voltage controlled
oscillator (VCO).
P is the preset modulus of dual-modulus prescaler (8/9, 16/17).
B is the preset divide ratio of binary 13-bit counter (3 to 8191).
A is the preset divide ratio of binary 6-bit swallow counter (0 to 63).
fREFIN is the external reference frequency oscillator.
LOAD
LOAD
FROM RF
INPUT STAGE
PRESCALER
P/P + 1
13-BIT B
COUNTER
TO PFD
6-BIT A
COUNTER
N DIVIDER
MODULUS
CONTROL
N = BP + A
03338-019
Figure 19. A and B Counters
R COUNTER
The 14-bit R counter allows the input reference frequency to be
divided down to produce the reference clock to the phase
frequency detector (PFD). Division ratios from 1 to 16,383 are
allowed.
PHASE FREQUENCY DETECTOR AND CHARGE PUMP
The phase frequency detector (PFD) takes inputs from the R
counter and N counter (N = BP + A) and produces an output
proportional to the phase and frequency difference between
them. Figure 20 is a simplified schematic. The PFD includes a
programmable delay element that controls the width of the
antibacklash pulse. This pulse ensures that there is no dead zone
in the PFD transfer function and minimizes phase noise and
reference spurs. Two bits in the reference counter latch, ABP2
and ABP1, control the width of the pulse. Use of the minimum
antibacklash pulse width is not recommended. See Figure 23.
ADF4107 Data Sheet
Rev. D | Page 10 of 20
HI
HI
D1
D2
Q1
Q2
CLR2
CP
U1
U2
UP
DOWN
ABP2 ABP1
CPGND
U3
R DIV IDER
PROGRAMMABLE
DELAY
N DIV IDER
VPCHARGE
PUMP
03338-020
CLR1
Figure 20. PFD Simplified Schematic and Timing (in Lock)
MUXOUT AND LOCK DETECT
The output multiplexer on the ADF4107 allows the user to
access various internal points on the chip. The state of
MUXOUT is controlled by M3, M2, and M1 in the function
latch. Figure 25 shows the full truth table. Figure 21 shows the
MUXOUT section in block diagram form.
Lock Detect
MUXOUT can be programmed for two types of lock detect:
digital lock detect and analog lock detect.
Digital lock detect is active high. When the lock detect
precision (LDP) bit in the R counter latch is set to 0, digital lock
detect is set high when the phase error on three consecutive
phase detector (PD) cycles is less than 15 ns. With LDP set to 1,
five consecutive cycles of less than 15 ns are required to set the
lock detect. It stays set high until a phase error of greater than
25 ns is detected on any subsequent PD cycle.
The N-channel open-drain analog lock detect should be
operated with an external pull-up resistor of 10 kΩ nominal.
When lock has been detected, this output becomes high with
narrow, low going pulses.
03338-021
DGND
DV
DD
CONTROL
MUX
ANALO G L OCK DET E CT
DIGITAL LOCK DETECT
R COUNT E R OUT P UT
N COUNT E R OUT P UT
SDOUT
MUXOUT
Figure 21. MUXOUT Circuit
INPUT SHIFT REGISTER
The ADF4107 digital section includes a 24-bit input shift
register, a 14-bit R counter, and a 19-bit N counter, comprising a
6-bit A counter and a 13-bit B counter. Data is clocked into the
24-bit shift register on each rising edge of CLK. The data is
clocked in MSB first. Data is transferred from the shift register
to one of four latches on the rising edge of LE. The destination
latch is determined by the state of the two control bits (C2, C1)
in the shift register. These are the two LSBs, DB1 and DB0, as
shown in the timing diagram of Figure 2. The truth table for
these bits is shown in Table 5. Figure 22 shows a summary of
how the latches are programmed.
Table 5. C2, C1 Truth Table
Control Bits
Data Latch
C2 C1
0 0 R Counter
0 1 N Counter (A and B)
1 0 Function Latch (Including Prescaler)
1 1 Initialization Latch
Data Sheet ADF4107
Rev. D | Page 11 of 20
LATCH SUMMARY
DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0
C2 ( 0) C1 ( 0)R1R2R3R4R5
R6
R7
R8
R9R10
R11
R12R13
R14
ABP1ABP2T1T2LDP
DB21
DB22DB23
0 0X
DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0
C2 ( 0) C1 (1)
A1A2A3
A4A5B1B2B3B4
B5B6B7
B8B9B10B11B12
B13 A6
DB21
DB22DB23
G1
XX
DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1
DB0
C2 ( 1) C1 (0)F1PD1M1M2M3F3P1P2 CPI1
CPI2CPI5CPI6 TC4PD2 F2CPI3CPI4
DB21
TC3 TC2 TC1
DB22DB23
F4F5
DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9
DB8
DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0
C2 ( 1) C1 (1)
F1PD1M1M2M3
F3
P1P2 CPI1CPI2
CPI5
CPI6 TC4
PD2 F2
CPI3CPI4
DB21
TC3 TC2 TC1
DB22DB23
F4F5
REF E RE NCE COUNTE R LATCH
RESERVED
LOCK
DETECT
PRECISION
TEST
MODE BITS
ANTI-
BACKLASH
WIDTH 14-BIT RE FERENCE COUNT E R CONTROL
BITS
RESERVED 13-BIT B COUNT E R 6-BIT A COUNTE R CONTROL
BITS
N COUNTER L ATCH
CP GAIN
FUNCTION LATCH
PRESCALER
VALUE
POWER-
DOWN 2
CURRENT
SETTING
2
CURRENT
SETTING
1
TIMER COUNT E R
CONTROL
FASTLOCK
MODE
FASTLOCK
ENABLE
CP THREE-
STATE
PD
POLARITY
MUXOUT
CONTROL
POWER-
DOWN 1
COUNTER
RESET
CONTROL
BITS
PRESCALER
VALUE
POWER-
DOWN 2
CURRENT
SETTING
2
CURRENT
SETTING
1TIMER COUNT E R
CONTROL
FASTLOCK
MODE
FASTLOCK
ENABLE
CP THREE-
STATE
PD
POLARITY
MUXOUT
CONTROL
POWER-
DOWN 1
COUNTER
RESET
CONTROL
BITS
INITIALIZATION LATCH
03338-022
Figure 22. Latch Summary
ADF4107 Data Sheet
Rev. D | Page 12 of 20
REFERENCE COUNTER LATCH MAP
LDP
0
1
ABP2 ABP1
0 0 2.9ns
011.3ns TEST MODE ONLY. DO NOT USE
106.0ns
112.9ns
R14 R13 R12 .......... R3 R2 R1
000.......... 0 0 1 1
000.......... 0102
000.......... 0 1 1 3
0 0 0 .......... 10 0 4
............. .. . .
. . ........... .. . .
............. .
...
111.......... 10016380
111.......... 10116381
111.......... 11016382
11 1 .......... 11116383
X
= DON’T CARE
DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0
C2 (0) C1 (0)
R1R2
R3R4R5R6R7R8
R9
R10
R11
R12
R13
R14
ABP1
ABP2
T1
T2
LDP
DB21
DB22
DB23
00
X
RESERVED
LOCK
DETECT
PRECISION
TEST
MODE BITS
ANTI-
BACKLASH
WIDTH 14-BIT RE FERENCE COUNT E R CONTROL
BITS
DIV IDE RATIO
ANTIBACKLAS H P ULSE WIDTH
TEST MODE BITS
SHO ULD BE SE T
TO 00 FOR NO RM AL
OPERATION.
OPERATION
THREE CONSECUTIVE CYCLES OF PHASE DELAY LESS THAN
15ns M US T OCCUR BE FO RE LOCK DE TECT I S S ET.
FIVE CONSECUTIVE CYCLES OF PHASE DELAY LESS THAN
15ns M US T OCCUR BE FO RE LOCK DE TECT I S S ET.
BOTH OF THESE BITS
MUST BE SET TO 0 FOR
NORMAL OPERATION.
03338-023
Figure 23. Reference Counter Latch Map
Data Sheet ADF4107
Rev. D | Page 13 of 20
AB COUNTER LATCH MAP
DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0
C2 (0) C1 (1)
A1A2A3A4A5B1B2B3
B4B5
B6
B7B8
B9
B10B11B12B13 A6
DB21
DB22DB23
G1
0 0
01
10
F4 (FUNCT ION LATCH)
FAST LOCK E NABLE
11
A6 A5 .......... A2 A1
0 0 .......... 00 0
00.......... 0 1 1
0 0 .......... 1 0 2
0 0 .......... 1 1 3
. . .......... . . .
............ . . .
. . .......... . . .
1 1 .......... 0 0 60
11.......... 0 1 61
1 1 .......... 1062
11.......... 1 1 63
X X
B13 B12 B11B3 B2 B1
0 0 0.......... 00 0
0 0 0 .......... 00 1
00 0 .......... 0 1 0
0 0 0 .......... 0 1 13
. . . .......... . . ..
. . . .......... . . . .
.. ........... . . . .
11 1.......... 10 0 8188
11 1 .......... 1 0 1 8189
1 1 1 .......... 1 1 08190
1 1 1 .......... 1 1 18191
X = DO N’T CARE
RESERVED 13-BIT B COUNT E R 6-BIT A COUNTE R CONTROL
BITS
CP GAIN
A COUNTER
DIVIDE RATIO
B COUNT E R DIVIDE RATIO
NOT ALLOWED
NOT ALLOWED
NOT ALLOWED
THESE BITS ARE NOT US E D
BY THE DEV ICE AND ARE
DON' T CARE BITS .
OPERATIONCP GAIN
CHARGE P UMP CURRENT
SETTING 1 IS PERMANENTLY USED.
CHARGE P UMP CURRENT
SETTING 2 IS PERMANENTLY USED.
CHARGE P UMP CURRENT
SETTING 1 IS USED.
CHARGE P UMP CURRENT I S
SWITCHED TO SETTING 2. THE
TIME SPENT IN SETTING 2 IS
DEPENDE NT O N WHICH FASTLOCK
MODE IS USED. SEE FUNCTION
LATCH DESCRIPTION. N = BP + A, P IS PRESCALER VALUE SET IN THE FUNCTION
LATCH. B M US T BE GREATER T HAN OR EQUAL TO A. FOR
CONTINUOUSLY ADJACENT VALUE S OF ( N × F
REF
), AT THE
OUTPUT, N
MIN
IS (P
2
– P).
03338-024
Figure 24. AB Counter Latch Map
ADF4107 Data Sheet
Rev. D | Page 14 of 20
FUNCTION LATCH MAP
P2 P1
0 0 8/9
0 1 16/17
1 0 32/33
1 1 64/65
PD2 PD1 MODE
0XX
1X 0
1 0 1
1 1 1
CPI6 CPI5 CPI4
CPI3 CPI2 CPI1 3kΩ 5.1kΩ 11kΩ
0001.06 0.625 0.289
0012.12 1.25 0.580
0 1 0 3.18 1.875 0.870
0114.24 2.5 1.160
1005.30 3.125 1.450
1016.36 3.75 1.730
1107.42 4.375 2.020
1 1 1 8.50 5.0 2.320
TC4 TC3 TC2 TC1
00003
00017
0 0 1 0 11
001115
010019
010123
0 1 1 0 27
011131
100035
100139
101043
101147
1 1 0051
110155
111059
111163
F4
0
1
1
M3 M2 M1
0 0 0
0 0 1
0 1 0
0 1 1
10 0
1 0 1
1 1 0
1 1 1
F3
0
1
F2
0
1
F1
0
1
DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0
C2 ( 1) C1 ( 0)
F1
PD1
M1
M2
M3F3
P1P2 CPI1CPI2CPI5
CPI6 TC4PD2 F2CPI3CPI4
DB21
TC3 TC2 TC1
DB22DB23
F4
F5
F5
X
0
1
NEGATIVE
POSITIVE
PRESCALER
VALUE
POWER-
DOWN 2
CURRENT
SETTING
2
CURRENT
SETTING
1
TIMER COUNT E R
CONTROL
FASTLOCK
MODE
FASTLOCK
ENABLE
CP THREE-
STATE
MUXOUT
CONTROL
POWER-
DOWN 1
COUNTER
RESET
CONTROL
BITS
PHASE DETEC TOR
POLARITYCOUNTER
OPERATION
NORMAL
R, A, B COUNTE RS
HEL D IN RESE T
CHARGE P UMP
OUTPUT
NORMAL
THREE-STATE
FAST LOCK DISABLED
FAST LOCK M ODE 1
FAST LOCK M ODE 2
FAST LOCK M ODE
THREE-STATE OUTPUT
DIGITAL LOCK DE TECT
(ACT IVE HIG H)
N DIV IDER O UTPUT
DVDD
R DIV IDER O UTPUT
N-CHANNEL OP E N- DRAIN
LOCK DET E CT
SERIAL DATA OUTPUT
DGND
OUTPUT
TIMEOUT
(PFD CYCLES)
ICP ( mA)
ASYNCHRONOUS P OW E R- DOWN
NORMAL OPERATION
ASYNCHRONOUS P OW E R- DOWN
SYNCHRONOUS P OW E R- DOWN
CE PIN
PRESCALER VALUE
PD
POLARITY
03338-025
Figure 25. Function Latch Map
Data Sheet ADF4107
Rev. D | Page 15 of 20
INITIALIZATION LATCH MAP
P2 P1
0 0 8/9
0 1 16/17
1 0 32/33
1 1 64/65
PD2 PD1 MODE
0XX
1X 0
1 0 1
1 1 1
CPI6 CPI5 CPI4
CPI3 CPI2 CPI1 3kΩ 5.1kΩ 11kΩ
0001.06 0.625 0.289
0 0 1 2.12 1.25 0.580
0 1 0 3.18 1.875 0.870
0114.24 2.5 1.160
1005.30 3.125 1.450
1016.36 3.75 1.730
1 1 07.42 4.375 2.020
1118.50 5.0 2.320
TC4 TC3 TC2 TC1
0 0 0 0 3
0001 7
001011
001115
010019
010123
011027
011131
100035
100139
1 0 1043
101147
110051
110155
111059
111163
F4
0
1
1
M3 M2 M1
0 0 0
0 0 1
0 1 0
01 1
1 0 0
1 0 1
11 0
1 1 1
F3
0
1
F2
0
1
F1
0
1
DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0
C2 ( 1) C1 ( 1)
F1
PD1
M1
M2M3
F3P1
P2 CPI1CPI2CPI5
CPI6 TC4PD2 F2CPI3CPI4
DB21
TC3 TC2 TC1
DB22DB23
F4
F5
THREE-STATE
F5
X
0
1
NEGATIVE
POSITIVE
PRESCALER
VALUE
POWER-
DOWN 2
CURRENT
SETTING
2
CURRENT
SETTING
1
TIMER COUNT E R
CONTROL
FASTLOCK
MODE
FASTLOCK
ENABLE
CP THREE-
STATE
MUXOUT
CONTROL
POWER-
DOWN 1
COUNTER
RESET
CONTROL
BITS
PHASE DETEC TOR
POLARITYCOUNTER
OPERATION
NORMAL
R, A, B COUNTE RS
HEL D IN RESE T
CHARGE P UMP
OUTPUT
NORMAL
FAST LOCK DISABLED
FAST LOCK M ODE 1
FAST LOCK M ODE 2
FAST LOCK M ODE
THREE-STATE OUTPUT
DIGITAL LOCK DE TECT
(ACT IVE HIG H)
N DIV IDER O UTPUT
DVDD
R DIV IDER O UTPUT
N-CHANNEL OP E N- DRAIN
LOCK DET E CT
SERIAL DATA OUTPUT
DGND
OUTPUT
TIMEOUT
(PFD CYCLES)
ICP ( mA)
ASYNCHRONOUS P OW E R- DOWN
NORMAL OPERATION
ASYNCHRONOUS P OW E R- DOWN
SYNCHRONOUS P OW E R- DOWN
CE PIN
PRESCALER VALUE
PD
POLARITY
03338-026
Figure 26. Initialization Latch Map
ADF4107 Data Sheet
Rev. D | Page 16 of 20
FUNCTION LATCH
The on-chip function latch is programmed with C2 and C1 set
to 1 and 0, respectively. Figure 25 shows the input data format
for programming the function latch.
Counter Reset
DB2 (F1) is the counter reset bit. When this bit is 1, the R
counter and the AB counters are reset. For normal operation,
this bit should be 0. Upon powering up, the F1 bit needs to be
disabled (set to 0). Then, the N counter resumes counting in
close alignment with the R counter. (The maximum error is one
prescaler cycle).
Power-Down
DB3 (PD1) and DB21 (PD2) provide programmable power-
down modes. They are enabled by the CE pin.
When the CE pin is low, the device is immediately disabled
regardless of the states of PD2 and PD1.
In the programmed asynchronous power-down, the device
powers down immediately after latching a 1 into the PD1 bit,
with the condition that PD2 has been loaded with a 0.
In the programmed synchronous power-down, the device
power-down is gated by the charge pump to prevent unwanted
frequency jumps. Once the power-down is enabled by writing
a 1 into PD1 (on condition that a 1 has also been loaded to
PD2), then the device goes into power-down on the occurrence
of the next charge pump event.
When a power-down is activated (either in synchronous or
asynchronous mode, including CE pin-activated power-down),
the following events occur:
• All active dc current paths are removed.
• The R, N, and timeout counters are forced to their load state
conditions.
• The charge pump is forced into three-state mode.
• The digital lock detect circuitry is reset.
• The RFIN input is debiased.
• The reference input buffer circuitry is disabled.
• The input register remains active and capable of loading and
latching data.
MUXOUT Control
The on-chip multiplexer is controlled by M3, M2, and M1 on
the ADF4107. Figure 25 shows the truth table.
Fastlock Enable Bit
DB9 of the function latch is the fastlock enable bit. Fastlock is
enabled only when this bit is 1.
Fastlock Mode Bit
DB10 of the function latch is the fastlock mode bit. When
fastlock is enabled, this bit determines which fastlock mode is
used. If the fastlock mode bit is 0, then Fastlock Mode 1 is
selected; and if the fastlock mode bit is 1, then Fastlock Mode 2
is selected.
Fastlock Mode 1
The charge pump current is switched to the contents of Current
Setting 2. The device enters fastlock by having a 1 written to the
CP gain bit in the AB counter latch. The device exits fastlock by
having a 0 written to the CP gain bit in the AB counter latch.
Fastlock Mode 2
The charge pump current is switched to the contents of Current
Setting 2. The device enters fastlock by having a 1 written to the
CP gain bit in the AB counter latch. The device exits fastlock
under the control of the timer counter. After the timeout period
determined by the value in TC4 to TC1, the CP gain bit in the
AB counter latch is automatically reset to 0 and the device
reverts to normal mode instead of fastlock. See Figure 25 for the
timeout periods.
Timer Counter Control
The user has the option of programming two charge pump
currents. The intent is that Current Setting 1 is used when the RF
output is stable and the system is in a static state. Current Setting 2
is meant to be used when the system is dynamic and in a state of
change (that is, when a new output frequency is programmed).
The normal sequence of events is as follows:
The user initially decides what the preferred charge pump
currents are going to be. For example, the choice may be 2.5 mA
as Current Setting 1 and 5 mA as Current Setting 2.
At the same time, it must be decided how long the secondary
current is to stay active before reverting to the primary current.
This is controlled by the timer counter control bits, DB14 to
DB11 (TC4 to TC1), in the function latch. The truth table is
given in Figure 25.
To program a new output frequency, the user simply programs
the AB counter latch with new values for A and B. At the same
time, the CP gain bit can be set to 1, which sets the charge
pump with the value in CPI6 to CPI4 for a period of time
determined by TC4 to TC1. When this time is up, the charge
pump current reverts to the value set by CPI3 to CPI1. At the
same time, the CP gain bit in the AB counter latch is reset to 0
and is ready for the next time that the user wishes to change the
frequency.
Note that there is an enable feature on the timer counter. It is
enabled when Fastlock Mode 2 is chosen by setting the fastlock
mode bit (DB10) in the function latch to 1.
Data Sheet ADF4107
Rev. D | Page 17 of 20
Charge Pump Currents
CPI3, CPI2, and CPI1 program Current Setting 1 for the charge
pump. CPI6, CPI5, and CPI4 program Current Setting 2 for the
charge pump. The truth table is given in Figure 25.
Prescaler Value
P2 and P1 in the function latch set the prescaler values. The
prescaler value should be chosen so that the prescaler output
frequency is always less than or equal to 300 MHz. Thus, with
an RF frequency of 4 GHz, a prescaler value of 16/17 is valid but
a value of 8/9 is not valid.
PD Polarity
This bit sets the phase detector polarity bit. See Figure 25.
CP Three-State
This bit controls the CP output pin. With the bit set high, the
CP output is put into three-state. With the bit set low, the CP
output is enabled.
INITIALIZATION LATCH
The initialization latch is programmed when C2 and C1 are set
to 1 and 1. This is essentially the same as the function latch
(programmed when C2, C1 = 1, 0).
However, when the initialization latch is programmed an
additional internal reset pulse is applied to the R and AB
counters. This pulse ensures that the AB counter is at load point
when the AB counter data is latched and the device will begin
counting in close phase alignment.
If the latch is programmed for synchronous power-down (CE
pin is high; PD1 bit is high; PD2 bit is low), the internal pulse
also triggers this power-down. The prescaler reference and the
oscillator input buffer are unaffected by the internal reset pulse and
so close phase alignment is maintained when counting resumes.
When the first AB counter data is latched after initialization, the
internal reset pulse is again activated. However, successive AB
counter loads after this will not trigger the internal reset pulse.
DEVICE PROGRAMMING AFTER INITIAL POWER-UP
After initially powering up the device, there are three ways to
program the device.
Initialization Latch Method
1. Apply VDD.
2. Program the initialization latch (11 in two LSBs of input
word). Make sure that the F1 bit is programmed to 0.
3. Next, do a function latch load (10 in two LSBs of the
control word), making sure that the F1 bit is programmed
to a 0.
4. Then do an R load (00 in two LSBs).
5. Then do an AB load (01 in two LSBs).
6. When the initialization latch is loaded, the following
occurs:
a. The function latch contents are loaded.
b. An internal pulse resets the R, AB, and timeout counters to
load-state conditions and also three-states the charge
pump. Note that the prescaler band gap reference and the
oscillator input buffer are unaffected by the internal reset
pulse, allowing close phase alignment when counting
resumes.
c. Latching the first AB counter data after the initialization
word activates the same internal reset pulse. Successive AB
loads do not trigger the internal reset pulse unless there is
another initialization.
CE Pin Method
1. Apply VDD.
2. Bring CE low to put the device into power-down. This is
an asychronous power-down in that it happens immediately.
3. Program the function latch (10).
4. Program the R counter latch (00).
5. Program the AB counter latch (01).
6. Bring CE high to take the device out of power-down. The
R and AB counters resume counting in close alignment.
Note that after CE goes high, a duration of 1 µs may be required
for the prescaler band gap voltage and oscillator input buffer
bias to reach steady state.
CE can be used to power the device up and down in order to
check for channel activity. The input register does not need to
be reprogrammed each time the device is disabled and enabled
as long as it has been programmed at least once after VDD was
initially applied.
Counter Reset Method
1. Apply VDD.
2. Do a function latch load (10 in two LSBs). As part of this,
load 1 to the F1 bit. This enables the counter reset.
3. Do an R counter load (00 in two LSBs).
4. Do an AB counter load (01 in two LSBs).
5. Do a function latch load (10 in two LSBs). As part of this,
load 0 to the F1 bit. This disables the counter reset.
This sequence provides the same close alignment as the
initialization method. It offers direct control over the internal
reset. Note that counter reset holds the counters at load point
and three-states the charge pump, but does not trigger
synchronous power-down.
ADF4107 Data Sheet
Rev. D | Page 18 of 20
APPLICATIONS
LOCAL OSCILLATOR FOR LMDS BASE STATION
TRANSMITTER
Figure 27 shows the ADF4107 being used with a VCO to
produce the LO for an LMDS base station.
The reference input signal is applied to the circuit at FREFIN
and, in this case, is terminated in 50 Ω. A typical base station
system has either a TCXO or an OCXO driving the reference
input without any 50 Ω termination.
To have a channel spacing of 1 MHz at the output, the 10 MHz
reference input must be divided by 10, using the on-chip
reference divider of the ADF4107.
The charge pump output of the ADF4107 (Pin 2) drives the
loop filter. In calculating the loop filter component values, a
number of items need to be considered. In this example, the
loop filter was designed so that the overall phase margin for the
system would be 45°.
Other PLL system specifications are:
KD = 5.0 mA
KV = 80 MHz/V
Loop bandwidth = 70 kHz
FPFD = 1 MHz
N = 6300
Extra reference spur attenuation = 10 dB
All of these specifications are needed and used to derive the
loop filter component values shown in Figure 27.
Figure 27 gives a typical phase noise performance of −83 dBc/Hz
at 1 kHz offset from the carrier. Spurs are better than −70 dBc.
The loop filter output drives the VCO, which, in turn, is fed
back to the RF input of the PLL synthesizer, and drives the RF
output terminal. A T-circuit configuration provides 50 Ω
matching between the VCO output, the RF output, and the RFIN
terminal of the synthesizer.
In a PLL system, it is important to know when the system is in
lock. In Figure 27, this is accomplished by using the MUXOUT
signal from the synthesizer. The MUXOUT pin can be
programmed to monitor various internal signals in the
synthesizer. One of these is the LD or lock detect signal.
ADF4107
CE
CLK
DATA
LE
1000pF 1000pF REF
IN
100pF
CP
MUXOUT
CPGND
AGND
DGND
100pF
820pF
47pF
100pF
51Ω
1.7kΩ
7.5kΩ
100pF
18Ω
NOTES:
1. DE COUPL ING CAPACITORS (0.1µF/10pF) ONAV
DD
, DV
DD
,AND
V
P
OF THEADF4106 AND ON V
CC
OF THE V 956M E 03 HAVE
BEEN OMI TT E D FROM THE DIAG RAM TO AID CLARI TY.
SPI®-COMPATIBLE SERIAL BUS
R
SET
RF
IN
A
RF
IN
B
AV
DD
DV
DD
V
P
FREF
IN
V
DD
V
P
LOCK
DETECT
V
CC
V956ME01
1, 3, 4, 5, 7, 8,
9, 11, 12, 13
18Ω
18Ω
100pF
RF
OUT
5.1kΩ
715 16
8
2
14
6
5
1
9
4
3
14
210
51Ω
03338-027
Figure 27. 6.3 GHz Local Oscillator Using the ADF4107
Data Sheet ADF4107
Rev. D | Page 19 of 20
INTERFACING
The ADF4107 has a simple SPI®-compatible serial interface for
writing to the device. CLK, DATA, and LE control the data
transfer. When LE (latch enable) goes high, the 24 bits that have
been clocked into the input register on each rising edge of CLK
are transferred to the appropriate latch. See Figure 2 for the
timing diagram and Table 5 for the latch truth table.
The maximum allowable serial clock rate is 20 MHz. This
means that the maximum update rate possible for the device is
833 kHz or one update every 1.2 µs. This is certainly more than
adequate for systems that have typical lock times in hundreds of
microseconds.
ADuC812 Interface
Figure 28 shows the interface between the ADF4107 and the
ADuC812 MicroConverter®. Since the ADuC812 is based on an
8051 core, this interface can be used with any 8051-based
microcontroller. The MicroConverter is set up for SPI master
mode with CPHA = 0. To initiate the operation, the I/O port
driving LE is brought low. Each latch of the ADF4107 needs a
24-bit word. This is accomplished by writing three 8-bit bytes
from the MicroConverter to the device. When the third byte
has been written, the LE input should be brought high to
complete the transfer.
On first applying power to the ADF4107, it needs four writes
(one each to the initialization latch, function latch, R counter
latch, and N counter latch) for the output to become active.
I/O port lines on the ADuC812 are also used to control power-
down (CE input) and to detect lock (MUXOUT configured as
lock detect and polled by the port input).
When operating in the mode described, the maximum
SCLOCK rate of the ADuC812 is 4 MHz. This means that the
maximum rate at which the output frequency can be changed is
166 kHz.
CLK
DATA
LE
CE
MUXOUT
(LOCK DETECT)
MOSI
ADF4107
SCLOCK
I/O PORTS
ADuC812
03338-028
Figure 28. ADuC812 to ADF4107 Interface
ADSP-2181 Interface
Figure 29 shows the interface between the ADF4107 and the
ADSP21xx digital signal processor. The ADF4107 needs a
24-bit serial word for each latch write. The easiest way to
accomplish this using the ADSP-21xx family is to use the
autobuffered transmit mode of operation with alternate
framing. This provides a means for transmitting an entire block
of serial data before an interrupt is generated. Set up the word
length for 8 bits and use three memory locations for each 24-bit
word. To program each 24-bit latch, store the three 8-bit bytes,
enable the autobuffered mode, and then write to the transmit
register of the DSP. This last operation initiates the autobuffer
transfer.
CLK
DATA
LE
CE
MUXOUT
(LOCK DETECT)
DT
ADF4107
SCLOCK
I/O FLAGS
ADSP-21xx TFS
03338-029
Figure 29. ADSP-21xx to ADF4107 Interface
PCB DESIGN GUIDELINES FOR CHIP SCALE
PACKAGE
The lands on the chip scale package (CP-20-6) are rectangular.
The printed circuit board pad for these should be 0.1 mm
longer than the package land length and 0.05 mm wider than
the package land width. The land should be centered on the
pad. This ensures that the solder joint size is maximized. The
bottom of the chip scale package has a central thermal pad.
The thermal pad on the printed circuit board should be at least
as large as this exposed pad. On the printed circuit board, there
should be a clearance of at least 0.25 mm between the thermal
pad and the inner edges of the pad pattern. This ensures that
shorting is avoided.
Thermal vias may be used on the printed circuit board thermal
pad to improve thermal performance of the package. If vias are
used, they should be incorporated in the thermal pad at 1.2 mm
pitch grid. The via diameter should be between 0.3 mm and
0.33 mm and the via barrel should be plated with 1 oz. copper
to plug the via.
The user should connect the printed circuit board thermal pad
to AGND.
ADF4107 Data Sheet
Rev. D | Page 20 of 20
OUTLINE DIMENSIONS
16 9
81
PI N 1
SEATING
PLANE
8°
0°
4.50
4.40
4.30
6.40
BSC
5.10
5.00
4.90
0.65
BSC
0.15
0.05
1.20
MAX 0.20
0.09 0.75
0.60
0.45
0.30
0.19
COPLANARITY
0.10
COM P LIANT T O JEDEC S TANDARDS M O-153- AB
Figure 30. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-16)
Dimensions shown in millimeters
0.50
BSC
0.65
0.60
0.55
0.30
0.25
0.18
COMPLIANT
TO
JEDEC STANDARDS MO-220-WGGD-1.
BOTTOM VIEWTOP VIEW
EXPOSED
PAD
PIN 1
INDICATOR
4.10
4.00 SQ
3.90
SEATING
PLANE
0.80
0.75
0.700.05 MAX
0.02NOM
0.20 REF
0.20 MIN
COPLANARITY
0.08
PIN 1
INDICATOR
2.30
2.10 SQ
2.00
FOR PROPERCONNECTIONOF
THE EXPOSED PAD, REFER TO
THE PINCONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OFTHIS DATA SHEET.
1
20
6
10
11
1516
5
08-16-2010-B
Figure 31. 20-Lead Lead Frame Chip Scale Package [LFCSP_WQ]
4 mm × 4 mm Body, Very Very Thin Quad
(CP-20-6)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option
ADF4107BRU –40°C to + 85°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADF4107BRU-REEL –40°C to + 85°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADF4107BRU-REEL7 –40°C to + 85°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADF4107BRUZ –40°C to + 85°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADF4107BRUZ-REEL –40°C to + 85°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADF4107BRUZ-REEL7 –40°C to + 85°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADF4107BCPZ –40°C to + 85°C 20-Lead Lead Frame Chip Scale Package [LFCSP_WQ] CP-20-6
ADF4107BCPZ-REEL –40°C to + 85°C 20-Lead Lead Frame Chip Scale Package [LFCSP_WQ] CP-20-6
ADF4107BCPZ-REEL7 –40°C to + 85°C 20-Lead Lead Frame Chip Scale Package [LFCSP_WQ] CP-20-6
EV-ADF411XSD1Z Evaluation Board
1 Z = RoHS Compliant Part.
©2003–2013 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D03338-0-3/13(D)
