Applications
• High frequency rectifi cation (switching regulators, converters, choppers)
Features
• Small switching noise
• Low leakage current and high reliability due to highly reliable planar structure
• Ultrasmall package permitting applied sets to be small and slim
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V
Average Output Current IO3.0 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 20 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Package Dimensions
unit : mm (typ)
7012-001
Ordering number : EN8967A
2.9
0.65
2.8
0.250.25 2.3
0.75
0.07
0.3
1234
8765
0.15
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
VEC8
SBE813-TL-E
Product & Package Information
• Package : VEC8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
TL
SE
LOT No.
5
4
6
3
7
2
8
1
90512 TKIM/32406SB MSIM TB-00002132 No.8967-1/6
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
SBE813
Schottky Barrier Diode
30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Reverse Voltage VRIR=0.5mA 30 V
Forward Voltage VF1I
F=2.0A 0.435 0.485 V
VF2I
F=3.0A 0.47 0.52 V
Reverse Current IRVR=15V 42 μA
Interterminal Capacitance C VR=10V, f=1MHz 90 pF
Reverse Recovery Time trr IF=IR=100mA, See specifi ed Test Circuit. 20 ns
Thermal Resistance Rth(j-a)
When mounted on ceramic substrate (1200mm2×0.8mm)
50 °C / W
Ordering Information
Device Package Shipping memo
SBE813-TL-E VEC8 3,000pcs./reel Pb Free
Forward Voltage, VF -- V
Forward Current, IF -- A
IF -- VF
Reverse Voltage, VR -- V
IR -- VR
Reverse Current, IR -- μA
Average Output Current, IO -- A
PF(AV) -- IO
Average Forward Power Dissipation, PF(AV) -- W
0 0.2 0.30.1 0.4 0.5 0.70.6
2
5
7
3
2
0.1
2
5
7
3
1.0
5
7
3
10
0.01
IT09868 IT09869
0
0.001
0.01
0.1
1.0
10
10000
100
1000
5101520253035
Ta=125°C
100
°
C
75
°
C
50
°
C
25
°
C
0
°
C
--25
°
C
Ta=125°C
100
°
C
75°C
50°C
25
°
C
0
°
C
--25°C
(2) (3)
(1)
0
00.5
2.0
1.6
1.8
1.4
0.2
0.4
0.6
0.8
1.0
1.2
3.52.0 2.5 3.01.51.0
IT09870
(4)
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
θ
360°
Rectangular
wave
180°
360°
Sine wave
0
0.00E+00
1.00E--04
2.00E--04
3.00E--04
105
4.00E--04
5.00E--05
1.50E--04
2.50E--04
3.50E--04
2015 3025 35
IT10631
(1)
(2)
(3)
(4)
PR(AV) -- VR
Peak Reverse Voltage, VR -- V
Average Reverse Power Dissipation, PR(AV) -- W
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Rectangular
wave
Sine wave
θ
360°
VR
180°360°
VR
SBE813
No.8967-2/6
70.01 23 7
0.1
052 2337
1.0
5
24
16
8
20
12
4
ID00523
IFSM -- t
IS
20ms
t
Current waveform 50Hz sine wave
Time, t -- s
Surge Forward Current, IFSM(Peak) -- A
00.5 1.51.0 2.0 3.52.5 3.0
0
20
40
120
100
80
60
140
IT10632
(3)
(1) (2)
(4)
*When mounted in reliability
operaion board, Rth(J-a)=50°C/W
Tc -- IO
θ
360°
180°
360°
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Rectangular
wave
Sine
wave
Case Temperature, Tc -- °C
Average Output Current, IO -- AReverse Voltage, VR -- V
C -- VR
Interterminal Capacitance, C -- pF
0.1 2
100
2
3
5
5
7
7
3357
1.0 23 5 23 5710
IT09871
SBE813
No.8967-3/6
Taping Specifi cation
SBE813-TL-E
SBE813
No.8967-4/6
Outline Drawing Land Pattern Example
SBE813-TL-E
Mass (g) Unit
0.015
* For reference
mm Unit: mm
0.4
0.6
2.8
0.65
SBE813
No.8967-5/6
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SBE813
PS No.8967-6/6
