© 2000 IXYS All rights reserved 1 - 2
VRSM V(BR)min
ÿ
VRRM Anode Cathode
V V V on stud on stud
900 - 800 DS 17-08A DSI 17-08A
1300 - 1200 DS 17-12A DSI 17-12A
1300 1300 1200 DSA 17-12A DSAI 17-12A
1700 1750 1600 DSA 17-16A DSAI 17-16A
1900 1950 1800 DSA 17-18A DSAI 17-18A
Only for Avalanche Diodes
Symbol Test Conditions Maximum Ratings
IF(RMS) TVJ = TVJM 40 A
IF(AV)M Tcase = 125°C; 180° sine 25 A
PRSM DSA(I) types, TVJ = TVJM, tp = 10 ms7kW
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 370 A
VR= 0 t = 8.3 ms (60 Hz), sine 400 A
TVJ = TVJM t = 10 ms (50 Hz), sine 300 A
VR= 0 t = 8.3 ms (60 Hz), sine 320 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 680 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 660 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 450 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 430 A2s
TVJ -40...+180 °C
TVJM 180 °C
Tstg -40...+180 °C
MdMounting torque 2.2-2.8 Nm
19-25 lb.in.
Weight 6g
VRRM = 800-1800 V
IF(RMS)= 40 A
IF(AV)M = 25 A
Features
International standard package,
JEDEC DO-203 AA (DO-4)
Planar glassivated chips
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
Symbol Test Conditions Characteristic Values
IRTVJ = TVJM; VR = VRRM £4mA
VFIF= 55 A; TVJ = 25°C£1.36 V
VT0 For power-loss calculations only 0.85 V
rTTVJ = TVJM 8mW
RthJC DC current 1.5 K/W
RthJH DC current 2.1 K/W
dSCreepage distance on surface 2.05 mm
dAStrike distance through air 2.05 mm
aMax. allowable acceleration 100 m/s2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS 17 DSI 17
DSA 17 DSAI 17
Rectifier Diode
A valanche Diode
A = Anode C = Cathode
DO-203 AA
10-32UNF
DS DSI
DSA DSAI
C
A
A
C
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© 2000 IXYS All rights reserved 2 - 2
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0.20.40.60.81.01.21.41.61.8
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I2t
IFSM
A
IF
A
VFtstms
PF
W
IF(AV)M
ATamb
°C
ts
ZthJH
K/W
A2s
0 50 100 150
0
10
20
30
40
IF(AV)M
Tc
A
°C
V
DS 17 DSI 17
DSA 17 DSAI 17
Fig. 6 Transient thermal impedance junction to heatsink
Fig. 1 Forward characteristics Fig. 2 Surge overload current
IFSM: crest value, t: duration Fig. 3 I2t versus time (1-10 ms)
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature 180° sine
RthJH for various conduction angles d:
dR
thJH (K/W)
DC 2.10
180°2.23
120°2.33
60°2.53
30°2.72
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.1006 0.0021
2 0.5311 0.0881
3 0.8683 2.968
4 0.600 3.20
typ. lim.
TVJ= 180°C
TVJ= 25°C
TVJ = 180°C
TVJ = 45°C
VR = 0 V
RthJA :
2.8 K/W
3.2 K/W
4,8 K/W
6.3 K/W
8.5 K/W
Cu 80x80
DC
180° sin
120°
60°
30°
50Hz, 80% VRRM
TVJ = 45°C
TVJ = 180°C
ase
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