Transistor Description: A Widely used "Industry Standard" silicon NPN transistor in a TO-18 type case designed for applications such as medium-speed switching and amplifiers from audio to VHF frequencies. Absolute Maximum Ratings: Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, IC Total Device Dissipation (TA = +25C), PD Derate above 25C Total Device Dissipation (TC = +25C), PD Derate above 25C Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg : 60V : 60V : 6V : 30mA : 500mW : >3.33mW/C : 1.8W : 12mW/C : -65C to +200C : -65C to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min. Max. Collector-Emitter Breakdown Voltage V(br)ceo IC = 10mA, Ib = 0, Note 1 45 - Collector-Base Breakdown Voltage V(br)cbo IC = 10A, Ie = 0 80 - Emitter-Base Breakdown Voltage V(br)ebo IE = 10A, IC = 0 6 - Collector Cut-off Current Icbo Vcb = 45V, Ie = 0 - 2 Emitter Cut-Off Current Iebo Veb = 5V, Ic = 0 - 2 Unit OFF Characteristics V nA Note 1. Pulse Test: Pulse Width < = 300s, Duty Cycle < = 2%. www.element14.com www.farnell.com www.newark.com Page <1> 16/10/12 V1.0 Transistor Electrical Characteristics: (TA = +25C unless otherwise specified) ON Characteristics Parameter Symbol Test Conditions Min. Max. Unit DC Current Gain hFE VCE = 5V, IC = 0.001mA, Note 1 60 - - VCE = 5V, IC = 0.01mA 100 300 - Vce = 5V, Ic = 10mA, Note 1 - 600 - Collector-Emitter Saturation Voltage VCE(sat) Ic = 10mA, Ib = 0.5mA, Note 1 - 0.5 Base-Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 0.5mA, Note 1 0.7 0.9 Current Gain-Bandwidth Product ft Vce = 5V, Ic = 0.5mA, f = 30MHz, Note 2 45 - MHz Output Capacitance Cobo Vcb = 5V, Ie = 0, f = 1MHz - 6 pF NF Vce = 5V, Ic = 10A, f = 1kHz, Rs = 10k - 3 dB V Small-Signal Characteristics Noise Figure Note 1. Pulse Test: Pulse Width < = 300s, Duty Cycle < = 2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity. 1. EMITTER 2. BASE 3. COLLECTOR Dim. Min. Max. A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.4 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.7 - L 45 45 Dimensions : Millimetres Part Number Table Description Part Number Bipolar Transistor, NPN, 60V, TO-18 2N930A Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <2> 16/10/12 V1.0