LS4148WT
FEATURES
For surface mounted application
Silicon epitaxial planar diode
High speed switching
Ultra small surface mount package
Low leakage current
MECHANICAL DATA
Case : 0603
Case Material: "Green" molding compound, UL
flammability classification 94V-0, (No Br. Sb. Cl)
Terminals: Lead Free Plating.
Polarity : Color band denotes cathode
Weight : Approx. 4mg
SURFACE MOUNT
FAST SWITCHING DIODE
REVERSE VOLTAGE
- 100
V
POWER DISSIPATION
- 400
mW
All Dimensions in millimeter
Max.
Min.
0603
Dim.
A
D
C
B
1.45
0.90
1.65
0.70
0.55
0.25 0.45
0.75
SEMICONDUCTOR
LITE-ON
0603
A
B
C
D
Forward Continuous Current
Units
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Surge Current at
Total Power Dissipation
Thermal Resistance Junction to Ambiant Air
Operating and Storage Temperature Range
Average Rectified Output Currnet
T
J
, T
STG
R
θ
JA
P
d
I
AV
V
RRM
V
RWM
V
DC
I
FM
I
FSM
Value
Symbol
Characteristic
100
Maximum Ratings and Thermal Characteristics
@ T
A
= 25 unless otherwise specified
℃
Electrical Characteristics
@ T
A
= 25 unless otherwise specified
℃
Forward Voltage
Junction Capacitance
V
pF
Reverse Recovery Time
nA
uA
uA
Parameters Symbol Test Condition Min. Max. Unit
Reverse Leakage Current
V
F
I
R
C
J
T
rr
ns
IF = 10mA
VR = 20V
VR = 75V
VR = 20V , T
J
=150
℃
VR = 0V ; F = 1MHz
IF = IR=10mA ; RL = 100Ω
measured at IR=1mA
RMS Reverse Voltage V
RMS
mA
mA
mA
A
/W
℃
℃
70 V
-65 to +175
mW
300
150
800
2.0
400
375
1.0
25
5.0
50
4
4
Reverse Breakdown Voltage V
BR
100
IR = 1uA V
Tp = 1.0 s
Tp = 1.0 us
REV. 2, Oct-2008, KSYS01
RATING AND CHARACTERISTIC CURVES
LS4148WT
0 25 50 75 100 125 150 175 200
JUNCTION TEMPERATURE , ( )
℃
1
10
100
1000
10000
INSTANTANEOUS REVERSE CURRENT ( nA )
Fig.4 - TYPICAL REVERSE CHARACTERISTICS
V
R
= 20V
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE , ( V )
0.1
1
10
100
1000
INSTANTANEOUS FORWARD CURRENT (mA)
Fig.3-TYPICAL FORWARD CHARACTERISTICS
T
J
= 25
℃
0.1 1 10 100
REVERSE VOLTAGE (V)
1.0
1.2
1.4
1.6
1.8
2.0
JUNCTION CAPACITANCE (pF)
Fig.5-TYPICAL JUNCTION CAPACITANCE
f =1MHz
T
J
=25℃
0 25 50 75 100 125 150 175 200
CASE TEMPERATURE , ( )
℃
0
50
100
150
200
AVERAGE FORWARD CURRENT (mA)
Fig.1 - FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
0 25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE , ( )
℃
0
100
200
300
400
500
POWER DISSIPATION (mW)
Fig.2 - POWER DISSIPATION DERATING CURVE
T
J
= 100
℃
Pulse Width: 300us
All dimensions in millimeter
0.85
Typ.
1.00
Typ.
0.51
Typ.
Recommended Mounting Pad Layout
