TPD1018F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1018F High-side Power Switch for Motors, Solenoids, and Lamp Drivers The TPD1018F is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output that can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device is equipped with intelligent self-protection and diagnostic functions. Features z A monolithic power IC with a new structure combining a control block (Bi-CMOS) and a vertical power MOS FET (-MOS) on a single chip z One side of load can be grounded to a high-side switch z Can directly drive a power load from a microprocessor. z Built-in protection against overvoltage, thermal shutdown, and load short-circuiting z Incorporates a diagnosis function that allows diagnosis output to be read externally in the event of load short-circuiting, overvoltage, or overheating. z Low on-resistance : RDS (ON) = 0.8 (max) z Low operating current : IDD = 120A (typ.) (@VDD = 13.2V, VIN = 0V) Weight: 0.08g (typ.) z 10-pin SSOP package for surface mounting Pin Assignment (top view) Block Diagram Note: Due to its MOS structure, this product is sensitive to static electricity. Marking 1 0 1 8 Part No. (or abbreviation code) Lot No. A dot indicates lead (Pb)-free.. 1 2006-10-31 TPD1018F Pin Description Pin No. Symbol Function 1 OUT Output pin. When the load is short-circuited and current in excess of the detection current (0.5A min) flows to the output pin, the current limiter operates to protect the IC. 2, 3, 4 GND Ground pins. 5 VDD Power pin. Incorporates an overvoltage protection function which turns off the output when the voltage applied exceeds 25V (min). Protects IC and load. Incorporates 2V (typ.) hysteresis. 6 IN 7, 8, 9 GND Ground pins. 10 DIAG Self-diagnosis detection pin. Goes low when overcurrent, overheating, or overvoltage is detected. n-channel open drain. Input is CMOS-compatible, with pull-down resistor connected. Even if the input is open, output will not accidentally turn on. Timing Chart Truth Table Input Signal Output Signal Diagnosis Output H H H L L H H L L L L H H L L L L H H L L L L H 2 State Normal Overcurrent Overtemperature Overvoltage 2006-10-31 TPD1018F Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Drain-source Voltage Supply Voltage Input Voltage Rating Unit VDS 60 V DC VDD (1) 25 V Pulse VDD (2) 60 (Rs = 1, = 250ms) V DC VIN (1) -0.5~25 V Pulse VIN (2) VDD (1) + 1.5 (t = 100ms) V IO 0.5 A Output Current Input Current IIN 10 mA Power Dissipation PD 300 mW Operating Temperature Topr -40~125 C Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Tj = -40~125C) Characteristics Operating Supply Voltage Symbol Test Circuit Test Condition Min Typ. Max Unit VDD (opr) 5 12 25 V VDD = 13.2V, VIN = 0V, Tj = 85C 120 300 A VDD = 13.2V, VIN = 5V 1 1.5 mA IDD (1) Supply Current IDD (2) Input Voltage VIH VDD = 13.2V, IO = 300mA 3.5 V VIL VDD = 13.2V, IO = 100A 1.5 V VDD = 13.2V, VIN = 5V 10 100 A VDD = 13.2V, VIN = 0V -0.2 0.2 A VDD = 13.2V, IO = 300mA, Tj = 25C 0.21 0.24 V VDD = 13.2V, IO = 300mA, Tj = 25C 0.7 0.8 VDD = 13.2V, IO = 300mA, Tj = -40~85C 1.2 IIN (1) Input Current IIN (2) On-voltage VDS (ON) RDS (ON)(1) On-resistance RDS (ON)(2) Diagnosis Output Voltage "L" Level VDL VDD = 13.2V, IDL = 1mA 0.4 V Diagnosis Output Current "H" Level IDH VDD = 25V, IDH = 25V 10 A Output Leakage Current IOL VDD = 25V, VIN = 0V 100 A Overcurrent Protection IS VDD = 13.2V, Tj = 25C 0.5 3 A 150 160 200 C Thermal Shutdown Overvoltage Protection Switching Time Temperature Hysteresis Voltage Hysteresis TS TS VDDS VDDS tON tOFF 1 20 50 C 25 V 2 7 V 50 s 10 s VDD = 13.2V, RL = 40 Tj = 25C 3 2006-10-31 TPD1018F Test Circuit 1 Switching Time 4 2006-10-31 TPD1018F 5 2006-10-31 TPD1018F Precaution: 1. 2. Since there is no built-in protection against reverse connection of batteries, etc., provide such protection using external circuits. Since this IC does not include a negative bias protection circuit for the output pin, connect a freewheeling diode (FWD) between OUT and GND when negative bias is applied to the output pin. 6 2006-10-31 TPD1018F Package Dimensions Weight: 0.08g (typ.) 7 2006-10-31 TPD1018F RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL * The information contained herein is subject to change without notice. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2006-10-31