TPD1018F - Toshiba America Electronic Components, Inc.

TPD1018F

2006-10-31

TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

TPD1018F

High-side Power Switch for Motors, Solenoids, and Lamp Drivers

The TPD1018F is a monolithic power IC for high-side switches. The IC

has a vertical MOS FET output that can be directly driven from a CMOS

or TTL logic circuit (e.g., an MPU). The device is equipped with intelligent

self-protection and diagnostic functions.

Features

z A monolithic power IC with a new structure combining a control block

(Bi-CMOS) and a vertical power MOS FET (π-MOS) on a single chip

z One side of load can be grounded to a high-side switch

z Can directly drive a power load from a microprocessor.

z Built-in protection against overvoltage, thermal shutdown, and load

short-circuiting

z Incorporates a diagnosis function that allows diagnosis output to be

read externally in the event of load short-circuiting, overvoltage, or

overheating.

z Low on-resistance : RDS (ON) = 0.8Ω (max)

z Low operating current : IDD = 120μA (typ.) (@VDD = 13.2V, VIN = 0V)

z 10-pin SSOP package for surface mounting

Block Diagram

Pin Assignment (top view)

Note: Due to its MOS structure, this product is sensitive to static electricity.

Marking

Weight: 0.08g (typ.)

1018

Lot No.

dot indicates

lead (Pb)-free..

Part No. (or abbreviation code)

TPD1018F

2006-10-31

Pin Description

Pin No. Symbol Function

1 OUT

Output pin.

When the load is short-circuited and current in excess of the detection current (0.5A min) flows to the

output pin, the current limiter operates to protect the IC.

2, 3, 4 GND Ground pins.

5 VDD

Power pin.

Incorporates an overvoltage protection function which turns off the output when the voltage applied

exceeds 25V (min). Protects IC and load.

Incorporates 2V (typ.) hysteresis.

6 IN

Input is CMOS-compatible, with pull-down resistor connected.

Even if the input is open, output will not accidentally turn on.

7, 8, 9 GND Ground pins.

10 DIAG

Self-diagnosis detection pin. Goes low when overcurrent, overheating, or overvoltage is detected.

n-channel open drain.

Timing Chart

Truth Table

Input Signal Output Signal Diagnosis Output State

H H H

L L H

Normal

H L L

L L H

Overcurrent

H L L

L L H

Overtemperature

H L L

L L H

Overvoltage

TPD1018F

2006-10-31

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source Voltage VDS 60 V

DC VDD (1) 25 V

Supply Voltage

Pulse VDD (2) 60 (Rs = 1Ω, τ = 250ms) V

DC VIN (1) -0.5~25 V

Input Voltage

Pulse VIN (2) V

DD (1) + 1.5 (t = 100ms) V

Output Current IO 0.5 A

Input Current IIN ±10 mA

Power Dissipation PD 300 mW

Operating Temperature Topr -40~125 °C

Junction Temperature Tj 150 °C

Storage Temperature Tstg -55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Electrical Characteristics (Tj = -40~125°C)

Characteristics Symbol

Test

Circuit Test Condition Min Typ. Max Unit

Operating Supply Voltage VDD (opr) ― ― 5 12 25 V

IDD (1) VDD = 13.2V, VIN = 0V,

Tj = 85°C ― 120 300 μA

Supply Current

IDD (2)

―

VDD = 13.2V, VIN = 5V ― 1 1.5 mA

VIH ― V

DD = 13.2V, IO = 300mA 3.5 ― ― V

Input Voltage

VIL ― V

DD = 13.2V, IO = 100μA ― ― 1.5 V

IIN (1) V

DD = 13.2V, VIN = 5V ― 10 100 μA

Input Current

IIN (2)

―

VDD = 13.2V, VIN = 0V -0.2 ― 0.2 μA

On-voltage VDS (ON) ― VDD = 13.2V, IO = 300mA,

Tj = 25°C ― 0.21 0.24 V

RDS (ON)(1) VDD = 13.2V, IO = 300mA,

Tj = 25°C ― 0.7 0.8 Ω

On-resistance

RDS (ON)(2)

―

VDD = 13.2V, IO = 300mA,

Tj = -40~85°C ― ― 1.2 Ω

Diagnosis Output

Voltage “L” Level VDL ― V

DD = 13.2V, IDL = 1mA ― ― 0.4 V

Diagnosis Output

Current “H” Level IDH ― V

DD = 25V, IDH = 25V ― ― 10 μA

Output Leakage Current IOL ― V

DD = 25V, VIN = 0V ― ― 100 μA

Overcurrent Protection IS ― V

DD = 13.2V, Tj = 25°C 0.5 ― 3 A

Temperature TS 150 160 200 °C

Thermal Shutdown

Hysteresis ΔTS

― ―

― 20 50 °C

Voltage VDDS ― 25 ― ― V

Overvoltage

Protection Hysteresis ΔVDDS

―

― ― 2 7 V

tON ― 50 ― μs

Switching Time

tOFF

1 VDD = 13.2V, RL = 40Ω

Tj = 25°C ― 10 ― μs

TPD1018F

2006-10-31

Test Circuit 1

Switching Time

TPD1018F

2006-10-31

TPD1018F

2006-10-31

Precaution:

1. Since there is no built-in protection against reverse connection of batteries, etc., provide such protection using

external circuits.

2. Since this IC does not include a negative bias protection circuit for the output pin, connect a freewheeling diode

(FWD) between OUT and GND when negative bias is applied to the output pin.

TPD1018F

2006-10-31

Package Dimensions

Weight: 0.08g (typ.)

TPD1018F

2006-10-31

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

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Handbook” etc.

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