TLP290
2014-09-08
1
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP290
Programmable Controllers
AC/DC-Input Module
Hybrid ICs
TLP290 consist of photo transistor, optically coupled to two gallium arsenide
infrared emitting diodes connected inverse parallel, and can operate directly
by AC input current
Since TLP290 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as programmable controllers and hybrid ICs.
• Collector-Emitter voltage : 80 V (min)
• Current transfer ratio : 50% (min)
Rank GB : 100% (min)
• Isolation voltage : 3750 Vrms (min)
• Guaranteed performance over -55 to 110 ˚C
• UL recognized : UL1577, File No. E67349
• cUL approved : CSA Component Acceptance Service No.5A,
File No. 67349
• SEMKO approved : EN 60065: 2002, Approved no. 1200315
EN 60950-1: 2001, EN 60335-1: 2002,
Approved no. 1200315
• BSI approved : BS EN 60065: 2002, Approved no. 9036
: BS EN 60950-1: 2006, Approved no. 9037
• Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347
Maximum operating insulation voltage: 707 Vpk
Highest permissible over-voltage: 6000 Vpk
(Note) When an EN 60747-5-5 approved type is needed,
please designate the “Option(V4)”
Construction Mechanical Rating
Creepage distance : 5.0 mm (min)
Clearance : 5.0 mm (min)
Insulation thickness : 0.4 mm (min)
TOSHIBA 11-3C1
Weight: 0.05 g (typ.)
32
41
TLP290
1: Anode
Cathode
2: Cathode
Anode
3: Emitter
4: Collector
Pin Configuration
Unit: mm
Start of commercial production
2012/02
TLP290
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Current Transfer Ratio (Unless otherwise specified, Ta = 25°C)
Note1: Specify both the part number and a rank in this format when ordering
(e.g.) rank GB: TLP290(GB,E
Note: For safety standard certification, however, specify the part number alone.
(e.g.) TLP290(GB,E: TLP290
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol
Note Rating
Unit
LED
R.M.S. forward current IF(RMS) ±50 mA
Input forward current derating (Ta 90°C) IF /Ta -1.5 mA /°C
Input forward current (pulsed) IFP (Note 2) ±1 A
Input power dissipation PD 100 mW
Input power dissipation derating (Ta 90°C) PD/Ta -3.0 mW/°C
Junction temperature Tj 125 °C
Detector
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation PC 150 mW
Collector power dissipation derating (Ta 25°C) PC /Ta -1.5 mW /°C
Junction temperature Tj 125 °C
Operating temperature range Topr -55 to 110 °C
Storage temperature range Tstg -55 to 125 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta 25°C) PT /Ta -2.0 mW /°C
Isolation voltage BVS (Note3) 3750 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width ≤ 100μs, frequency 100Hz
Note3: AC, 1minute, R.H. 60%, Device considered a two terminal device: LED side pins shorted together and
detector side pins shorted together.
TYPE Classification
(Note1)
Current Transfer Ration (%)
(IC / IF)
Marking of Classification
IF = 5 mA, VCE = 5 V, Ta = 25°C
Min Max
TLP290
Blank 50 400
Blank, YE, GR, B, GB
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BLL 200 400 B
Rank GB 100 400 GB
TLP290
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Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Input forward voltage VF I
F = ±10 mA 1.1 1.25 1.4 V
Input capacitance CT V = 0 V, f = 1 MHz - 60 - pF
Detector
Collector-emitter breakdown voltage V(BR) CEO I
C = 0.5 mA 80 - - V
Emitter-collector breakdown voltage V(BR) ECO I
E = 0.1 mA 7 - - V
Dark current ICEO
VCE = 48 V - 0.01 0.08 μA
VCE = 48 V, Ta = 85°C - 2 50 μA
Collector-emitter capacitance CCE V = 0 V, f = 1 MHz - 10 - pF
Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Condition MIn Typ. Max Unit
Current transfer ratio IC / IF
IF = ±5 mA, VCE = 5 V
Rank GB
50 - 400
%
100 - 400
Saturated CTR IC / IF (sat)
IF = ±1 mA, VCE = 0.4 V
Rank GB
- 60 -
%
30 - -
Collector-emitter
saturation voltage VCE (sat)
IC = 2.4 mA, IF = ±8 mA - - 0.3
V
IC = 0.2 mA, IF = ±1 mA
Rank GB
- 0.2 -
- - 0.3
Off-state collector current IC(off) V
F = ± 0.7 V, VCE = 48 V - - 10 μA
Collector current ratio IC (ratio) IC (IF = -5 mA) / IC (IF = 5 mA)
(Fig.1)
0.33 - 3 -
Fig.1: Collector current ratio test circuit
5V)
CE
V,
F1
I
F
(I
C1
I
5V)
CE
V,
F2
I
F
(I
C2
I
C(ratio)
I
==
==
=
VCE
IC1
IC2
IF1
IF2
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Isolation Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Total capacitance (input to output) CS VS = 0V, f = 1 MHz - 0.8 - pF
Isolation resistance RS VS = 500 V, R.H. 60% 1×1012 1014 - Ω
Isolation voltage BVS
AC, 1 minute 3750 - -
Vrms
AC, 1 second, in oil - 10000 -
DC, 1 minute, in oil - 10000 - Vdc
Switching Characteristics (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 10 V, IC = 2 mA
RL = 100 Ω
- 4 -
μs
Fall time tf - 7 -
Turn-on time ton - 7 -
Turn-off time toff - 7 -
Turn-on time ton
RL = 1.9 kΩ (Fig.2)
VCC = 5 V, IF = ±16 mA
- 2 -
μs Storage time ts - 30 -
Turn-off time toff - 60 -
(Fig. 2): Switching time test circuit
VCE
VCC
RL
IF IF
VCE
VCC
0.5V
4.5V
toff
ton
tS
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IF-Ta PC-Ta
Input forward current I F (mA)
Collector power dissipation PC (mW)
Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)
IFP-DR IF-VF
Input forward current (pulsed)
I
FP (mA)
Input forward current IF (mA)
Duty cycle ratio DR Input forward voltage VF (V)
VF/Ta-IF IFP - VFP
Input forward current derating
ΔVF /ΔTa ( m V/ ° C)
Input forward current (pulsed) IFP (mA)
Input forward current IF (mA) Input forward voltage (pulsed) VFP (V)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
0
20
40
60
80
100
-20 0 20 40 60 80 100 120
0
20
40
60
80
100
120
140
160
-20 0 20 40 60 80 100 120
0.1
1
10
100
0.6 0.8 1 1.2 1.4 1.6 1.8 2
-3.2
-2.8
-2.4
-2
-1.6
-1.2
-0.8
-0.4
0.1 1 10 100
1
10
100
1000
0.6 1 1.4 1.8 2.2 2.6 3 3.4
110˚C
85˚C
50˚C
25˚C
0˚C
-25˚C
-55˚C
Pulse width 10μs
Repeative frequency=100Hz
Ta=2 5°C
(Note) This curve shows
the maximum limit to the
input forward current.
(Note) This curve shows the
maximum limit to the collector
power dissipation.
Pules width 100μs
Ta=2 5˚C
10
30
50
100
1000
300
500
3000
10-3 10-2 10-1 100
(Note) This curve shows the
maximum limit to the input
forward current (pulsed).
TLP290
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IC-VCE
IC-VCE
Collector current IC (mA)
Collector current IC (mA)
Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)
IC-IF ICEO-Ta
Collector current IC (mA)
Dark current ICEO (μA)
Input forward voltage IF (mA) Ambient temperature Ta (°C)
IC/IF -IF
Current transfer ratio IC / IF (%)
Input forward current IF (mA)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1
0.1
1
10
100
0.1 1 10 100
0.0001
0.001
0.01
0.1
1
10
020406080100120
10
100
1000
0.1 1 10 100
0
10
20
30
40
50
0246810
5
10
50
30
20
15
Ta=2 5˚C
VCE=10V
VCE=5V
VCE=0.4V
VCE=10V
VCE=5V
VCE=0.4V
24V
10V
5V
VCE=48V
IF=2mA
IF=5mA
10
15
20
30
50
P
C
(max)
Ta=2 5˚C
Ta=2 5˚C
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VCE(sat) - Ta IC - Ta
Collector-emitter saturation voltage
VCE(sat) (V)
Collector current I
C (mA)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Switching time - RL Switching time - Ta
Switching time (μs)
Switching time (μs)
Load resistance RL (kΩ) Ambient temperature Ta (°C)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
-60 -40 -20 0 20 40 60 80 100 120
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120
1
10
100
1000
10000
110100
0.1
1
10
100
1000
-60 -40 -20 0 20 40 60 80 100 120
IF=8mA, IC=2.4mA
IF=1mA, IC=0.2mA VCE=5V
I
F
=0.5m
A
5
1
10
25
toff
Ta=2 5˚C
IF=16mA
VCC=5V
IF=16mA
VCC=5V
RL=1.9k
ts
ton
toff
ts
ton
TLP290
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Soldering and Storage
1. Soldering
1.1 Soldering
When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as
much as possible by observing the following conditions.
1) Using solder reflow
·Temperature profile example of lead (Pb) solder
·Temperature profile example of using lead (Pb)-free solder
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder)
･Please preheat it at 150°C between 60 and 120 seconds.
･Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once.
3) Using a soldering iron
Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may be heated
at most once.
Time (s)
(°C)
240
210
160
60 to 120s less than 30s
Package surface temperature
140
Time (s)
(°C)
260
230
190
60 to 120s
30 to 50s
180
Package surface temperature
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste type
used by the customer within the
described profile.
This profile is based on the device’s
maximum heat resistance guaranteed
value.
Set the preheat temperature/heating
temperature to the optimum temperature
corresponding to the solder paste type
used by the customer within the
described profile.
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2. Storage
1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.
2) Follow the precautions printed on the packing label of the device for transportation and storage.
3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%, respectively.
4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during
storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the
solderability of the leads.
6) When restoring devices after removal from their packing, use anti-static containers.
7) Do not allow loads to be applied directly to devices while they are in storage.
8) If devices have been stored for more than two years under normal storage conditions, it is recommendedthat you check
the leads for ease of soldering prior to use.
TLP290
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EN 60747-5-5 Option: (V4)
Types : TLP290
Type designations for “option: (V4)”, which are tested under EN 60747 requirements.
Ex.: TLP290 (V4GB-TP,E V4 : EN 60747 option
GB : CTR rank type
TP : Standard tape & reel type
E : [[G]]/RoHS COMPATIBLE (Note 4 )
Note: Use TOSHIBA standard type number for safety standard application.
e.g.: TLP290(V4GB-TP,E TLP290
Note4: Please contact your Toshiba sales representative for details on environmental information such
as the product’s RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011
on the restriction of the use of certain hazardous substances in electrical and electronics
equipment.
EN 60747 Isolation Characteristics
Description Symbol Rating Unit
Application classification
for rated mains voltage 150Vrms
for rated mains voltage 300Vrms
I-IV
I-III
Climatic classification 55 / 110 / 21
Pollution degree 2
Maximum operating insulation voltage VIORM 707 Vpk
Input to output test voltage, Method A
Vpr=1.5 × VIORM, type and sample test
tp=10s, partial discharge<5pC
Vpr 1060 Vpk
Input to output test voltage, Method B
Vpr=1.875 × VIORM, 100% production test
tp=1s, partial discharge<5pC
Vpr 1325 Vpk
Highest permissible overvoltage
(transient overvoltage, tpr=60s) VTR 6000 Vpk
Safety limiting values (max. permissible ratings in case of fault,
also refer to thermal derating curve)
current (input current: IF, Psi=0mW)
power (output or total power dissipation)
temperature
Isi
Psi
Tsi
250
400
150
mA
mW
°C
Insulation resistance
VIO=500V, Ta=Tsi Rsi
>
=
109 Ω
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Insulation Related Specifications
Minimum creepage distance Cr 5.0mm
Minimum clearance Cl 5.0mm
Minimum insulation thickness ti 0.4mm
Comparative tracking index CTl 175
1. If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value.
(e.g. at a standard distance between soldering eye centers of 3.5mm).
If this is not permissible, the user shall take suitable measures.
2. This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuit.
VDE test sign: Marking on product
for EN 60747
: Marking on packing
for EN 60747
Marking Example: TLP290
V
V
DE
1pin mark
CTR rank mark
Lot No.
Type
V
Country of origin
e.g.) J: Japan
Option(V4) mark
Process lot No.
P290
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Figure
1 Partial discharge measurement procedure according to EN 60747
Destructive test for qualification and sampling tests.
Method A
(for type and sampling tests,
destructive tests)
t1, t2
t3, t4
tp(Measuring time for
partial discharge)
tb
tini
VVINITIAL(6kV)
Vpr(1060V)
VIORM(707V)
0
t1tini
t3
t2
tP
tb
t4
t
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
tp
Vpr(1325V)
VIORM(707V)
V
t
t3t4
tb
Figure 2 Partial discharge measurement procedure according to EN 60747
Non-destructive test for 100% inspection.
Method B
(for sample test, non-
destructive test)
t3, t4
tp(Measuring time for
partial discharge)
tb
= 0.1 s
= 1 s
= 1.2 s
Figure
3 Dependency of maximum safety ratings on ambient temperature
500
400
300
200
100
0
0 25 50 75 100 125 150 175
500
400
300
200
100
0
Ta (°C)
Psi
Isi
Isi
(mA)
Psi
(
mW
)
TLP290
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product
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Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
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