1MBI600NP-060 1MBI600NN-060 IGBT Module 600V / 600A 1 in one-package Features * High speed switching * Voltage drive * Low inductance module structure Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Symbol VCES Gate-Emitter voltaga Collector Continuous current 1ms Continuous 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Terminals *2 Terminals *3 Unit V V A A A A W C C V N*m N*m N*m Rating 600 20 600 1200 600 1200 2000 +150 -40 to +125 AC 2500 (1min.) 3.5 4.5 1.7 Equivalent Circuit Schematic G . t c u *1 : Recommendable value : 2.5 to 3.5 N*m(M5) or (M6) *2 : Recommendable value : 3.5 to 4.5 N*m(M6) *3 : Recommendable value : 1.3 to 1.7 N*m(M4) E C d e u n i t E Current control circuit d o r p Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr n o c s Characteristics Min. Typ. Di - - 4.5 - - - - - - - - - - - - - - 39600 8800 4000 0.6 0.2 0.6 0.2 - - Conditions Unit VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=600mA VGE=15V, IC=600A VGE=0V VCE=10V f=1MHz VCC=300V IC=600A VGE=15V RG=2.7 ohm IF=600A, VGE=0V IF=600A mA A V V pF Conditions Unit IGBT Diode the base to cooling fin C/W C/W C/W Max. 4.0 60 7.5 2.8 - - - 1.2 0.6 1.0 0.35 3.0 0.3 s V s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*4 Characteristics Min. Typ. - - - - - 0.0125 Max. 0.063 0.11 - *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ IGBT Module 1MBI600NP-060/1MBI600NN-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=125C 1400 1400 1200 1200 1000 1000 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25C 800 600 400 200 400 0 0 1 2 3 4 5 0 1 2 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C VCE [V] 10 Collector-Emitter voltage : 8 6 4 2 0 0 5 10 15 Di 8 . t c u 6 4 d e u n i t n o c s 20 Gate-Emitter voltage : VGE [V] 2 d o r p 0 25 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=2.7 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=300V, RG=2.7 ohm, VGE=15V, Tj=125C 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 3 Collector-Emitter voltage : VCE [V] 10 VCE [V] 600 200 0 Collector-Emitter voltage : 800 100 100 10 10 0 200 400 600 800 1000 0 200 400 600 Collector current : Ic [A] Collector current : Ic [A] http://store.iiic.cc/ 800 1000 IGBT Module 1MBI600NP-060/1MBI600NN-060 Dynamic input characteristics Switching time vs. RG Vcc=300V, Ic=600A, VGE=15V, Tj=25C Tj=25C 500 25 400 20 300 15 200 10 100 5 100 00 0 10 1 5 10 500 1000 1500 2000 2500 0 3500 3000 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 1400 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] Collector current : -Ic [A] (Forward current : IF [A] ) 1200 1000 800 600 400 200 0 0 1 2 d e u n i 50 t n o c s Di 3 Emitter-Collector voltage VECD [V] (Forward voltage : VF [V]) . t c u 100 0 4 200 400 600 800 1000 Forward current : IF [A] Reversed biased safe operating area < 15V, Tj < +VGE=15V, -VGE = = 125C, RG > = 2.7 ohm Switching loss vs. Collector current Vcc=300V, RG=2.7 ohm, VGE=15V 60 6000 50 5000 Collector current : Ic [A] Switching loss : Eon, Eoff, Err [mJ/cycle] d o r p 40 30 20 10 4000 3000 2000 1000 0 0 0 200 400 600 Collector current : Ic [A] 800 1000 0 http://store.iiic.cc/ 100 200 300 400 500 Collector-Emitter voltage : VCE [V] 600 Gate-Emitter voltage : VGE [V] Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 IGBT Module 1MBI600NP-060/1MBI600NN-060 Capacitance vs. Collector-Emitter voltage Tj=25C Transient thermal resistance Capacitance : Cies, Coes, Cres [nF] Thermal resistance : R th (j-c) [C/W] 100 0.1 0.01 10 1 0.001 0.01 0.1 0 1 5 10 15 20 25 30 35 Collector-Emitter voltage : VCE [V] Pulse width : PW [sec.] Outline Drawings, mm Di d e u n i t n o c s . t c u d o r p mass : 370g http://store.iiic.cc/