NTE2345 (NPN) & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT-82 type package designed for use in audio output stages and general amplifier and switching applications.. Features: D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (tp 10ms, 0.1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08K/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Min Typ Max Unit IE = 0, VCBO = 120V - - 0.2 mA IE = 0, VCBO = 120V, TJ = +150C - - 2mA mA ICEO IB = 0, VCEO = 60V - - 0.5 mA Emitter Cutoff Current IEBO IC = 0, VEBO = 5V - - 5 mA DC Current Gain hFE IC = 500mA, VCEO = 3V, Note 1 - 2700 - IC = 3A, VCEO = 3V, Note 1 750 - - IC = 6A, VCEO = 3V, Note 1 - 400 - Collector Cutoff Current Symbol ICBO Test Conditions Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TJ = +25C unless otherwise specified) Parameter Symbol Base-Emitter Voltage VBE Collector-Emitter Saturation Voltage VCE(sat) Test Conditions Min Typ Max Unit IC = 3A, VCEO = 3V, Note 2 2.5 - - V IC = 3A, IB = 12mA 2.0 - - V Small-Signal Current Gain hfe IC = 3A, VCEO = 3V, f = 1MHz 10 - - Cut-Off Frequency fhfe IC = 3A, VCEO = 3V - 100 - kHz Diode, Forward Voltage VF IF = 3A - 1.8 - V VCEO = 60V, tp = 25ms 1 - - A Second Breakdown Collector Current Non-Repetitive, without Heatsink I(SB) Turn-On Time ton IC(on) = 3A, IB(on) = IB(off) = 12mA - 1 2 s Turn-Off Time toff IC(on) = 3A, IB(on) = IB(off) = 12mA - 5 10 s Note 2. VBE decreases by about 3.8mV/K with increasing temperature. Schematic Diagram C C B B E E NPN PNP .307 (7.8) Max .100 (2.54) See Note .147 (3.75) .118 (3.0) Min .437 (11.1) Max B C E .100 (2.54) .602 (15.3) Min .090 (2.29) .047 (1.2) Note: Collector connected to metal part of mounting surface.