2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-40990—Rev. F, 24-May-04
www.vishay.com
1
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)
2N4338 −0.3 to −1−50 0.6 0.6
2N4339 −0.6 to −1.8 −50 0.8 1.5
2N4340 −1 to −3−50 1.3 3.6
2N4341 −2 to −6−50 2 9
FEATURES BENEFITS APPLICATIONS
DLow Cutoff Voltage: 2N4338 <1 V
DHigh Input Impedance
DVery Low Noise
DHigh Gain: AV = 80 @ 20 A
DFull Performance from Low-Voltage
Power Supply: Down to 1 V
DLow Signal Loss/System Error
DHigh System Sensitivity
DHigh-Quality Low-Level Signal
Amplification
DHigh-Gain, Low-Noise Amplifiers
DLow-Current, Low-Voltage
Battery-Powered Amplifiers
DInfrared Detector Amplifiers
DUltrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
1
23
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage −50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature −65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 175_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipationa300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2 mW/_C above 25_C
For applications information see AN102 and AN106.
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
2Document Number: 70240
S-40990—Rev. F, 24-May-04
SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4338 2N4339
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = −1 A , VDS = 0 V −57 −50 −50
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.1 A−0.3 −1−0.6 −1.8 V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 0.2 0.6 0.5 1.5 mA
Gate Reverse Current
IGSS
VGS = −30 V, VDS = 0 V −2−100 −100 pA
Gate Reverse Current IGSS TA = 150_C−4−100 −100 nA
Gate Operating CurrentbIGVDG = 15 V, ID = 0.1 mA −2
pA
Drain Cutoff Current ID(off) VDS = 15 V, VGS = −5 V 2 50 50 pA
Gate-Source Forward VoltagecVGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductance gfs
VDS = 15 V VGS = 0 V f = 1 kHz
0.6 1.8 0.8 2.4 mS
Common-Source
Output Conductance gos
VDS = 15 V, VGS = 0 V, f = 1 kHz
5 15 S
Drain-Source On-Resistance rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz 2500 1700
Common-Source
Input Capacitance Ciss
VDS = 15 V VGS = 0 V f = 1 MHz
5 7 7
pF
Common-Source
Reverse Transfer Capacitance Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
1.5 3 3
pF
Equivalent Input Noise VoltagecenVDS = 10 V, VGS = 0 V, f = 1 kHz 6nV⁄
√Hz
Noise Figure NF VDS = 15 V, VGS = 0 V
f = 1 kHz, RG = 1 M1 1 dB
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = −1 A , VDS = 0 V −57 −50 −50
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.1 A−1 −3−2−6
V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 1.2 3.6 3 9 mA
Gate Reverse Current
IGSS
VGS = −30 V, VDS = 0 V −2−100 −100 pA
Gate Reverse Current IGSS TA = 150_C−4−100 −100 nA
Gate Operating CurrentbIGVDG = 15 V, ID = 0.1 mA −2
Drain Cutoff Current
ID( ff)
VDS = 15 V
VGS = −5 V 2 50 pA
Drain Cutoff Current ID(off) VDS = 15 V VGS = −10 V 3 70
p
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-40990—Rev. F, 24-May-04
www.vishay.com
3
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Dynamic
Common-Source
Forward Transconductance gfs
VDS = 15 V VGS = 0 V f = 1 kHz
1.3 3 2 4 mS
Common-Source
Output Conductance gos
VDS = 15 V, VGS = 0 V, f = 1 kHz
30 60 S
Drain-Source On-Resistance rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz 1500 800
Common-Source
Input Capacitance Ciss
VDS = 15 V VGS = 0 V f = 1 MHz
5 7 7
pF
Common-Source
Reverse Transfer Capacitance Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
1.5 3 3
pF
Equivalent Input Noise VoltagecenVDS = 10 V, VGS = 0 V, f = 1 kHz 6nV⁄
√Hz
Noise Figure NF VDS = 15 V, VGS = 0 V
f = 1 kHz, RG = 1 M1 1 dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA
b. Pulse test: PW v300 s, duty cycle v3%.
c. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
10
0
8
6
4
2
0−5−4−3−2−10181262430
5
4
1
3
2
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
VGS(off) − Gate-Source Cutoff Voltage (V) VDG − Drain-Gate Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
IGSS @ 125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
500 mA
500 mA
ID = 100 mA
ID = 100 mA
gfs − Forward Transconductance (mS)
IDSS − Saturation Drain Current (mA)
IG − Gate Leakage (A)
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
4Document Number: 70240
S-40990—Rev. F, 24-May-04
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
1500
0−3−5−4−2−1
1200
900
600
300
0
0.01 0.1 1
2
1.6
0.8
0.4
0
10
8
4
2
0
400
01216420
320
160
80
0
2
012168420
1.6
1.2
0.8
0.4
0
Output Characteristics
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance
vs. Drain Current
Output Characteristics
ID − Drain Current (mA)VGS(off) − Gate-Source Cutoff Voltage (V)
VDS − Drain-Source Voltage (V) VDS − Drain-Source Voltage (V)
TA = −55_C
125_C
VGS = 0 V
−0.2 V
−0.4 V
VGS = 0 V
−0.6 V
−0.9 V
−0.1 V
−0.3 V
rDS @ ID = 100 A, VGS = 0 V
gos @ VDS= 10 V, VGS = 0 V, f = 1 kHz
rDS
gos
VGS(off) = −1.5 V
−0.3 V
6 1.2
240
8
VDS = 10 V
f = 1 kHz
VGS(off) = −0.7 V VGS(off) = −1.5 V
−1.2 V
−0.5 V
Output Characteristics
300
0 0.5
240
180
120
60
0
VDS − Drain-Source Voltage (V)
0.1 0.2 0.3 0.4
VGS = 0 V
−0.1 V
−0.2 V
−0.3 V
−0.4 V
VGS(off) = −0.7 V
−0.5 V
Output Characteristics
1
0 1.0
0.8
0.6
0.4
0.2
0
VDS − Drain-Source Voltage (V)
0.2 0.4 0.6 0.8
VGS = 0 V
−0.3 V
−0.6 V
−0.9 V
VGS(off) = −1.5 V
−1.2 V
25_C
rDS(on) − Drain-Source On-Resistance ( Ω )
gos − Output Conductance (µS)
gfs − Forward Transconductance (mS)
ID − Drain Current (mA)
ID − Drain Current (µA)
ID − Drain Current (mA)
ID − Drain Current (µA)
2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-40990—Rev. F, 24-May-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
500
0−0.3−0.2−0.1 −0.4 −0.5
400
300
200
100
0
Transfer Characteristics
VGS − Gate-Source Voltage (V)
TA = −55_C
125_C
VGS(off) = −0.7 V VDS = 10 V
25_C
1.5
0−0.3 −0.4−0.2−0.1 −0.5
1.2
0.9
0.6
0.3
0
Transconductance vs. Gate-Source Voltage
VGS(off) = −0.7 V
TA = −55_C
125_C
VGS − Gate-Source Voltage (V)
VDS = 10 V
f = 1 kHz
25_C
2
0−1.2 −1.6 −2−0.8−0.4
1.6
1.2
0.8
0.4
0
Transfer Characteristics
VGS − Gate-Source Voltage (V)
TA = −55_C
125_C
VGS(off) = −1.5 V
25_C
VDS = 10 V
4
−1.2 −2−1.6−0.8−0.40
3.2
2.4
1.6
0.8
0
Transconductance vs. Gate-Source Voltage
VGS(off) = −1.5 V
TA = −55_C
125_C
VGS − Gate-Source Voltage (V)
25_C
VDS = 10 V
f = 1 kHz
0.1 10.01 0.01 0.1 1
200
160
120
80
40
0
2000
1600
1200
800
400
0
ID − Drain Current (mA)
AV+
gfs RL
1)RLgos
RL+10 V
ID
Assume VDD = 15 V, VDS = 5 V
VGS(off) = −0.7 V
−1.5 V
Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current
ID − Drain Current (mA)
TA = 25_C
VGS(off) = −0.7 V
−1.5 V
ID − Drain Current (µA)
ID − Drain Current (mA)
rDS(on) − Drain-Source On-Resistance ( Ω ) gfs − Forward Transconductance (mS)
gfs − Forward Transconductance (mS)
AV − Voltage Gain
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
6Document Number: 70240
S-40990—Rev. F, 24-May-04
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10 100 1 k 100 k10 k
10
0−12 −16 −20−8−4
8
6
4
2
0
5
0−12 −20−16−8−4
4
3
2
1
0
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
VGS − Gate-Source Voltage (V)
VDS = 0 V
10 V
f = 1 MHz
VGS − Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
VDS = 0 V
10 V
f = 1 MHz
20
16
12
8
4
0
Output Conductance vs. Drain Current
ID − Drain Current (mA)
VDS = 10 V
f = 1 kHz
TA = −55_C
125_C
Equivalent Input Noise Voltage vs. Frequency
f − Frequency (Hz)
VDS = 10 V
ID = 100 A
ID = IDSS
3
2.4
1.8
0.8
0.4
0
0.01 0.1 1
VGS(off) = −1.5 V
25_C
en − Noise Voltage nV / Hz
gos − Output Conductance (µS) Ciss − Input Capacitance (pF)
Crss − Reverse Feedback Capacitance (pF)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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