2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) 2N4338 -0.3 to -1 -50 0.6 0.6 2N4339 -0.6 to -1.8 -50 0.8 1.5 2N4340 -1 to -3 -50 1.3 3.6 2N4341 -2 to -6 -50 2 9 FEATURES D D D D Low Cutoff Voltage: 2N4338 <1 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 A BENEFITS APPLICATIONS D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitable for military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST201 series data sheet. TO-206AA (TO-18) S 1 2 3 D G and Case Top View ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 175_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes a. Derate 2 mW/_C above 25_C For applications information see AN102 and AN106. Document Number: 70240 S-40990--Rev. F, 24-May-04 www.vishay.com 1 2N4338/4339/4340/4341 Vishay Siliconix SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4338 Parameter Symbol Test Conditions Typa Min V(BR)GSS IG = -1 A , VDS = 0 V -57 -50 VGS(off) VDS = 15 V, ID = 0.1 A 2N4339 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb IDSS IGSS -0.3 VDS = 15 V, VGS = 0 V VGS = -30 V, VDS = 0 V TA = 150_C 0.2 -50 -1 -0.6 0.6 0.5 -1.8 V 1.5 mA -2 -100 -100 pA -4 -100 -100 nA 50 50 IG VDG = 15 V, ID = 0.1 mA -2 Drain Cutoff Current ID(off) VDS = 15 V, VGS = -5 V 2 Gate-Source Forward Voltagec VGS(F) IG = 1 mA , VDS = 0 V 0.7 pA V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Drain-Source On-Resistance 0.6 1.8 0.8 2.4 mS 5 15 S 2500 1700 5 7 7 1.5 3 3 VDS = 15 V V, VGS = 0 V, V f = 1 kHz rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltagec en VDS = 10 V, VGS = 0 V, f = 1 kHz Noise Figure NF VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 M VDS = 15 V V, VGS = 0 V, V f = 1 MHz pF nV Hz 6 1 1 dB SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4340 Parameter Symbol Test Conditions Typa Min V(BR)GSS IG = -1 A , VDS = 0 V -57 -50 VGS(off) VDS = 15 V, ID = 0.1 A Max 2N4341 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb IDSS IGSS IG Drain Cutoff Current ID(off) D( ff) Gate-Source Forward Voltage VGS(F) www.vishay.com 2 -1 VDS = 15 V, VGS = 0 V VGS = -30 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 0.1 mA VDS = 15 V 1.2 -3 -2 3.6 3 -6 V 9 mA -2 -100 -100 pA -4 -100 -100 nA -2 VGS = -5 V 2 VGS = -10 V 3 IG = 1 mA , VDS = 0 V -50 0.7 50 pA p 70 V Document Number: 70240 S-40990--Rev. F, 24-May-04 2N4338/4339/4340/4341 Vishay Siliconix SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4340 Parameter Symbol Typa Test Conditions 2N4341 Min Max Min Max Unit 1.3 3 2 4 mS 30 60 S 1500 800 5 7 7 1.5 3 3 Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos VDS = 15 V V, VGS = 0 V, V f = 1 kHz Drain-Source On-Resistance rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltagec en VDS = 10 V, VGS = 0 V, f = 1 kHz Noise Figure NF VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 M VDS = 15 V V, VGS = 0 V, V f = 1 MHz pF nV Hz 6 1 1 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 s, duty cycle v3%. c. This parameter not registered with JEDEC. dB NPA TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 4 6 3 gfs IDSS 4 2 2 1 0 0 0 -1 -2 -3 -4 VGS(off) - Gate-Source Cutoff Voltage (V) Document Number: 70240 S-40990--Rev. F, 24-May-04 -5 10 nA ID = 100 mA 500 mA TA = 125_C 1 nA IG - Gate Leakage (A) IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 8 Gate Leakage Current 5 gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 10 IGSS @ 125_C 100 pA 500 mA 10 pA ID = 100 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA 0 6 12 18 24 30 VDG - Drain-Gate Voltage (V) www.vishay.com 3 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 2 10 gos 1200 8 6 900 rDS 600 4 300 2 rDS @ ID = 100 A, VGS = 0 V gos @ VDS= 10 V, VGS = 0 V, f = 1 kHz 0 gfs - Forward Transconductance (mS) VGS(off) = -1.5 V gos - Output Conductance (S) rDS(on) - Drain-Source On-Resistance ( ) 1500 Common-Source Forward Transconductance vs. Drain Current 0 0 -1 -2 -3 -4 1.6 TA = -55_C 1.2 25_C 0.8 125_C 0.4 0 0.01 -5 0.1 VGS(off) - Gate-Source Cutoff Voltage (V) Output Characteristics 2 VGS(off) = -0.7 V VGS(off) = -1.5 V VGS = 0 V 1.6 ID - Drain Current (mA) ID - Drain Current (A) 320 -0.1 V 240 -0.2 V 160 -0.3 V 80 -0.5 V VGS = 0 V 1.2 -0.3 V 0.8 -0.6 V 0.4 -0.4 V 0 -0.9 V -1.2 V 0 0 4 8 12 16 20 0 VDS - Drain-Source Voltage (V) 4 8 12 16 Output Characteristics 1 VGS(off) = -0.7 V VGS(off) = -1.5 V 240 0.8 ID - Drain Current (mA) VGS = 0 V -0.1 V 180 -0.2 V 120 -0.3 V 60 -0.3 V VGS = 0 V 0.6 -0.6 V 0.4 0.2 -0.4 V -0.9 V -0.5 V -1.2 V 0 0 0 0.1 0.2 0.3 VDS - Drain-Source Voltage (V) www.vishay.com 4 20 VDS - Drain-Source Voltage (V) Output Characteristics 300 ID - Drain Current (A) 1 ID - Drain Current (mA) Output Characteristics 400 VDS = 10 V f = 1 kHz 0.4 0.5 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain-Source Voltage (V) Document Number: 70240 S-40990--Rev. F, 24-May-04 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 500 VGS(off) = -0.7 V VDS = 10 V VGS(off) = -1.5 V ID - Drain Current (mA) TA = -55_C 300 25_C 200 125_C 100 TA = -55_C 1.2 25_C 0.8 0.4 0 125_C 0 0 -0.1 -0.2 -0.3 -0.4 0 -0.5 -0.4 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 1.2 -1.2 -1.6 -2 Transconductance vs. Gate-Source Voltage 4 VGS(off) = -1.5 V VDS = 10 V f = 1 kHz gfs - Forward Transconductance (mS) gfs - Forward Transconductance (mS) VGS(off) = -0.7 V -0.8 VGS - Gate-Source Voltage (V) 1.5 TA = -55_C 25_C 0.9 0.6 125_C 0.3 0 VDS = 10 V f = 1 kHz 3.2 2.4 TA = -55_C 25_C 1.6 0.8 125_C 0 0 -0.1 -0.2 -0.3 -0.4 0 -0.5 VGS - Gate-Source Voltage (V) g fs R L 160 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V 120 10 V RL + ID 80 -0.8 -1.2 -1.6 -2 On-Resistance vs. Drain Current 2000 rDS(on) - Drain-Source On-Resistance ( ) AV + -0.4 VGS - Gate-Source Voltage (V) Circuit Voltage Gain vs. Drain Current 200 AV - Voltage Gain VDS = 10 V 1.6 400 ID - Drain Current (A) Transfer Characteristics 2 VGS(off) = -0.7 V -1.5 V 40 0 TA = 25_C 1600 VGS(off) = -0.7 V 1200 800 -1.5 V 400 0 0.01 0.1 ID - Drain Current (mA) Document Number: 70240 S-40990--Rev. F, 24-May-04 1 0.01 0.1 1 ID - Drain Current (mA) www.vishay.com 5 2N4338/4339/4340/4341 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage 10 5 Crss - Reverse Feedback Capacitance (pF) f = 1 MHz Ciss - Input Capacitance (pF) 8 6 VDS = 0 V 4 10 V 2 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 0 f = 1 MHz 4 3 VDS = 0 V 2 1 10 V 0 0 -4 -8 -12 -16 -20 0 VGS - Gate-Source Voltage (V) 20 -12 -16 -20 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V f = 1 kHz VDS = 10 V 2.4 Hz 16 en - Noise Voltage nV / gos - Output Conductance (S) VGS(off) = -1.5 V -8 VGS - Gate-Source Voltage (V) Output Conductance vs. Drain Current 3 -4 1.8 TA = -55_C 0.8 25_C 0.4 ID = 100 A 12 8 ID = IDSS 4 125_C 0 0 0.01 0.1 ID - Drain Current (mA) www.vishay.com 6 1 10 100 1k 10 k 100 k f - Frequency (Hz) Document Number: 70240 S-40990--Rev. F, 24-May-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1