2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-40990—Rev. F, 24-May-04
www.vishay.com
1
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)
2N4338 0.3 to 150 0.6 0.6
2N4339 0.6 to 1.8 50 0.8 1.5
2N4340 1 to 350 1.3 3.6
2N4341 2 to 650 2 9
FEATURES BENEFITS APPLICATIONS
DLow Cutoff Voltage: 2N4338 <1 V
DHigh Input Impedance
DVery Low Noise
DHigh Gain: AV = 80 @ 20 A
DFull Performance from Low-Voltage
Power Supply: Down to 1 V
DLow Signal Loss/System Error
DHigh System Sensitivity
DHigh-Quality Low-Level Signal
Amplification
DHigh-Gain, Low-Noise Amplifiers
DLow-Current, Low-Voltage
Battery-Powered Amplifiers
DInfrared Detector Amplifiers
DUltrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
1
23
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage 50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature 65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature 55 to 175_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipationa300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2 mW/_C above 25_C
For applications information see AN102 and AN106.
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
2Document Number: 70240
S-40990—Rev. F, 24-May-04
SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4338 2N4339
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = 1 A , VDS = 0 V 57 50 50
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.1 A0.3 10.6 1.8 V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 0.2 0.6 0.5 1.5 mA
Gate Reverse Current
IGSS
VGS = 30 V, VDS = 0 V 2100 100 pA
Gate Reverse Current IGSS TA = 150_C4100 100 nA
Gate Operating CurrentbIGVDG = 15 V, ID = 0.1 mA 2
pA
Drain Cutoff Current ID(off) VDS = 15 V, VGS = 5 V 2 50 50 pA
Gate-Source Forward VoltagecVGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductance gfs
VDS = 15 V VGS = 0 V f = 1 kHz
0.6 1.8 0.8 2.4 mS
Common-Source
Output Conductance gos
VDS = 15 V, VGS = 0 V, f = 1 kHz
5 15 S
Drain-Source On-Resistance rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz 2500 1700
Common-Source
Input Capacitance Ciss
VDS = 15 V VGS = 0 V f = 1 MHz
5 7 7
pF
Common-Source
Reverse Transfer Capacitance Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
1.5 3 3
pF
Equivalent Input Noise VoltagecenVDS = 10 V, VGS = 0 V, f = 1 kHz 6nV
Hz
Noise Figure NF VDS = 15 V, VGS = 0 V
f = 1 kHz, RG = 1 M1 1 dB
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = 1 A , VDS = 0 V 57 50 50
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.1 A1 326
V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 1.2 3.6 3 9 mA
Gate Reverse Current
IGSS
VGS = 30 V, VDS = 0 V 2100 100 pA
Gate Reverse Current IGSS TA = 150_C4100 100 nA
Gate Operating CurrentbIGVDG = 15 V, ID = 0.1 mA 2
Drain Cutoff Current
ID( ff)
VDS = 15 V
VGS = 5 V 2 50 pA
Drain Cutoff Current ID(off) VDS = 15 V VGS = 10 V 3 70
p
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-40990—Rev. F, 24-May-04
www.vishay.com
3
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Dynamic
Common-Source
Forward Transconductance gfs
VDS = 15 V VGS = 0 V f = 1 kHz
1.3 3 2 4 mS
Common-Source
Output Conductance gos
VDS = 15 V, VGS = 0 V, f = 1 kHz
30 60 S
Drain-Source On-Resistance rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz 1500 800
Common-Source
Input Capacitance Ciss
VDS = 15 V VGS = 0 V f = 1 MHz
5 7 7
pF
Common-Source
Reverse Transfer Capacitance Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
1.5 3 3
pF
Equivalent Input Noise VoltagecenVDS = 10 V, VGS = 0 V, f = 1 kHz 6nV
Hz
Noise Figure NF VDS = 15 V, VGS = 0 V
f = 1 kHz, RG = 1 M1 1 dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA
b. Pulse test: PW v300 s, duty cycle v3%.
c. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
10
0
8
6
4
2
0543210181262430
5
4
1
3
2
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
VGS(off) Gate-Source Cutoff Voltage (V) VDG Drain-Gate Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
IGSS @ 125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
500 mA
500 mA
ID = 100 mA
ID = 100 mA
gfs Forward Transconductance (mS)
IDSS Saturation Drain Current (mA)
IG Gate Leakage (A)
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
4Document Number: 70240
S-40990—Rev. F, 24-May-04
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
1500
035421
1200
900
600
300
0
0.01 0.1 1
2
1.6
0.8
0.4
0
10
8
4
2
0
400
01216420
320
160
80
0
2
012168420
1.6
1.2
0.8
0.4
0
Output Characteristics
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance
vs. Drain Current
Output Characteristics
ID Drain Current (mA)VGS(off) Gate-Source Cutoff Voltage (V)
VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V)
TA = 55_C
125_C
VGS = 0 V
0.2 V
0.4 V
VGS = 0 V
0.6 V
0.9 V
0.1 V
0.3 V
rDS @ ID = 100 A, VGS = 0 V
gos @ VDS= 10 V, VGS = 0 V, f = 1 kHz
rDS
gos
VGS(off) = 1.5 V
0.3 V
6 1.2
240
8
VDS = 10 V
f = 1 kHz
VGS(off) = 0.7 V VGS(off) = 1.5 V
1.2 V
0.5 V
Output Characteristics
300
0 0.5
240
180
120
60
0
VDS Drain-Source Voltage (V)
0.1 0.2 0.3 0.4
VGS = 0 V
0.1 V
0.2 V
0.3 V
0.4 V
VGS(off) = 0.7 V
0.5 V
Output Characteristics
1
0 1.0
0.8
0.6
0.4
0.2
0
VDS Drain-Source Voltage (V)
0.2 0.4 0.6 0.8
VGS = 0 V
0.3 V
0.6 V
0.9 V
VGS(off) = 1.5 V
1.2 V
25_C
rDS(on) Drain-Source On-Resistance ( Ω )
gos Output Conductance (µS)
gfs Forward Transconductance (mS)
ID Drain Current (mA)
ID Drain Current (µA)
ID Drain Current (mA)
ID Drain Current (µA)
2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-40990—Rev. F, 24-May-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
500
00.30.20.1 0.4 0.5
400
300
200
100
0
Transfer Characteristics
VGS Gate-Source Voltage (V)
TA = 55_C
125_C
VGS(off) = 0.7 V VDS = 10 V
25_C
1.5
00.3 0.40.20.1 0.5
1.2
0.9
0.6
0.3
0
Transconductance vs. Gate-Source Voltage
VGS(off) = 0.7 V
TA = 55_C
125_C
VGS Gate-Source Voltage (V)
VDS = 10 V
f = 1 kHz
25_C
2
01.2 1.6 20.80.4
1.6
1.2
0.8
0.4
0
Transfer Characteristics
VGS Gate-Source Voltage (V)
TA = 55_C
125_C
VGS(off) = 1.5 V
25_C
VDS = 10 V
4
1.2 21.60.80.40
3.2
2.4
1.6
0.8
0
Transconductance vs. Gate-Source Voltage
VGS(off) = 1.5 V
TA = 55_C
125_C
VGS Gate-Source Voltage (V)
25_C
VDS = 10 V
f = 1 kHz
0.1 10.01 0.01 0.1 1
200
160
120
80
40
0
2000
1600
1200
800
400
0
ID Drain Current (mA)
AV+
gfs RL
1)RLgos
RL+10 V
ID
Assume VDD = 15 V, VDS = 5 V
VGS(off) = 0.7 V
1.5 V
Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current
ID Drain Current (mA)
TA = 25_C
VGS(off) = 0.7 V
1.5 V
ID Drain Current (µA)
ID Drain Current (mA)
rDS(on) Drain-Source On-Resistance ( Ω ) gfs Forward Transconductance (mS)
gfs Forward Transconductance (mS)
AV Voltage Gain
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
6Document Number: 70240
S-40990—Rev. F, 24-May-04
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10 100 1 k 100 k10 k
10
012 16 2084
8
6
4
2
0
5
012 201684
4
3
2
1
0
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
VGS Gate-Source Voltage (V)
VDS = 0 V
10 V
f = 1 MHz
VGS Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
VDS = 0 V
10 V
f = 1 MHz
20
16
12
8
4
0
Output Conductance vs. Drain Current
ID Drain Current (mA)
VDS = 10 V
f = 1 kHz
TA = 55_C
125_C
Equivalent Input Noise Voltage vs. Frequency
f Frequency (Hz)
VDS = 10 V
ID = 100 A
ID = IDSS
3
2.4
1.8
0.8
0.4
0
0.01 0.1 1
VGS(off) = 1.5 V
25_C
en Noise Voltage nV / Hz
gos Output Conductance (µS) Ciss Input Capacitance (pF)
Crss Reverse Feedback Capacitance (pF)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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