82912 TKIM/O2908AB MSIM TC-00001689 No. A1126-1/8
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
August, 2013
FH105A
RF Transistor
10V, 30mA, fT=8GHz, NPN Dual MCP6
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
• Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting
effi ciency greatly
• The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package
• Optimal for differential amplifi cation due to excellent thermal equilibrium and pair capability
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 20 V
Collector-to-Emitter Voltage VCEO 10 V
Emitter-to-Base Voltage VEBO 1.5 V
Collector Current IC30 mA
Collector Dissipation PC
When mounted on ceramic substrate (250mm
2
×0.8mm) 1unit
150 mW
Total Power Dissipation PT
When mounted on ceramic substrate (250mm
2
×0.8mm)
300 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7026A-005
Ordering number : ENA1126A
Product & Package Information
• Package : MCP6
• JEITA, JEDEC : SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TR Marking
Electrical Connection
1 : Collector1
2 : Base2
3 : Collector2
4 : Emitter2
5 : Emitter1
6 : Base1
MCP6
654
12 3
2.0
0.425 0.425
0.65
2.1
1.25
0.3
0.2
0.9
0.2
0 to 0.08
0.15
E1B1
Tr1
Tr2
E2
C1 B2 C2
FH105A-TR-E
105
LOT No.
LOT No.
TR
11
FH105A
No. A1 126-2/8
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 μA
Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 μA
DC Current Gain hFE VCE=5V, IC=10mA 90 200
DC Current Gain Ratio
hFE(small/large)
VCE=5V, IC=10mA 0.7 0.95
Base-to-Emitter Voltage Diffrence
VBE(large-small)
VCE=5V, IC=10mA 1.0 mV
Gain-Bandwidth Product fTVCE=5V, IC=10mA 5 8 GHz
Output Capacitance Cob VCB=10V, f=1MHz 0.45 0.7 pF
Forward Transfer Gain ⏐S21e⏐2VCE=5V, IC=10mA, f=1.5GHz 8 10 dB
Noise Figure NF VCE=5V, IC=5mA, f=1.5GHz 1.4 3.0 dB
Note) The specifi cations shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which
pair capability is also shown.
Ordering Information
Device Package Shipping memo
FH105A-TR-E MCP6 3,000pcs./reel Pb Free
Collector Current, IC -- mA
hFE -- IC
DC Current Gain, hFE
Collector Current, IC -- mA
fT -- IC
Gain-Bandwidth Product, fT -- GHz
3
2
100
7
5
5
3
2
10
7
5
0.1 1.0 10
23 57 100
2 3 57 2 3 57
VCE=5V
IT00322 IT14098
1.0 23 35710 52
7
5
1.0
3
2
10
2
VCE=5V
VCE=1V
FH105A
No. A1 126-3/8
Collector Current, IC -- mA
NF -- IC
Noise Figure, NF -- dB
Ambient Temperature, Ta -- °C
PC -- Ta
Collector Dissipation, PC -- mW
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Cre -- VCB
Reverse Transfer Capacitance, Cre -- pF
Collector Current, IC -- mA
⏐S21e⏐2 -- IC
Forward Transfer Gain, ⏐S21e⏐2 -- dB
5
5
3
2
1.0
7
0.1
7
5
3
2
570.1 23 57
1.0 23 235710 5
5
3
2
1.0
7
0.1
7
5
3
2
70.1 23 57
1.0 23 2357
10 5
f=1MHz f=1MHz
IT00324 IT00325
Collector Current, IC -- mA
⏐S21e⏐2 -- IC
Forward Transfer Gain, ⏐S21e⏐2 -- dB
Collector Current, IC -- mA
NF -- IC
Noise Figure, NF -- dB
12
10
8
6
4
2
0
0.1 1.0
23 357 2 2357
10 5
16
14
12
10
8
6
4
2
031.0
57 10
23 57 100
23 57
16
14
12
10
8
6
4
2
031.0
57 10
23 57 100
23 57
f=1.5GHz VCE=2V
f=1GHz
12
10
8
6
4
2
0
0.1 1.0
23 357 2 2357
10 5
f=1.5GHz f=1GHz
5V
VCE=1V
VCE=1V
5V
VCE=1V
2V
IT00326 IT00327
IT00328 IT00329
5V
2V
350
250
200
300
150
100
50
00 16014012010080604020
Total dissipation
1 unit
IT00330
When mounted on ceramic substrate
(250mm2✕0.8mm)
FH105A
No. A1 126-4/8
90°
120°
150°
±180°
--150°
--120°
--90°
--30°
--60°
0
60°
30°
20
16
12
84
90°
120°
150°
±180°
--150°
--120°
--90°
--30°
--60°
0
60°
30°
0.04 0.08 0.12 0.16 0.2
S Parameter
S11e
f=200MHz to 2000MHz(200MHz Step) S21e
f=200MHz to 2000MHz(200MHz Step)
S22e
f=200MHz to 2000MHz(200MHz Step)
S12e
f=200MHz to 2000MHz(200MHz Step)
2.0GHz
2.0GHz
2.0GHz
0.2GHz
0.2GHz
VCE=5V
IC=10mA
VCE=2V
IC=3mA
VCE=5V
IC=5mA
2.0GHz
2.0GHz
2.0GHz
2.0GHz
0.2GHz
0.2GHz
0.2GHz
0.2GHz
VCE=5V
IC=10mA VCE=1V
IC=1mA
VCE=2V
IC=3mA
VCE=5V
IC=5mA
j50
j25
j10
010
--j10
--j25
--j50
--j100
--j150
--j200
--j250
j100
j150
j200
j250
100 150 250
2.0GHz
2.0GHz
2.0GHz2.0GHz
0.2GHz 0.2GHz
0.2GHz
0.2GHz
50
25
VCE=5V
IC=10mA
VCE=1V
IC=1mA VCE=2V
IC=3mA
VCE=5V
IC=5mA
IT00331 IT00332
IT00333
VCE=1V
IC=1mA
0.2GHz
2.0GHz
j50
j25
j10
010 25
--j10
--j25
--j50
--j100
--j150
--j200
--j250
j100
j150
j200
j250
100 150 250
50
2.0GHz
2.0GHz
2.0GHz
2.0GHz
0.2GHz
VCE=1V
IC=1mA
VCE=5V
IC=5mA
IT00334
VCE=5V
IC=10mA
0.2GHz
0.2GHz
0.2GHz
VCE=2V
IC=3mA
0.2GHz
FH105A
No. A1 126-5/8
S Parameters (Common emitter)
VCE=5V, IC=5mA, ZO=50Ω
Freq(MHz) ⏐S11⏐∠
S11 ⏐S21⏐∠
S21 ⏐S12⏐∠
S12 ⏐S22⏐∠
S22
200 0.763 -37.5 11.926 146.9 0.036 70.7 0.892 -19.1
400 0.590 -65.4 9.202 124.3 0.058 60.9 0.740 -29.1
600 0.456 -85.5 7.173 109.4 0.073 57.4 0.631 -33.7
800 0.374 -102.0 5.743 98.7 0.086 56.7 0.566 -35.8
1000 0.323 -115.0 4.785 90.5 0.098 56.7 0.528 -37.2
1200 0.288 -127.5 4.105 83.6 0.110 57.2 0.505 -38.4
1400 0.264 -137.7 3.599 77.5 0.123 57.7 0.488 -39.6
1600 0.248 -147.4 3.213 71.3 0.136 57.6 0.476 -41.2
1800 0.239 -156.9 2.905 66.4 0.150 57.6 0.466 -43.3
2000 0.235 -165.7 2.651 61.3 0.165 57.2 0.462 -45.4
VCE=5V, IC=10mA, ZO=50Ω
Freq(MHz) ⏐S11⏐∠
S11 ⏐S21⏐∠
S21 ⏐S12⏐∠
S12 ⏐S22⏐∠
S22
200 0.605 -52.6 16.354 136.2 0.031 67.5 0.804 -23.9
400 0.417 -84.6 11.011 113.3 0.048 62.4 0.622 -30.5
600 0.319 -106.3 8.026 100.5 0.062 62.2 0.533 -32.0
800 0.266 -124.6 6.250 91.3 0.076 63.4 0.491 -32.4
1000 0.238 -136.5 5.115 84.7 0.090 64.3 0.469 -33.2
1200 0.225 -148.9 4.336 78.8 0.104 64.4 0.458 -34.6
1400 0.215 -158.3 3.813 73.4 0.119 64.5 0.449 -35.8
1600 0.213 -167.3 3.365 68.1 0.135 63.8 0.443 -37.7
1800 0.212 -175.6 3.030 63.5 0.150 63.1 0.436 -39.6
2000 0.216 -177.5 2.754 58.9 0.166 62.5 0.438 -41.9
VCE=2V, IC=3mA, ZO=50Ω
Freq(MHz) ⏐S11⏐∠
S11 ⏐S21⏐∠
S21 ⏐S12⏐∠
S12 ⏐S22⏐∠
S22
200 0.842 -30.7 8.491 153.0 0.044 72.5 0.931 -17.1
400 0.704 -56.3 7.161 131.9 0.075 60.9 0.808 -28.8
600 0.579 -76.1 5.879 116.3 0.095 54.1 0.696 -36.2
800 0.480 -93.1 4.882 104.2 0.109 51.0 0.615 -40.6
1000 0.417 -106.3 4.154 95.0 0.121 49.3 0.564 -43.5
1200 0.376 -119.6 3.597 87.1 0.132 48.7 0.526 -45.8
1400 0.343 -130.2 3.212 80.2 0.143 48.6 0.496 -47.5
1600 0.319 -140.5 2.875 73.4 0.154 48.7 0.475 -49.6
1800 0.303 -150.0 2.604 67.7 0.166 48.6 0.461 -51.6
2000 0.298 -160.0 2.383 62.1 0.179 48.9 0.451 -52.9
VCE=1V, IC=1mA, ZO=50Ω
Freq(MHz) ⏐S11⏐∠
S11 ⏐S21⏐∠
S21 ⏐S12⏐∠
S12 ⏐S22⏐∠
S22
200 0.945 -18.9 3.296 162.5 0.054 77.2 0.980 -11.0
400 0.884 -37.3 3.206 145.9 0.102 65.9 0.934 -20.5
600 0.810 -53.6 2.942 131.2 0.139 56.3 0.870 -29.0
800 0.728 -69.4 2.711 117.8 0.166 48.6 0.811 -35.5
1000 0.667 -82.5 2.449 107.0 0.187 42.5 0.763 -40.9
1200 0.605 -95.8 2.252 96.9 0.199 37.3 0.715 -45.7
1400 0.561 -106.1 2.061 88.1 0.207 33.5 0.673 -49.4
1600 0.518 -117.2 1.909 79.5 0.212 30.6 0.638 -53.4
1800 0.492 -127.5 1.766 72.2 0.215 28.6 0.611 -56.5
2000 0.465 -137.9 1.658 65.2 0.217 27.6 0.592 -59.9
FH105A
No. A1 126-6/8
Embossed Taping Specifi cation
FH105A-TR-E
FH105A
No. A1 126-7/8
Outline Drawing Land Pattern Example
FH105A-TR-E
Mass (g) Unit
0.007
* For reference
mm Unit: mm
0.65 0.65
0.4
0.8
1.9
FH105A
PS No. A1126-8/8
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