OM7625/BGA7124/9/3,598 - NXP Semiconductors

1. Product profile

1.1 General description

The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless

surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and

superior performance up to 2700 MHz. Its power saving features include easy quie scent

current adjustment enabling class-AB operation and logic-level shutdown control to

reduce the supply current to 4 μA.

1.2 Features and benefits

400 MHz to 2700 MHz frequency operating range

16 dB small signal gain at 2 GHz

25 dBm output po wer at 1 dB ga in com pr es sion

Integrated active biasing

External matching allows broad application optimization of the electrical performance

3.3 V or 5 V single supply operation

All pins ESD protected

1.3 Applications

1.4 Quick reference data

[1] The supply current is adjustable; see Section 8.1 “Supply current adjustment”.

[2] Operation outside this range is possible but not guaranteed.

[3] PL = 11 dBm per tone; spacing = 1 MHz.

BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

Rev. 3 — 9 September 2010 Product data sheet

Wireless infrastructure (base st ation,

repeater, backhaul systems)

E-metering

Broadband CPE/MoCA Satellite Master Antenna TV (SMATV)

Industrial applications WLAN/ISM/RFID

Table 1. Quick reference data

Input and output impedances matched to 50

, SHDN = HIGH (shutdown disabled). Typical values

at VCC =5V; I

CC = 130 mA; Tcase =25

C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICC supply current VCC = 5.0 V [1] 50 - 170 mA

f frequency [2] 400 - 2700 MHz

Gppower gain f = 2140 MHz 14.5 16 17.5 dB

PL(1dB) output power at 1 dB gain compression f = 2140 MHz 23.5 24.5 - dBm

IP3Ooutput third-order intercept point f = 2140 MHz [3] 34.5 37.5 - dBm

Product data sheet Rev. 3 — 9 September 2010 2 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

2. Pinning information

2.1 Pinning

2.2 Pin description

[1] This pin is DC-coupled and requires an external DC-blocking capacitor.

[2] RF decoupled.

[3] The center metal base of the SOT908-1 also functions as heatsink for the power amplifier.

3. Ordering information

Fig 1. HVSON8 package pin configuration

014aab046

CC(BIAS)

SHDNV

CC(RF)

RF_INV

CC(RF)

ICQ_ADJ

GND PAD

n.c.

Transparent top view

terminal 1

index area

BGA7124

n.c.

Table 2. Pin descripti on

Symbol Pin Description

n.c. 1, 4 not connected

VCC(RF) 2, 3 RF output for the power amplifier and DC supply input for the

RF transistor collector [1]

VCC(BIAS) 5 bias supply voltage [2]

SHDN 6 shutdown control function ena bled/disabled

RF_IN 7 RF input for the power amplifier [1]

ICQ_ADJ 8 quiescent collector current adjustment controlled by an external resistor

GND GND pad RF and DC ground[3]

Table 3. Ordering i nformation

Type number Package

Name Description Version

BGA7124 HVSON8 plastic thermal enhanced very thin small outline

package; no leads; 8 terminals; body 3 × 3 × 0.85 mm SOT908-1

Product data sheet Rev. 3 — 9 September 2010 3 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

4. Functional diagram

5. Shutdown control

Fig 2. Fu nc tional diagram

BANDGAP

OUTPUT MATCH

INPUT MATCH

BIAS

ENABLE

V/I

CONVERTER

RF_OUT

GND

RF_IN

SHDN

ICQ_ADJ

2, 3

014aab047

CC(BIAS)

CC(RF)

Table 4. Shutdown control settings

Mode Mode description Function description Pin

SHDN Vctrl(sd) (V) Ictrl(sd) (μA)

Min Max Min Max

Idle medium power MMIC fully off;

minimal supply current shutdown control enabled 0 0 0.7 - 2

TX medium power MMIC transmit mode shutdown control disabled 1 2.5 VCC(BIAS) -9

Product data sheet Rev. 3 — 9 September 2010 4 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

6. Limiting values

[1] See Figure 3 for safe operating area.

[2] The supply current is adjustable; see Section 8.1 “Supply current adjustment”.

[3] If Vctrl(sd) exceeds VCC(BIAS), the internal ESD circuit can be damaged. To prevent this, it is recommended that the Ictrl(sd) is limited to

20 mA. If the SHDN function is not used, the SHDN pin should be connected to the VCC(BIAS) pin.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC(RF) RF supply voltage [1] -6.0 V

VCC(BIAS) bias supply voltage [1] -6.0 V

ICC supply current [1][2] 50 200 mA

Vctrl(sd) shutdown contro l vol tage [3] 0.0 VCC(BIAS) V

Pi(RF) RF input power - 20 dBm

Tcase case temperature −40 +85 °C

Tjjunction temperature - 150 °C

VESD electrostatic discharge voltage Human Body Model (HBM);

According JEDEC standard 22-A114E - 2000 V

Charged Device Model (CDM);

According JEDEC standard 22-C101B - 500 V

Exceeding the safe operating area limits may cause serious damage to the product.

The impact on ICC due to the spread of the external ICQ resistor (R2) should be taken into account.

The product-spread on ICC should be taken into account (see Section 8 “Static characteristics”).

Fig 3. BGA7124 DC safe operating area

VCC(RF) (V)

276453

014aab048

150

100

200

250

ICC

(mA)

Product data sheet Rev. 3 — 9 September 2010 5 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

7. Thermal characteristics

[1] defined as thermal resistance from junction to GN D paddle.

8. Static characteristics

[1] The supply current is adjustable; see Section 8.1 “Supply current adjustment”.

[2] See Section 12 “Application information”.

8.1 Supply current adjustment

The supply current can be adjusted by changing the value of external ICQ resistor (R2);

(see Figure 4).

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Max Unit

Rth(j-mb) thermal resistance from junction to

mounting base Tcase =85°C; VCC =5V;

ICC = 130 mA [1] 32 - K/W

Table 7. Characteristics

Input and output impedances matched to 50

, pin SHDN = HIGH (shutdown disabled). Typical

values at VCC =3.3V or V

CC =5V; T

case =25

C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICC supply current VCC = 3.3 V [1] 50 - 200 mA

R1 = 0 Ω; R2 = 1330 Ω[2] 115 130 145 mA

R1 = 2.2 Ω; R2 = 1070 Ω[2] 135 160 185 mA

VCC = 5.0 V [1] 50 - 170 mA

R1 = 0 Ω; R2 = 1960 Ω[2] 110 130 150 mA

R1 = 2.2 Ω; R2 = 1650 Ω[2] 125 150 175 mA

during shutdown; pin

SHDN = LOW (shutdown enabled) -46μA

Product data sheet Rev. 3 — 9 September 2010 6 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

9. Dynamic characteristics

a. 5 V supply voltage. b. 3.3 V supply voltage

Fig 4. Supply current as a function of th e value of R2

VCC = 5 V; R1 = 0

R2 (kΩ)

1.6 2.4 3.2 4.0 4.43.62.82.0

014aab049

130

170

ICC

(mA)

VCC = 3.3 V; R1 = 0

R2 (kΩ)

0.9 3.42.91.9 2.41.4

014aab050

110

140

170

200

ICC

(mA)

Table 8. Characteristics at VCC = 5 V

Input and output impedances match ed to 50

, pin SHDN = HIGH (shutdown disabled). Typical values at VCC =5V;

ICC = 130 mA; Tcase =25

C; see Section 12 “Application information”; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

f frequency [1] 400 - 2700 MHz

Gppower gain for small signals

f = 940 MHz - 22.7 - dB

f = 1960 MHz - 16.4 - dB

f = 2140 MHz 14.5 16.0 17.5 dB

f = 2445 MHz [2] - 14.2 - dB

PL(1dB) output power at 1 dB gain compression f = 940 MHz - 25.0 - dBm

f = 1960 MHz - 24.5 - dBm

f = 2140 MHz 23.5 24.5 - dBm

f = 2445 MHz [2] - 23.5 - dBm

IP3Ooutput third-order intercept point f = 940 MHz [3] - 38.5 - dBm

f = 1960 MHz [3] - 38.0 - dBm

f = 2140 MHz [3] 34.5 37.5 - dBm

f = 2445 MHz [2][3] - 36.0 - dBm

NF noise figure f = 940 MHz [4] -5.2- dB

f = 1960 MHz [4] -4.6- dB

f = 2140 MHz [4] -4.86.5dB

f = 2445 MHz [2][4] -5.4- dB

Product data sheet Rev. 3 — 9 September 2010 7 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

[1] Operation outside this range is possible but not guaranteed.

[2] ICC = 150 mA; see Section 12 “Application information”.

[3] PL = 11 dBm per tone; spacing = 1 MHz.

[4] Defined at Pi = −40 dBm; small signal conditions.

RLin input return loss f = 940 MHz - −15 - dB

f = 1960 MHz - −11 - dB

f = 2140 MHz - −17 - dB

f = 2445 MHz [2] -−13 - dB

RLout output return loss f = 940 MHz - −8- dB

f = 1960 MHz - −12 - dB

f = 2140 MHz - −15 - dB

f = 2445 MHz [2] -−25 - dB

Table 8. Characteristics at VCC = 5 V …continued

Input and output impedances match ed to 50

, pin SHDN = HIGH (shutdown disabled). Typical values at VCC =5V;

ICC = 130 mA; Tcase =25

C; see Section 12 “Application information”; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 3 — 9 September 2010 8 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

[1] Operation outside this range is possible but not guaranteed.

[2] ICC = 160 mA; see Section 12 “Application information”.

[3] PL= 11 dBm per tone; spacing = 1 MHz.

[4] Defined at Pi = −40 dBm; small signal conditions.

Table 9. Characteristics at VCC = 3.3 V

Input and output impedances match ed to 50

, pin SHDN = HIGH (shutdown disabled). Typical values at VCC =3.3V;

ICC = 130 mA; Tcase =25

C, see Section 12 “Application information”; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

f frequency [1] 400 - 2700 MHz

Gppower gain for small signals

f = 940 MHz - 22.5 - dB

f = 2445 MHz [2] -13.8- dB

PL(1dB) output power at 1 dB gain compression f = 940 MHz - 23.5 - dBm

f = 2445 MHz [2] -22.0- dBm

IP3Ooutput third-order intercept point f = 94 0 MHz [3] -36.4- dBm

f = 2445 MHz [2][3] -35.2- dBm

NF noise figure f = 940 MHz [4] -5.5- dB

f = 2445 MHz [2][4] -5.5- dB

RLin input return loss f = 940 MHz - −15 - dB

f = 2445 MHz [2] -−10 - dB

RLout output return loss f = 940 MHz - −9- dB

f = 2445 MHz [2] -−25 - dB

Product data sheet Rev. 3 — 9 September 2010 9 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

9.1 Scattering parameters

Table 10. Scattering parameters at 5 V, MMIC only

VCC =5V; I

CC =130mA; T

case =25

f (MHz) s11 s21 s12 s22

Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree)

400 0.85 161.56 22.94 82.35 0.01 17.02 0.46 −156.50

500 0.90 159.44 11.82 82.58 0.01 27.08 0.63 176.13

600 0.90 152.15 9.98 73.86 0.01 24.10 0.64 169.61

700 0.89 145.75 8.59 66.00 0.01 21.41 0.64 164.34

800 0.88 139.33 7.55 58.86 0.02 18.47 0.65 159.29

900 0.87 133.19 6.74 51.66 0.02 14.00 0.65 154.44

1000 0.87 127.07 6.14 45.11 0.02 11.25 0.65 149.58

1100 0.87 120.67 5.61 38.20 0.02 7.99 0.65 144.25

1200 0.87 114.18 5.19 31.60 0.02 4.20 0.64 139.60

1300 0.86 107.68 4.82 25.08 0.02 0.31 0.64 134.85

1400 0.86 100.86 4.51 18.49 0.02 −4.01 0.63 130.13

1500 0.86 94.14 4.23 11.74 0.02 −8.65 0.63 125.02

1600 0.86 87.48 3.99 5.25 0.03 −13.15 0.63 120.13

1700 0.86 80.83 3.77 −1.50 0.03 −18.16 0.62 114.98

1800 0.86 74.14 3.56 −8.13 0.03 −23.28 0.62 109.78

1900 0.86 67.39 3.37 −14.94 0.03 −28.54 0.62 104.46

2000 0.86 60.70 3.19 −21.68 0.03 −33.68 0.63 99.01

2100 0.86 53.97 3.02 −28.68 0.03 −39.37 0.63 93.58

2200 0.86 47.78 2.85 −35.14 0.03 −44.84 0.63 88.17

2300 0.86 41.57 2.69 −41.70 0.03 −50.27 0.64 83.06

2400 0.86 35.43 2.54 −48.11 0.03 −55.62 0.64 78.10

2500 0.86 29.74 2.39 −54.19 0.04 −60.71 0.65 73.31

2600 0.86 24.79 2.27 −60.06 0.04 −65.48 0.65 68.64

2700 0.85 19.58 2.15 −66.14 0.04 −70.66 0.66 64.16

Product data sheet Rev. 3 — 9 September 2010 10 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

10. Reliability information

11. Moisture sensitivity

Table 11. Scattering parameters at 3.3 V, MMIC only

VCC =3.3V; I

CC =130mA; T

case =25

f (MHz) s11 s21 s12 s22

Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree)

400 0.84 161.94 21.25 73.81 0.01 17.66 0.57 −154.41

500 0.91 159.25 11.56 79.01 0.01 28.15 0.65 178.05

600 0.90 151.98 9.67 70.71 0.01 24.80 0.66 171.32

700 0.90 145.57 8.29 63.37 0.01 21.89 0.66 165.59

800 0.89 139.18 7.26 56.54 0.02 19.04 0.66 160.37

900 0.88 132.87 6.48 49.74 0.02 15.35 0.66 155.28

1000 0.88 126.78 5.90 43.30 0.02 11.89 0.66 150.23

1100 0.87 120.46 5.39 36.53 0.02 8.33 0.66 144.88

1200 0.87 113.94 4.97 30.05 0.02 4.50 0.65 140.03

1300 0.87 107.48 4.62 23.62 0.02 0.35 0.65 135.35

1400 0.87 100.69 4.32 17.15 0.02 −3.92 0.64 130.48

1500 0.86 93.93 4.05 10.48 0.02 −8.62 0.64 125.46

1600 0.86 87.28 3.81 4.05 0.03 −13.28 0.64 120.31

1700 0.86 80.71 3.61 −2.66 0.03 −18.26 0.64 115.13

1800 0.86 74.00 3.40 −9.21 0.03 −23.51 0.64 109.99

1900 0.86 67.27 3.22 −15.97 0.03 −28.87 0.63 104.66

2000 0.86 60.64 3.05 −22.71 0.03 −34.22 0.64 99.36

2100 0.86 53.84 2.89 −29.68 0.03 −39.95 0.64 93.93

2200 0.86 47.60 2.72 −36.12 0.03 −45.44 0.64 88.55

2300 0.86 41.43 2.57 −42.66 0.03 −51.06 0.65 83.38

2400 0.86 35.35 2.42 −49.01 0.04 −56.53 0.65 78.44

2500 0.85 29.64 2.28 −55.12 0.04 −61.72 0.66 73.56

2600 0.85 24.72 2.16 −60.91 0.04 −66.76 0.66 68.80

2700 0.85 19.59 2.04 −66.91 0.04 −71.84 0.67 64.30

Table 12. Reliability

Life test Conditions Intrinsic failure rate

HTOL According JESD85; confidence level 60 %; Tj=55°C;

activation energy = 0.7 eV ; acceleration factor determined

according Arrhen iu s

Table 13. Moisture sensitivity level

Test methodology Class

JESD-22-A113 1

Product data sheet Rev. 3 — 9 September 2010 11 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

12. Application information

12.1 5 V applications

12.1.1 920 MHz to 960 MHz

See Table 14 for a list of components.

PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm.

Fig 5. 5 V/130 mA application schematic; 920 MHz to 960 MHz

C10

C9 C7

ICQ_ADJ SHDN

enable

MSL1 MSL2 MSL3 MSL8MSL5 MSL6 MSL7

RF_IN

RF_OUT

BGA7124

50 Ω50 Ω

014aab051

MSL4

CC(RF)

CC(BIAS)

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 6. Ou tput power at 1 dB gain c om pression as a

function of frequency Fig 7. Power gain as a function of frequency

f (GHz)

0.92 0.960.950.93 0.94

014aab052

PL(1dB)

(dBm)

(1)

(2)

(3)

f (GHz)

0.92 0.960.950.93 0.94

014aab053

(dB)

(1)

(2)

(3)

Product data sheet Rev. 3 — 9 September 2010 12 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

Tcase = 25 °C. (1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 8. Inpu t return loss, ou tpu t return loss and

isolation as a function of frequency Fig 9. Output third-order intercept point as a function

of frequency

RLout

RLin

ISL

f (GHz)

0.92 0.960.950.93 0.94

014aab054

−20

−10

RLin, RLout, ISL

(dB)

−30

f (GHz)

0.92 0.960.950.93 0.94

014aab055

IP3O

(dBm)

(1)

(3)

(2)

See Table 14 for a list of components.

Fig 10. 5 V/130 mA application reference board ; 920 MHz to 960 MHz

GND

VCC

GND

n.c.

ena ble

GND

C10

C5C4

MSL7

MSL6

MSL4 MSL5

MSL8MSL3MSL1

MSL2

J IHGFEDCBA 12345678910

RF in

RF out

014aab056

Product data sheet Rev. 3 — 9 September 2010 13 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

[1] MSL1 to MSL8 dimensions specified as Width (W), Spacing (S) and Length (L).

Table 14. 5 V/130 mA application list of components; 920 MHz to 960 MHz

See Figure 5 and Figure 10 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;

copper plating thickness = 35

Component Description Value Function Remarks

C1, C6 capacitor 68 pF DC blocking Murata GRM1885C1H680JA01D

C2, C3 capacitor 3.3 pF input match Murata GRM1885C1H3R3CZ01D

C4 capacitor 3.9 pF output match Murata GRM1885C1H3R9CZ01D

C5 capacitor 1.0 pF output match Murata GRM1885C1H1R0CZ01D

C7 capacitor 68 pF RF decouplin g Murata GRM1885C1H680JA01D

C8 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A

C9 capacitor 10 μF DC decoupling AVX 1206ZG106ZAT2A

C10 capacitor 12 pF noise decoupling Murata GRM1555C1H120JZ01D

J1, J2 RF connector SMA Emerson Network Power

142-0701-841

J3 DC connector 6-pins MOLEX

L1 inductor 2.2 nH output match Tyco electronics 36501J2N2JTDG

L2 inductor 22 nH DC feed Tyco electronics 36501J022JTDG

MSL1[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm input ma tch

MSL2[1] micro stripline 1.14 mm ×0.8 mm ×2.95 mm input match

MSL3[1] micro stripline 1.14 mm ×0.8 mm ×7.75 mm input match

MSL4[1] micro stripline 1.14 mm ×0.8 mm ×23.4 mm out pu t match

MSL5[1] micro stripline 1.14 mm ×0.8 mm ×2.2 mm output match

MSL6[1] micro stripline 1.14 mm ×0.8 mm ×3.15 mm output match

MSL7[1] micro stripline 1.14 mm ×0.8 mm ×2.3 mm output match

MSL8[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm output match

R1 resistor 0 ΩMulticomp MC 0.063W 0603 0R

R2 resistor

(trimmer) 2 kΩbias adjustment Bourns 3214W-1-202E

Product data sheet Rev. 3 — 9 September 2010 14 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

12.1.2 1930 MHz to 1990 MHz

See Table 15 for a list of components.

PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm.

Fig 11. 5 V/130 mA application schematic; 1930 MHz to 1990 MHz

C7 C5

ICQ_ADJ SHDN

enable

MSL1 MSL2 MSL6MSL4 MSL5

RF_IN

RF_OUT

BGA7124

50 Ω50 Ω

014aab05

MSL3

CC(BIAS)

CC(RF)

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 12. Ou tput power at 1 dB gain c om pr ession as a

function of frequency Fig 13. Power gain as a function of frequency

014aab058

f (GHz)

1.93 1.991.971.95

PL(1dB)

(dBm)

(1)

(2)

(3)

014aab059

f (GHz)

1.93 1.991.971.95

(dB)

(1)

(2)

(3)

Product data sheet Rev. 3 — 9 September 2010 15 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

Tcase = 25 °C. (1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 14. Input return loss, outpu t return loss and

isolation as a function of frequency Fig 15. Output third-order intercept point as a function

of frequency

RLout

RLin

ISL

f (GHz)

1.93 1.991.971.95

014aab060

−20

−10

RLin, RLout, ISL

(dB)

−30

f (GHz)

1.93 1.991.971.95

014aab061

IP3O

(dBm) (2)

(1)

(3)

See Table 15 for a list of components.

Fig 16. 5 V/130 mA application reference board; 1930 MHz to 1990 MHz

GND

VCC

GND

n.c.

enable

GND

C3C2

MSL6

MSL4 MSL5

MSL1 MSL2 MSL3

J IHGFEDCBA 12345678910

RF in

RF out

014aab062

Product data sheet Rev. 3 — 9 September 2010 16 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

[1] MSL1 to MSL6 dimensions specified as Width (W), Spacing (S) and Length (L).

12.1.3 2110 MHz to 2170 MHz

Table 15. 5 V/130 mA ap plication list of components; 1930 MHz to 1990 MHz

See Figure 11 and Figure 16 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;

copper plating thickness = 35

Component Description Value Function Remarks

C1, C4 capacitor 15 pF DC blocking Murata GRM1885C1H150JA01D

C2 capacitor 2.2 pF input match Murata GRM1885C1H2R2CZ01D

C3 capacitor 1.2 pF output match Murata GRM1885C1H1R2CZ01D

C5 capacitor 15 pF RF decoupling Murata GRM1885C1H150JA01D

C6 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A

C7 capacitor 10 μF DC decoupling AVX 1206ZG106ZAT2A

J1, J2 RF connector SMA Emerson Network Power

142-0701-841

J3 DC connector 6- pins MOLEX

L1 inductor 22 nH DC feed Tyco electronics 36501J022JTDG

MSL1[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm input match

MSL2[1] micro stripline 1.14 mm ×0.8 mm ×10.8 mm input match

MSL3[1] micro stripline 1.14 mm ×0.8 mm ×5.8 mm output match

MSL4[1] micro stripline 1.14 mm ×0.8 mm ×2.2 mm output match

MSL5[1] micro stripline 1.14 mm ×0.8 mm ×3.7 mm output match

MSL6[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm output match

R1 resistor 0 ΩMulticomp MC 0.063W 0603 0R

R2 resistor (trimmer) 2 kΩbias adjustment Bourns 3214W-1-202E

See Table 16 for a list of components.

PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm.

Fig 17. 5 V/130 mA application schematic; 2110 MHz to 2170 MHz

RF_OUT

C7 C5

ICQ_ADJ SHDN

enable

MSL1 MSL2 MSL6

MSL4 MSL5

RF_IN

BGA7124

50 Ω50 Ω

014aab06

MSL3

CC(BIAS)

CC(RF)

Product data sheet Rev. 3 — 9 September 2010 17 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 18. Ou tput power at 1 dB gain c om pr ession as a

function of frequency Fig 19. Power gain as a function of frequency

014aab064

f (GHz)

2.11 2.172.152.13

PL(1dB)

(dBm)

(1)

(2)

(3)

014aab065

f (GHz)

2.11 2.172.152.13

(dB)

(1)

(2)

(3)

Tcase = 25 °C. (1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 20. Input return loss, outpu t return loss and

isolation as a function of frequency Fig 21. Output third-order intercept point as a function

of frequency

RLout

RLin

ISL

f (GHz)

2.11 2.172.152.13

014aab066

−20

−10

RLin, RLout, ISL

(dB)

−30

(3)

(2)

(1)

f (GHz)

2.11 2.172.152.13

014aab067

IP3O

(dBm)

Product data sheet Rev. 3 — 9 September 2010 18 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

See Table 16 for a list of components.

Fig 22. 5 V/130 mA application reference board; 2110 MHz to 2170 MHz

GND

VCC

GND

n.c.

enable

GND

C3C2

MSL6

MSL4 MSL5

MSL1 MSL2 MSL3

J IHGFEDCBA 12345678910

RF in

RF out

014aab068

Table 16. 5 V/130 mA ap plication list of components; 2110 MHz to 2170 MHz

See Figure 17 and Figure 22 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;

copper plating thickness = 35

Component Description Value Function Remarks

C1, C4 capacitor 15 pF DC blocking Murata GRM1885C1H150JA01D

C2 capacitor 2.7 pF input match Murata GRM1885C1H2R7CZ01D

C3 capacitor 1.5 pF output match Murata GRM1885C1H1R5CZ01D

C5 capacitor 15 pF RF de coupling Murata GRM1885C1H150JA01D

C6 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A

C7 capacitor 10 μF DC decoupli ng AVX 1206ZG106ZAT2A

J1, J2 RF connector SMA Emerson Network Power 142-0701-841

J3 DC connector 6-pins MOLEX

L1 inductor 22 nH DC feed Tyco elec tronics 36501J022JTDG

MSL1[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm input match

MSL2[1] micro stripline 1.14 mm ×0.8 mm ×10.8 mm input match

MSL3[1] micro stripline 1.14 mm ×0.8 mm ×5.8 mm output match

MSL4[1] micro stripline 1.14 mm ×0.8 mm ×2.5 mm output match

MSL5[1] micro stripline 1.14 mm ×0.8 mm ×3.5 mm output match

Product data sheet Rev. 3 — 9 September 2010 19 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

[1] MSL1 to MSL6 dimensions specified as Width (W), Spacing (S) and Length (L).

12.1.4 2405 MHz to 2485 MHz

MSL6[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm output match

R1 resistor 0 ΩMulticomp MC 0.063W 0603 0R

R2 resistor

(trimmer) 2 kΩbias

adjustment Bourns 3214W-1-202E

Table 16. 5 V/130 mA ap plication list of components; 2110 MHz to 2170 MHz …continued

See Figure 17 and Figure 22 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;

copper plating thickness = 35

Component Description Value Function Remarks

See Table 17 for a list of components.

PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm.

Fig 23. 5 V/130 mA application schematic; 2405 MHz to 2485 MHz

C4C3

C8 C6

ICQ_ADJ SHDN

enable

MSL1 MSL2 MSL3 MSL5MSL4

RF_IN

RF_OUT

BGA7124

50 Ω50 Ω

014aab069

CC(BIAS)

CC(RF)

Product data sheet Rev. 3 — 9 September 2010 20 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 24. Ou tput power at 1 dB gain c om pr ession as a

function of frequency Fig 25. Power gain as a function of frequency

(3)

(2)

(1)

f (GHz)

2.405 2.4852.4652.425 2.445

014aab070

PL(1dB)

(dBm)

(3)

(2)

(1)

f (GHz)

2.405 2.4852.4652.425 2.445

014aab071

(dB)

Tcase = 25 °C. (1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 26. Input return loss, outpu t return loss and

isolation as a function of frequency Fig 27. Output third-order intercept point as a function

of frequency

RLout

RLin

ISL

f (GHz)

2.405 2.4852.4652.425 2.445

014aab072

−20

−10

RLin, RLout, ISL

(dB)

−30

f (GHz)

2.405 2.4852.4652.425 2.445

014aab073

IP3O

(dBm)

(1)

(2)

(3)

Product data sheet Rev. 3 — 9 September 2010 21 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

See Table 17 for a list of components.

Fig 28. 5 V/130 mA application reference board; 2405 MHz to 2485 MHz

GND

VCC

GND

n.c.

enable

GND

C4C3C2

MSL5MSL4MSL1 MSL2 MSL3

J IHGFEDCBA 12345678910

RF in

RF out

014aab074

Table 17. 5 V/130 mA ap plication list of components; 2405 MHz to 2485 MHz

See Figure 23 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;

copper plating thickness = 35

Component Description Value Function Remarks

C1, C5 capacitor 12 pF DC blocking Murata GRM1885C1H120JA01D

C2 capacitor 2.2 pF input match Murata GRM1885C1H2R2CZ01D

C3 capacitor 0.82 pF output match Murata GRM1885C1HR82CZ01D

C4 capacitor 0.68 pF output match Murata GRM1885C1HR68CZ01D

C6 capacitor 12 pF RF decoupling Murata GRM1885C1H120JA01D

C7 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A

C8 capacitor 10 μF DC decoupling AVX 1206ZG106ZAT2A

J1, J2 RF connector SMA Emerson Network Power

142-0701-841

J3 DC connector 6-pins MOLEX

L1 inductor 22 nH DC feed Tyco electronics 36501J022JTDG

MSL1[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm input match

MSL2[1] micro stripline 1.14 mm ×0.8 mm ×10.8 mm input match

MSL3[1] micro stripline 1.14 mm ×0.8 mm ×7.3 mm output match

MSL4[1] micro stripline 1.14 mm ×0.8 mm ×4.3 mm output match

Product data sheet Rev. 3 — 9 September 2010 22 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

[1] MSL1 to MSL5 dimensions specified as Width (W), Spacing (S) and Length (L).

12.2 3.3 V applications

12.2.1 920 MHz to 960 MHz

MSL5[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm output match

R1 resistor 2.2 ΩMulticomp MC 0.063W 0603 2R2

R2 resistor (trimmer) 2 kΩbias adjustment Bourns 3214W-1-202E

Table 17. 5 V/130 mA ap plication list of components; 2405 MHz to 2485 MHz …continued

See Figure 23 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;

copper plating thickness = 35

Component Description Value Function Remarks

See Table 18 for a list of components.

PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm.

Fig 29. 3.3 V/130 mA application schematic; 920 MHz to 960 MHz

C3 C4

C9 C7

ICQ_ADJ SHDN

enable

MSL1 MSL2 MSL3 MSL4 MSL8MSL5 MSL6 MSL7

RF_IN

RF_OUT

BGA7124

50 Ω50 Ω

014aab07

CC(BIAS)

CC(RF)

Product data sheet Rev. 3 — 9 September 2010 23 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 30. Ou tput power at 1 dB gain c om pr ession as a

function of frequency Fig 31. Power gain as a function of frequency

f (GHz)

0.92 0.960.950.93 0.94

014aab076

PL(1dB)

(dBm)

(1)

(2)

(3)

f (GHz)

0.92 0.960.950.93 0.94

014aab077

(dB)

(1)

(2)

(3)

Tcase = 25 °C. (1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 32. Input return loss, outpu t return loss and

isolation as a function of frequency Fig 33. Output third-order intercept point as a function

of frequency

RLout

RLin

ISL

f (GHz)

0.92 0.960.950.93 0.94

014aab078

−20

−10

RLin, RLout, ISL

(dB)

−30

f (GHz)

0.92 0.960.950.93 0.94

014aab079

IP3O

(dBm)

(1)

(3)

(2)

Product data sheet Rev. 3 — 9 September 2010 24 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

See Table 18 for a list of components.

Fig 34. 3.3 V/130 mA application reference bo ard; 920 MHz to 960 MHz

GND

VCC

GND

n.c.

enable

GND

C4 C5C2 C3

MSL8MSL1 MSL3

MSL2 MSL7MSL6

MSL4

MSL5

J IHGFEDCBA 12345678910

RF in

RF out

014aab080

Table 18. 3.3 V/130 mA ap plication list of components; 920 MHz to 960 MHz

See Figure 29 and Figure 34 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;

copper plating thickness = 35

Component Description Value Function Remarks

C1, C6 capacitor 68 pF DC blocking Murata GRM1885C1H680JA01D

C2, C3 capacitor 3.3 pF input match Murat a GRM1885C1H3R3CZ01D

C4 cap acitor 3.9 pF output match Murata GRM1885C1H3R9CZ01D

C5 cap acitor 1.0 pF output match Murata GRM1885C1H1R0CZ01D

C7 cap acitor 68 pF RF decoupling Murata GRM1885C1H680JA01D

C8 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A

C9 cap acitor 10 μF DC decoupling AVX 1206ZG106ZAT2A

J1, J2 RF connector SMA Emerson Network Power

142-0701-841

J3 DC connector 6-pins MOLEX

L1 inductor 2.2 nH output match Tyco electronics 36501J2N2JTDG

L2 inductor 22 nH DC feed Tyco electronics 36501J022JTDG

MSL1[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm input match

MSL2[1] micro stripline 1.14 mm ×0.8 mm ×2.95 mm input match

MSL3[1] micro stripline 1.14 mm ×0.8 mm ×7.75 mm input match

MSL4[1] micro stripline 1.14 mm ×0.8 mm ×23.4 mm output match

MSL5[1] micro stripline 1.14 mm ×0.8 mm ×2.2 mm output match

Product data sheet Rev. 3 — 9 September 2010 25 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

[1] MSL1 to MSL8 dimensions specified as Width (W), Spacing (S) and Length (L).

12.2.2 2405 MHz to 2485 MHz

MSL6[1] micro stripline 1.14 mm ×0.8 mm ×2.4 mm output match

MSL7[1] micro stripline 1.14 mm ×0.8 mm ×2.3 mm output match

MSL8[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm output match

R1 resistor 0 ΩMulticomp MC 0.063W 0603 0R

R2 resistor (trimmer) 2 kΩbias adjustment Bourns 3214W-1-202E

Table 18. 3.3 V/130 mA ap plication list of components; 920 MHz to 960 MHz …continued

See Figure 29 and Figure 34 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;

copper plating thickness = 35

Component Description Value Function Remarks

See Table 19 for a list of components.

PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm

Fig 35. 3.3 V/130 mA application schematic; 2405 MHz to 2485 MHz

RF_OUT

C8 C6

ICQ_ADJ SHDN

enable

MSL1 MSL2 MSL4MSL3 MSL5

RF_IN

BGA7124

50 Ω50 Ω

014aab08

CC(BIAS)

CC(RF)

Product data sheet Rev. 3 — 9 September 2010 26 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

(1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 36. Ou tput power at 1 dB gain c om pr ession as a

function of frequency Fig 37. Power gain as a function of frequency

f (GHz)

2.405 2.4852.4652.425 2.445

014aab082

PL(1dB)

(dBm)

(3)

(1)

(2)

f (GHz)

2.405 2.4852.4652.425 2.445

014aab083

(dB)

(1)

(2)

(3)

Tcase = 25 °C. (1) Tcase = −40 °C.

(2) Tcase = 25 °C.

(3) Tcase = 85 °C.

Fig 38. Input return loss, outpu t return loss and

isolation as a function of frequency Fig 39. Output third-order intercept point as a function

of frequency

RLout

RLin

ISL

f (GHz)

2.405 2.4852.4652.425 2.445

014aab084

−20

−10

RLin, RLout, ISL

(dB)

−30

(2)

(1)

(3)

f (GHz)

2.405 2.4852.4652.425 2.445

014aab085

IP3O

(dBm)

Product data sheet Rev. 3 — 9 September 2010 27 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

See Table 19 for a list of components.

Fig 40. 3.3 V/130 mA application reference board; 2405 MHz to 2485 MHz

GND

VCC

GND

n.c.

enable

GND

C4C3C2

MSL5MSL4MSL1 MSL2 MSL3

J IHGFEDCBA 12345678910

RF in

RF out

014aab086

Table 19. 3.3 V/130 mA application list of components; 2405 MHz to 2485 MHz

See Figure 35 and Figure 40 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;

copper plating thickness = 35

Component Description Value Function Remarks

C1, C5 capacitor 12 pF DC blocking Murata GRM1885C1H120JA01D

C2 capacitor 2.2 pF input match Murata GRM1885C1H2R2CZ01D

C3 capacitor 0.82 pF output match Murata GRM1885C1HR82CZ01D

C4 capacitor 0.68 pF output match Murata GRM1885C1HR68CZ01D

C6 capacitor 12 pF RF decoupling Murata GRM1885C1H120JA01D

C7 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A

C8 capacitor 10 μF DC decoupling AVX 1206ZG106ZAT2A

J1, J2 RF connector SMA Emerson Network Power

142-0701-841

J3 DC connector 6-pins MOLEX

L1 inductor 22 nH DC feed Tyco electronics 36501J022JTDG

MSL1[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm input match

MSL2[1] micro stripline 1.14 mm ×0.8 mm ×10.8 mm input match

MSL3[1] micro stripline 1.14 mm ×0.8 mm ×7.3 mm output match

MSL4[1] micro stripline 1.14 mm ×0.8 mm ×4.3 mm output match

Product data sheet Rev. 3 — 9 September 2010 28 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

[1] MSL1 to MSL5 dimensions specified as Width (W), Spacing (S) and Length (L).

12.3 PCB stack

MSL5[1] micro stripline 1.14 mm ×0.8 mm ×10.95 mm output match

R1 resistor 2.2 ΩMulticomp MC 0.063W 0603 2R2

R2 resistor (trimmer) 2 kΩb ias adjustment Bourns 3214W-1-202E

Table 19. 3.3 V/130 mA application list of components; 2405 MHz to 2485 MHz …continued

See Figure 35 and Figure 40 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm;

copper plating thickness = 35

Component Description Value Function Remarks

(1) Pre-pregnated

RO4003Cdielectric constant εr = 3.38

Fig 41. PCB stack

through via

RF and analog ground

RF and analog routing

analog routing

RF and analog ground

35 μm (1 oz.) copper + 0.3 μm

gold plating

RO4003C, 0.51 mm (20 mil)

35 μm (1 oz.) copper

(1) 0.2 mm (8 mil)

FR4, 0.15 mm (6 mil)

35 μm (1 oz.) copper

014aab08

Product data sheet Rev. 3 — 9 September 2010 29 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

13. Package outline

Fig 42. Package outline SOT908-1 (HVSON8)

0.50.21 0.05

0.00

A1Eh

UNIT D(1) ye

1.5

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 3.1

2.9

1.65

1.35

3.1

2.9

2.25

1.95

0.3

0.2 0.05 0.1

DIMENSIONS (mm are the original dimensions)

SOT908-1 MO-229

E(1)

0.5

0.3

0.1

0.05

SOT908-1

VSON8: plastic thermal enhanced very thin small outline package; no leads;

terminals; body 3 x 3 x 0.85 mm

A(1)

max.

05-09-26

05-10-05

Note

1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.

terminal 1

index area

B A

detail X

exposed tie bar (4×)

terminal 1

index area

eAC B

C wM

0 1 2 mm

scale

Product data sheet Rev. 3 — 9 September 2010 30 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

14. Abbreviations

15. Revision history

Table 20. Abbreviations

Acronym Description

CPE Customer-Premi s es Eq uip m e nt

DC Direct Current

ESD ElectroStatic Discharge

HTOL High Temperatu re Operating Life

ISM Industrial, Scientific and Medical

MMIC Monolithic Microwave Integrated Circuit

MoCA Multimedia over Coax Alliance

RFID Radio Frequency IDentification

SMA SubMiniature version A

TX Transmit

WLAN Wireless Local Area Network

Table 21. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BGA7124 v.3 20100909 Product data sheet - BGA7124 v.2

Modifications: •Figure 5 on page 11: MSL symbols have been corrected.

•Figure 11 on page 14: MSL symbols have been corrected.

•Figure 17 on page 16: MSL symbols have been corrected.

•Figure 23 on page 19: MSL symbols have been corrected.

•Figure 29 on page 22: MSL symbols have been corrected.

•Figure 35 on page 25: MSL symbols have been corrected.

BGA7124 v.2 20100623 Product data sheet - BGA7124 v.1

BGA7124 v.1 20100421 Product data sheet - -

Product data sheet Rev. 3 — 9 September 2010 31 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

16. Legal information

16.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

16.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, th e

full data sheet shall pre va il.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

16.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregat e and cumulative liabil ity towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document cont ains the product specification.

Product data sheet Rev. 3 — 9 September 2010 32 of 33

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omotive use. It i s neither qua lified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such au tomotive applications, use and specificatio ns, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product cl aims resulting from custome r design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

16.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

17. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BGA7124

400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 9 September 2010

Document identifier: BGA7124

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

18. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3

5 Shutdown control . . . . . . . . . . . . . . . . . . . . . . . 3

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Thermal characteristics . . . . . . . . . . . . . . . . . . 5

8 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5

8.1 Supply current adjustment . . . . . . . . . . . . . . . . 5

9 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6

9.1 Scattering parameters . . . . . . . . . . . . . . . . . . . 9

10 Reliability information. . . . . . . . . . . . . . . . . . . 10

11 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 10

12 Application information. . . . . . . . . . . . . . . . . . 11

12.1 5 V applications . . . . . . . . . . . . . . . . . . . . . . . 11

12.1.1 920 MHz to 960 MHz . . . . . . . . . . . . . . . . . . . 11

12.1.2 1930 MHz to 1990 MHz . . . . . . . . . . . . . . . . . 14

12.1.3 2110 MHz to 2170 MHz . . . . . . . . . . . . . . . . . 16

12.1.4 2405 MHz to 2485 MHz . . . . . . . . . . . . . . . . . 19

12.2 3.3 V applications . . . . . . . . . . . . . . . . . . . . . . 22

12.2.1 920 MHz to 960 MHz . . . . . . . . . . . . . . . . . . . 22

12.2.2 2405 MHz to 2485 MHz . . . . . . . . . . . . . . . . . 25

12.3 PCB stack. . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 29

14 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 30

15 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 30

16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 31

16.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 31

16.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

16.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 31

16.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 32

17 Contact information. . . . . . . . . . . . . . . . . . . . . 32

18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Mouser Electronics

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