SMBTA56/ MMBTA56 PNP Silicon AF Transistor 3 * High breakdown voltage * Low collector-emitter saturation voltage * Complementary type: SMBTA06 / MMBTA06(NPN) 2 1 Type SMBTA56/ MMBTA56 Marking s2G Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 80 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 4 Collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 330 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 500 1 Unit V mA A mA TS 79C -65 ... 150 Value 215 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-18-2004 SMBTA56/ MMBTA56 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 80 V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 80 - - V(BR)EBO 4 - - IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current A I CBO VCB = 80 V, IE = 0 - - 0.1 VCB = 80 V, IE = 0 , TA = 150 C - - 20 - - 0.1 Collector-emitter cutoff current I CEO VCE = 60 V, IB = 0 DC current gain1) - h FE IC = 10 mA, VCE = 1 V 100 - - IC = 100 mA, V CE = 1 V 100 - - VCEsat - - 0.25 VBE(ON) - - 1.2 fT - 100 - MHz Ccb - 12 - pF Collector-emitter saturation voltage1) V IC = 100 mA, IB = 10 mA Base-emitter voltage1) IC = 100 mA, V CE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300s; D < 2% 2 Feb-18-2004 SMBTA56/ MMBTA56 DC current gain hFE = (IC) VCE = 1 V Collector-emitter saturation voltage IC = (VCEsat), hFE = 10 EHP00852 10 3 EHP00850 10 3 mA C h FE 100 C 25 C -50C 100 C 10 2 25 C 10 2 5 -50 C 10 1 10 1 5 10 0 -1 10 10 0 10 1 10 2 mA 10 10 0 3 0.0 0.5 V C V CEsat Base-emitter saturation voltage Collector current I C = (V BE) IC = (V BEsat), hFE = 10 VCE = 1V EHP00849 10 3 mA mA 100 C 25 C -50 C 10 2 10 2 5 10 1 10 1 5 5 10 0 10 0 5 5 0 0.5 1.0 V 100 C 25 C -50 C C 5 10 -1 EHP00846 10 3 C 1.0 10 -1 1.5 0 0.5 V 1.0 1.5 V BE V BEsat 3 Feb-18-2004 SMBTA56/ MMBTA56 Collector cutoff current ICBO = (TA) VCB = 80 V Transition frequency fT = (IC) VCE = 5 V fT CBO max 10 3 5 EHP00848 10 3 MHz EHP00851 10 4 nA 10 2 5 5 10 2 typ 10 1 5 5 10 0 5 10 1 10 0 10 -1 0 50 C 150 100 5 10 1 5 10 2 mA 10 3 C TA Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 360 mW K/W 300 10 2 RthJS Ptot 270 240 210 10 1 180 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 120 10 0 90 60 30 0 0 15 30 45 60 75 90 105 120 C TS 10 -1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Feb-18-2004 SMBTA56/ MMBTA56 Permissible Pulse Load Ptotmax/P totDC = (tp) Ptotmax/ P totDC 10 4 10 3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Feb-18-2004