Feb-18-2004
1
SMBTA56/ MMBTA56
1
2
3
VPS05161
PNP Silicon AF Transistor
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: SMBTA06 / MMBTA06(NPN
)
Type Marking Pin Configuration Package
SMBTA56/ MMBTA56 s2G 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 80 V
Collector-base voltage VCBO 80
Emitter-base voltage VEBO 4
Collector current IC500 mA
Peak collector current ICM 1 A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS ≤ 79°C
Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 215 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
Feb-18-2004
2
SMBTA56/ MMBTA56
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 80 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 80 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 4 - -
Collector-base cutoff current
VCB = 80 V, IE = 0
VCB = 80 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Collector-emitter cutoff current
VCE = 60 V, IB = 0
ICEO - - 0.1
DC current gain1)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
100
100
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
VCEsat - - 0.25 V
Base-emitter voltage1)
IC = 100 mA, VCE = 1 V
VBE(ON) - - 1.2
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT- 100 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 12 - pF
1Pulse test: t < 300µs; D < 2%
Feb-18-2004
3
SMBTA56/ MMBTA56
DC current gain hFE = ƒ(IC)
VCE = 1 V
EHP00852
10
h
C
FE
101
10
-1 0
Ι
100 C
25 C
-50 C
1
10 2
10 3
10
mA
2
10
3
10
0
10
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0.0
10
EHP00850
CEsat
V
0
3
10
Ι
C
mA
1
10
2
10
C
5
5
100
25 C
-50C
0.5 V 1.0
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
EHP00849
10
0V
BEsat
1.5
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
mA
5
10
2
100 ˚C
25 ˚C
-50 ˚C
Collector current IC = ƒ(VBE)
VCE = 1V
EHP00846
10
0V
BE
1.5
C
10
3
1
10-1
5
0.5 1.0
100
5
Ι
V
mA
5
102
100 C
25 C
-50 C
Feb-18-2004
4
SMBTA56/ MMBTA56
Collector cutoff current ICBO = ƒ(TA)
VCB = 80 V
EHP00851
10
0C
A
150
nA
CBO
10
4
1
10-1
5
50 100
5
102
100
5
Ι
T
max
typ
5
103
Transition frequency fT = ƒ(IC)
VCE = 5 V
10
EHP00848
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
Ι
55
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Feb-18-2004
5
SMBTA56/ MMBTA56
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
4
10
Ptotmax/ PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
