2N3663
Discrete POWER & Signal
Technologies
NPN RF Transistor
2N3663
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 12 V
VCBO Collector- Bas e Voltage 30 V
VEBO Emitt er-Base Voltage 3.0 V
ICCollector Current - Continuous 50 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N3663
PDTotal Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
RθJC Thermal Resistance, J unction to Case 125 °C/W
RθJA Thermal Resistance, J unction to Ambient 357 °C/W
ECB
TO-92
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43. See PN918 for characteristics.
© 1997 Fairchild Semiconductor Corporation
2N3663
NPN RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR) CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 12 V
V(BR) CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 30 V
V(BR)EBO Emitt er-Base Breakdown Voltage IE = 100 µA, IC = 0 3.0 V
ICBO Collector-Cutoff Current VCB = 15 V, IE = 0 0.5 µA
IEBO Emitter-Cutoff Current VEB = 2.0 V, I C = 0 0.5 µA
ON CHARACTERISTICS*
hFE DC Current Gain VCE = 10 V, IC = 8.0 mA 20
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 5.0 mA, VCE = 10 V,
f = 100 MHz
700 2100 MHz
Cob Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.8 1.7 pF
rb’CCCollector Base Time Constant IC = 8. 0 mA, VCE = 10 V,
f = 79.8 MHz
80 pS
FUNCTIONAL TEST
NF Noise Figure IC = 1.0 mA, VCE = 6.0 V,
f = 60 MHz, Rg = 400 Ω
6.5 dB
Gpe Amplifier Power Gain IC = 6.0 mA, VCE = 12 V,
f = 200 MHz
1.5 dB
