S10201-04 - Hamamatsu Photonics K.K.

TDI-CCD image sensors

Operating the back-thinned CCD in TDI mode

delivers high sensitivity.

S10201-04S10200-02 S10202-08 S10202-16

www.hamamatsu.com 1

Sequential imaging of high-speed moving samples

Semiconductor inspection

TDI mode gives high sensitivity

Inspection tasks on electronic parts production line

Flow cytometery

High-speed, continuous image acquisition

Back-thinned structure ensures high sensitivity from UV

to near IR

Multiple ports for high-speed line rate

TDI-CCD image sensers capture clear and bright images even under low-light-level conditions. During TDI (time delay in-

tegration) mode, the CCD captures an image of a moving object while transferring integrated signal charges synchronously

with the object movement. This operation mode dramatically boosts sensitivity to high levels even when capturing fast mov-

ing objects. Our new TDI-CCD uses the back-thinned structure to achieve even higher quantum efﬁ ciency over a wide spec-

tral range from UV to near IR region (200 to 1100 nm).

Schematic diagram showing integrated

exposure by TDI mode

TDI mode

In FFT-CCD, signal charges in each line are vertically transferred during charge readout. TDI mode synchronizes this vertical

transfer timing with the movement of the object, so that signal charges are integrated a number of times equal to the number

of vertical stages of the CCD pixels.

In the TDI mode, the signal charges must be transferred in the same direction at the same speed as those of the object to be

imaged. These speeds are expressed by the following equation:

v = f × d

v : object moving speed, charge transfer speed

f : vertical transfer frequency

d : pixel size

In the right ﬁ gure, when the ﬁ rst stage charges are transferred

to the second stage, an additional charges are produced in the

second stage by photoelectric conversion and accumulated.

When this operation is continuously repeated until reaching

the last stage M (the number of vertical stages), signal charges

which are M times greater than the initial charges are accumu-

lated. Since the signal charges on each line are output from the

CCD horizontal shift register, a two-dimensional image can be

continuously acquired. In this way the TDI mode achieves sen-

sitivity which is M times higher than linear image sensors (S/N

is improved times). The TDI mode also improves sensitivity

variations compared to frame mode operation.

Time1 Time2 Time3

First stage

Last stage M

Charge transfer

Object movement

Charge

KMPDC0139EA

Features Applications

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

Selection guide

Type no.

Number of

total pixels

(H × V)

Number of

effective pixels

(H × V)

Number of

ports

Pixel rate

(MHz/port)

Line rate

(kHz)

Vertical

transfer

Applicable*1

camera

S10200-02 1040 × 128 1024 × 128 2

30 50 Bi-directional

S10201-04 2080 × 128 2048 × 128 4 C10000-201

S10202-08 4160 × 128 4096 × 128 8 -

S10202-16 4224 × 128 4096 × 128 16 100 C10000-701A/-701B

*1: The C10000 series cameras are products manufactured by Hamamatsu Photonics, System Division (refer to page 15).

Structure

Parameter Specification

Pixel size (H × V) 12 × 12 μm

TDI stage 128

Anti-blooming FW × 100 (min.)

Vertical clock 3 phases

Horizontal clock 2 phases

Output circuit Two-stage MOSFET source follower

Package Ceramic DIP (refer to dimensional outlines)

Window Quartz glass*2

*2: Resin sealing

Parameter Symbol Min. Typ. Max. Unit

Operating temperature*3Topr -50 - 60 °C

Storage temperature Tstg -50 - 70 °C

Output transistor drain voltage VOD -0.5 - 25 V

Reset drain voltage VRD -0.5 - 18 V

Overflow drain voltage VOFD -0.5 - 18 V

Overflow gate voltage VOFG -10 - 15 V

Summing gate voltage VSG -10 - 15 V

Output gate voltage VOG -10 - 15 V

Reset gate voltage VRG -10 - 15 V

Transfer gate voltage VTG -10 - 15 V

Vertical clock voltage VP1V, VP2V, VP3V -8 - +8 V

Horizontal clock voltage VP1H, VP2H -10 - 15 V

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

*3: Chip temperature

Parameter Symbol Min. Typ. Max. Unit

Output transistor drain voltage VOD 12 15 18 V

Reset drain voltage VRD 11 12 13 V

Output gate voltage VOG 357V

Substrate voltage VDGND, VAGND -0-V

Overflow drain voltage VOFD 8 9 11 V

Overflow gate voltage VOFG 567V

Vertical shift register clock voltage High VP1VH, VP2VH, VP3VH 468

Low VP1VL, VP2VL, VP3VL -6 -5 -4

Horizontal shift register clock voltage High VP1HH, VP2HH 468

Low VP1HL, VP2HL -6 -5 -4

Summing gate voltage High VSGH 468

Low VSHL -6 -5 -4

Reset gate voltage High VRGH 789

Low VRGL -6 0 -

Transfer gate voltage High VTGH 468

Low VTGL -6 -5 -4

External load resistance RL2.0 2.2 2.4 kΩ

Absolute maximum ratings (Ta=25 °C)

Operating conditions (TDI mode, Ta=25 °C)

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

Parameter Symbol Min. Typ. Max. Unit

Signal output frequency fc - 30 35 MHz

Vertical shift register

capacitance

S10200-02

CP1V, CP2V, CP3V

- 250 -

pFS10201-04 - 400 -

S10202-08/-16 - 650 -

Line rate

S10200-02

-50-

kHz

S10201-04 - 50 -

S10202-08 - 50 -

S10202-16 - 100 -

Horizontal shift register

capacitance

S10200-02

CP1H, CP2H

-50-

pFS10201-04 - 90 -

S10202-08/-16 - 90 -

Transfer gate capacitance

S10200-02

CTG

-40-

pFS10201-04 - 60 -

S10202-08/-16 - 100 -

Summing gate capacitance

S10200-02

CSG

-20-

pFS10201-04 - 40 -

S10202-08/-16 - 40 -

Reset gate capacitance

S10200-02

CRG

-20-

pFS10201-04 - 40 -

S10202-08/-16 - 40 -

Charge transfer efficiency*4CTE 0.99995 0.99999 - -

DC output level*5Vout - 7.5 - V

Output impedance*6Zo - 300 - Ω

Output MOSFET supply current/node Ido - 5 10 mA

Power consumption*5 *6P - 75 - mW

*4: Charge transfer efficiency per pixel, measured at half of the full well capacity

*5: The values depend on the load resistance. (VOD=15 V, Load resistance=2.2 kΩ)

*6: Power consumption of the on-chip amplifier plus load resistance

Electrical characteristics (Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Saturation output voltage Vsat - FW × Sv - V

Full well capacity*7FW 80 100 120 ke-

CCD node sensitivity Sv 3 3.5 4 μV/e-

Dark current*7 *8DS - 100 300 e-/pixel

Readout noise*9Nr - 100 200 e- rms

Dynamic range DR 800 1000 - -

Photoresponse nonuniformity*10 PRNU - ±3 ±10 %

Spectral response range λ- 200 to 1100 - nm

*7: TDI mode

*8: Line rate 50 kHz, accumulated dark signal after 128-stage transfer

*9: Readout frequency 30 MHz

*10: Measured at half of the full well capacity, using LED light (peak emission wavelength: 660 nm), in TDI mode

Fixed pattern noise (peak to peak)

Signal × 100

[%]Photoresponse nonuniformity (PRNU) =

Electrical and optical characteristics (Ta=25 °C)

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

Spectral response (without window)*11

KMPDB0268EA KMPDB0269EA

Wavelength (nm)

Photosensitivity (V/µJ · cm2)

500

1000

1500

2000

2500

200 400 600 900800 1000300 500 700 1100

3000 (Typ. Ta=25 °C)

Wavelength (nm)

Quantum efficiency (%)

200 300 400 500 600 700 800 900 1000 1100 1200

100 (Typ. Ta=25 °C)

Back-thinned CCD

S10200-02

S10201-04

S10202-08

S10202-16

Front-illuminated CCD

*11: Spectral response with sapphire window is decreased according to the spectral transmittance characteristics of window material.

Spectral transmittance characteristics of window material

KMPDB0303EA

Wavelength (nm)

(Typ. Ta=25 °C)

Transmittance (%)

100

1200

100 300 400200 500 600 700 800 900

1000 1100

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

TGb

P3V

P2V

P1V

TGa

AGND

P2H

P1H

OSa1

OSa2

OSb1

OSb2

OFD

OFG

DGND

B port side

512 pixels

A port side

Bidirectional transfer

128 pixels

Sensor structure

KAPDC0251EA

S10200-02

TGb

P3V

P2V

P1V

TGa

AGND

P2H

P1H

OSa1

OSa2

OSb1

OSb2

OSa3 OSb3

OSa4 OSb4

OFD

OFG

DGND

B port side

512 pixels

A port side

Bidirectional transfer

128 pixels

KMPDC0260EA

S10201-04

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

TGb

P3V

P2V

P1V

TGa

AGND

P2H

P1H

OSa1

OSa2

OSb1

OSb2

OSa3 OSb3

OSa4 OSb4

OFD

OFG

DGND

B port side

512 pixels

A port side

OSa5 OSb5

OSa8 OSb8

Bidirectional transfer

128 pixels

KMPDC0261EA

S10202-08

TGb

P3V

P2V

P1V

TGa

AGND

P2H

P1H

OSa1

OSa2

OSb1

OSb2

OSa3 OSb3

OSa4 OSb4

OFD

OFG

DGND

B port side

256 pixels

A port side

OSa5 OSb5

OSa16 OSb16

OSa6 OSb6

OSa7 OSb7

OSa8 OSb8

OSa9 OSb9

OSa15 OSb15

Bidirectional

transfer

128 pixels

KMPDC0262EA

S10202-16

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

OSb6

OSb7

OSb8

OSa6

OSa7

OSa8

Thinning

V=128

H=512 × 8 (number of ports)

Thinning

OSa1

OSa2

OSa3

OSb1

OSb2

OSb3

8 blank pixels

512 pixels

128 TDI stages

KMPDC0252EA

Device structure (typical example: S10202-08, conceptual drawing of top view)

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

KMPDC0253ED

OSb

RGb H

P2Hb, SGb

P1Hb

TGb

P1V

P2V

P3V

TGa

P1Ha

P2Ha, SGa

RGa

OSa

S510

S254

S511

S255

Tprr, Tpwr, Tpfr

D2 D3..D8, S1..S509

D3..D8, S1..S253

S512 : S10200-02, S10201-04, S10202-08

S256 : S10202-16

Tprs, Tpws, Tpfs

Tprh, Tpwh, TpfhTovr

518

262

519

263

520

264

S10200-02, S10201-04, S10202-08:

S10202-16: 1 2 3

4..517

4..261

TovrvTprv, Tpwv, Tpfv

Tovrv

KMPDC0253ED

Timing chart

B port side readout

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

OSb

RGb

P2Hb, SGb

P1Hb

TGb

P1V

P2V

P3V

TGa

P1Ha

P2Ha, SGa

RGa

OSa

S510

S254

S511

S255

D1 D2 D3..D8, S1..S509

D3..D8, S1..S253

S512 : S10200-02, S10201-04, S10202-08

S256 : S10202-16

518

262

519

263

520 : S10200-02, S10201-04, S10202-08

264 : S10202-16

4..517

4..261

123

KMPDC0254ED

Parameter Symbol Min. Typ. Max. Unit

P1V, 2V, 3V, TG

Pulse width Tpwv 120 770 - ns

Rise and fall times Tprv, Tpfv 2 10 - ns

Overlap time Tovrv 30 300 - ns

P1H, P2H

Pulse width*12 Tpwh 14.5 16.5 - ns

Rise and fall times*12 Tprh, Tpfh 3 6 - ns

Duty ratio*12 --50-%

Pulse width Tpws 14.5 16.5 - ns

Rise and fall times Tprs, Tpfs 2 4 - ns

Duty ratio - - 50 - %

RG Pulse width Tpwr 5 6 - ns

Rise and fall times Tprr, Tpfr 1 2 - ns

TG - P1H Overlap time Tovr 30 1000 - ns

*12: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.

A port side readout

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

* Distance from upper surface of window to photosensitive surface

Photosensitive area 12.288

23.84 ± 0.1

0.457 ± 0.05 1.27 ± 0.1

27.94 ± 0.33

30.48 ± 0.35

40 21

Index mark 20

10.16 ± 0.25

3 ± 0.1

9.91 ± 0.25

2.5 ± 0.1

Photosensitive area 1.536

3.44 ± 0.35

1.48 ± 0.15 *

0.25+0.05

-0.03

2.84 ± 0.3

C0.5

9.66 ± 0.1

KMPDA0218EC

S10200-02

* Distance from upper surface of window to photosensitive surface

Photosensitive area 24.576

33 ± 0.1

0.457 ± 0.05 1.27 ± 0.1

38.1 ± 0.43

40.64 ± 0.45

40 21

Index mark

10.16 ± 0.25

3 ± 0.1

9.66 ± 0.1

9.91 ± 0.25

2.5 ± 0.1

Photosensitive area 1.536

3.44 ± 0.35

1.48 ± 0.15 *

0.25+0.05

-0.03

2.84 ± 0.3

C0.5

KMPDA0219EC

S10201-04

Dimensional outlines (unit: mm)

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

* Distance from upper surface of window to photosensitive surface

Photosensitive area 49.152

100 51

55 ± 0.1

63.5 ± 0.64

66.04 ± 0.66

9.91 ± 0.25

6.5 ± 0.1

2.5 ± 0.25

Photosensitive area 1.536

Index mark

3 ± 0.3

0.42 ± 0.251.27 ± 0.13

0.8 ± 0.05

2.42 ± 0.2 *

2.4 ± 0.24

3.8 ± 0.38

0.25+0.05

-0.03

10.16

0.25

C0.5

KMPDA0220EC

S10202-08/-16

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

S10200-02 S10201-04

Pin no.

Symbol Function Remark

Pin no.

Symbol Function Remark

1 P2V CCD vertical register clock-2 1 P2V CCD vertical register clock-2

2 P3V CCD vertical register clock-3 2 P3V CCD vertical register clock-3

3 P1V CCD vertical register clock-1 3 P1V CCD vertical register clock-1

4 TGa Transfer gate-a 4 TGa Transfer gate-a

5 SSD Digital GND GND 5 SSD Digital GND GND

6 NC No connection 6 OSa1 Output transistor source-a1 RL=2.2 kΩ

7 SSA Analog GND GND 7 SSA Analog GND GND

8 OSa1 Output transistor source-a 1 RL=2.2 kΩ8 OSa2 Output transistor source-a2 RL=2.2 kΩ

9 OD1 Output drain-1 +15 V 9 OD1 Output drain-1 +15 V

10 OSa2 Output transistor source-a 2 RL=2.2 kΩ10 OSa3 Output transistor source-a3 RL=2.2 kΩ

11 NC No connection 11 OD3 Output drain-3 +15 V

12 NC No connection 12 OSa4 Output transistor source-a4 RL=2.2 kΩ

13 OG Output gate +5 V 13 OG Output gate +5 V

14 RD Reset drain +12 V 14 RD Reset drain +12 V

15 OFD Overflow drain +9 V 15 OFD Overflow drain +9 V

16 SSD Digital GND GND 16 SSD Digital GND GND

17 RGa Reset gate-a 17 RGa Reset gate-a

18 SGa Summing gate-a 18 SGa Summing gate-a

19 P1Ha CCD horizontal register-a clock-1 19 P1Ha CCD horizontal register-a clock-1

20 P2Ha CCD horizontal register-a clock-2 20 P2Ha CCD horizontal register-a clock-2

21 P2Hb CCD horizontal register-b clock-2 21 P2Hb CCD horizontal register-b clock-2

22 P1Hb CCD horizontal register-b clock-1 22 P1Hb CCD horizontal register-b clock-1

23 SGb Summing gate-b 23 SGb Summing gate-b

24 RGb Reset gate-b 24 RGb Reset gate-b

25 SSD Digital GND GND 25 SSD Digital GND GND

26 OFG Overflow gate +6 V 26 OFG Overflow gate +6 V

27 RD Reset drain +12 V 27 RD Reset drain +12 V

28 OG Output gate +5 V 28 OG Output gate +5 V

29 NC No connection 29 OSb4 Output transistor source-b4 RL=2.2 kΩ

30 NC No connection 30 OD4 Output drain-4 +15 V

31 OSb2 Output transistor source-b2 RL=2.2 kΩ31 OSb3 Output transistor source-b3 RL=2.2 kΩ

32 OD2 Output drain-2 +15 V 32 OD2 Output drain-2 +15 V

33 OSb1 Output transistor source-b1 RL=2.2 kΩ33 OSb2 Output transistor source-b2 RL=2.2 kΩ

34 SSA Analog GND GND 34 SSA Analog GND GND

35 NC No connection 35 OSb1 Output transistor source-b1 RL=2.2 kΩ

36 SSD Digital GND GND 36 SSD Digital GND GND

37 TGb Transfer gate-b 37 TGb Transfer gate-b

38 P1V CCD vertical register clock-1 38 P1V CCD vertical register clock-1

39 P3V CCD vertical register clock-3 39 P3V CCD vertical register clock-3

40 P2V CCD vertical register clock-2 40 P2V CCD vertical register clock-2

Pin connections

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

S10202-08

Pin no.

Symbol Function Remark

Pin no.

Symbol Function Remark

1 P1Ha1 CCD horizontal register-a1 clock-1 51 P1Hb2 CCD horizontal register-b2 clock-1

2 P2Ha1 CCD horizontal register-a1 clock-2 52 P2Hb2 CCD horizontal register-b2 clock-2

3 SGa1 Summing gate-a1 53 SGb2 Summing gate-b2

4 RGa1 Reset gate-a1 54 RGb2 Reset gate-b2

5 SSD Digital GND GND 55 SSD Digital GND GND

6 SSA Analog GND GND 56 SSA Analog GND GND

7 OFG Overflow gate +6 V 57 OFG Overflow gate +6 V

8 OSa1 Output transistor source-a1 RL=2.2 kΩ58 NC No connection

9 OFD Overflow drain +9 V 59 OFD Overflow drain +9 V

10 NC No connection 60 OSb8 Output transistor source-b8 RL=2.2 kΩ

11 RD Reset drain +12 V 61 RD Reset drain +12 V

12 OSa2 Output transistor source-a2 RL=2.2 kΩ62 NC No connection

13 OG Output gate +5 V 63 OG Output gate +5 V

14 NC No connection 64 OSb7 Output transistor source-b7 RL=2.2 kΩ

15 OD1 Output drain-1 +15 V 65 NC No connection

16 OSa3 Output transistor source-a3 RL=2.2 kΩ66 NC No connection

17 NC No connection 67 OD8 Output drain-8 +15 V

18 NC No connection 68 OSb6 Output transistor source-b6 RL=2.2 kΩ

19 OD3 Output drain-3 +15 V 69 NC No connection

20 OSa4 Output transistor source-a4 RL=2.2 kΩ70 NC No connection

21 NC No connection 71 OD6 Output drain-6 +15 V

22 NC No connection 72 OSb5 Output transistor source-b5 RL=2.2 kΩ

23 SSD Digital GND GND 73 SSD Digital GND GND

24 TGa Transfer gate-a 74 P1V CCD vertical register clock-1

25 P2V CCD vertical register clock-2 75 P3V CCD vertical register clock-3

26 P3V CCD vertical register clock-3 76 P2V CCD vertical register clock-2

27 P1V CCD vertical register clock-1 77 TGb Transfer gate-b

28 SSD Digital GND GND 78 SSD Digital GND GND

29 OSa5 Output transistor source-a5 RL=2.2 kΩ79 NC No connection

30 OD5 Output drain-5 +15 V 80 NC No connection

31 NC No connection 81 OSb4 Output transistor source-b4 RL=2.2 kΩ

32 NC No connection 82 OD4 Output drain-4 +15 V

33 OSa6 Output transistor source-a6 RL=2.2 kΩ83 NC No connection

34 OD7 Output drain-7 +15 V 84 NC No connection

35 NC No connection 85 OSb3 Output transistor source-b3 RL=2.2 kΩ

36 NC No connection 86 OD2 Output drain-2 +15 V

37 OSa7 Output transistor source-a7 RL=2.2 kΩ87 NC No connection

38 OG Output gate +5 V 88 OG Output gate +5 V

39 NC No connection 89 OSb2 Output transistor source-b2 RL=2.2 kΩ

40 RD Reset drain +12 V 90 RD Reset drain +12 V

41 OSa8 Output transistor source-a8 RL=2.2 kΩ91 NC No connection

42 OFD Overflow drain +9 V 92 OFD Overflow drain +9 V

43 NC No connection 93 OSb1 Output transistor source-b1 RL=2.2 kΩ

44 OFG Overflow gate +6 V 94 OFG Overflow gate +6 V

45 SSA Analog GND GND 95 SSA Analog GND GND

46 SSD Digital GND GND 96 SSD Digital GND GND

47 RGa2 Reset gate-a2 97 RGb1 Reset gate-b1

48 SGa2 Summing gate-a2 98 SGb1 Summing gate-b1

49 P2Ha2 CCD horizontal register-a2 clock-2 99 P2Hb1 CCD horizontal register-b1 clock-2

50 P1Ha2 CCD horizontal register-a2 clock-1 100 P1Hb1 CCD horizontal register-b1 clock-1

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

S10202-16

Pin no.

Symbol Function Remark

Pin no.

Symbol Function Remark

1 P1Ha1 CCD horizontal register-a1 clock-1 51 P1Hb2 CCD horizontal register-b2 clock-1

2 P2Ha1 CCD horizontal register-a1 clock-2 52 P2Hb2 CCD horizontal register-b2 clock-2

3 SGa1 Summing gate-a1 53 SGb2 Summing gate-b2

4 RGa1 Reset gate-a1 54 RGb2 Reset gate-b2

5 SSD Digital GND GND 55 SSD Digital GND GND

6 SSA Analog GND GND 56 SSA Analog GND GND

7 OFG Overflow gate +6 V 57 OFG Overflow gate +6 V

8 OSa1 Output transistor source-a1 RL=2.2 kΩ58 OSb16 Output transistor source-b16 RL=2.2 kΩ

9 OFD Overflow drain +9 V 59 OFD Overflow drain +9 V

10 OSa2 Output transistor source-a2 RL=2.2 kΩ60 OSb15 Output transistor source-b15 RL=2.2 kΩ

11 RD Reset drain +12 V 61 RD Reset drain +12 V

12 OSa3 Output transistor source-a3 RL=2.2 kΩ62 OSb14 Output transistor source-b14 RL=2.2 kΩ

13 OG Output gate +5 V 63 OG Output gate +5 V

14 OSa4 Output transistor source-a4 RL=2.2 kΩ64 OSb13 Output transistor source-b13 RL=2.2 kΩ

15 OD1 Output drain-1 +15 V 65 OD16 Output drain-16 +15 V

16 OSa5 Output transistor source-a5 RL=2.2 kΩ66 OSb12 Output transistor source-b12 RL=2.2 kΩ

17 OD2 Output drain-2 +15 V 67 OD15 Output drain-15 +15 V

18 OSa6 Output transistor source-a6 RL=2.2 kΩ68 OSb11 Output transistor source-b11 RL=2.2 kΩ

19 OD5 Output drain-5 +15 V 69 OD12 Output drain-12 +15 V

20 OSa7 Output transistor source-a7 RL=2.2 kΩ70 OSb10 Output transistor source-b10 RL=2.2 kΩ

21 OD6 Output drain-6 +15 V 71 OD11 Output drain-11 +15 V

22 OSa8 Output transistor source-a8 RL=2.2 kΩ72 OSb9 Output transistor source-b9 RL=2.2 kΩ

23 SSD Digital GND GND 73 SSD Digital GND GND

24 TGa Transfer gate-a 74 P1V CCD vertical register clock-1

25 P2V CCD vertical register clock-2 75 P3V CCD vertical register clock-3

26 P3V CCD vertical register clock-3 76 P2V CCD vertical register clock-2

27 P1V CCD vertical register clock-1 77 TGb Transfer gate-b

28 SSD Digital GND GND 78 SSD Digital GND GND

29 OSa9 Output transistor source-a9 RL=2.2 kΩ79 OSb8 Output transistor source-b8 RL=2.2 kΩ

30 OD9 Output drain-9 +15 V 80 OD8 Output drain-8 +15 V

31 OSa10 Output transistor source-a10 RL=2.2 kΩ81 OSb7 Output transistor source-b7 RL=2.2 kΩ

32 OD10 Output drain-10 +15 V 82 OD7 Output drain-7 +15 V

33 OSa11 Output transistor source-a11 RL=2.2 kΩ83 OSb6 Output transistor source-b6 RL=2.2 kΩ

34 OD13 Output drain-13 +15 V 84 OD4 Output drain-4 +15 V

35 OSa12 Output transistor source-a12 RL=2.2 kΩ85 OSb5 Output transistor source-b5 RL=2.2 kΩ

36 OD14 Output drain-14 +15 V 86 OD3 Output drain-3 +15 V

37 OSa13 Output transistor source-a13 RL=2.2 kΩ87 OSb4 Output transistor source-b4 RL=2.2 kΩ

38 OG Output gate +5 V 88 OG Output gate +5 V

39 OSa14 Output transistor source-a14 RL=2.2 kΩ89 OSb3 Output transistor source-b3 RL=2.2 kΩ

40 RD Reset drain +12 V 90 RD Reset drain +12 V

41 OSa15 Output transistor source-a15 RL=2.2 kΩ91 OSb2 Output transistor source-b2 RL=2.2 kΩ

42 OFD Overflow drain +9 V 92 OFD Overflow drain +9 V

43 OSa16 Output transistor source-a16 RL=2.2 kΩ93 OSb1 Output transistor source-b1 RL=2.2 kΩ

44 OFG Overflow gate +6 V 94 OFG Overflow gate +6 V

45 SSA Analog GND GND 95 SSA Analog GND GND

46 SSD Digital GND GND 96 SSD Digital GND GND

47 RGa2 Reset gate-a2 97 RGb1 Reset gate-b1

48 SGa2 Summing gate-a2 98 SGb1 Summing gate-b1

49 P2Ha2 CCD horizontal register-a2 clock-2 99 P2Hb1 CCD horizontal register-b1 clock-2

50 P1Ha2 CCD horizontal register-a2 clock-1 100 P1Hb1 CCD horizontal register-b1 clock-1

Cat. No. KMPD1098E06 Sept. 2012 DN

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact

us for the delivery specification sheet to check the latest information.

ype numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

he product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of September, 2012.

TDI-CCD image sensors

S10200-02, S10201-04, S10202-08, S10202-16

∙ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth

ring, in order to prevent electrostatic damage due to electrical charges from friction.

∙ Avoid directly placing these sensors on a work-desk, etc. that may carry an electrostatic charge.

∙ Provide ground lines or ground connection with the work-ﬂ oor, work-desk and work-bench to allow static electricity to discharge.

∙ Ground the tools used to handle these sensors, such as tweezers and soldering irons.

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of

damage that occurs.

Precautions (Electrostatic countermeasures)

The TDI camera C10000 series is useful in a wide range of imaging

applications that require both high speed and high sensitivity,

including in-line monitoring and inspection.

C10000-201 (Board type) C10000-701A/-701B

TDI camera C10000 series

Product information

http://jp.hamamatsu.com/products/camera/5007/index_en.html