Ol DEW sa7508, oo1vraao 2 Z FO 3875081 G E SOLID STATE ne OTE 17380 General-Purpose Power Transistors D 7 - 32-// 2N5294, 2N5296, 2N5298 File Number 322 Silicon N-P-N Transistors General-Purpose Types for Medium-Power Switching and Amplifier Applications Features: Low saturation voltage - Vce(sat) = 1 V max, at le = 0.5 A (2N5294) =1Vmax. atlo =1 A (2N5296) =1V max, at le = 1.5 A (2N5298) Maximum safe-area-of-operation curves specified for DC and pulse service . TERMINAL DESIGNATIONS RCA-2N5294, 2N5296, and 2N5298 are triple-diffused silicon n-p-n transistors. They are intended for a wide variety of 3 medium-power switching and amplifier applications such tC as series and shunt regulators, and in driver and output _t__,! = stages of high-fidelity amplifiers. (FLANGE) OC pa These plastic power transistors diffar in voltage ratings and in the currents at which the parameters are controlled, TOP VIEW B All types are supplied in the JEDEC TO-220AB 92S-a9969 (VERSAWATT) plastic package. JEDEC TO-220AB MAXIMUM RATINGS, Absolute-Maximum Values: 2N5204 2N5286 2N5298 *COLLECTOR-TO-BASE VOLTAGE....... ence nearer eeenesentectnneeieenes Vceo 80 60 80 Vv COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: With -1.5 volts (Vee) Of reverse DIAS oc seek c eect cece teen et en eeeees Veev(sus) 80 60 80 v With external base-to-emitter resistance (Ree) = 100..... , Veen(sus) 75 50 70 Vv With base open ..... Peace cere reese eee resent ereeeee eens Vceo(sus) 70 40 60 Vv "EMITTER-TO-BASE VOLTAGE 0... .. cece eee este reset eeeeeee es . Veeo 7 5 5 Vv "COLLECTOR CURRENT ou... cecsccecterseerenensaneeeearescreees sole 4 4 4 A BASE CURRENT...... olen b ener tne s ens ee ner ae seu eer essureussteunerseeanses le 2 2 2 A TRANSISTOR DISSIPATION, Pr At case temperatures up to 25C 36 36 36 Ww At case tamperatures above 26C Derate linearly at 0.288 WPGC or see Figs. 1&2 . At ambient tamperatures Up tO 25C oo... cece cece eee cecen rec ccaeenevenenes 18 18 7 18 w At ambient temperatures above 26C occ cece cet eer ete cern eee ren cereene eee Derate linearly at 0.0144 WPGC TEMPERATURE RANGE: Storage & Operating (JUNCTION) Co... cc cece recone ener ce netnrerneerenseguasaes ~ -65to +160 __ c LEAD TEMPERATURE (During Soldering): At distance = 1/8 In. (3.17 mm) trom case for 10S Max. ciseseeeesecctrvenees ____. 235 ____ C In accordance with JEDEG registration data. 384 0923 C-08Ol DE B247soa1 0017381 4 i 3875081 G E SOLID STATE OTE 17381 TER e~y | General-Purpose Power Transistors ut , 2N5294, 2N5296, 2N5298 ELECTRICAL CHARACTERISTICS, At Case Temperature ( Tc} = 25C, Unless Otherwise Specified. TEST CONDITIONS LIMITS oC . oc Emitter oc . Characteristic Symbol Collector | or Base | Current (A) | 2N5294 | 2N5296 | 2N52ag | Units . Voltage (V) Voltage (V) Vee | Ves] Vee | lo | Isp | Min] Max, (Min. | Max, | Min, | Max, 65 5 ~ }05}- , - | - $05 % 15 ~tf-]= 4), 2 ]-]- mA Collector-Cutoff Current kev With base-emitter junction : CS) 15 -/| 3 ]-]-]- 143 teverse biased bev , (Te = K0%)} 15 ~|}-]-][5 [-]|- [om 50 ~ 1/05 )- | - | - Jas Collector-Cutoff Current cer mA With extemal base-to-emitter 50 3 , i Ree) = 1009 CER - ~ 7 resistance (Rye) (Tg = 150C) mA po . i 7 - J - - . Emitter-Cutoff Current lepo 5 ~|-J-/4 1 | : 4 05 3; WW} - | - |=] - *! DC Forward-Current Transfer Ratio hee 4 1 - 90] 120] - | - 4 15 - - |- {0} & "1 Collector-to-Emitter Ol; 0 | 70 -[-]f-[- Sustaining Voltage Voeo(sus) Ol] o |e 40 -|- v With base open Or] O f=] = |=] - | ao] - With external base-to-emitt Ot err ati izds ith extemal base-to-emitter Vy 0.1 -~/-{/s;/-],2 4 - Vv tesistance (Ree) = 100.2 cer(sus) 0.1 -j-/[- - | 70] - : aber ica +15 [0.1 ej; -}]-f;-T- With base-emitter junction Vegy(sus) 15 {01 os a re a v feverse biased 15 [01 -/|-]/-]- | 4 05 - fllt-{-=-]- 4 - * | Base-to-Emitter Voltage VeeS 4 1 ~te- f= fis}. ] - v 4 15 ~ [= [- [- $15 0.5 | 0,05 | ~ Pd-f-7-]- Collector-to-Emitter Vog(sat) 1{/o0:]/- ]/- J- pf-]- v Saturation Voltage e 15 | 0.15 ~[-[-]-]1 Gain-Bandwidth Product fr 4 0.2 O08) - {O8} - |08] - | MHz Sat. Switching Time 0.5 [0.069 | - ]}-/[- f-] - Turn-On (See Figs, 22 - 24) lon Vee = 30 1] ory. |] - Je 5 -|- BS Lh ]01e}-- ] - |- f- -1 5 0.5 [-0.057] - | 1b | - | - ~/. Tumn-Off (See Figs. 22 - 24} tott Veg = 30 17 -Qiy- } - }- Fs] od bs 15 J-0ist| - | - {- | - | | 35 - Thermal Resistance . (Junction-to-Case) Bug ~ [35 [- [35 |] - $35 | cow (Junetion-to-AmbTent ) On - | ]- | 7) - [7 [ow By value (turn-on base current). b 'By value (turn-off base current). Pulsed, pulse duration = 300 ys, duty factor = .018, In accordance with JEDEC registration data. 385 09 24 c-09OL De 375081 cowzae o 3875081 GE SOLID STATE O1E 17382 DSS] / he General-Purpose Power Transistors '5N5294, 2N5296, 2N5298 a | CASE TEMPERATURE (Tc) # 25C g | (CURVES MUST BE DERATED LINEARLY WITH INCREASE i IN TEMPERATURE) 2 a Hey fF lok : + eter : hal 6 rs Ig MAX. PULSED iY PEI BS ine Tey ttt Toth spite Eonar q @ Te (MAX) CONTINUOUS Nat 3 ea : O o Q i i OQ a ? % 4, o By OEE e RD , i es a we 2 ef ON 0 6 4 EVcEO MAX. = 40 V (2N5296) i Fail 2 EHYcEO MAX =60V (2N5298) = CEQ MAK- 70 V (2N5294) Babp serps 1 2 4 6 BIO 2 4 6 8199 2 4 68 jo COLLECTOR- TO-EMITTER VOLTAGE (VcE)-V gecm~-402a2 Fig. 1 - Maximum operating areas for all types. PERCENTAGE OF RATED CURRENT AT SPECIFIED VOLTAGE FFECTIV P, OR CASE TEMP, EFFECTIVE CASE TEMP. OR CASE TEMP.(TerFORTC-C Fig. 2 - Derating curve for all types. To: 100 OC CURRENT GAIN hfe COMMON EMITTER Voe= SV 0.02 005 Ot 0.3 0.5 1 3 3 10 COLLECTOR CURRENT tg (A) 92C5~ag2as Fig. 3- Typical! OC beta characteristics for all types. 386 0925 C-10OL DE 3875081 0017383 2 i 3875081 G E SOLID STATE oe O1 17363 O T-S33-/! General-Purpose Power Transistors 2N5294, 2N5296, 2N5298 a0 COMMON EMITTER 0 Z o2sh voessv z 2 y & 2 0 z 20 5 : a * 3 5 S45 3 3 fa=10ma 5 8 g 10 9 a a 3 2 COMMON EMITTER o os 6 Te + are 0 02 Oa 06 oe 10 12 14 16 COLLECTOR-EMITTER VOLTAGE Vce_ () BASE-EMITTER VOLTAGE Vpe_ () 9205-40285 9205-40286 Fig. 4 - Typical input characteristics for all types. Fig. & - Typical output characteristics for all types, z 1 Qa me COMMON EMITTER S 5 = os teva = 10 ZF oe $3 a3 ze o a: = 3 (2) Te = asec Eg Bs z< ug ye oot 52 eg zs o> z 8 8 os g (1) WITHOUT HEAT SINK 3 0.03 (2) INFINITE HEAT $1RK 3 0.02 005 (04 03 05 1 3 5 19 " 3 2 1 COLLECTOR CURRENT Ic (A) to te to" 1 0 102 9205-40207 TIME 1 (tec) $2s- 40208 Fig. 6 - Typical collector-to-emitter saturation Fig. 7 - Transient thermal resistance voltage as a function of collector characteristics for all types. current lor all types. i fr STs 387