_30E D M 7929237 0030126 3 my 30 1( G7 SGS-THOMSON SG S-THOMSON ~ 7, incRoELEecrRomes BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM e DIE SIZE: 95 x95 mils Top Al Back Au/Cr/Ni/Au _ BACKSIDE THICKNESS: 6100 A 6 DIE THICKNESS: 16 + 2 mils * PASSIVATION: P-Vapox . BONDING PAD SIZE: Source 28 x 30 mils Vv R in* Gate 16x 18 mils bss DS (on) D RECOMMENDED WIRE BONDING: 50 V 0.1 2 14A Source Al - max 10 mils Gate Al - max 5 mils N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS ideal for high speed switching applications. Die geometry MC-0081 =~ ES SOURCE M@ GATE _ Drain on backside * With Ringe max. 3.1C/W June 1988 v2 647306 ) M& 7929237 0030027 5 a S$ G S=-THOMSON GUARANTEED PROBED ELECTRICAL CHARACTERISTICS (T,= 25C, Note 1) BUZ71 CHIP Parameters Test Conditions Min. | Typ. | Max. | Unit Vier) pss Drain-source lb= 250 pA Ves= 0 50 Vv breakdown voltage yo a, T-39-11 loss Zero gate voltage Vps= Max Rating 250 |} wA drain current Vos= Max Rating x 0.8 Tj= 125C 1000} nA lass Gate-body leakage Veg = +20 V 100 | nA current . Vas hy Gate threshold Vos = Ves Ip=1 mA 2.1 4 Vv voltage Rps (on) Static drain-source Veg= 10 V Ip=iA 0.1 Q on resistance NOTES: 1 - Due to probe testing limitations de parameters only are tested. They are measured using pulse techni- ques: pulse width <300 ys, duty cycle <2% 2 - For detailed device characteristics please refer to the discrete device datasheet 2/2 . 7 397, SES TONS 8