Data Sheet No. 2N4957 Generic Part Number: 2N4957 Type 2N4957 Geometry 0006 Polarity PNP Qual Level: JAN - JANS REF: MIL-PRF-19500/426 Features: * * * * Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a TO-72 case. Also available in chip form using the 0006 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/426 which Semicoa meets in all cases. TO-72 Maximum Ratings o TC = 25 C unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 30 V Emitter-Base Voltage VEBO 3.0 V Collector Current, Continuous IC 30 A Operating Junction Temperature TJ -65 to +200 o TSTG -65 to +200 o Storage Temperature C C Data Sheet No. 2N4957 Electrical Characteristics o TC = 25 C unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 A, IE = 0 Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 Emitter-Base Breakdown Voltage IE = 100 A, IC = 0 Collector-Base Cutoff Current o VCB = 20 V, IE 0, TC = +25 C Collector-Base Cutoff Current VCB = 20 V, IE 0, TC = +150oC ON Characteristics DC Current Gain IC = 0.5 mA, VCE = 10 V IC = 2.0 mA, VCE = 10 V IC = 5.0 mA, VCE = 10 V o IC = 5.0 mA, VCE = 10 V, TA = -55 C Small Signal Characteristics Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio VCE = 10 V, IE = 2.0 mA, f = 100 MHz Collector to Base Feedback Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Collector to Base Time Constant VCB = 10 V, IE = 2.0 mA, f = 63.6 MHz Common Emitter Small Signal Power Gain VCE = 10 V, IC = 2.0 mA, f = 450 MHz Symbol Min Max Unit V(BR)CBO 30 --- V V(BR)CEO 30 --- V V(BR)EBO 3.0 --- V ICBO1 --- 100 na ICBO2 --- 100 A Symbol Min Max Unit hFE1 hFE2 hFE3 hFE4 15 20 30 10 ----165 --- --------- Symbol Min Max Unit |hfe| 12 36 --- Ccb --- 0.8 pF rb'CC 1.0 8.0 ps GPE 17 25 dB