MMDJ-65609EV-40/883 - Atmel Corporation

Rev. 4158D–AERO–06/02

Features

•Operating Voltage: 3.3V

•Access Time: 40 ns

•Very Low Power Consumption

– Active: 180 mW (Max)

– Standby: 70 µW (Typ)

•Wide Temperature Range: -55°C to +125°C

•400 Mils Width Package

•TTL Compatible Inputs and Outputs

•Asynchronous

•Designedon0.35MicronProcess

•Latch-up Immune

•200 Krads capability

•SEU LET Better Than 3 MeV

Description

The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the M65609E combines an

extremely low standby supply current (Typical value = 20 µA) with a fast access time

at 40 ns over the full military temperature range. The high stability of the 6T cell pro-

vides excellent protection against soft errors due to noise.

The M65609E is processed according to the methods of the latest revision of the MIL

STD 883 (class B or S), ESA SCC 9000 or QML.

It is produced on the same process as the MH1RT sea of gates series.

Rad. Hard

128K x 8

3.3-volt

Very Low Power

CMOS SRAM

M65609E

2M65609E 4158D–AERO–06/02

Block Diagram

Pin Configuration 32 pins Flatpack 400 MILS

Pin Description Table 1. Pin Names

Name Description

A0 - A16 Address Inputs

I/O1 - I/O8 Data Input/Output

CS1Chip Select 1

CS2Chip Select 2

WE Write Enable

OE Output Enable

VCC Power

GND Ground

M65609E

4158D–AERO–06/02

Table 2. Truth Table

Note: L = low, H = high, X = H or L, Z = high impedance.

CS1CS2WE OE Inputs/

Outputs Mode

HXXXZ

Deselect/

Power-down

XLXXZ

Deselect/

Power-down

LHHLDataOutRead

LHLXDataInWrite

LHHHZ

Output

Disable

4M65609E 4158D–AERO–06/02

Electrical Characteristics

Absolute Maximum Ratings

Military Operating Range

Recommended DC Operating Conditions

Capacitance

Note: 1. Guaranteed but not tested.

Supply Voltage to GND Potential............................ -0.5V + 5V

DC Input Voltage.............................. GND - 0.3V to VCC +0.3

DC Output Voltage High Z State...... GND - 0.3V to VCC +0.3

Storage Temperature.................................... -65°Cto+150°C

Output Current Into Outputs (Low) ............................... 20 mA

Electro Statics Discharge Voltage............................... > 2001V

(MIL STD 883D Method 3015.3)

*NOTE: Stresses greater than those listed under Absolute Max-

imum Ratings may cause permanent damage to the

device. This is a stress rating only and functional oper-

ation of the device at these or any other conditions

above those indicated in the operational sections of

this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may

affect reliability.

Operating Voltage Operating Temperature

3.3V + 0.3V -55°Cto+125°C

Parameter Description Min Typ Max Unit

VCC Supply voltage 3 3.3 3.6 V

Gnd Ground 0.0 0.0 0.0 V

VIL Input low voltage GND - 0.3 0.0 0.8 V

VIH Input high voltage 2.2 – VCC +0.3 V

Parameter Description Min Typ Max Unit

CIN(1) Input low voltage – – 8 pF

COUT(1) Output high voltage – – 8 pF

M65609E

4158D–AERO–06/02

DC Parameters

DC Test Conditions

Consumption

Parameter Description Minimum Typical Maximum Unit

IIX (1)

1. Gnd<Vin<VCC, Gnd < Vout < VCC Output Disabled.

Input leakage

current -1 – 1 µA

IOZ (1) Output leakage

current -1 – 1 µA

VOL (2)

2. VCC min.IOL=1mA.

Output low voltage - – 0.4 V

VOH (3)

3. VCC min. IOH = -0.5 mA.

Output high voltage 2.4 – – V

Symbol Description 65609E-40 Unit Value

ICCSB (1) Standby supply current 2.5 mA max

ICCSB1(2) Standby supply current 1.5 mA max

ICCOP (3) Dynamic operating

current 50 mA max

1. CS1>VIH or CS2<VIL and CS1<VIL.

2. CS1>VCC -0.3Vor,CS

2< Gnd + 0.3V and CS1<0.2V

3. F=1/T

AVAV,I

OUT =0mA,W=OE=VIH,Vin=GndorVCC,VCC max.

6M65609E 4158D–AERO–06/02
Write Cycle
Note: 1. Parameters guaranteed, not tested, with 5 pF output loading (see Section “AC Test Conditions” Figure 2).
Read Cycle
Note: 1. Parameters guaranteed, not tested, with 5 pF output loading (seeSection “AC Test Conditions” Figure 2).
Symbol Parameter 65609E-40 Unit Value
tAVAW Write cycle time 35 ns min
tAVWL Address set-up time 0 ns min
tAVWH Address valid to end of write 28 ns min
tDVWH Data set-up time 28 ns min
tE1LWH CS1low to write end 28 ns min
tE2HWH CS2high to write end 28 ns min
tWLQZ Write low to high Z (1) 15 ns max
tWLWH Write pulse width 28 ns min
tWHAX Address hold from to end of
write +3 ns min
tWHDX Data hold time 0 ns min
tWHQX WritehightolowZ(1) 0nsmin
Symbol Parameter 65609E-40 Unit Value
tAVAV Read cycle time 40 ns min
tAVQV Address access time 40 ns max
tAVQX Address valid to low Z 3 ns min
tE1LQV Chip-select1access
time 40 ns max
tE1LQX CS1low to low Z (1) 3nsmin
tE1HQZ CS1high to high Z (1) 15 ns max
tE2HQV Chip-select2access
time 40 ns max
tE2HQX CS2high to low Z (1) 3nsmin
tE2LQZ CS2low to high Z (1) 15 ns max
tGLQV Output Enable access
time 12 ns max
tGLQX OE low to low Z (1) 0nsmin
tGHQZ OE high to high Z (1) 10 ns max

M65609E

4158D–AERO–06/02

AC Parameters

AC Test Conditions

AC Test Loads Waveforms

Input Pulse Levels:.......................................................GND to 3.0V

Input Rise/Fall Times: ..................................................5 ns

Input Timing Reference Levels: ...................................1.5V

Output loading IOL/IOH (see figure 1 and 2)................+30 pF

Figure 1 Figure 2 Figure 3

R1 2552

2824

1340

3.3V 3.3V

8M65609E 4158D–AERO–06/02

Data Retention Mode Atmel CMOS RAM’s are designed with battery backup in mind. Data retention voltage

and supply current are guaranteed over temperature. The following rules ensure data

retention:

1. During data retention CS must be held high within VCC to VCC -0.2Vorchip

select BS must be held down within GND to GND +0.2V.

2. Output Enable (OE) should be held high to keep the RAM outputs high imped-

ance, minimizing power dissipation.

3. During power-up and power-down transitions CS and OE must be kept between

VCC + 0.3V and 70% of VCC, or with BS between GND and GND -0.3V.

4. The RAM can begin operation > tRns after VCC reaches the minimum operation

voltages (3V).

Figure 1. Data Retention Timing

Data Retention Characteristics

Notes: 1. TAVAV = Read Cycle Time

2. CS1 =VCC or CS2 = CS1 = GND, VIN = GND/VCC.

3V 3V

Parameter Description Min Typical TA=25°CMax Unit

VCCDR VCC for data

retention 2.0 – – V

TCDR Chip deselect to

data retention time 0.0 – – ns

tROperation recovery

time tAVAV(1) ––ns

ICCDR1(2) Data retention

current at 2.0V – 0.010 1.0 mA

M65609E

4158D–AERO–06/02

Write Cycle 1. WE Controlled.

OE High During Write

Write Cycle 2. WE Controlled.

OE Low

10 M65609E 4158D–AERO–06/02

Write Cycle 3. CS1orCS2

Controlled(1)

Note: 1. The internal write time of the memory is defined by the overlap of CS1 LOW and CS2 HIGH and W LOW. Both signals must

be activated to initiate a write and either signal can terminate a write by going in activated. The data input setup and hold

timing should be referenced to the actived edge of the signal that terminates the write. Data out is high impedance if OE =

VIH.

M65609E

4158D–AERO–06/02

Read Cycle nb 1

Read Cycle nb 2

Read Cycle nb 3

12 M65609E 4158D–AERO–06/02

Ordering Information

Note: 1. Contact Atmel for availability.

Part Number Temperature Range Speed Package Flow

MMDJ-65609EV-40 -55 to +125°C 40 ns FP32.4 Standard Mil

MMDJ-65609EV-40MQ -55 to +125°C40ns FP32.4 QMLQ

MMDJ-65609EV-40-E 25°C 40 ns FP32.4 Engineering Samples

MMDJ-65609EV-40/883(1) -55to+125°C 40 ns FP32.4 MIL 883 B

SMDJ-65609EV-40/883(1) -55to+125°C 40 ns FP32.4 MIL 883 S

MM0-65609EV-40-E 25°C 40 ns Die Engineering Samples

MM0-65609EV-40MQ -55 to +125°C40ns Die QMLQ

M65609E

4158D–AERO–06/02

Package Drawing

32-pin Flat Pack (400 Mils)

Printedonrecycledpaper.

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Other terms and product names may be the trademarks of others.

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which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors

which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does

not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted

by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical

components in life support devices or systems.

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4158D–AERO–06/02 /xM