http://www.fujielectric.com/products/semiconductor/ 2MBI1400VXB-120P-50 IGBT Modules IGBT MODULE (V series) 1200V / 1400A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Conditions Inverter Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Ic Continuous Collector current Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting Screw torque (*3) Main Terminals Sense Terminals Maximum ratings 1200 20 1800 1400 2800 1400 2800 7650 175 150 150 -40 ~ +150 Units V V AC : 1min. 4000 VAC M5 M8 M4 6.0 10.0 2.1 Nm 1ms Tc=25C Tc=100C 1ms 1 device A W C Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8) Recommendable Value : Sense Terminals1.8 ~ 2.1 Nm (M4) Electrical characteristics (at Tj= 25C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Inverter Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Thermistor Forward on voltage Symbols Conditions ICES IGES VGE (th) VCE (sat) (terminal) (*4) VGE = 0V, VCE = 1200V VCE = 0V, VGE = 20V VCE = 20V, IC = 1400mA VCE (sat) (chip) Rg(int) Cies ton tr tr (i) toff tf VF (terminal) (*4) VF (chip) Reverse recovery time trr Resistance R B value B VGE = 15V IC = 1400A VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 1400A VGE = 15V RG = 1.0 Ls=60nH VGE = 0V IF = 1400A IF = 1400A T=25C T=100C T=25/50C Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Characteristics min. typ. max. 12.0 2400 6.0 6.5 7.0 1.75 2.20 2.10 2.15 1.65 2.10 2.00 2.05 0.79 128 1.00 0.40 0.15 1.20 0.15 1.90 2.35 2.05 2.00 1.80 2.25 1.95 1.90 0.20 5000 465 495 520 3305 3375 3450 Units mA nA V V nF sec V sec K Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal. Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*5) Rth(c-f) Conditions Inverter IGBT Inverter FWD with Thermal Compound Characteristics min. typ. max. 0.0195 0.0360 0.00420 - Units C/W Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 7568c MARCH 2014 2MBI1400VXB-120P-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [INVERTER] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150C / chip 3000 VGE=20V 12V 2000 10V 1500 1000 500 12V 2000 10V 1500 1000 8V 500 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage: VCE [V] 2 3 4 5 [INVERTER] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25C / chip 10 2000 Tj=25C Collector-Emitter Voltage: VCE [V] 125C 2500 150C 1500 1000 500 0 8 6 4 Ic=2800A Ic=1400A Ic=700A 2 0 0 1 2 3 4 5 Collector-Emitter Voltage: VCE [V] [INVERTER] 1000 20.00 Gate-Emitter voltage: VGE [V] 15.00 Cies 100 Cres Coes 1 0 5 10 15 20 25 15 20 25 [INVERTER] Dynamic Gate Charge (typ.) Vcc=600V, Ic=1400A, Tj= 25C Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, = 1MHz, Tj= 25C 10 10 Gate-Emitter Voltage: VGE [V] 600 10.00 400 5.00 200 0.00 -5.00 0 VGE -200 -10.00 -400 -15.00 -600 -20.00 -15000 30 800 VCE -5000 5000 Gate charge: Qg [nC] Collector-Emitter voltage: VCE [V] 2 -800 15000 Collector-Emitter voltage: VCE [V] Collector Current: Ic [A] 1 Collector-Emitter voltage: VCE [V] 3000 Gate Capacitance: Cies, Coes, Cres [nF] 15V VGE= 20V 2500 Collector current: Ic [A] 2500 Collector current: Ic [A] 3000 15V 2MBI1400VXB-120P-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=1.0, Tj=25C [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=1.0, Tj=125C, 150C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 toff 1000 ton tr tf 100 10 0 500 1000 1500 2000 2500 toff 1000 ton tf 100 Tj=125oC Tj=150oC 10 3000 0 500 Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] Switching time: ton, tr, toff, tf [nsec] toff ton tr tf o Tj=125 C Tj=150oC 10 0.1 1 900 2000 2500 3000 Tj=125oC Tj=150oC 800 700 600 500 400 Eoff 300 Eon 200 100 Err 0 0 10 500 1000 1500 2000 2500 3000 Collector current: Ic [A] Gate resistance: RG [] [INVERTER] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=1400A, VGE=15V, Tj=125C, 150C [INVERTER] Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=1.0, Tj=150C 3000 800 Tj=125oC Tj=150oC 2500 600 400 Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] 1500 [INVERTER] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=1.0, Tj=125C, 150C 10000 100 1000 Collector current: Ic [A] [INVERTER] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=1400A, VGE=15V, Tj=125C, 150C 1000 tr Eoff Eon 200 2000 1500 1000 500 Err 0 0 0 1 Notice) Please refer to page 6. There is definition of VCE. 10 Gate resistance: RG [] 0 500 1000 Collector-Emitter voltage: VCE [V] 3 1500 2MBI1400VXB-120P-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [INVERTER] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=15V, RG=1.0, Tj=25C Forward Current vs. Forward Voltage (typ.) chip 10000 Tj=25C 2500 Forward current: IF [A] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 3000 2000 1500 1000 125C 150C 500 Irr 1000 trr 100 10 0 0 1 2 3 0 1000 Forward on voltage: VF [V] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=15V, RG=1.0, Tj=125C, 150C 1 Thermal resistance: Rth(j-c) [C/W] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Tj=125oC Tj=150oC Irr 1000 trr 100 0 500 1000 1500 2000 2500 0.1 FWD 0.01 IGBT 0.001 T sec Rth IGBT C/W FWD 0.0001 0.001 3000 Forward current: IF [A] 0.0023 0.00209 0.00386 0.0301 0.00530 0.00979 0.01 0.0598 0.00749 0.01383 0.0708 0.00461 0.00852 0.1 1 Pulse Width : Pw [sec] [THERMISTOR] FWD safe operating area (max.) Temperature characteristic (typ.) Tj=150C 100 3000 Reverse recovery current: Irr [A] Resistance : R [k] 3000 Transient Thermal Resistance (max.) 10000 10 2000 Forward current: IF [A] 10 1 0.1 2500 1500 1000 0 20 40 60 80 100 120 140 160 Temperature [C] Notice) Please refer to page 6. There is definition of VCE. 500 0 -60 -40 -20 Pmax=1400kW 2000 0 500 1000 Collector-Emitter voltage: VCE [V] 4 1500 2MBI1400VXB-120P-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ LABEL Outline Drawings (Unit: mm) Weight:1250g(typ.) Equivalent Circuit [ Inverter ] [ Thermistor ] Main C1 (9 ), (11) Main C2E1 (8) Sense C1 (5) TH1 (7) G1(4) TH2 (6) Sense C2E1(3) G2 (1) Sense E2 (2) Main E2 (10) , (12) 5 2MBI1400VXB-120P-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Definition of on-state voltage at terminal and switching characteristics Main C1 G1 Main C2E1 VCE (terminal) of Upper arm Switching characteristics of VCE also is defined between Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm . Sense C2E1 G2 Main E2 Fuji defined VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm . Sense C1 Please use these terminals whenever measure spike voltage and on-state voltage . VCE (terminal) of Lower arm Sense E2 6 2MBI1400VXB-120P-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7.Copyright (c)1996-2014 by Fuji Electric Co., Ltd. All rights reserved. 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