1
http://www.fujielectric.com/products/semiconductor/
7568c
MARCH 2014
2MBI1400VXB-120P-50 IGBT Modules
IGBT MODULE (V series)
1200V / 1400A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items Symbols Conditions Maximum ratings Units
Inverter
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current
Ic Continuous Tc=25°C 1800
A
Tc=100°C 1400
Ic pulse 1ms 2800
-Ic 1400
-Ic pulse 1ms 2800
Collector power dissipation Pc 1 device 7650 W
Junction temperature Tj 175
°C
Operating junction temperature (under switching conditions)
Tjop 150
Case temperature TC150
Storage temperature Tstg -40 ~ +150
Isolation voltage
between terminal and copper base (*1)
Viso AC : 1min. 4000 VAC
between thermistor and others (*2)
Screw torque (*3)
Mounting
-
M5 6.0
N m
Main Terminals M8 10.0
Sense Terminals M4 2.1
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions Characteristics Units
min. typ. max.
Inverter
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 12.0 mA
Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 2400 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 1400mA 6.0 6.5 7.0 V
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
(*4) VGE = 15V
IC = 1400A
Tj=25°C - 1.75 2.20
V
Tj=125°C - 2.10 -
Tj=150°C - 2.15 -
VCE (sat)
(chip)
Tj=25°C - 1.65 2.10
Tj=125°C - 2.00 -
Tj=150°C - 2.05 -
Internal gate resistance Rg(int) - - 0.79 - Ω
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 128 - nF
Turn-on time
ton VCC = 600V
IC = 1400A
VGE = ±15V
RG = 1.0Ω
Ls=60nH
- 1.00 -
µsec
tr - 0.40 -
tr (i) - 0.15 -
Turn-off time toff - 1.20 -
tf - 0.15 -
Forward on voltage
VF
(terminal)
(*4) VGE = 0V
IF = 1400A
Tj=25°C - 1.90 2.35
V
Tj=125°C - 2.05 -
Tj=150°C - 2.00 -
VF
(chip)
Tj=25°C - 1.80 2.25
Tj=125°C - 1.95 -
Tj=150°C - 1.90 -
Reverse recovery time trr IF = 1400A - 0.20 - µsec
Thermistor
Resistance RT=25°C - 5000 - Ω
T=100°C 465 495 520
B value B T=25/50°C 3305 3375 3450 K
Note *4: Please refer to page 6 , there is denition of on-state voltage at terminal.
Thermal resistance characteristics
Items Symbols Conditions Characteristics Units
min. typ. max.
Thermal resistance (1device) Rth(j-c) Inverter IGBT - - 0.0195
°C/W
Inverter FWD - - 0.0360
Contact thermal resistance (1device) (*5) Rth(c-f) with Thermal Compound -
0.00420
-
Note *5: This is the value which is dened mounting on the additional cooling n with thermal compound.
2
IGBT Modules
2MBI1400VXB-120P-50
http://www.fujielectric.com/products/semiconductor/
3
Characteristics (Representative)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
[INVERTER]
[INVERTER][INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25°C
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
[INVERTER]
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=1400A, Tj= 25°C
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
Collector-Emitter voltage: VCE [V]
Gate Capacitance: Cies, Coes, Cres [nF]
0
500
1000
1500
2000
2500
3000
0 1 2 3 4 5
Collector-Emitter voltage: VCE [V]
Collector current: Ic [A]
VGE=20V
15V
12V
10V
8V
0
500
1000
1500
2000
2500
3000
0 1 2 3 4 5
Collector-Emitter voltage: VCE [V]
Collector current: Ic [A]
VGE= 20V
12V
15V
10V
8V
0
500
1000
1500
2000
2500
3000
01234
Collector-Emitter Voltage: VCE [V]
Collector Current: Ic [A]
125°C
Tj=25°C
150°C
0
2
4
6
8
10
5 10 15 20 25
Gate-Emitter Voltage: VGE [V]
Collector-Emitter Voltage: VCE [V]
Ic=2800A
Ic=1400A
Ic=700A
Gate charge: Qg [nC]
1
10
100
1000
0 10 20 305 15 25
Cies
Cres
Coes
-800
-600
-400
-200
0
200
400
600
800
-20.00
-15.00
-10.00
-5.00
0.00
5.00
10.00
15.00
20.00
-15000 -5000 5000 15000
Collector-Emitter voltage: VCE [V]
Gate-Emitter voltage: VGE [V]
VCE
VGE
2
3
IGBT Modules
2MBI1400VXB-120P-50
http://www.fujielectric.com/products/semiconductor/
+VGE=15V, -VGE=15V, RG=1.0Ω, Tj=150°CVcc=600V, Ic=1400A, VGE=±15V, Tj=125°C, 150°C
Switching loss vs. Gate resistance (typ.)
Vcc=600V, VGE=±15V, RG=1.0Ω, Tj=125°C, 150°C
Switching time vs. Collector current (typ.)
[INVERTER]
[INVERTER][INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.0Ω, Tj=25°C
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.0Ω, Tj=125°C, 150°C
[INVERTER]
Reverse bias safe operating area (max.)
[INVERTER]
[INVERTER]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=1400A, VGE=±15V, Tj=125°C, 150°C
Collector current: Ic [A]
Switching time: ton, tr, toff, tf [nsec]
Collector current: Ic [A]
Switching time: ton, tr, toff, tf [nsec]
10
100
1000
10000
0.1 1 10
Gate resistance: RG [Ω]
Switching time: ton, tr, toff, tf [nsec]
tf
tr
toff
Tj=125oC
Tj=150oC
Collector current: Ic [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
0
200
400
600
800
0110
Gate resistance: RG [Ω]
Switching loss: Eon, Eoff, Err [mJ/pulse]
Eoff
Eon
Err
Tj=125oC
Tj=150oC
Collector-Emitter voltage: VCE [V]
Collector current: Ic [A]
ton
0
500
1000
1500
2000
2500
3000
0 500 1000 1500
Notice)
Please refer to page 6.
There is definition of VCE.
10
100
1000
10000
0 500 1000 1500 2000 2500 3000
tf
tr
toff
ton
Tj=125oC
Tj=150oC
10
100
1000
10000
0 500 1000 1500 2000 2500 3000
t
f
t
r
tof
f
ton
0
100
200
300
400
500
600
700
800
900
0 500 1000 1500 2000 2500 3000
Eon
Eoff
Err
Tj=125oC
Tj=150oC
4
IGBT Modules
2MBI1400VXB-120P-50
http://www.fujielectric.com/products/semiconductor/
5
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, RG=1.0Ω, Tj=25°C
Temperature characteristic (typ.)
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, RG=1.0Ω, Tj=125°C, 150°C
[THERMISTOR]
[INVERTER]
]RETREVNI[]RETREVNI[
Transient Thermal Resistance (max.)
Forward Current vs. Forward Voltage (typ.)
chip
0
500
1000
1500
2000
2500
3000
0123
Forward on voltage: VF [V]
Forward current: IF [A]
125°C
Tj=25°C
150°C
Forward current: IF [A]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Pulse Width : Pw [sec]
Thermal resistance: Rth(j-c) [°C/W]
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
Temperature [°C]
Resistance : R [kΩ]
Forward current: IF [A]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
0.0001
0.001
0.01
0.1
1
0.001 0.01 0.1 1
FWD
IGBT
T
〔sec〕0.0023 0.0301 0.0598 0.0708
Rth IGBT 0.00209 0.00530 0.00749 0.00461
〔
°C/W
〕
FWD 0.00386 0.00979 0.01383 0.00852
10
100
1000
10000
0 500 1000 1500 2000 2500 3000
Irr
trr
Tj=125oC
Tj=150oC
FWD safe operating area (max.)
Tj=150°C
0
500
1000
1500
2000
2500
3000
0 500 1000 1500
Reverse recovery current: Irr [A]
Collector-Emitter voltage: VCE [V]
Pmax=1400kW
Notice)
Please refer to page 6.
There is definition of VCE.
10
100
1000
10000
0 1000 2000 3000
Irr
trr
4
5
IGBT Modules
2MBI1400VXB-120P-50
http://www.fujielectric.com/products/semiconductor/
Outline Drawings (Unit: mm)
Equivalent Circuit
Weight:1250g(typ.)
[ Inverter ] [ Thermistor ]
Main C1 (9 ), (11)
Main E2 (10) , (12)
Main C2E1 (8)
G1(4)
Sense C1 (5)
Sense C2E1(3)
G2 (1)
Sense E2 (2)
TH1 (7)
TH2 (6)
LABEL
6
IGBT Modules
2MBI1400VXB-120P-50
http://www.fujielectric.com/products/semiconductor/
7
Denition of on-state voltage at terminal and switching characteristics
Main C1
Main E2
Main C2E1
G1
Sense C1
Sense C2E1
G2
Sense E2
VCE (terminal)
of Upper arm
VCE (terminal)
of Lower arm
Fuji defined VCE value of terminal by using
Sense C1 and Sense C2E1 for Upper arm and
Sense C2E1 and Sense E2 for Lower arm .
Switching characteristics of VCE also is defined
between Sense C1 and Sense C2E1 for Upper arm and
Sense C2E1 and Sense E2 for Lower arm .
Please use these terminals whenever
measure spike voltage and on-state voltage .
6
7
IGBT Modules
2MBI1400VXB-120P-50
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.
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implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
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• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
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(without limitation).
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• Submarine repeater equipment
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
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Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
Global
中国
Europe
North America
日本
Technical Information IGBT Modules
2016 -10
Please refer to URLs below for futher information about products, application manuals and design support.
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4
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5
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6
IGBT Loss Simulation Software
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7
Fuji Electric Journal
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