Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 31 dB Drain Efficiency -- 15% ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth Driver Application * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 31.5 dB ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth * Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power * Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW Pout. Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * 200C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel VRD1 VRG1 VDS2 VDS1 3 Stages IC RFin VDS3/RFout VGS1 VGS2 VGS3 Quiescent Current Temperature Compensation Figure 1. Functional Block Diagram MW4IC2230NBR1 MW4IC2230GNBR1 2110 - 2170 MHz, 30 W, 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2230NBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2230GNBR1 GND VDS2 VRD1 VRG1 VDS1 1 2 3 4 5 16 15 RFin 6 14 VDS3/ RFout VGS1 VGS2 VGS3 GND 7 8 9 10 11 13 12 GND GND (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +8 Vdc Storage Temperature Range Tstg - 65 to +175 C Operating Channel Temperature TJ 200 C Input Power Pin 20 dBm Symbol Value (1) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case RJC Stage 1 Stage 2 Stage 3 C/W 10.5 5.1 2.3 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C5 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 29 31.5 -- dB Input Return Loss IRL -- - 25 - 10 dB -- -- - 53.5 - 52 - 50 -- Adjacent Channel Power Ratio ACPR Pout = 0.4 W Avg. Pout = 1.26 W Avg. dBc Typical Performances (In Freescale Test Fixture tuned for 0.4 W Avg. W - CDMA driver) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, 2110 MHz<Frequency <2170 MHz Saturated Pulsed Output Power (f = 1 kHz, Duty Cycle 10%) Psat -- 43 -- W Quiescent Current Accuracy over Temperature ( - 10 to 85C) (2) IQT -- 5 -- % Gain Flatness in 30 MHz Bandwidth GF -- 0.13 -- dB Deviation from Linear Phase in 30 MHz Bandwidth -- 1 -- Delay -- 1.6 -- ns -- 15 -- Delay @ Pout = 0.4 W CW Including Output Matching Part - to - Part Phase Variation 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. (continued) MW4IC2230NBR1 MW4IC2230GNBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Reference Application Circuit tuned for 2 - carrier W - CDMA signal) VDD = 28 Vdc, Pout = 0.4 W Avg., IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps -- 31.5 -- dB Intermodulation Distortion IM3 -- - 52 -- dBc ACPR -- - 55 -- dBc IRL -- - 26 -- dB Adjacent Channel Power Ratio Input Return Loss MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 3 VD3 VD2 + VD1 C2 1 2 3 NC 4 NC 5 C5 + C1 C6 RF INPUT DUT + 16 NC 15 C7 Z2 C3 C9 14 Z4 Z1 Z5 Z6 Z7 RF OUTPUT 6 C10 VG1 R1 VG2 R2 VG3 R3 7 NC 8 9 10 11 Quiescent Current Temperature Compensation NC 13 C11 C12 Z3 12 + C8 Z1 Z2, Z3 Z4 Z5 2.180 x 0.090 Microstrip 0.040 x 0.430 Microstrip 0.350 x 0.240 Microstrip 0.420 x 0.090 Microstrip Z6 Z7 PCB C4 1.120 x 0.090 Microstrip 0.340 x 0.090 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55 Figure 3. MW4IC2230NBR1(GNBR1) Test Circuit Schematic Table 6. MW4IC2230NBR1(GNBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4 10 F, 35 V Tantalum Capacitors TAJD106K035 AVX C5, C6, C7, C8, C12 8.2 pF 100B Chip Capacitors 100B8R2CW ATC C9, C10 1.8 pF 100B Chip Capacitors 100B1R8BW ATC C11 0.3 pF 100B Chip Capacitor 100B0R3BW ATC R1, R2, R3 1.8 kW Chip Resistors (1206) MW4IC2230NBR1 MW4IC2230GNBR1 4 RF Device Data Freescale Semiconductor C2 C3 VD2 MW4IC2230 Rev 1 VD1 VD3 C5 C7 C1 C6 C12 C9 C10 C11 C8 R1 VG1 R2 VG2 GND R3 VG3 C4 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MW4IC2230NBR1(GNBR1) Test Circuit Component Layout MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 5 32 0 Gps G ps , POWER GAIN (dB) 31 -10 30 -20 IRL 29 -30 VDD = 28 Vdc Pout = 26 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1-Carrier W-CDMA 28 -40 27 -50 ACPR 26 2050 -60 2100 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) TYPICAL CHARACTERISTICS 2200 2150 f, FREQUENCY (MHz) 0 Gps -10 -20 30 IRL -30 29 28 VDD = 28 Vdc Pout = 31 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1-Carrier W-CDMA -40 ACPR 27 26 2050 -50 -60 2100 2150 -40 -45 VDD = 28 Vdc IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA f = 2140 MHz, 1-Carrier W-CDMA 25_C -50 -30_C -55 -60 1 0.1 2200 f, FREQUENCY (MHz) G ps , POWER GAIN (dB) Figure 7. Adjacent Channel Power Ratio versus Output Power 33 0 32 -10 Gps 31 IRL 30 VDD = 28 Vdc Pout = 26 dBm (Avg.) IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA 2-Carrier W-CDMA 28 27 2050 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single - Carrier W - CDMA Wideband Performance @ Pout = 31 dBm 29 TC = 85_C 2150 -30 -40 IM3 ACPR 2100 -20 -50 -60 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IM3, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) 31 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 32 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 5. Single - Carrier W - CDMA Wideband Performance @ Pout = 26 dBm 2200 f, FREQUENCY (MHz) Figure 8. 2 - Carrier W - CDMA Wideband Performance MW4IC2230NBR1 MW4IC2230GNBR1 6 RF Device Data Freescale Semiconductor 2.00 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 P3dB = 46.3 dBm (43 W) Ideal P1dB = 45.3 dBm (34 W) 1.90 1.85 Actual 4 6 8 10 12 14 16 18 20 22 1.80 1.75 1.70 1.65 VDD = 28 Vdc IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pulsed CW, 8 sec(on), 1 msec(off) f = 2140 MHz 2 VDD = 28 Vdc, Small Signal IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA 1.95 DELAY (ns) Pout , OUTPUT POWER (dBm) TYPICAL CHARACTERISTICS 1.60 1.55 1.50 1950 24 2000 2050 2100 2150 2200 2250 Pin, INPUT POWER (dBm) f, FREQUENCY (MHz) Figure 9. Output Power versus Input Power Figure 10. Delay versus Frequency 2300 MTTF FACTOR (HOURS X AMPS 2 ) 1.E+09 3rd Stage 1.E+08 2nd Stage 1.E+07 1st Stage 1.E+06 1.E+05 1.E+04 90 100 110 120 130 140 150 160 170 180 190 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 11. MTTF Factor versus Temperature Junction MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 7 Zin* Zload* f = 2050 MHz f = 2230 MHz f = 2050 MHz f = 2230 MHz Zo = 50 VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 26 dBm Zin f MHz Zin Zload 2050 42.18 + j1.49 8.52 - j0.46 2110 41.06 - j1.30 8.58 - j0.20 2140 40.49 - j2.42 8.63 - j0.09 2170 40.05 - j3.45 8.69 - j0.01 2230 39.29 - j6.31 8.81 + j0.04 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 12. Series Equivalent Input and Load Impedance MW4IC2230NBR1 MW4IC2230GNBR1 8 RF Device Data Freescale Semiconductor NOTES MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MW4IC2230NBR1 MW4IC2230GNBR1 10 RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 11 MW4IC2230NBR1 MW4IC2230GNBR1 12 RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 13 MW4IC2230NBR1 MW4IC2230GNBR1 14 RF Device Data Freescale Semiconductor MW4IC2230NBR1 MW4IC2230GNBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp. MW4IC2230NBR1 MW4IC2230GNBR1 Document Number: MW4IC2230N Rev. 6, 5/2006 16 RF Device Data Freescale Semiconductor