100B8R2CW - Freescale Semiconductor / Motorola

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

RF LDMOS Wideband Integrated

Power Amplifiers

The MW4IC2230N wideband integrated circuit is designed for W-CDMA

base station applications. It uses Freescale’s newest High Voltage (26 to 28

Volts) LDMOS IC technology and integrates a multi-stage structure. Its

wideband on-chip design makes it usable from 1600 to 2400 MHz. The linearity

performances cover all modulations for cellular applications: GSM, GSM

EDGE, TDMA, CDMA and W- CDMA.

Final Application

•Typical Single - Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 =

60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel

Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 31 dB

Drain Efficiency — 15%

ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth

Driver Application

•Typical Single - Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 =

60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel

Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 31.5 dB

ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth

•Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW

Output Power

•Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW

Pout.

Features

•Characterized with Series Equivalent Large- Signal Impedance Parameters

•On- Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

•Integrated Quiescent Current Temperature Compensation

with Enable/Disable Function

•On- Chip Current Mirror gm Reference FET for Self Biasing Application (1)

•Integrated ESD Protection

•200°C Capable Plastic Package

•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel

Figure 1. Functional Block Diagram Figure 2. Pin Connections

(Top View)

GND

VDS1

RFin

VGS1

GND

VDS2

VDS3/

RFout

GND

VGS2

VGS3

GND

Quiescent Current

Temperature Compensation

3 Stages IC

VGS1

RFin

VDS2

VDS1

VGS2

VGS3

VDS3/RFout

Note: Exposed backside flag is source

terminal for transistors.

VRD1

VRG1 VRD1

VRG1

1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1987.

Document Number: MW4IC2230N

Rev. 6, 5/2006

Freescale Semiconductor

Technical Data

2110 -2170 MHz, 30 W, 28 V

SINGLE W- CDMA

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

CASE 1329-09

TO-272 WB- 16

PLASTIC

MW4IC2230NBR1

MW4IC2230GNBR1

CASE 1329A-03

TO-272 WB- 16 GULL

PLASTIC

MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

MW4IC2230NBR1 MW4IC2230GNBR1

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage VDSS -0.5, +65 Vdc

Gate-Source Voltage VGS -0.5, +8 Vdc

Storage Temperature Range Tstg -65 to +175 °C

Operating Channel Temperature TJ200 °C

Input Power Pin 20 dBm

Table 2. Thermal Characteristics

Characteristic Symbol Value (1) Unit

Thermal Resistance, Junction to Case

Stage 1

Stage 2

Stage 3

RθJC

10.5

5.1

2.3

°C/W

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model 2 (Minimum)

Machine Model M3 (Minimum)

Charge Device Model C5 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 °C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA,

Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single-carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz

Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain Gps 29 31.5 — dB

Input Return Loss IRL — -25 -10 dB

Adjacent Channel Power Ratio

Pout = 0.4 W Avg.

Pout = 1.26 W Avg.

ACPR

—

-53.5

-52

-50

—

dBc

Typical Performances (In Freescale Test Fixture tuned for 0.4 W Avg. W-CDMA driver) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA,

IDQ3 = 265 mA, 2110 MHz<Frequency <2170 MHz

Saturated Pulsed Output Power

(f = 1 kHz, Duty Cycle 10%)

Psat — 43 — W

Quiescent Current Accuracy over Temperature (- 10 to 85°C) (2) ∆IQT —±5 — %

Gain Flatness in 30 MHz Bandwidth GF— 0.13 — dB

Deviation from Linear Phase in 30 MHz Bandwidth Φ—±1 — °

Delay @ Pout = 0.4 W CW Including Output Matching Delay — 1.6 — ns

Part-to- Part Phase Variation ∆Φ —±15 — °

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes - AN1977.

(continued)

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic Symbol Min Typ Max Unit

Typical Performances (In Freescale Reference Application Circuit tuned for 2 -carrier W- CDMA signal) VDD = 28 Vdc,

Pout = 0.4 W Avg., IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz,

2-carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3

measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain Gps — 31.5 — dB

Intermodulation Distortion IM3 — -52 — dBc

Adjacent Channel Power Ratio ACPR — -55 — dBc

Input Return Loss IRL — -26 — dB

RF Device Data

Freescale Semiconductor

MW4IC2230NBR1 MW4IC2230GNBR1

Z6 1.120″ x 0.090″ Microstrip

Z7 0.340″ x 0.090″ Microstrip

PCB Taconic TLX8 -0300, 0.030″, εr = 2.55

Figure 3. MW4IC2230NBR1(GNBR1) Test Circuit Schematic

Z1 2.180″ x 0.090″ Microstrip

Z2, Z3 0.040″ x 0.430″ Microstrip

Z4 0.350″ x 0.240″ Microstrip

Z5 0.420″ x 0.090″ Microstrip

C6C1

INPUT

VD1

VG1

VG2

Z4 Z5 Z7

OUTPUT

C12

C7 C3

VD3

DUT

C10 C11

VG3

C5C2

VD2

C8 C4

Quiescent Current

Temperature Compensation

Table 6. MW4IC2230NBR1(GNBR1) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C2, C3, C4 10 µF, 35 V Tantalum Capacitors TAJD106K035 AVX

C5, C6, C7, C8, C12 8.2 pF 100B Chip Capacitors 100B8R2CW ATC

C9, C10 1.8 pF 100B Chip Capacitors 100B1R8BW ATC

C11 0.3 pF 100B Chip Capacitor 100B0R3BW ATC

R1, R2, R3 1.8 kW Chip Resistors (1206)

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

Figure 4. MW4IC2230NBR1(GNBR1) Test Circuit Component Layout

VG1

VG2

VD1

VG3

VD2

GND

R2 R3

Rev 1

MW4IC2230

VD3

C10 C11

C12

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor

signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have

no impact on form, fit or function of the current product.

RF Device Data

Freescale Semiconductor

MW4IC2230NBR1 MW4IC2230GNBR1

TYPICAL CHARACTERISTICS

2200

2050

−60

IRL

Gps

ACPR

f, FREQUENCY (MHz)

Figure 5. Single- Carrier W -CDMA Wideband

Performance @ Pout = 26 dBm

Gps, POWER GAIN (dB)

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

INPUT RETURN LOSS (dB)IRL,

VDD = 28 Vdc

Pout = 26 dBm (Avg.)

IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA

1−Carrier W−CDMA

31 −10

30 −20

29 −30

28 −40

27 −50

21502100

2200

2050

−60

31 −10

30 −20

29 −30

28 −40

27 −50

21502100

f, FREQUENCY (MHz)

Figure 6. Single- Carrier W -CDMA Wideband

Performance @ Pout = 31 dBm

Gps, POWER GAIN (dB)

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

INPUT RETURN LOSS (dB)IRL,

IRL

Gps

ACPR

VDD = 28 Vdc

Pout = 31 dBm (Avg.)

IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA

1−Carrier W−CDMA

−60

−40

0.1

TC = 85_C

Pout, OUTPUT POWER (WATTS) AVG.

Figure 7. Adjacent Channel Power Ratio

versus Output Power

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

VDD = 28 Vdc

IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA

f = 2140 MHz, 1−Carrier W−CDMA

−45

−50

−55

25_C

−30_C

2200

2050

−60

32 −10

31 −20

30 −30

29 −40

28 −50

21502100

f, FREQUENCY (MHz)

Figure 8. 2- Carrier W-CDMA Wideband Performance

Gps, POWER GAIN (dB)

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

INPUT RETURN LOSS (dB)IRL,

IRL

Gps

ACPR

VDD = 28 Vdc

Pout = 26 dBm (Avg.)

IDQ1 = 60 mA, IDQ2 = 400 mA, IDQ3 = 245 mA

2−Carrier W−CDMA IM3

IM3, INTERMODULATION DISTORTION (dBc)

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

Actual

P1dB = 45.3 dBm (34 W)

Ideal

Pin, INPUT POWER (dBm)

Figure 9. Output Power versus Input Power

Pout , OUTPUT POWER (dBm)

VDD = 28 Vdc

IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA,

Pulsed CW, 8 µsec(on), 1 msec(off)

f = 2140 MHz

P3dB = 46.3 dBm (43 W)

64 8 10 12 14 16 18 20 22 2300

1.50

2.00

1950

f, FREQUENCY (MHz)

Figure 10. Delay versus Frequency

DELAY (ns)

VDD = 28 Vdc, Small Signal

IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA

1.95

1.90

1.80

1.75

1.70

1.65

1.60

1.55

2000 2050 2100 2150 2200 2250

190

1.E+09

90 100 110 120 130 140 150 160 170 180

1.E+08

1.E+05

1.E+04

TJ, JUNCTION TEMPERATURE (°C)

Figure 11. MTTF Factor versus Temperature Junction

MTTF FACTOR (HOURS X AMPS )

This above graph displays calculated MTTF in hours x ampere2

drain current. Life tests at elevated temperatures have correlated to

better than ±10% of the theoretical prediction for metal failure. Divide

MTTF factor by ID2 for MTTF in a particular application.

3rd Stage

2nd Stage

1st Stage

1.E+07

1.E+06

1.85

RF Device Data

Freescale Semiconductor

MW4IC2230NBR1 MW4IC2230GNBR1

VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 26 dBm

Figure 12. Series Equivalent Input and Load Impedance

Zo = 50 Ω

f = 2050 MHz

f = 2230 MHz

MHz

Zin

Ω

2050

2110

2140

42.18 + j1.49

41.06 - j1.30

40.49 - j2.42

Zload*

Zin = Device input impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

2170

2230

40.05 - j3.45

39.29 - j6.31

Zin Zload

Device

Under

Test

Output

Matching

Network

Zload

Ω

8.52 - j0.46

8.58 - j0.20

8.63 - j0.09

8.69 - j0.01

8.81 + j0.04

f = 2050 MHz

f = 2230 MHz

Zin*

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

NOTES

RF Device Data

Freescale Semiconductor

MW4IC2230NBR1 MW4IC2230GNBR1

PACKAGE DIMENSIONS

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

RF Device Data

Freescale Semiconductor

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

RF Device Data

Freescale Semiconductor

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

RF Device Data

Freescale Semiconductor

MW4IC2230NBR1 MW4IC2230GNBR1

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Document Number: MW4IC2230N

Rev. 6, 5/2006

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