ly T, 7 40C Td A leet Ty" 26 "C; 10 ms ao A Ty" 160 C; 10 ms 270 A rm Ty" 26 "Cy .3_..10 ms G55 Afs Ty" 160 C; 6,310 ms 3565 As We Ty 26 C; lp = 2B A max. 125. WV Vero) Ty" 160 Cc OB WV I Ty" 160 Cc 1 mith. lore Ty" 150 "C: Ving Vipena Veo paw mia. 4 rat, rn, Pie i per diode 17 Kray per madule O28 Kay T geicter terminals, 10s 260 c Ty 10.4160 c i 10+ 12 c Wipes g.c. GD Hey rome. Te 1 min. SOR [ 250) } W i, mourting torque to heatsink zZ Mm i, a mri m approx. weight 13 g Core by SEMIKRONsk 70D Ih Fig. 1 Power dissipation v5. Output current 250) | , SAI _ oon SK 70 D f 18 ua 100 4 a LL Prot At S i ll VE Fig. 3 Forward characteristics of single diode {00 I I 4 -E SK TOD 40 0 40 ae 20 Ty = 1506 i Poe 35,90, We Fa ro Oo ci 0,6 1 1,6 Z 11-09-2003 SCT oe is a how KY SK 70D * ASHE d A MRK rn O= Vnwus Le \. A i eT Yarra Ny if crt in 1 Ny M ' . NL in a8 Vr ae el 0,6 >. RO See ees a4 Sot 1 ia 100 TOC f ims Fig. 2 Sunge overdoad current vs. time i ; re cM SK 70D 1,6 ih Zia 00 0,001 0,07 0.1 1 it 100 I 4. Fig. 4 Thermal transient Impedance ws. time by SEMIKRONSK 70D Dimensions in mim | O AS pe ots AAR 5 mi | 3 we j a4 _ 2 a FA le LF Z a? - @ aR ieee = =a en Pe tat emg Be eae ee fe mounting pins = 2innmi) This technical information specifies semiconductor devices bul promises no characteristics. Wo warranty or guaraniee expressed or implied is made regarding delivery, performance or suitability. 3 11-09-2003 SCT by SEMIKRON