AP02N90H-HF - Advanced Power Electronics Corp. USA

P02N90H/J-HF

Advanced Power N-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement BVDSS 900V

▼ Low On-resistance RDS(ON) 7.2Ω

▼ Fast Switching Characteristics ID1.9A

▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings

Symbol Units

VDS Drain-Source Voltage V

VGS Gate-Source Voltage V

ID@TC=25℃Continuous Drain Current, VGS @ 10V A

ID@TC=100℃Continuous Drain Current, VGS @ 10V A

IDM Pulsed Drain Current1A

PD@TC=25℃Total Power Dissipation W

W/℃

PD@TA=25℃Total Power Dissipation4W

EAS Single Pulse Avalanche Energy2mJ

IAR Avalanche Current A

TSTG ℃

TJOperating Junction Temperature Range ℃

Thermal Data

Symbol Value Units

Rthj-c Maximum Thermal Resistance, Junction-case 2 ℃/W

Rthj-a 62.5 ℃/W

Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W

Data & specifications subject to change without notice

1.9

1.2

+30

Parameter Rating

900

Halogen-Free Product

Storage Temperature Range -55 to 150

62.5

Linear Derating Factor 0.5

Maximum Thermal Resistance, Junction-ambient (PCB mount)4

201008115

-55 to 150

Parameter

1.9

GDSTO-251(J)

GDSTO-252(H)

dvanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts.

The through-hole version (AP02N90J) is available for low-profile

applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 900 - - V

ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.8 - V/℃

RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.85A - - 7.2 Ω

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V

gfs Forward Transconductance VDS=10V, ID=1.9A - 2 - S

IDSS Drain-Source Leakage Current VDS=900V, VGS=0V - - 10 uA

Drain-Source Leakage Current (Tj=125oC) VDS=720V, VGS=0V - - 100 uA

IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA

QgTotal Gate Charge3ID=1.9A - 12 20 nC

Qgs Gate-Source Charge VDS=540V - 2.5 - nC

Qgd Gate-Drain ("Miller") Charge VGS=10V - 4.7 - nC

td(on) Turn-on Delay Time3VDD=450V - 10 - ns

trRise Time ID=1.9A - 5 - ns

td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 18 - ns

tfFall Time RD=236Ω-9-

Ciss Input Capacitance VGS=0V - 630 1000 pF

Coss Output Capacitance VDS=25V - 40 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage3IS=1.9A, VGS=0V - - 1.3 V

trr Reverse Recovery Time3IS=1.9A, VGS=0V, - 360 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 1.8 - µC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=1.9A.

3.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP02N90H/J-HF

4.Surface mounted on 1 in2 copper pad of FR4 board

AP02N90H/J-H

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance

Temperature v.s. Junction Temperature

5. Forward Characteristic o

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

0.0

0.4

0.8

1.2

1.6

2.0

0369121518

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=25oC

VG=4.5V

10V

8.0V

6.0V

5.0V

0.00

0.25

0.50

0.75

1.00

1.25

0369121518

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=150oC 10V

8.0V

6.0V

5.0V

VG=4.5V

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-50 0 50 100 150

Tj , Junction Temperature ( oC )

Normalized RDS(ON)

ID= 0.85 A

VG=10V

0.0

0.5

1.0

1.5

2.0

0 0.2 0.4 0.6 0.8 1 1.2

VSD , Source-to-Drain Voltage (V)

IS(A)

Tj=25oCTj=150oC

0.4

0.8

1.2

1.6

-50 0 50 100 150

Tj ,Junction Temperature ( oC)

Normalized VGS(th) (V)

0.8

0.9

1.0

1.1

1.2

-50 0 50 100 150

Junction Temperature ( oC)

Normalized BVDSS (V)

AP02N90H/J-HF

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

td(on) trtd(off) tf

VDS

VGS

10%

90%

10V

QGS QGD

Charge

0481216

QG , Total Gate Charge (nC)

VGS , Gate to Sourc e Voltage ( V)

VDS =180V

VDS =360V

VDS =540V

ID=1.9A

100

1000

1 5 9 13 17 21 25 29

VDS , Drain-to-Source Voltage (V)

C (pF)

=1.0MH

Ciss

Coss

Crss

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Pulse Width (s)

Normalized Th e rmal Re sponse (Rthjc)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

DUTY=0.

SINGLE

0.01

0.10

1.00

10.00

1 10 100 1000 10000

VDS , Drain-to-Source Voltage (V)

ID (A)

TC=25oC

Single Pulse

100us

1ms

10ms

100ms

Operation in this

area limited by

RDS(ON)