XR1008, XR2008
ESURGENT
S E M I C O N D U C T O R
0.5mA, 75MHz Rail-to-Rail Amplifiers
© 2018 Resurgent Semiconductor, LLC 1 / 17 Rev 1B.R
General Description
The XR1008 (single) and XR2008 (dual) are rail-to-rail output ampliers that
offer superior dynamic performance with 75MHz small signal bandwidth
and 50V/μs slew rate. The XR1008 and XR2008 ampliers consume only
505μA of supply current per channel and are designed to operate from a
supply range of 2.5V to 5.5V (±1.25 to ±2.75).
The combination of low power, high output current drive, and rail-to-rail
performance make the XR1008 and XR2008 well suited for battery-powered
metering and test equipment.
The combination of low cost and high performance make these ampliers
suitable for high volume industrial applications such as ultrasonic heat
meters, water meters and other applications requiring high speed and low
power.
Typical Application
+
-
Rg
0.1μF
6.8μF
Out
In
+2.7
+
Rf
RIN ROUT
XR1008
Frequency Response vs. Temperature
Magnitude (1dB/div)
Frequency (MHz)
0.01 1100
100.1
FEATURES
505μA supply current
75MHz bandwidth
Input voltage range with 5V supply:
-0.3V to 3.8V
Output voltage range with 5V supply:
0.07V to 4.86V
50V/μs slew rate
12nV/√Hz input voltage noise
15mA linear output current
Fully specified at 2.7V and 5V supplies
APPLICATIONS
Portable/battery-powered applications
Mobile communications, cell phones,
pagers
ADC buffer
Active lters
Portable test instruments
Signal conditioning
Medical equipment
Portable medical instrumentation
Flow meters
Ordering Information - back page
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 2 / 17 Rev 1B.R
Absolute Maximum Ratings
Stresses beyond the limits listed below may cause
permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect
device reliability and lifetime.
VS ..................................................................................... 0V to 6V
VIN ............................................................ -VS - 0.5V to +VS +0.5V
Continuous Output Current ..................................-30mA to +30mA
Operating Conditions
Supply Voltage Range ...................................................2.5 to 5.5V
Operating Temperature Range ...............................-40°C to 125°C
Junction Temperature ........................................................... 150°C
Storage Temperature Range ...................................-65°C to 150°C
Lead Temperature (Soldering, 10s) ......................................260°C
Package Thermal Resistance
θJA (TSOT-5) .....................................................................215°C/W
θJA (SOIC-8) .....................................................................150°C/W
θJA (MSOP-8) .................................................................. 200°C/W
Package thermal resistance (θJA), JEDEC standard, multi-layer
test boards, still air.
ESD Protection
XR1008 (HBM) .........................................................................2kV
XR2008 (HBM) ......................................................................2.5kV
ESD Rating for HBM (Human Body Model).
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 3 / 17 Rev 1B.R
Electrical Characteristics at +2.7V
TA = 25°C, VS = +2.7V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted.
Symbol Parameter Conditions Min Ty p Max Units
Frequency Domain Response
UGBWSS Unity Gain -3dB Bandwidth G = +1, VOUT = 0.05Vpp, Rf = 0 65 MHz
BWSS -3dB Bandwidth G = +2, VOUT < 0.2Vpp 30 MHz
BWLS Large Signal Bandwidth G = +2, VOUT = 2Vpp 12 MHz
GBWP Gain Bandwidth Product G = +11, VOUT = 0.2Vpp 28 MHz
Time Domain Response
tR, tFRise and Fall Time VOUT = 0.2V step; (10% to 90%) 7. 5 ns
tSSettling Time to 0.1% VOUT = 1V step 60 ns
OS Overshoot VOUT = 1V step 10 %
SR Slew Rate G = -1, 2V step 40 V/μs
Distortion/Noise Response
HD2 2nd Harmonic Distortion 1MHz, VOUT = 1Vpp -67 dBc
HD3 3rd Harmonic Distortion 1MHz, VOUT = 1Vpp -72 dBc
THD Total Harmonic Distortion 1MHz, VOUT = 1Vpp 65 dB
enInput Voltage Noise >10kHz 12 nV/√Hz
DC Performance
VIO Input Offset Voltage 0 mV
dVIO Average Drift 10 μV/°C
IBInput Bias Current 1. 2 μA
dIBAverage Drift 3.5 nA/°C
IOS Input Offset Current 30 nA
PSRR Power Supply Rejection Ratio DC 60 66 dB
AOL Open Loop Gain VOUT = VS / 2 98 dB
ISSupply Current per channel 470 μA
Input Characteristics
RIN Input Resistance Non-inverting 9 MΩ
CIN Input Capacitance 1. 5 pF
CMIR Common Mode Input Range -0.3 to
1. 5 V
CMRR Common Mode Rejection Ratio DC, VCM = 0V to VS - 1.5V 74 dB
Output Characteristics
VOUT Output Voltage Swing
RL = 1kΩ to VS / 2 0.09 to
2.53 V
RL = 10kΩ to VS / 2 0.05 to
2.6 V
IOUT Output Current ±15 mA
ISC Short Circuit Current ±30 mA
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 4 / 17 Rev 1B.R
Electrical Characteristics at +5V
TA = 25°C, VS = +5V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted.
Symbol Parameter Conditions Min Ty p Max Units
Frequency Domain Response
UGBWSS Unity Gain -3dB Bandwidth G = +1, VOUT = 0.05Vpp, Rf = 0 75 MHz
BWSS -3dB Bandwidth G = +2, VOUT < 0.2Vpp 35 MHz
BWLS Large Signal Bandwidth G = +2, VOUT = 2Vpp 15 MHz
GBWP Gain Bandwidth Product G = +11, VOUT = 0.2Vpp 33 MHz
Time Domain Response
tR, tFRise and Fall Time VOUT = 0.2V step; (10% to 90%) 6 ns
tSSettling Time to 0.1% VOUT = 1V step 60 ns
OS Overshoot VOUT = 1V step 12 %
SR Slew Rate G = -1, 2V step 50 V/μs
Distortion/Noise Response
HD2 2nd Harmonic Distortion 1MHz, VOUT = 2Vpp -64 dBc
HD3 3rd Harmonic Distortion 1MHz, VOUT = 2Vpp -62 dBc
THD Total Harmonic Distortion 1MHz, VOUT = 2Vpp 60 dB
enInput Voltage Noise >10kHz 12 nV/√Hz
DC Performance
VIO Input Offset Voltage -5 -1 5 mV
dVIO Average Drift 10 μV/°C
IBInput Bias Current -3.5 1. 2 3.5 μA
dIBAverage Drift 3.5 nA/°C
IOS Input Offset Current 30 350 nA
PSRR Power Supply Rejection Ratio DC 60 66 dB
AOL Open Loop Gain VOUT = VS / 2 65 80 dB
ISSupply Current per channel 505 620 μA
Input Characteristics
RIN Input Resistance Non-inverting 9 MΩ
CIN Input Capacitance 1. 5 pF
CMIR Common Mode Input Range -0.3 to
3.8 V
CMRR Common Mode Rejection Ratio DC, VCM = 0V to VS - 1.5V 65 74 dB
Output Characteristics
VOUT Output Voltage Swing
RL = 1kΩ to VS / 2 0.2 to
4.65
0.13 to
4.73 V
RL = 10kΩ to VS / 2 0.08 to
4.84 V
IOUT Output Current ±15 mA
ISC Short Circuit Current ±30 mA
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 5 / 17 Rev 1B.R
SOIC-8
Pin No. Pin Name Description
1 NC No Connect
2 -IN Negative input
3 +IN Positive input
4 -VSNegative supply
5 NC No Connect
6 OUT Output
7 +VSPositive supply
8 NC No Connect
SOIC-8
-
+
1
2
3
4
NC
-IN
+IN
-Vs
NC
+Vs
OUT
NC
8
7
6
5
XR1008 Pin Assignments
TSOT-5
Pin No. Pin Name Description
1 OUT Output
2 -VSNegative supply
3 +IN Positive input
4 -IN Negative input
5 +VSPositive supply
XR1008 Pin Congurations
TSOT-5
-
+
2
3
5
4
+IN
+Vs
-IN
1
-Vs
OUT
XR2008 Pin Assignments
SOIC-8 / MSOP-8
Pin No. Pin Name Description
1 OUT1 Output, channel 1
2 -IN1 Negative input, channel 1
3 +IN1 Positive input, channel 1
4 -VSNegative supply
5 +IN2 Positive input, channel 2
6 -IN2 Negative input, channel 2
7 OUT2 Output, channel 2
8 +VSPositive supply
XR2008 Pin Conguration
SOIC-8 / MSOP-8
-
+
-
+
1
2
3
4
OUT1
-IN1
+IN1
-Vs
+Vs
OUT2
-IN2
+IN2
8
7
6
5
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 6 / 17 Rev 1B.R
Typical Performance Characteristics
TA = 25°C, VS = +5V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted.
Frequency Response vs CL Frequency Response vs RL
Non-Inverting Frequency Response at VS = 2.7V Inverting Frequency Response at VS = 2.7V
Non-Inverting Frequency Response at VS = 5V Inverting Frequency Response at VS = 5V
Normalized Magnitude (1dB/div)
Frequency (MHz)
0.1 1
G = 10
Rf = 1kΩ
10 100
G = 5
Rf = 1kΩ
G = 1
Rf = 0
G = 2
Rf = 1kΩ
Normalized Magnitude (1dB/div)
Frequency (MHz)
0.1 1
G = -10
Rf = 1kΩ
10 100
G = -5
Rf = 1kΩ
G = -2
Rf = 1kΩ
G = -1
Rf = 1kΩ
Normalized Magnitude (2dB/div)
Frequency (MHz)
0.1 1
G = 10
Rf = 2kΩ
10 100
G = 5
Rf = 1kΩ
G = 1
Rf = 0
G = 2
Rf = 1kΩ
Normalized Magnitude (1dB/div)
Frequency (MHz)
0.1 1
G = -10
Rf = 1kΩ
10 100
G = -5
Rf = 1kΩ
G = -1
Rf = 1kΩ
G = -2
Rf = 1kΩ
Magnitude (1dB/div)
Frequency (MHz)
0.1 110 100
CL = 100pF
Rs = 100Ω
CL = 50pF
Rs = 100Ω
CL = 10pF
Rs = 0Ω
CL = 20pF
Rs = 100Ω
+
-1kΩ
1kΩ
Rs
CLRL
Magnitude (1dB/div)
Frequency (MHz)
0.1 110 100
RL = 1kΩ
RL = 10kΩ
RL = 100Ω
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 7 / 17 Rev 1B.R
Typical Performance Characteristics
TA = 25°C, VS = +5V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted.
2nd & 3rd Harmonic Distortion at VS = 2.7V Frequency Response vs. Temperature
2nd Harmonic Distortion vs VOUT 3rd Harmonic Distortion vs VOUT
Frequency Response vs. VOUT Open Loop Gain & Phase vs. Frequency
Magnitude (1dB/div)
Frequency (MHz)
0.1 110 100
Vo = 1Vpp
Vo = 2Vpp
Vo = 4Vpp
Open Loop Gain (dB)
Frequency (Hz)
-10
0
10
20
30
-180
-135
-90
-45
0
40
50
60
70
80
90
1k100 10k 100k 1M 10M 100M
Open Loop Phase (deg)
Gain
Phase
Distortion (dBc)
Output Amplitude (Vpp)
0.5 11.5 2
1MHz
500kHz
100kHz
2.5
-90
-80
-70
-60
-50
-40
-30
-20
Distortion (dB)
Output Amplitude (Vpp)
0.5 1.0 1.5 2.0
1MHz
500kHz
100kHz
2.5
-90
-80
-70
-60
-50
-40
-30
-20
Distortion (dBc)
Frequency (MHz)
0123 4
3rd
RL = 1kΩ
5
3rd
RL = 150Ω
2nd
RL = 150Ω
2nd
RL = 1kΩ
-90
-80
-70
-60
-50
-40
-30
-20 Vo = 1Vpp
Frequency (MHz)
0.01 1100
100.1
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 8 / 17 Rev 1B.R
Typical Performance Characteristics
TA = 25°C, VS = +5V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted.
Small Signal Pulse Response at VS = 2.7V Small Signal Pulse Response at VS = 5V
Output Swing Output Voltage vs. Output Current
CMRR PSRR
CMRR (dB)
Frequency (Hz)
100 1k 10k 10M1M100k 100M
-100
-90
-80
-70
-60
0
-50
-40
-10
-30
-20
PSRR (dB)
Frequency (Hz)
100 1k 10k 10M1M100k 100M
-80
-70
-60
-50
-40
0
-30
-20
-10
Output Voltage (0.5V/div)
Time (1μs/div)
0
2.7
Output Voltage (0.6V/div)
Output Current (10mA/div)
50 0-50
-3
0
3
Output Voltage (20mV/div)
Time (10ns/div)
Output Voltage (20mV/div)
Time (10ns/div)
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 9 / 17 Rev 1B.R
Typical Performance Characteristics
TA = 25°C, VS = +5V, Rf = Rg = 1kΩ, RL = 1kΩ to VS/2; G = 2; unless otherwise noted.
Large Signal Pulse Response at VS = 5V Input Voltage Noise
Output Voltage (0.5V/div)
Time (10ns/div)
Voltage Noise (nV/
√Hz)
Frequency (MHz)
0.0001 0.001 0.01 0.1 1 10
0
10
30
20
40
50
60
70
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 10 / 17 Rev 1B.R
Application Information
General Description
The XR1008 family are a single supply, general purpose,
voltage-feedback ampliers fabricated on a complementary
bipolar process. The XR1008 offers 75MHz unity gain
bandwidth, 50V/μs slew rate, and only 505μA supply current.
It features a rail-to-rail output stage and is unity gain stable.
Figures 1, 2, and 3 illustrate typical circuit congurations for
non-inverting, inverting, and unity gain topologies for dual
supply applications. They show the recommended bypass
capacitor values and overall closed loop gain equations.
Figure 4 shows the typical non-inverting gain circuit for
single supply applications.
The common mode input range extends to 300mV below
ground in single supply operation. Exceeding these values
will not cause phase reversal. However, if the input voltage
exceeds the rails by more than 0.5V, the input ESD devices
will begin to conduct.
The design uses a Darlington output stage. The output
stage is short circuit protected and offers “soft” saturation
protection that improves recovery time.
+
-
Rf
0.1μF
6.8μF
Output
G = 1 + (Rf/Rg)
Input
+Vs
-Vs
Rg
0.1μF
6.8μF
RL
Figure 1: Typical Non-Inverting Gain Circuit
+
-
Rf
0.1μF
6.8μF
Output
G = - (Rf/Rg)
For optimum input offset
voltage set R1 = Rf || Rg
Input
+Vs
-Vs
0.1μF
6.8μF
RL
Rg
R1
Figure 2: Typical Inverting Gain Circuit
+
-
0.1μF
6.8μF
Output
G = 1
Input
+Vs
-Vs
0.1μF
6.8μF
RL
Figure 3: Unity Gain Circuit
+
-Rf
0.1μF
6.8μF
Out
In
+Vs
+
Rg
Figure 4: Single Supply Non-Inverting Gain Circuit
For optimum response at a gain of +2, a feedback resistor
of 1kΩ is recommended. Figure 5 illustrates the XR1008
frequency response with both 1kΩ and 2kΩ feedback
resistors.
Magnitude (1dB/div)
Frequency (MHz)
0.1 1 10 100
G = 2
RL = 1kΩ
Rf = 1kΩ
Rf = 2kΩ
Figure 5: Frequency Response vs. Rf
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 11 / 17 Rev 1B.R
Power Dissipation
Power dissipation should not be a factor when operating
under the stated 1kΩ load condition. However, applications
with low impedance, DC coupled loads should be analyzed
to ensure that maximum allowed junction temperature is
not exceeded. Guidelines listed below can be used to verify
that the particular application will not cause the device to
operate beyond it’s intended operating range.
Maximum power levels are set by the absolute maximum
junction rating of 150°C. To calculate the junction
temperature, the package thermal resistance value ThetaJA
(θJA) is used along with the total die power dissipation.
TJunction = TAmbient + (θJA × PD)
Where TAmbient is the temperature of the working
environment.
In order to determine PD, the power dissipated in the load
needs to be subtracted from the total power delivered by the
supplies.
PD = Psupply - Pload
Supply power is calculated by the standard power equation.
Psupply = Vsupply × IRMSsupply
Vsupply = VS+ - VS-
Power delivered to a purely resistive load is:
Pload = ((Vload)RMS2)/Rloadeff
The effective load resistor (Rloadeff) will need to include the
effect of the feedback network. For instance,
Rloadeff in Figure 3 would be calculated as:
RL || (Rf + Rg)
These measurements are basic and are relatively easy to
perform with standard lab equipment. For design purposes
however, prior knowledge of actual signal levels and load
impedance is needed to determine the dissipated power.
Here, PD can be found from
PD = PQuiescent + PDynamic - Pload
Quiescent power can be derived from the specied IS values
along with known supply voltage, Vsupply. Load power can
be calculated as above with the desired signal amplitudes
using:
(Vload)RMS = Vpeak / √2
( Iload)RMS = ( Vload)RMS / Rloadeff
The dynamic power is focused primarily within the output
stage driving the load. This value can be calculated as:
PDynamic = (VS+ - Vload)RMS × ( Iload)RMS
Assuming the load is referenced in the middle of the power
rails or Vsupply/2.
The XR1008 is short circuit protected. However, this may not
guarantee that the maximum junction temperature (+150°C)
is not exceeded under all conditions. Figure 6 shows the
maximum safe power dissipation in the package vs. the
ambient temperature for the packages available.
0
0.5
1
1.5
-40 -20 020 40 60 80 100 120
Maximum Power Dissipation (W)
Ambient Temperature (°C)
MSOP-8
SOIC-8
TSOT-5
Figure 6. Maximum Power Derating
Driving Capacitive Loads
Increased phase delay at the output due to capacitive loading
can cause ringing, peaking in the frequency response, and
possible unstable behavior. Use a series resistance, RS,
between the amplier and the load to help improve stability
and settling performance. Refer to Figure 7.
+
-
Rf
Input
Output
Rg
Rs
CLRL
Figure 7. Addition of RS for Driving Capacitive Loads
Table 1 provides the recommended RS for various capacitive
loads. The recommended RS values result in approximately
<1dB peaking in the frequency response.
CL (pF) RS (Ω) -3dB BW (MHz)
10pF 0 22
20pF 100 19
50pF 100 12
100pF 100 10.2
Table 1: Recommended RS vs. CL
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 12 / 17 Rev 1B.R
For a given load capacitance, adjust RS to optimize the
tradeoff between settling time and bandwidth. In general,
reducing RS will increase bandwidth at the expense of
additional overshoot and ringing.
Overdrive Recovery
For an amplier, an overdrive condition occurs when the
output and/or input ranges are exceeded. The recovery time
varies based on whether the input or output is overdriven
and by how much the ranges are exceeded. The XR1008,
and XR2008 will typically recover in less than 20ns from
an overdrive condition. Figure 5 shows the XR1008 in an
overdriven condition.
Output Voltage (1V/div)
Input Voltage (0.5V/div)
Time (200ns/div)
G = 5 Output
Input
Figure 8: Overdrive Recovery
Layout Considerations
General layout and supply bypassing play major roles in high
frequency performance. Resurgent has evaluation boards to
use as a guide for high frequency layout and as an aid in
device testing and characterization. Follow the steps below
as a basis for high frequency layout:
Include 6.8µF and 0.1µF ceramic capacitors for power supply
decoupling
Place the 6.8µF capacitor within 0.75 inches of the power pin
Place the 0.1µF capacitor within 0.1 inches of the power pin
Remove the ground plane under and around the part,
especially near the input and output pins to reduce parasitic
capacitance
Minimize all trace lengths to reduce series inductances
Refer to the evaluation board layouts below for more
information.
Evaluation Board Information
The following evaluation boards are available to aid in the
testing and layout of these devices:
Evaluation Board # Products
CEB002 XR1008 in TSOT
CEB003 XR1008 in SOIC
CEB006 XR2008 in SOIC
CEB010 XR2008 in MSOP
Evaluation Board Schematics
Evaluation board schematics and layouts are shown in
Figures 9-18 These evaluation boards are built for dual-
supply operation. Follow these steps to use the board in a
single-supply application:
1. Short -VS to ground.
2. Use C3 and C4, if the -VS pin of the amplier is not
directly connected to the ground plane.
Figure 9. CEB002 & CEB003 Schematic
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 13 / 17 Rev 1B.R
Figure 10. CEB002 Top View
Figure 11. CEB002 Bottom View
Figure 12. CEB003 Top View
Figure 13. CEB003 Bottom View
Figure 14. CEB006 & CEB010 Schematic
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 14 / 17 Rev 1B.R
Figure 15. CEB006 Top View
Figure 16. CEB006 Bottom View
Figure 17. CEB010 Top View
Figure 18. CEB010 Bottom View
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 15 / 17 Rev 1B.R
Mechanical Dimensions
TSOT-5 Package
MSOP-8 Package
XR1008, XR2008
© 2018 Resurgent Semiconductor, LLC 16 / 17 Rev 1B.R
SOIC-8 Package
XR1008, XR2008
NOTICE
Resurgent Semiconductor reserves the right to make changes to the products contained in this publication in order to improve design, performance or reliability. Resurgent
Semiconductor assumes no responsibility for the use of any circuits described herein, conveys no license under any patent or other right, and makes no representation that the
circuits are free of patent infringement. Charts and schedules contained here in are only for illustration purposes and may vary depending upon a user’s specic application.
While the information in this publication has been carefully checked; no responsibility, however, is assumed for inaccuracies.
Resurgent Semiconductor does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be
expected to cause failure of the life support system or to signicantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Resurgent
Semiconductor receives, in writing, assurances to its satisfaction that: (a) the risk of injury or damage has been minimized; (b) the user assumes all such risks; (c) potential
liability of Resurgent Semiconductor is adequately protected under the circumstances.
Reproduction, in part or whole, without the prior written consent of Resurgent Semiconductor is prohibited.
© 2018 Resurgent Semiconductor, LLC 17 / 17 Rev 1B.R
For Further Assistance:
www.resurgentsemi.net
ESURGENT
S E M I C O N D U C T O R
Ordering Information
Part Number Package Green Operating Temperature Range Packaging Quantity Marking
XR1008 Ordering Information
XR1008IST5X TSOT-5 Ye s -40°C to +125°C 2.5k Tape & Reel TC
XR1008IST5MTR TSOT-5 Ye s -40°C to +125°C 250 Tape & Reel TC
XR1008IST5EVB Evaluation Board N/A N/A N/A N/A
XR1008ISO8X SOIC-8 Ye s -40°C to +125°C 2.5k Tape & Reel XR1008
XR1008ISO8MTR SOIC-8 Ye s -40°C to +125°C 250 Tape & Reel XR1008
XR1008ISO8EVB Evaluation Board N/A N/A N/A N/A
XR2008 Ordering Information
XR2008ISO8X SOIC-8 Ye s -40°C to +125°C 2.5k Tape & Reel XR2008
XR2008ISO8MTR SOIC-8 Ye s -40°C to +125°C 250 Tape & Reel XR2008
XR2008ISO8EVB Evaluation Board N/A N/A N/A N/A
XR2008IMP8X MSOP-8 Ye s -40°C to +125°C 2.5k Tape & Reel 2008
XR2008IMP8MTR MSOP-8 Ye s -40°C to +125°C 250 Tape & Reel 2008
XR2008IMP8EVB Evaluation Board N/A N/A N/A N/A
Moisture sensitivity level for all parts is MSL-1.
Revision History
Revision Date Description
1A June 2014 Initial Release
1B Sept 2014 Added XR1008 ESD, increased operating temperature range, updated package outline drawings, and removed
Preliminary note on XR1008.
1B.R July 2018 Updated to Resurgent Semiconductor.