© 2005 IXYS All rights reserved
G = Gate D = Drain
S = Source TAB = Drain
DS99390(04/05)
PolarHVTM HiPerFET
Power MOSFET
IXFH 18N60P
IXFV 18N60P
IXFV 18N60PS
N-Channel Enhancement Mode
Features
zInternational standard packages
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
VDSS VGS = 0 V, ID = 250 µA 600 V
VGS(th) VDS = VGS, ID = 4 mA 3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 400 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ600 V
VGS Continuous ±20 V
VGSM Tranisent ±30 V
ID25 TC= 25°C18A
IDM TC= 25°C, pulse width limited by TJM 54 A
IAR TC= 25°C18A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.2 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 360 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 250 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
PLUS220 & PLUS220SMD 4 g
G
S
D
PLUS220 (IXFV)
G
S
PLUS220SMD (IXFV-PS)
D (TAB)
D (TAB)
TO-247 AD (IXFH)
(TAB)
VDSS = 600 V
ID25 =18 A
RDS(on) ≤≤
≤≤
≤400 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤200 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = 0.5 ID25, pulse test 13 18 S
Ciss 3000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 250 pF
Crss 32 pF
td(on) 21 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns
td(off) RG= 5 Ω (External) 62 ns
tf22 ns
Qg(on) 85 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 21 nC
Qgd 46 nC
RthJC 0.35 K/W
RthCK (TO-247, PLUS220) 0.21 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 18 A
ISM Repetitive 54 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 18A
-di/dt = 100 A/µs
VR = 100V
QRM 1.0
ns
µC
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
L
L3
L2
L1
A1
E1
e
D1
E
b
D
c
A2
A
A3
L4
Terminals: 1-Gate 2-Drain
E
E1
D
L2
A
A1
L
1
L
L3
e2X b
c
A
2
L
4
3
E1
PLUS220SMD (IXFV-PS) Outline
D1
L
L3
L1
E1
e
E
b
D
c
A2
A1
A
L2
E1
E
L2
D
L3
L
L
1
3X b
2X e c
A
2
A1
A
E1
D1
PLUS220 (IXFV) Outline
Terminals: 1-Gate 2-Drain
200
TO-247 AD (IXFH) Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2005 IXYS All rights reserved
Fig. 1. Output Characteristics
@ 25
º
C
0
2
4
6
8
10
12
14
16
18
01 23 456 78
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 2. Output Characteristics
@ 125
º
C
0
5
10
15
20
25
30
35
40
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalized
I
D
= 18A
I
D
= 9A
V
GS
= 10V
Fig. 6. Drain Current vs . Case
Temperature
0
2
4
6
8
10
12
14
16
18
20
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
0 5 10 15 20 25 30 35 40 45
I
D
- Amperes
R
D S ( o n )
- Normalized
T
J
= 125
∫
C
T
J
= 25
∫
C
V
GS
= 10V
Fig. 3. Output Characteristics
@ 125
º
C
0
2
4
6
8
10
12
14
16
18
024681012141618
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 300V
I
D
= 9A
I
G
= 10mA
Fig. 7. Input Admittance
0
3
6
9
12
15
18
21
24
27
30
3.5 4 4.5 5 5.5 6 6.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125
∫
C
25
∫
C
-40
∫
C
Fig. 8. Transconductance
0
3
6
9
12
15
18
21
24
27
0 3 6 9 12 15 18 21 24 27 30
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
∫
C
25
∫
C
125
∫
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
S D
- Volts
I
S
- Amperes
T
J
= 125
∫
C
T
J
= 25
∫
C
Fig. 12. Forw ard-Bias
Safe Ope rating Are a
1
10
100
10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 150∫C
T
C
= 25∫C
R
D S( on)
Limit
10ms
25
µ
s
IXTH 18N60P
IXFV 18N60P IXFV 18N60PS
© 2005 IXYS All rights reserved
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.1 1 10 100 1000
Pulse Width - milliseconds
R ( t h ) J C
- ∫C / W
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS