NPN Silicon AF Transistors BC 635 ... BC 639 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 636, BC 638, BC 640 (PNP) 2 3 Type Marking Ordering Code BC 635 BC 637 BC 639 - Q68000-A3360 Q68000-A2285 Q68000-A3361 1 Pin Configuration 1 2 3 E C B Package1) TO-92 If desired, selected transistors, type BC 63 -10 (hFE = 63 ... 160), or BC 63 -16 (hFE = 100 ... 250) are available. Ordering codes upon request. 1) For detailed information see chapter Package Outlines. Siemens Aktiengesellschaft 347 5.91 BC 635 ... BC 639 Maximum Ratings Parameter Symbol Values BC 635 Unit BC 637 BC 639 Collector-emitter voltage VCE0 45 60 80 Collector-base voltage VCB0 45 60 100 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 90 C1) Ptot Junction temperature Tj Storage temperature range Tstg V A mA 0.8 (1) W 150 C - 65 ... + 150 Thermal Resistance Junction - ambient1) Rth JA Junction - case2) Rth JC 1) 2) 156 K/W 75 If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 C. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. Siemens Aktiengesellschaft 348 BC 635 ... BC 639 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 635 BC 637 BC 639 V(BR)CE0 Collector-base breakdown voltage IC = 100 A V(BR)CB0 BC 635 BC 637 BC 639 Emitter-base breakdown voltage IE = 10 A V(BR)EB0 Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 C ICB0 Emitter cutoff current VEB = 4 V IEB0 DC current gain IC = 5 mA; VCE = 2 V IC = 150 mA; VCE = 2 V1) IC = 500 mA; VCE = 2 V1) hFE Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter voltage1) IC = 500 mA; VCE = 2 V V 45 60 80 - - - - - - 45 60 100 - - - - - - 5 - - - - - - 100 20 A - - 100 nA nA - 25 40 25 - - - - 250 - VCEsat - - 500 mV VBE) - - 1 V fT - 100 - MHz AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz 1) Pulse test: t 300 s, D 2 %. Siemens Aktiengesellschaft 349 BC 635 ... BC 639 Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 30 V Permissible pulse load RthJA = f (tp) VCE = 2 V Collector current IC = f (VBE) Siemens Aktiengesellschaft 350 BC 635 ... BC 639 DC current gain hFE = f (IC) VCE = 2 V Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Transition frequency fT = f (IC) VCE = 10 V, f = 20 MHz Siemens Aktiengesellschaft 351 PNP Silicon AF Transistors BC 636 ... BC 640 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 635, BC 637, BC 639 (NPN) 2 3 Type Marking Ordering Code BC 636 BC 638 BC 640 - Q68000-A3365 Q68000-A3366 Q68000-A3367 1 Pin Configuration 1 2 3 E C B Package1) TO-92 If desired, selected transistors, type BC 6 -10 (hFE = 63 ... 160), or BC 6 -16 (hFE = 100 ... 250) are available. Ordering codes upon request. 1) For detailed information see chapter Package Outlines. Siemens Aktiengesellschaft 352 5.91 BC 636 ... BC 640 Maximum Ratings Parameter Symbol Values BC 636 Unit BC 638 BC 640 Collector-emitter voltage VCE0 45 60 80 Collector-base voltage VCB0 45 60 100 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 90 C1) Ptot Junction temperature Tj Storage temperature range Tstg V A mA 0.8 (1) W 150 C - 65 ... + 150 Thermal Resistance Junction - ambient1) Rth JA Junction - case2) Rth JC 1) 2) 156 K/W 55 If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 C. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. Siemens Aktiengesellschaft 353 BC 636 ... BC 640 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 636 BC 638 BC 640 V(BR)CE0 Collector-base breakdown voltage IC = 100 A V(BR)CB0 BC 636 BC 638 BC 640 Emitter-base breakdown voltage IE = 10 A V(BR)EB0 Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 C ICB0 Emitter cutoff current VEB = 4 V IEB0 DC current gain IC = 5 mA; VCE = 2 V IC = 150 mA; VCE = 2 V1) IC = 500 mA; VCE = 2 V1) hFE Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter voltage1) IC = 500 mA; VCE = 2 V V 45 60 80 - - - - - - 45 60 100 - - - - - - 5 - - - - - - 100 20 A - - 100 nA nA - 25 40 25 - - - - 250 - VCEsat - - 500 mV VBE - - 1 V fT - 100 - MHz AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz 1) Pulse test: t 300 s, D 2 %. Siemens Aktiengesellschaft 354 BC 636 ... BC 640 Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 30 V Permissible pulse load RthJA = f (tp) Collector current IC = f (VBE) VCE = 2 V Siemens Aktiengesellschaft 355 BC 636 ... BC 640 DC current gain hFE = f (IC) VCE = 2 V Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Transition frequency fT = f (IC) Siemens Aktiengesellschaft 356