107751695 - Agere Systems, Inc.

Data Sheet

November 2000

131-Type Long-Wavelength PIN Photodetector

The 131-Type PIN low-profile photodetector offers excellent

coupling stability based on Lucent Technologies

Microelectronics Group’s patented Advanced Lightwave

Platform technology.

Features

■

Wavelength: 1.1

m—1.6

■

Planar structure for high reliability

■

Low-proﬁle, 8-lead DIP package

■

Wide operating temperature range:

–40

C to +85

■

High optical coupling stability

■

Wide selection of ﬁber pigtails and connectors

available

■

High performance:

— High responsivity

— Very low dark current

— High optical input saturation level

— High speed for digital applications

— High linearity and low back reﬂections for ana-

log applications

Applications

Digital

■

Telecommunications:

— Fiber-in-the-loop (FITL) narrowband application

— SONET/SDH transmission systems

— Digital cellular

■

Datacom:

— Local area networks

— 1 Gbit/s ﬁbre channel

■

Military:

— Microwave systems

— Remote antennae

— Tactical communications

Analog

■

Analog systems:

— CATV trunk and loop

— Micro-/picocellular

— Microwave

■

Telecommunications:

— Fiber in the loop (FITL)

— Broadband

■

Military:

— Microwave systems

— Remote antennae

— Tactical communications

22 Lucent Technologies Inc.

Data Sheet

November 2000

131-Type Long-Wavelength PIN Photodetector

Description

The 131-Type photodetectors represent a family of low-

proﬁle, high-reliability pigtailed devices specially

engineered for the rigorous demands of either analog

applications or digital ﬁber-optic applications. These

photodetectors are based upon Lucent Technologies’

patented Advanced Lightwave Platform technology,

permitting high optical coupling stability and

unparalleled performance.

The low-proﬁle package is an 8-lead DIP that allows

pinout-equivalent replacements for lower-performance

coaxial-type packages. The low proﬁle makes it ideal

for close board-to-board spacing situations.

The 131-Type PIN Photodetectors contain a rear-

illuminated planar diode structure. Lucent Technologies

employs unique diode processing steps to achieve a

low capacitance and highly linear active area that

ensures a wide dynamic operating range . Responsivity

is typically >0.85 A/W with rise and fall times of <0.5 ns

at the 1.3

m wavelength.

Figure 1. Typical Bias Connection

This PIN’s construction involves a patented silicon

optical bench that supplies mechanical stability to the

ﬁber and directive channeling of input light. The

structure also allows it to handle strong levels of input

power. All ﬁber types are specially terminated inside

the package to minimize back reﬂections.

These PIN photodetectors perform effectively and

efﬁciently over the entire 1.1

m to 1.6

m long

wavelength range. They have been employed in a

number of div erse applications including digital cellular ,

remote monitoring, high-speed datacom, ﬁber-to-the-

curb, and CATV signaling.

Notes:

This equivalent circuit is intended as an aid for modeling the device/

package parasitics in order for the circuit designer to better match

impedance and optimize bandwidth performance.

Minimum parasitic effects can be achieved by connecting the PIN

cathode (N-side) to circuit ground, applying a negative voltage to the

PIN anode (P-side), and allowing the package voltage to float by

not

connecting the package ground to circuit ground.

Typical values are as follows:

= Bulk capacitance of the diode = 0.3 pF to 0.5 pF.

NSS

, R

PSS

= Bulk resistance of the contacts = 5

Ω

SBW

= Series inductance of P-side bond wire = 0.25 nH.

NSS

, C

PSS

= Substrate capacitance = 0.975 pF/0.28 pF, respectively.

NBW

, L

PBW

= Series inductance of the substrate to package lead

bond wire = 2.0 nH.

NPL

, C

PPL

= Package lead capacitance = 0.40 pF/0.46 pF,

respectively.

Figure 2. Equivalent ac Circuit for Analog

Applications

Figure 3. 8-Lead DIP Electrical Connections

1-928

RBIAS

VBIAS

(N-SIDE)

PIN CATHODE

RLOAD

PIN ANODE

(P-SIDE)

CAPACITOR

dc DECOUPLING

1-929

RNSS

RPSS (P-SIDE)

PIN ANODE

LNBW

LPBW

CNSS

CPSS

CNPL

CPPL

PACKAGE

GROUND

(N-SIDE)

PIN CATHODE

LSBW

CURRENT

SOURCE

1-698

4 3 2 1

5 6 7 8

GROUND (OPTIONAL)

TERMINAL N

TERMINAL P

Lucent Technologies Inc. 3

Data Sheet

November 2000 131-Type Long-Wavelength PIN Photodetector

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are

absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in

excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for

extended periods can adversely affect device reliability.

* The recommended reverse bias voltage is 5 V to 15 V.

Handling Precautions

Electrostatic Discharge

CAUTION:This device is susceptible to damage as a result of electrostatic discharge. Take proper

precautions during both handling and testing. Follow guidelines such as JEDEC Pub lication No.

108-A (Dec. 1988).

Although protection circuitry is designed into the device, take proper precautions to avoid exposure to ESD.

Lucent Technologies employs a human-body model (HBM) for ESD-susceptibility testing and protection-design

e valuation. ESD voltage thresholds are dependent on the critical parameters used to deﬁne the model. A standard

HBM (resistance = 1.5 k

Ω

, capacitance = 100 pF) is widely used and, therefore, can be used for comparison

purposes. The HBM ESD threshold presented here was obtained by using the following circuit parameters:

Parameter Symbol Min Max Unit

Operating Temperature Range T

–40 85

Storage Temperature Range T

stg

–40 90

F orward Voltage V

—0V

Re verse Voltage* V

—30V

Photocurrent — — 4 mA

Humidity — — 95 %

ESD Threshold — — >250 V

Parameter Value Unit

HBM Threshold 250 V

4 Lucent Technologies Inc.

Data Sheet

November 2000

131-Type Long-Wavelength PIN Photodetector

Electrical Characteristics

Minimum and maximum v alues are testing requirements. Typical values are f or inf ormational purposes only and are

not part of the testing requirements. Each device is provided with recommended operating conditions to achieve

speciﬁed performance. T

= 25

C, unless noted otherwise. Determinations made using a 50

Ω

load.

* The minimum capacitance conﬁguration occurs when the N-side of the PIN is grounded and a negative voltage is applied to the P-side, with

the package ﬂoating, not grounded (value reference only; not tested in manufacture).

Optical Characteristics

= 25

* Does not include rotary mechanical splice loss (index matching is recommended).

†Second-order linearity measured at 15 V bias. The two tones are chosen to lie in the interval f

> 50 MHz, f

< 200 MHz; or such that f

+ f

860 MHz and f

– f

= 50 MHz. See Figure 7 for typical bias response.

‡Third-order linearity measured at 8 V bias. The two tones chosen are f

= 135.0 MHz and f

= 189.25 MHz. See Figure 8 for typical bias

response.

Parameter Symbol Min Typ Max Unit

Capacitance (f < 900 MHz):

131 8-Lead DIP* — — 0.7 — pF

Rise/F all Time t

— <0.5 — ns

Dark Current I

— 1.0 5 nA

Re verse Voltage V

21530V

Parameter Symbol Min Typ Max Unit

Responsivity:

Type 1

Type 2

Type 3

0.75

0.85

0.90

0.85

0.92

0.95

—

A/W

Optical Back Reﬂection*:

Type 1

Type 2 —

——

—–35

–60 –20

–40 dB

Wavelength Range — 1.1 — 1.6

Linearity:

Type L1:

Second Order

†

Third Order

‡

Type L2:

Second Order

Third Order

Type L3:

Second Order

Third Order

Type L4:

Second Order

Third Order

Type L5:

Second Order

Third Order

—

–52

–65

–68

–70

–75

–80

—

–85

–48

–60

–63

–65

–70

–75

–80

dBc

Lucent Technologies Inc. 5

Data Sheet

November 2000 131-Type Long-Wavelength PIN Photodetector

Characteristic Curves

Figure 4. Responsivity as a Function of Wavelength

Figure 5. Typical Temperature Dependence of Dark

Current

Figure 6. Reverse I-V at 23

Figure 7. Second-Order Linearity, 1310 nm

Wavelength; 0 dBm Optical Received

Power; Two Tones @ 35% OMD per Tone

Figure 8. Third-Order Linearity, 1310 nm

Wavelength; 0 dBm Optical Received

Power; Two Tones @ 35% OMD per Tone

1-072

WAVELENGTH (µm)

RESPONSIVITY (A/W)

1.1 1.3 1.5 1.7

0.2

0.6

1.0

0.4

0.8

0.0

1-381

10–7

30 40 6050

10–8

10–9 20 80 90

Id (A) (@ –10 VBIAS)

TEMPERATURE (°C)

1-380

10 30 40 60020 50

–5

–6

–8

–9

REVERSE VOLTAGE (V)

Id (A)

–7

–10

–11

1-926

— f1 + f2

--- f2 – f1

dBc

BIAS VOLTAGE

–20

–40

–60

–80

–100

–10

–30

–50

–70

–90

2 4 6 8 10 12 14 16 18020

1-927

— 2f2 – f1

--- 2f1 + f2

dBc

BIAS VOLTAGE

–40

–60

–80

–100

–30

–50

–70

–90

2 4 6 8 10 12 14 16 18020

6 Lucent Technologies Inc.

Data Sheet

November 2000

131-Type Long-Wavelength PIN Photodetector

Reliability

Telcordia Technologies

is a registered trademark of Bell Communications Research, Inc.

Table 1. Test Qualiﬁcations

The 131-type PIN photodetectors have successfully passed the following qualiﬁcations and meet current

Telcordia

Technologies

* requirement TA-TSY-000468.

Test Conditions Sample Size Failure Criteria

Physical Dimensions MIL-STD-883C-2016 100 Visual

External Visual MIL-STD-883C-2009.8 100 Visual

Mechanical Shock MIL-STD-883C-2002.3

Condition B 11 Electrical/Optical

Variable Frequency Vibration MIL-STD-883C-2007.2

Condition A 11 Electrical/Optical

Solderability MIL-STD-883C-2003.6 11 (188 leads) Visual

Solvent Resistance MIL-STD-883C-2015.8 11 Visual

Temperature Cycling MIL-STD-883C-1010.7

–40

C to +85

C11 Electrical/Optical

High-temperature Operating Bias

(HTOB) MIL-STD-883C-1005.7

C, 2,000 hrs., –5 Vdc 25 Electrical/Optical

Temperature Humidity Bias MIL-STD-883C

C, 85% RH, –5 Vdc, 500 cycles 11 Electrical/Optical

Thermal Shock MIL-STD-883C-1011.9

–15

C to +85

C, 15 cycles 11 Electrical/Visual/

Optical

Moisture Resistance MIL-STD-883C-1004.7

RT, 90% RH at 65

C, 3 hrs., RT 11 Electrical/Visual/

Optical

Low-temperature Storage –70

C for 2,000 hrs. 11 Electrical/Optical

Fiber Pull

≥

1 kg, 3 times 11 Electrical/Optical

Electrostatic Discharge Human-body Model Class 1,

250 V max ——

Lucent Technologies Inc. 7

Data Sheet

November 2000 131-Type Long-Wavelength PIN Photodetector

Outline Diagram

Dimensions are in inches and (millimeters).

8-Lead DIP PIN Photodetector

Note: For mechanical holding, an optional restraining clip (not shown) is supplied with all 131-lead photodetectors at no additional charge.

0.140 (3.56)

0.300

(7.62)

0.100 (2.54) 0.110 (2.79)

0.175 (4.45) TYP

0.018—0.019

(0.46—0.48)

0.067

(1.70)

0.300

(7.62) (0.25 )

+0.51

–0.25

0.010

+0.002

–0.001

TYP

0.290

(7.37)

MAX

0.530 (13.46) MAX

0.93 (23.6) MAX

0.120 (3.05) DIA

BEND LIMITER

OR CRIMP TUBE SC SHOWN,

OTHERS AVAILABLE

1-709r.3

For additional information, contact your Microelectronics Group Account Manager or the following:

INTERNET:

http://www.lucent.com/micro

, or for Optoelectronics information,

http://www.lucent.com/micro/opto

E-MAIL:

docmaster@micro.lucent.com

N. AMERICA: Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103-3286

1-800-372-2447

, FAX 610-712-4106 (In CANADA:

1-800-553-2448

, FAX 610-712-4106)

ASIA PACIFIC: Microelectronics Group, Lucent Technologies Singapore Pte. Ltd., 77 Science Park Drive, #03-18 Cintech III, Singapore 118256

Tel. (65) 778 8833

, FAX (65) 777 7495

CHINA: Microelectronics Group, Lucent Technologies (China) Co., Ltd., A-F2, 23/F, Zao Fong Universe Building, 1800 Zhong Shan Xi Road,

Shanghai 200233 P. R. China

Tel. (86) 21 6440 0468

ext. 325

, FAX (86) 21 6440 0652

JAPAN: Microelectronics Group, Lucent Technologies Japan Ltd., 7-18, Higashi-Gotanda 2-chome, Shinagawa-ku, Tokyo 141, Japan

Tel. (81) 3 5421 1600

, FAX (81) 3 5421 1700

EUROPE: Data Requests: MICROELECTRONICS GROUP DATALINE:

Tel. (44) 7000 582 368

, FAX (44) 1189 328 148

Technical Inquiries: OPTOELECTRONICS MARKETING:

(44) 1344 865 900

(Ascot UK)

Lucent Technologies Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. No

rights under any patent accompany the sale of any such product(s) or information.

Printed in U.S.A.

November 2000

DS98-206LWP-1 (Replaces DS98-206LWP)

Data Sheet

November 2000

131-Type Long-Wavelength PIN Photodetector

Ordering Information

* SM = single mode (~9 µm core).

Price

Type Code Comcode Package Analog/

Digital Responsivity

Type Linearity Back

Reﬂection

Type Fiber*Connector

D 131D 106277502 8-lead Analog Type 2 L4 Type 2 SM None

D 131E 106557473 8-lead Analog Type 2 L3 Type 2 SM None

G 131G 106434277 8-lead Analog Type 1 L2 Type 2 SM None

L 131L 106864127 8-lead Analog Type 3 L5 Type 2 SM None

G 131P 106912082 8-lead Analog Type 1 L2 Type 2 SM FC-APC

D 131R 106953847 8-lead Analog Type 2 L4 Type 2 SM FC-PC

D 131S 106953854 8-lead Analog Type 2 L4 Type 2 SM FC-APC

G 131T 106953862 8-lead Analog Type 1 L2 Type 2 SM FC-PC

AA 131AA 107230047 8-lead Analog Type 2 L4 Type 2 SM FC-SPC

AA 131AD 107232845 8-lead Analog Type 2 L4 Type 2 SM SC-SPC

AA 131AH 107689689 8-lead Analog Type 2 L3 Type 2 SM FC-APC

D 131AJ 107751695 8-lead Analog Type 2 L3 Type 2 SM SC-APC

AA 131AM 107874943 8-lead Analog Type 2 L3 Type 2 SM SC-APC

AA 131AU 108108465 8-lead Analog Type 2 L3 Type 2 SM E-2000

N 131N 106864135 8-lead Digital Type 1 NA Type 2 SM None

N 131AE 107232852 8-lead Digital Type 1 NA Type 2 SM SC-SPC

N 131AF 107232860 8-lead Digital Type 1 NA Type 2 SM FC-SPC

N 131AW 108108473 8-lead Digital Type 1 NA Type 2 SM E-2000