BAT42W-V, BAT43W-V
Document Number 85661
Rev. 1.6, 05-Aug-10
Vishay Semiconductors
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17431
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Small Signal Schottky Diodes
Features
These diodes feature very low turn-on
voltage and fast switching. These devices
are protected by a PN junction guard ring
against excessive voltage, such as
electrostatic discharges
These diodes are also available in the DO-35
case with the type designations BAT42 to
BAT43 and in MiniMELF SOD-80 case with the
type designations LL42 to LL43
For general purpose applications
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Part Ordering code Type Marking Remarks
BAT42W-V BAT42W-V-GS18 or BAT42W-V-GS08 L2 Tape and Reel
BAT43W-V BAT43W-V-GS18 or BAT43W-V-GS08 L3 Tape and Reel
Parameter Test condition Symbol Value Unit
Repetitive peak reverse voltage VRRM 30 V
Forward continuous current IF2001) mA
Repetitive peak forward current tp < 1 s, δ < 0.5 IFRM 5001) mA
Surge forward current tp < 10 ms IFSM 41) A
Power dissipation1) Tamb = 65 °C Ptot 2001) mW
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Document Number 85661
Rev. 1.6, 05-Aug-10
BAT42W-V, BAT43W-V
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
1) Pulse test tp < 300 µs, tp/T < 0.02
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air RthJA 3001) K/W
Junction temperature Tj125 °C
Ambient operating temperature range Tamb - 55 to + 125 °C
Storage temperature range Tstg - 55 to + 150 °C
Parameter Test condition Part Symbol Min Typ. Max Unit
Reverse breakdown voltage IR = 100 µA (pulsed) V(BR) 30 V
Leakage current1) VR = 25 V IR0.5 µA
VR = 25 V, Tj = 100 °C IR100 µA
Forward voltage1)
IF = 200 mA VF1000 mV
IF = 10 mA BAT42W-V VF400 mV
IF = 50 mA BAT42W-V VF650 mV
IF = 2 mA BAT43W-V VF260 330 mV
IF = 15 mA BAT43W-V VF450 mV
Diode capacitance VR = 1 V, f = 1 MHz CD7pF
Reverse recovery time IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 Ωtrr 5ns
Rectification efficieny RL = 15 kΩ, CL = 300 pF,
f = 45 MHz, VRF = 2 V ηv80 %
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
200
18442 Tamb - Ambient Temperature (°C)
250
200
150
100
50
50 100 1500
0
Ptot - Power Dissipation (mW)
Figure 2. Typical Forward Characteristics
18443
120010008006004002000
I- Forward Current (mA)
F
1000
100
10
1
0.1
0.01
VF- Instantaneous Forward Voltage (mV)
25 °C
125 °C - 40 °C
BAT42W-V, BAT43W-V
Document Number 85661
Rev. 1.6, 05-Aug-10
Vishay Semiconductors
www.vishay.com
3
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Package Dimensions in millimeters (inches): SOD-123
Figure 3. Typical Reverse Characteristics
1000
100
10
1
0.1
0.01
18444
0 1020304050
V
R
- Reverse Voltage (V)
125 °C
100 °C
75 °C
50 °C
25 °C
I - Reverse Leackage Current (µA)
R
Figure 4. Typical Capacitance vs. Reverse Voltage
18445
14
12
10
8
6
4
2
0
0102030
VR- Reverse Voltage (V)
C - Diode Capacitance (pF)
D
51525
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
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Revision: 12-Mar-12 1Document Number: 91000
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