3875081 GE SOLID STATE O1 DE 3675081 0017253 0 Lop-ss2z7) varington Power Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A (2N6530, 2N6532) Gain of 1000 at 3 A (2N6533) Gain of 500 at 3 A (2N6531) Features: Applications: (FLANGE) C) B Operate from IC with- = Power switching out predriver o Low leakage at high = Series and shunt regulators temperature s Audio amplifiers The RCA-2N6530, 2N6531, 2N6532, and 2N6533 are monolithic n-p-n silicon Darlington transistors designed for power applications at low and medium frequencies. The construction of these devices provides good forward- bias second-breakdown characteristics. Their high gain allows them to be driven directly from integrated circuits. These devices are supplied in the JEDEC TO-220AB (VERSAWATT) plastic package. Hammer drivers TOP VIEW TERMINAL DESIGNATIONS g2cs-39969 JEDEC TO-220AB a2s-24605 Fig. 1Schematie diagram for all types. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6530 2N6531 2N6532 2N6533 *VcoBo rs 80 100 100 120 Vcer(sus) Rgp= 00% . 2. 2. we ee 80 100 100 120 Veeolsus) 2. 1. we ee 80 100 100 120 Vegy(sus) Vee = -15 Vin ns we ew ew ae 80 100 100 120 "Vego - ee ee 5 5 5 MWe 8 8 8 8 ome 2 ee ee 15 15 . 18 15 Ip oe eee et ee 0.25 0.25 0.25 0.25 Pr Upto2mC. . 2. we & 6 6 6 Above 25C, 2... 1.) see Fig. 3 Ty Tyg 6 a 65 10 4150 "TL At distances 2 1/8 in. (3.17 mm) fromcasefor?10smax. . . . . 235 * In accordance with JEDEC registration data format JS-6, RDF-4. >rPr< < < = c C 255 0795 A-06o1 De ff 3a750a1 Oo17254 2 i Sib iba pb Pee ae? kh Wu... - "3875081 G E SOLID STATE Darlington Power Transistors 2N6530, 2N6531, 2N6532, 2N6533 ELECTRICAL CHARACTERISTICS, At Case Temperature (To) = 25C unless ' otherwise specified TEST CONDITIONS LIMITS ' CHARACTERISTIC | VOLTAGE | CURRENT ! UN SYMBOL Vide Ads 2N6530 2N6531 ITS : Vce VBE le Ip Min. Max. Min. Max. , 80 0 - 1 - = cEO 100 0 - = = i T go | -1.5 - 0.5 - - mA CEV 100 | -1.5 - - - | 05 . 80 | -1.5 _ 5 _ - Te = 125C 100 | -1.5 - - - 5 lego 5 0 - 5 - 5 mA 3 5a 1,000 } 10,000 | ~ _ *ihee 3 33 - - 500 }10,000 3 ga 100 | 5,000 | 100 | 5,00 Vegolsus) 02] 0 gob - tooo | Vcer(sus) 0.2 gob - Cn Vv Ree = 100 2 "| Voeylsus) -1.5 | 0.2 a i toob | - 3 5a - 28 - - Vee 3 38 - - - 2.8 Vv 3 84 - 45 - j4s* 32 10.006 | - - 3 Voce lsath 5? | 0.01] - 2 ~ - Vv 84 | 0.08 | 3 - 3 58 - - - |4 Ve a ~ 5 - _ Vv hfe f= 1 kHe 5 1 1,000 - 1,000] a lhee| ts Mie 5 1 20 - 20 - Cobo Vop= 10V ~ 200 | 200 | pF f= 1 MHz * 'Sfp _ _ D 08s, 24 27 27 A nonrep. Raic - 1,92 fis2 | cw * tm accordance with JEDEC registration data format JS-6, ROF-4, 3 Pulsed, pulse duration = 300 ys, duty factor S 2%, CAUTION: Sustaining voltages Vogo (sus), Veerisusl, and Vogylsus) MUST NOT be measured on acurve tracer. . 256 ~ 0796 A-07?Ol DEW 3875081 oouress 4 U 3875081 GE SOLID STATE " ote 17258 pb /T33729 vurungion rower Transistors 2N6530, 2N6531, 2N6532, 2N6533 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C unless - otherwise specified TEST CONDITIONS LIMITS CHARACTERISTIC| VOLTAGE | CURRENT . en Vde Ado 2N6532 2N6533 UNITS VceE Vee! Ic Ig Min. Max. Min, | Max, \ 420 0 ~ _ - 1 CEO 100 0 - 1 - - | 120 | -1.5 - - - | 08 A CEV 4oo | 1.5 - 0.5 - -~ | . _ ange 120 ] -1.5 - - - 5 To= 126 foo | -1.5 - 5 - ~ 3 3a - - 1,000 |10,000' lhee 3 54 1,000 } 10,000} - 3 82 100 | 5,000 | 100 | 5,000 Veo (sus) 0.2] 0 1oob | 1206) Vocer (sus) b _ bi Rie = 100.2 0.2 100 120! Vv "| Vcgy(sus) 1.5| 0.2 100? | ~ 1206] 3 3a ~ - - |28 VBE 3 5a _ 2.8 - - Vv 3 ga - 4.6* - 4.5 . 32 | 0,006 | _ - 2 | Vee lsat) 54 |] 0.01 | 2 - - Vv 8? | oos | 3 - 3 a _- _- - Ve a _ 7 yey hte f= 1 kHz 6 1 1,000 | | 1,000} -f . lh tel fet MHz 5 1 20 - 20 | Cobo Vog = 10V - 200 ~ | 200 | pF f=1MHz sip t= 05s, 24 2.7 - 27) - A nonrep. Rasc ~ 1.92 ~ 1.92 | C/W * In accordance with JEDEC registration data format JS-6, RDF-4, ' | 4 Pulsed, pulse duration = 300 us, duty factor < 2%. sy b CAUTION: Sustaining voltages Veggtsus), Vega (sus), and Vegy(sus) MUST NOT be measured . onacurve tracer. 257 0797 A-08oo. Darlington Power Transistors 3875081 GE SOLID STATE ode 17256 0 T BB27 2N6530, 2N6531, 2N6532, 2N6533 TEMPERATURE (To }*25C MUST BE DERATED LINEARLY INCREASE IN TEMPERATURE) 3 H FOR SINGLE NONREPETITIVE COLLECTOR CURRENT (Ip)-A 4 A S Veg (MAX.1 60 V (2N6530) Veeo (MAX.1 #100 V (2N6531, vi (MAX.] #120 V (2N6533} 4 6 8 io 2 4 6 20, 4J20 2 COLLECTOR-TO-EMITTER VOLTAGE (VcE)V 92CS-24603R1 Fig. 2~Maximum operating areas for all types at casa tamperatura of 25C. OTE: CURRENT DERATING AT CONSTANT VOLTAGE APPLIES i AND I. a CURRENT (Ig) 1A VOLTAGE (Vee) SV TEMPERATURE (Te) 25C. QALY TO THE OfSS'PATION-LIMITED PORTH py LIMITED PORTION OF MAXIMUM-OPERATING- 00 NOT ERATE THE SPECIFIED VALUE FOR Ig MAX, 38 # 2a g & CASE TEMPERATURE (Te]"C oo al 92C8-24105 FREQUENCY (C)-MHZ 2205-24607 Fig. 3--Dissipation derating curve for all types. Fig. 4 Typical small-signal current gain for all types, 258 _ 0798 A-09OL DEM 3875081 oo1z2as? TU 3875081 G oo O1E 17257. 0 13327 Darlington Power Transistors = E SOLID STATE Fig. 5 Typical de beta characteristics for all types. 2N6530, 2N6531, 2N6532, 2N6533 COLLECTOR -TO-EMITTER VOLTAGE [Vc h3V. GOLLECTOR-TO-EMITTER VOLTAGE (ce}* 3 x te BASE CURRENT (g) ma v fs g x @ & s 5 z 3 e & : & & & s a @ g 3 $ 2 2 aq 5, % ol 100 @ASE-TO-EMITTER VOLTAGE (Vgc) V A2CS-2400781 trCa-t461dAR Fig, 6 Typical input characteristics for all types. 8] CASE TEMPERATURE (Te )= (00C ia 6 L 0 COLLECTOR CURRENT (Ig] & Ig (MAX) PULSED THON no = * FoR SINGLE NONREPETITIVE PULSE < I e H a 5 a x 5 o % 3 a 4 a 3 o nH @ > Voeg ( MAX.}2 80 V (2N6530} Veeo (MAX.) 3100 V (2N6531, 2N6532) vi (MAX. 120 V (2N6533) 2 4 6 8 2 4 6 1120 2 4 6 COLLECTOR-TO-EMITTER VOLTAGE (Vcog)-V 9208-24604 Ri Fig. 7 Maximum operating areas for all types at case temperature of 100C. . 259 0799 oaO1 DE ff 3875081 0017258 oO Z 3875061 GE SOLID STATE iE 1 oS Darlington Power Transistors __ 7258 DT" 33 27 2N6530, 2N6531, 2N6532, 2N6533 sfc aes] ; t eRaahs 3 % helee S oma + | 8 RE 45 ee FR, EERE = 3 Ee b ea E Ee 3 9 Zz s 10 iz i a 6 8 COLLECTOR -T0-EMIT TER VOLTAGE Nicelh COLLECTOR CURRENT {Ie} A 4208-2464 9205-2460 Fig. 8 Typical output characteristics for all types. Fig. 9 Typical saturation characteristics for all types. COLLECTOR -TO-EMITTER VOLTAGE [Ve_]*3 Veg* 20 OUTPUT TO OSCILLOSCOPE t (TEKTRONIX MODEL Ree to 84 3 INPUT 2-29 Of EQUIVALENT} 2 cHRonerics pulse = T8,* z GENERATOR MOCEL . No. PG~31, ON = EQUIVALENT Ba L DARLINGTON TRANSISTOR 3 UROER TEST PULSE DURATION - Fig#200 Ag 20 na POSITIVE VOLTAGE 20 pa NEGATIVE VOLTAGE REP, HATE #200 He 1 2 3 Tay ANO Te2 ARE MEASURED WITH TEKTRONIX CURRENT BASE-TO-EMITTER VOLTAGE (Vac)V PROBE FSOIS AND TYPE 134 AMPLIFIER, OR EQUIVALENT G2CS+24G2 RL 9205-24618 Fig. 10 Typical transfer characteristics for all types. Fig. 11 - Circuit used to measure saturated switching-times. | 4 om COLLECTOR SUPPLY VOLTAGE (Yocht20 Ta totp tte 4300 3 3 2 = bot GUTPUT WAVE FORM COLLECTOR CURRERT at) aA stct-seHeat HCS-24uT Fig. 12 Typical saturated switching-time Fig. 19 Phase relationship between input current and characterictics for all types. output current, showing reference points for specitication of switching-times. 260 WC - 80 Avil