2SK3588-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof See to p4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Ratings 100 70 73 292 30 73 319.2 20 5 2.02 270 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) Operating and storage Tch C temperature range Tstg C *1 L=71.9H, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *2 Tch < =150C *3 IF< = BVDSS, Tch < = 150C *4 VDS < = -ID, -di/dt=50A/s, Vcc < =100V *5 VGS=-30V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS=100V VGS=0V Tch=125C VDS=80V VGS=0V VGS=30V VDS=0V ID=25A VGS=10V ID=25A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=25A VGS=10V Min. 15 RGS=10 V CC =50V ID=50A VGS=10V L=71.9H Tch=25C IF=50A VGS=0V Tch=25C IF=50A VGS=0V -di/dt=100A/s Tch=25C Typ. 100 3.0 10 19 30 1830 460 38 20 35 50 23 52 16 18 Max. 5.0 25 250 100 25 2745 690 57 30 53 75 35 78 24 27 73 1.10 0.1 0.4 1.65 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/denshi/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.463 75.0 Units C/W C/W 1 2SK3588-01L,S,SJ FUJI POWER MOSFET Characteristics 400 Allowable Power Dissipation PD=f(Tc) 800 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V IAS=30A 350 700 300 600 IAS=44A 500 EAS [mJ] PD [W] 250 200 400 IAS=73A 150 300 100 200 50 100 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 starting Tch [C] Tc [C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 200 20V 10V 100 160 ID[A] ID [A] 120 8V 10 7.5V 80 1 7.0V 6.5V 40 6.0V 0.1 VGS=5.5V 0 0 2 4 6 8 10 12 0 1 2 3 VDS [V] 4 5 6 7 8 9 10 VGS[V] Typical Transconductance Typical Drain-Source on-state Resistance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 100 0.15 VGS= 5.5V 6.0V 6.5V 7.0V 0.12 7.5V gfs [S] RDS(on) [ ] 10 0.09 8V 0.06 10V 1 0.03 20V 0.1 0.1 1 10 100 0.00 ID [A] 0 40 80 120 160 200 ID [A] http://store.iiic.cc/ 2 2SK3588-01L,S,SJ 60 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=25A,VGS=10V 7.0 Gate Threshold Voltage vs. Tch A VGS(th)=f(Tch):VDS=VGS,ID=250 6.5 6.0 50 5.5 max. VGS(th) [V] RDS(on) [ m ] 5.0 40 max. 30 4.5 4.0 3.5 3.0 min. 2.5 20 typ. 2.0 1.5 10 1.0 0.5 0.0 0 -50 -25 0 25 50 75 100 125 -50 150 -25 0 25 Tch [C] 50 75 100 125 150 Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=50A, Tch=25C 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 14 12 Ciss 10 Vcc= 50V 0 C [nF] VGS [V] 10 8 Coss 6 10 -1 4 2 Crss 0 0 20 40 60 10 80 -2 -1 10 10 0 Qg [nC] 10 1 2 10 VDS [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID IF=f(VSD):80s Pulse test,Tch=25C t=f(ID):Vcc=48V, VGS=10V, RG=10 100 10 3 tf 10 2 10 1 td(off) tr t [ns] IF [A] 10 td(on) 1 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 -1 VSD [V] 10 0 10 1 10 2 ID [A] http://store.iiic.cc/ 3 Avalanche Current I AV [A] 2SK3588-01L,S,SJ 10 3 10 2 10 1 10 0 FUJI POWER MOSFET Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25C,Vcc=48V Single Pulse -1 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 2 3 1 4 2 3 1 2 3 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4