1
80V, 500mA, 3-Phase MOSFET Driver
HIP4086, HIP4086A
The HIP4086 and HIP4086A (referred to as the HIP4086/A) are
three phase N-Channel MOSFET drivers. Both parts are
specifically targeted for PWM motor control. These drivers have
flexible input protocol for driving every possible switch
combination. The user can even override the shoot-through
protection for switched reluctance applications.
The HIP4086/A have a wide range of programmable dead times
(0.5ms to 4.5ms) which makes them very suitable for the low
frequencies (up to 100kHz) typically used for motor drives.
The only difference between the HIP4086 and the HIP4086A is
that the HIP4086A has the built-in charge pumps disabled. This
is useful in applications that require very quiet EMI performance
(the charge pumps operate at 10MHz). The advantage of the
HIP4086 is that the built-in charge pumps allow indefinitely long
on times for the high-side drivers.
To insure that the high-side driver boot capacitors are fully
charged prior to turning on, a programmable bootstrap refresh
pulse is activated when VDD is first applied. When active, the
refresh pulse turns on all three of the low-side bridge FETs while
holding off the three high-side bridge FETs to charge the
high-side boot capacitors. After the refresh pulse clears, normal
operation begins.
Another useful feature of the HIP4086/A is the programmable
undervoltage set point. The set point range varies from 6.6V to
8.5V.
Features
• Independently drives 6 N-Channel MOSFETs in three phase
bridge configuration
• Bootstrap supply max voltage up to 95VDC with bias supply
from 7V to 15V
• 1.25A peak turn-off current
• User programmable dead time (0.5µs to 4.5µs)
• Bootstrap and optional charge pump maintain the high-side
driver bias voltage.
• Programmable bootstrap refresh time
• Drives 1000pF load with typical rise time of 20ns and Fall
Time of 10ns
• Programmable undervoltage set point
Applications
• Brushless Motors (BLDC)
•3-phase AC motors
• Switched reluctance motor drives
•Battery powered vehicles
•Battery powered tools
Related Literature
•AN9642 “HIP4086 3-Phase Bridge Driver Configurations and
Applications”
FIGURE 1. TYPICAL APPLICATION FIGURE 2. CHARGE PUMP OUTPUT CURRENT
Controller
AHO
CLO
BLO
ALO
CHO
BHO
CLI
BLI
ALI
CHI
BHI
AHI CHS
AHS
BHS
CHB
AHB
BHB
VDD
RDEL
VDD
Speed
Brake
Battery
24V...48V
HIP4086/A
VSS
-60 -40 -20 0 20 40 60 80 100 120 140 160
200
150
100
50
0
JUNCTION TEMPERATURE (°C)
OUTPUT CURRENT (µA)
VxHB - VxHS = 10V
September 27, 2012
FN4220.8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas Inc. 2011. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
HIP4086, HIP4086A
2FN4220.8
September 27, 2012
Block Diagram (for clarity, only one phase is shown)
RDEL 7
xLI 4
RFSH 9
UVLO 8
VDD 20
DIS 10
xHI 5
2 uSec
Delay
Refresh
Pulse
Under
Voltage
Detector
10 nSec
delay
Adjustable
Turn-on
Delay
Level
Shifter
Charge
Pump*
xHO17
xHB
16
xHS
18
xLO21
VSS
6
VDD
100 mV
VDD
*The cha rge pump is
permanently disabled
in the HIP4086A.
common with
all phases
common with
all phases
common with
all phases
common with
all phases
EN
If the voltage on RDEL is less than 100 mV, the
turn-on delay timers are disabled and the high and
low-side drivers can be turned on simultaneously.
If under voltage is active or if
DIS is asserted, the high and
low-side drivers are turned off.
Adjustable
Turn-on
Delay
delay disable
drive enable
Truth Table
INPUT OUTPUT
ALI, BLI, CLI AHI, BHI, CHI UV DIS RDEL ALO, BLO, CLO AHO, BHO, CHO
XXX1X00
XX1XX00
1 X 0 0 >100mV 1 0
0000X01
0100X00
1 0 0 0 <100mV 1 1
NOTE: X signifies that input can be either a “1” or “0”.
HIP4086, HIP4086A
3FN4220.8
September 27, 2012
Pin Configuration
HIP4086, HIP4086A
(PDIP, SOIC)
TOP VIEW
1
BHB
2
BHI
3
BLI
4
ALI
5
AHI
6
VSS
7
RDEL
8
UVLO
9
RFSH
10
DIS
11
CLI
12
CHI
24 BHO
23 BHS
22 BLO
21 ALO
20 VDD
19 CLO
18 AHS
17 AHC
16 AHB
15 CHS
14 CHO
13 CHB
Pin Descriptions
PIN NUMBER SYMBOL DESCRIPTION
16
1
13
AHB
BHB
CHB
(xHB)
High-Side Bias Connections. One external bootstrap diode and one capacitor are required for
each. Connect cathode of bootstrap diode and positive side of bootstrap capacitor to each xHB
pin.
15
23
15
AHS
BHS
CHS
(xHS)
High-Side Source Connections. Connect the sources of the High-Side power MOSFETs to these
pins. The negative side of the bootstrap capacitors are also connected to these pins.
5
2
12
AHI
BHI
CHI
(xHI)
High-Side Logic Level Inputs. Logic at these three pins controls the three high side output
drivers, AHO (Pin 17), BHO (Pin 24) and CHO (Pin 14). When xHI is low, xHO is high. When xHI
is high, xHO is low. Unless the dead time is disabled by connecting RDEL (Pin 7) to ground, the
low side input of each phase will override the corresponding high side input on that phase -
see “Truth Table” on page 2. If RDEL is tied to ground, dead time is disabled and the outputs
follow the inputs with no shoot-thru protection. DIS (Pin 10) also overrides the high side inputs.
xHI can be driven by signal levels of 0V to 15V (no greater than VDD).
4
3
11
ALI
BLI
CLI
(xLI)
Low-Side Logic Level Inputs. Logic at these three pins controls the three low-side output
drivers ALO (Pin 21), BLO (Pin 22) and CLO (Pin 19). If the upper inputs are grounded then the
lower inputs control both xLO and xHO drivers, with the dead time set by the resistor at RDEL
(Pin 7). DIS (Pin 10) high level input overrides xLI, forcing all outputs low. xLI can be driven by
signal levels of 0V to 15V (no greater than VDD).
6V
SS Ground. Connect the sources of the Low-Side power MOSFETs to this pin.
7 RDEL Delay Time Set point. Connect a resistor from this pin to VDD to set timing current that defines
the dead time between drivers - see Figure 17. All drivers turn-off with minimal delay, RDEL
resistor prevents shoot-through by delaying the turn-on of all drivers. When RDEL is tied to VSS,
both upper and lowers can be commanded on simultaneously. While not necessary in most
applications, a decoupling capacitor of 0.1µF or smaller may be connected between RDEL and
VSS.
8 UVLO Under voltage Set point. A resistor can be connected between this pin and VSS to program the
under voltage set point, see Figure 18. With this pin not connected, the under voltage disable
is typically 6.6V. When this pin is tied to VDD, the under voltage disable is typically 6.2V.
9 RFSH Refresh Pulse Setting. An external capacitor can be connected from this pin to VSS to increase
the length of the start up refresh pulse - see Figure 16. If this pin is not connected, the refresh
pulse is typically 1.5µs.
10 DIS Disable Input. Logic level input that when taken high sets all six outputs low. DIS high
overrides all other inputs. With DIS low, the outputs are controlled by the other inputs. DIS can
be driven by signal levels of 0V to 15V (no greater than VDD).
HIP4086, HIP4086A
4FN4220.8
September 27, 2012
17
24
14
AHO
BHO
CHO
(xHO)
High-Side Outputs. Connect to the gates of the High-Side power MOSFETs in each phase.
20 VDD Positive Supply. Decouple this pin to VSS (Pin 6).
21
22
19
ALO
BLO
CLO
(xLO)
Low-Side Outputs. Connect the gates of the Low-Side power MOSFETs to these pins.
NOTE: x = A, B or C.
Pin Descriptions
PIN NUMBER SYMBOL DESCRIPTION
Ordering Information
PART NUMBER
(Notes 1, 3) PART MARKING
TEMP RANGE
(°C) CHARGE PUMP PACKAGE
PKG.
DWG. #
HIP4086AB HIP4086AB -40 to +125 Yes 24 Ld SOIC M24.3
HIP4086ABZ (Note 2) HIP4086ABZ -40 to +125 Yes 24 Ld SOIC (Pb-free) M24.3
HIP4086APZ (Note 2) HIP4086APZ -40 to +125 Yes 24 Ld PDIP (Pb-free) E24.3
HIP4086AABZ (Note 2) HIP4086AABZ -40 to +125 No 24 Ld SOIC (Pb-free) M24.3
NOTES:
1. Add “-T*”, suffix for tape and reel. Please refer to TB347 for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte
tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil
Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), please see device information page for HIP4086, HIP4086A. For more information on MSL, please see Technical
Brief TB363.
HIP4086, HIP4086A
5FN4220.8
September 27, 2012
Absolute Maximum Ratings Thermal Information
(Note 7)
Supply Voltage, VDD Relative to GND. . . . . . . . . . . . . . . . . . . . . -0.3V to 16V
Logic Inputs (xLI, xHI) . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3v to VDD + 0.3V
Voltage on xHS . . . . . . . . . . . . . . -6V (Transient) to 85V (-40°C to +150°C)
Voltage on xHB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VxHS - 0.3V to VxHS +VDD
Voltage on xLO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VSS - 0.3V to VDD +0.3V
Voltage on xHO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VxHS - 0.3V to VxHB +0.3V
Phase slew rate (on xHS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V/ns
Maximum Recommended Operating
Conditions
Supply Voltage, VDD Relative to GND. . . . . . . . . . . . . . . . . . . . . . . 7V to 15V
Logic Inputs (xLI, xHI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to VDD
Voltage on xHB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VxHS + VDD
Voltage on xHS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 80V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-40°C to +125°C
Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-40°C to +150°C
Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W)
SOIC Package (Notes 4, 6) . . . . . . . . . . . . . 75 22
SOIC Package HIP4086AABZ (Notes 5, 6) 51 22
PDIP* Package (Notes 4, 6) . . . . . . . . . . . . 70 29
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Junction Temp Range . . . . . . . . . . . . . . . . . . . .-40°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
*Pb-free PDIPs can be used for through-hole wave solder processing only.
They are not intended for use in Reflow solder processing applications.
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
5. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. For θJC, the “case temp” location is taken at the package top center.
7. Replace x with A, B, or C.
DC Electrical Specifications VDD = VxHB = 12V, VSS = VxHS = 0V, RDEL = 20k, RUV = ∞, Gate Capacitance (CGATE) = 1000pF,
unless otherwise specified. Boldface limits apply over the operating junction temperature range, -40°C to +150°C.
PARAMETER TEST CONDITIONS
TJ = +25°C TJ = -40°C TO +150°C
UNITS
MIN
(Note 9) TYP
MAX
(Note 9)
MIN
(Note 9)
MAX
(Note 9)
SUPPLY CURRENTS
VDD Quiescent Current xHI = 5V, xLI = 5V (HIP4086) 2.7 3.4 4.2 2.1 4.3 mA
xHI = 5V, xLI = 5V (HIP4086A) 2.3 2.4 2.6 2.1 2.7 mA
VDD Operating Current f = 20kHz, 50% Duty Cycle (HIP4086) 6.3 8.25 10.5 511mA
f = 20kHz, 50% Duty Cycle (HIP4086A) 3.1 3.6 4.1 2.8 4.4 mA
xHB On Quiescent Current xHI = 0V (HIP4086) - 40 80 - 100 µA
xHI = 0V (HIP4086A) 80 100 200 µA
xHB Off Quiescent Current xHI = VDD (HIP4086) 0.6 0.8 1.3 0.5 1.4 mA
xHI = VDD (HIP4086A) 0.8 0.9 1 0.7 1.2 mA
xHB Operating Current f = 20kHz, 50% Duty Cycle (HIP4086) 0.7 0.9 1.3 - 2.0 mA
f = 20kHz, 50% Duty Cycle (HIP4086A) 0.8 0.9 1 - 1.2 mA
xHB, xHS Leakage Current VxHS = 80V, VxHB = 93V 7 24 45 - 50 µA
Charge Pump, HIP4086 only, (Note 8)
QPUMP Output Voltage No Load 11.5 12.5 14 10.5 14.5 V
QPUMP Output Current VxHS = 12V, VxHB = 22V 50 100 130 - 140 µA
UNDERVOLTAGE PROTECTION
VDD Rising Undervoltage Threshold RUV open 6.2 7.1 8.0 6.1 8.1 V
VDD Falling Undervoltage Threshold RUV open 5.75 6.6 7.5 5.6 7.6 V
Minimum Undervoltage Threshold RUV = VDD 5 6.2 6.8 4.9 6.9 V
HIP4086, HIP4086A
6FN4220.8
September 27, 2012
INPUT PINS: ALI, BLI, CLI, AHI, BHI, CHI, AND DIS
Low Level Input Voltage - - 1.0 - 0.8 V
High Level Input Voltage 2.5 - - 2.7 -V
Input Voltage Hysteresis - 35 - - - mV
Low Level Input Current VIN = 0V -60 -100 -135 -55 -140 µA
High Level Input Current VIN = 5V -1 - +1 -10 +10 µA
GATE DRIVER OUTPUT PINS: ALO, BLO, CLO, AHO, BHO, AND CHO
Low Level Output Voltage (VOUT - VSS)I
SINKING = 30mA - 100 - - 200 mV
Peak Turn-On Current VOUT = 0V 0.3 0.5 0.7 - 1.0 A
NOTES:
8. the specified charge pump current is the total amount available to drive external loads across xHO and xHS.
9. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
AC Electrical Specifications VDD = VxHB = 12V, VSS = VxHS = 0V, CGATE = 1000pF, RDEL = 10k, unless otherwise specified.
Boldface limits apply over the operating junction temperature range, -40°C to +150°C.
PARAMETER TEST CONDITIONS
TJ = +25°C TJ = -40°C TO +150°C
UNITS
MIN
(Note 9) TYP
MAX
(Note 9)
MIN
(Note 9)
MAX
(Note 9)
TURN-ON DELAY AND PROPAGATION DELAY
Dead Time (Figure 3)
RDEL = 100k 3.8 4.5 6 37µs
RDEL = 10k 0.38 0.5 0.65 0.3 0.7 µs
Dead Time Channel Matching RDEL = 10k - 7 15 -20%
Lower Turn-Off Propagation Delay
(xLI to xLO turn-off) (Figure 3 or 4) No Load - 30 45 -65ns
Upper Turn-Off Propagation Delay
(xHI to xHO turn-off) (Figure 3 or 4) No Load - 75 90 -100ns
Lower Turn-On Propagation Delay
(xLI to xLO turn-on) (Figure 3 or 4) No Load - 45 75 -90ns
Upper Turn-On Propagation Delay
(xHI to xHO turn-on) (Figure 3 or 4) No Load - 65 90 -100ns
Rise Time CGATE = 1000pF -2040 -50ns
Fall Time CGATE = 1000pF -1020 -25ns
Disable Turn-Off Propagation Delay
(DIS to xLO turn-off) (Figure 5) -5580 -90ns
Disable Turn-Off Propagation Delay
(DIS to xHO turn-off) (Figure 5) -8090 -100ns
Disable to Lower Turn-On Propagation Delay
(DIS to xLO turn-on) (Figure 5) -5580 -100ns
Disable to Upper Enable
(DIS to xHO turn-on) (Figure 5)
RDEL = 10k, CRFSH
Open -2.0- --µs
DC Electrical Specifications VDD = VxHB = 12V, VSS = VxHS = 0V, RDEL = 20k, RUV = ∞, Gate Capacitance (CGATE) = 1000pF,
unless otherwise specified. Boldface limits apply over the operating junction temperature range, -40°C to +150°C. (Continued)
PARAMETER TEST CONDITIONS
TJ = +25°C TJ = -40°C TO +150°C
UNITS
MIN
(Note 9) TYP
MAX
(Note 9)
MIN
(Note 9)
MAX
(Note 9)
HIP4086, HIP4086A
7FN4220.8
September 27, 2012
Test Waveforms and Timing Diagrams
FIGURE 3. PROP DELAYS WITH PROGRAMMED TURN-ON DELAYS (RDEL CONNECTED TO VDD WITH A RESISTOR)
FIGURE 4. PROP DELAYS WITH NO PROGRAMMED TURN-ON DELAYS (RDEL CONNECTED TO VSS)
FIGURE 5. DISABLE FUNCTION
Dead
time
xLI to xLO
turn-on
+ delay
xLI to xLO
turn-off
xLI
xLO
xHO
xHI to xHO
turn-off
Dead
time
xHI
xLI to xLO
turn-off xLI to xHO
turn- off
xHI to xHO
turn-on
+ delay
xLI to xLO
turn-on
xLI to xLO
turn-off
xLI
xLO
xHO
xHI
xLI to xLO
turn-off xLI to xLO
turn-on
xLO and xHO are on
simulateously
xHI to xHO
turn-on xHI to xHO
turn-off xHI to xHO
turn-on
DIS
or
UV
xLO
xHO
xHI,
xLI
DIS to xLO
turn-o n
delay
xHO turn-on delay
refresh pulse
DIS to xHO
turn-off
delay
refresh pulse
DIS to xLO
turn-o n
delay
HIP4086, HIP4086A
8FN4220.8
September 27, 2012
Typical Performance Curves
FIGURE 6. VDD SUPPLY CURRENT vs VDD SUPPLY VOLTAGE FIGURE 7. VDD SUPPLY CURRENT vs SWITCHING FREQUENCY
FIGURE 8. FLOATING IXHB BIAS CURRENT FIGURE 9. OFF-STATE IXHB BIAS CURRENT
FIGURE 10. CHARGE PUMP OUTPUT CURRENT (HIP4086 only) FIGURE 11. CHARGE PUMP OUTPUT VOLTAGE(HIP4086 only)(
-60 -40 -20 0 20 40 60 80 100 120 140 160
2
3
4
5
6
JUNCTION TEMPERATURE (°C)
VDD SUPPLY CURRENT (mA)
VDD = 7V
VDD = 8V
VDD = 10V
VDD = 12V
VDD = 15V
VDD = 16V ALL GATE CONTROL INPUTS = 5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
10
15
20
25
30
JUNCTION TEMPERATURE (°C)
VDD SUPPLY CURRENT (mA)
200kHz
CGATE = 1000pF
20kHz
50kHz
100kHz
10kHz
0 20 40 60 80 100 120 140 160 180 200
0
1000
2000
3000
4000
SWITCHING FREQUENCY (kHz)
FLOATING BIAS CURRENT (µA)
CGATE = NO LOAD
CGATE = 1000pF
TJ = +25°C
JUNCTION TEMPERATURE (°C)
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
BIAS CURRENT (mA)
VDD = 10V
VDD = 12V
VDD = 15V
VDD = 7V
VDD = 8V
-60 -40 -20 0 20 40 60 80 100 120 140 160
200
150
100
50
0
JUNCTION TEMPERATURE (°C)
OUTPUT CURRENT (µA)
VxHB - VxHS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
6
7
8
9
10
11
12
13
14
JUNCTION TEMPERATURE (°C)
CHARGE PUMP OUTPUT VOLTAGE (V)
VDD = 7V
VDD = 12V
VDD = 10V
VDD = 8V
VDD = 15V
HIP4086, HIP4086A
9FN4220.8
September 27, 2012
FIGURE 12. AVERAGE TURN-ON CURRENT (0 TO 5V) FIGURE 13. AVERAGE TURN-OFF CURRENT (VDD TO 4V)
FIGURE 14. RISE AND FALL TIMES (10 to 90%) FIGURE 15. PROPAGATION DELAY
FIGURE 16. DISABLE PIN PROPAGATION DELAY FIGURE 17. REFRESH TIME
Typical Performance Curves (Continued)
-60 -40 -20 020 40 60 80 100 120 140 160
0
0.2
0.4
0.6
0.8
1
JUNCTION TEMPERATURE (°C)
AVERAGE TURN-ON CURRENT (A)
CGATE = 1000pF
VDD = 15V
VDD = 8V
VDD = 10V
VDD = 12V
VDD = 7V
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
0.4
0.8
1.2
1.6
2
JUNCTION TEMPERATURE (°C)
AVERAGE TURN-OFF CURRENT (A)
CGATE = 1000pF
VDD = 15V
VDD = 8V
VDD = 10V
VDD = 12V
VDD = 7V
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
10
20
30
40
JUNCTION TEMPERATURE (°C)
RISE AND FALL TIMES (ns)
RISE
FALL
VDD = XHB-XHS = 12V, CGATE = 1000pF
-60 -40 -20 0 20 40 60 80 100 120 140 160
20
40
60
80
100
JUNCTION TEMPERATURE (°C)
PROPAGATION DELAY (ns)
xHI to xHO
xLI to xLO
JUNCTION TEMPERATURE (°C)
-60 -40 -20 020 40 60 80 100 120 140 160
10
100
PROPAGATION DELAY (ns)
LOWER ENABLE TURN-ON
LOWER DISABLE TURN-OFF
UPPER DISABLE TURN-OFF
CRFSH (pF)
0 50 100 150 200 250 300 350 400 450 500
0
20
40
60
80
REFRESH TIME (µs)
TJ = +25°C
HIP4086, HIP4086A
10 FN4220.8
September 27, 2012
Functional Description
Input Logic
NOTE: When appropriate for brevity, input and output pins will be
prefixed with an “x” as a substitute for A, B, or C. For example,
xHS refers to pins AHS, BHS, and CHS.
The HIP4086/A is a three phase bridge driver designed
specifically for motor drive applications. Three identical half
bridge sections, A, B, and C, can be controlled individually by
their input pins, ALI, AHI, BLI, BHI, and CLI, CHI (xLI, xHI) or the 2
corresponding input pins for each section can be tied together to
form a PWM input (xLI connected to xHI = xPWM). When
controlling individual inputs, the programmable dead time is
optional but shoot-thru protection must then be incorporated in
the timing of the input signals. If the PWM mode is chosen, then
the internal programmable dead time must be used.
Shoot-Thru Protection
Dead time, to prevent shoot-thru, is implemented by delaying the
turn-on of the high-side and low-side drivers. The delay timers are
enabled if the voltage on the RDEL pin is greater than 100mV.
The voltage on RDEL will be greater than 100mV for any value of
programming resistor in the specified range. If the voltage on
RDEL is less than 100mV, the delay timers are disabled and no
shoot-thru protection is provided by the internal logic of the
HIP4086/A. When the dead time is to be disabled, RDEL should
be shorted to VSS.
Refresh Pulse
To insure that the boot capacitors are charged prior to turning on
the high-side drivers, a refresh pulse is triggered when DIS is low
or when the UV comparator transitions low (VDD is greater than
the programmed undervoltage threshold). Please refer to the
“Block Diagram (for clarity, only one phase is shown)” on page 2.
When triggered, the refresh pulse turns on all of the low-side
drivers (xLO = 1) and turns off all of the high-side drivers
(xHO = 0) for a duration set by a resistor tied between RDEL and
VSS. When xLO = 1, the low-side bridge FETs charge the boot
caps from VDD through the boot diodes.
FIGURE 18. DEAD TIME FIGURE 19. UNDERVOLTAGE THRESHOLD
FIGURE 20. IxHS LEAKAGE CURRENT
Typical Performance Curves (Continued)
JUNCTION TEMPERATURE (°C)
-60 -40 -20 020 40 60 80 100 120 140 160
0
2
4
6
DEAD TIME (µs)
RDEL = 100kΩ
RDEL = 10kΩ
JUNCTION TEMPERATURE (°C)
UNDERVOLTAGE SHUTDOWN/
-60 -40 -20 0 20 40 60 80 100 120 140 160
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
ENABLE VOLTAGE
ENABLE (50k, UVLO TO GND)
TRIP (50k, UVLO TO GND)
ENABLE (UVLO OPEN)
TRIP (UVLO OPEN)
TRIP/ENABLE (0k, UVLO TO VDD)
JUNCTION TEMPERATURE (°C)
-60 -40 -20 0 20 40 60 80 100 120 140 160
10
15
20
25
LEAKAGE CURRENT (µA)
VxHS = 80V
HIP4086, HIP4086A
11 FN4220.8
September 27, 2012
Charge Pump
The internal charge pump of the HIP4086/A is used to maintain
the bias on the boot cap for 100% duty cycle. There is no limit for
the duration of this period. The user must understand that this
charge pump is only intended to provide the static bias current of
the high-side drivers and the gate leakage current of the
high-side bridge FETs. It cannot provide in a reasonable time, the
majority of the charge on the boot cap that is consumed, when
the xHO drivers source the gate charge to turn on the high-side
bridge FETs. The boot caps should be sized so that they do not
discharge excessively when sourcing the gate charge. See
“Application Information” on page 11 for methods to size the
boot caps.
The charge pump has sufficient capacity to source a worst-case
minimum of 50µA to the external load. The gate leakage current
of most power MOSFETs is about 100nA so there is more than
sufficient current to maintain the charge on the boot caps.
Because the charge pump current is small, a gate-source resistor
on the high-side bridge FETs is not recommended. When
calculating the leakage load on the outputs of xHS, also include
the leakage current of the boot capacitor. This is rarely a problem
but it could be an issue with electrolytic capacitors at high
temperatures.
Application Information
Selecting the Boot Capacitor Value
The boot capacitor value is chosen not only to supply the internal
bias current of the high-side driver but also, and more
significantly, to provide the gate charge of the driven FET without
causing the boot voltage to sag excessively. In practice, the boot
capacitor should have a total charge that is about 20 times the
gate charge of the driven power FET for approximately a 5% drop
in voltage after charge has been transferred from the boot
capacitor to the gate capacitance.
The following parameters shown in Table 1, are required to
calculate the value of the boot capacitor for a specific amount of
voltage droop when using the HIP4086/A (no charge pump). In
Table 1, the values used are arbitrary. They should be changed to
comply with the actual application.
Equation 1 calculates the total charge required for the Period
duration. This equation assumes that all of the parameters are
constant during the Period duration. The error is insignificant if
Ripple is small.
If the gate to source resistor is removed (RGS is usually not
needed or recommended), then:
Cboot = 0.33µF
These values of Cboot will sustain the high side driver bias during
Period with only a small amount of Ripple. But in the case of the
HIP4086, the charge pump reduces the value of Cboot even
more. The specified charge pump current is a minimum of 50µA
which is more than sufficient to source Igate_leak. Also, because
the specified charge pump current is in excess of what is needed
for IHB, the total charge required to be sourced by the boot
capacitor is just
Not only is the required boot cap smaller in value, there is no
restriction on the duration of Period.
TABLE 1.
VDD = 10V VDD can be any value between 7 and 15VDC
VHB = VDD - 0.6V
= VHO
High side driver bias voltage (VDD - boot diode
voltage) referenced to VHS
Period = 1ms This is the longest expected switching period
IHB= 100µA Worst case high side driver current when
xHO = high (this value is specified for VDD = 12V
but the error is not significant)
RGS = 100kΩGate-source resistor (usually not needed)
Ripple = 5% Desired ripple voltage on the boot cap (larger
ripple is not recommended)
Igate_leak = 100nA From the FET vendor’s datasheet
Qgate80V = 64nC From Figure L
QCQgate80V
=Period (IHB
×VHO RGS Igate_leak
+⁄)++
(EQ. 1)
Cboot QC
=Ripple∗VDD()⁄
Cboot 0.52μF=
QCQgate80V
=orC
boot 0.13μF=(EQ. 2)
FIGURE 21. TYPICAL GATE VOLTAGE vs GATE CHARGE
HIP4086, HIP4086A
12 FN4220.8
September 27, 2012
Typical Application Circuit
Figure 22 is an example of how the HIP4086 and HIP4086A
3-phase drivers can be applied to drive a 3-phase motor.
Depending on the application, the switching speed of the bridge
FETs can be reduced by adding series connected resistors
between the xHO outputs and the FET gates. Gate-Source
resistors are recommended on the low-side FETs to prevent
unexpected turn-on of the bridge should the bridge voltage be
applied before VDD. Gate-source resistors on the high-side FETs
are not usually required if low-side gate-source resistors are
used. If relatively small gate-source resistors are used on the
high-side FETs, be aware that they will load the charge pump of
the HIP4086 negating the ability of the charge pump to keep the
high-side driver biased during very long periods.
An important operating condition that is frequently overlooked by
designers is the negative transient on the xHS pins that occurs
when the high-side bridge FET turns off. The Absolute Maximum
transient allowed on the xHS pin is -6V but it is wise to minimize
the amplitude to lower levels. This transient is the result of the
parasitic inductance of the low-side drain-source conductor on
the PCB. Even the parasitic inductance of the low-side FET
contributes to this transient.
When the high-side bridge FET turns off, because of the inductive
characteristics of a motor load, the current that was flowing in
the high-side FET (blue) must rapidly commutate to flow through
the low-side FET (red). The amplitude of the negative transient
impressed on the xHS node is (di/dt x L) where L is the total
parasitic inductance of the low-side FET drain-source path and
di/ddt is the rate at which the high-side FET is turned off. With
the increasing power levels of new generation motor drives,
clamping this transient becomes more and more significant for
the proper operation of the HIP4086/A.
There are several ways of reducing the amplitude of this
transient. If the bridge FETs are turned off more slowly to reduce
di/dt, the amplitude will be reduced but at the expense of more
switching losses in the FETs. Careful PCB design will also reduce
the value of the parasitic inductance. However, these two
solutions by themselves may not be sufficient. Figure 23
illustrates a simple method for clamping the negative transient.
Two series connected, fast PN junction, 1A diodes are connected
between xHS and VSS as shown. It is important that the
components be placed as close as possible to the xHS and VSS
pins to minimize the parasitic inductance of this current path.
Two series connected diodes are required because they are in
parallel with the body diode of the low-side FET. If only one diode
is used for the clamp, it will conduct some of the negative load
current that is flowing in the low-side FET. In severe cases, a
small value resistor in series with the xHS pin as shown, will
further reduce the amplitude of the negative transient.
Please note that a similar transient with a positive polarity occurs
when the low-side FET turns off. This is less frequently a problem
because xHS node is floating up toward the bridge bias voltage.
The Absolute Max voltage rating for the xHS node does need to
be observed when the positive transient occurs.
FIGURE 22. TYPICAL APPLICATION CIRCUIT
FIGURE 23. BRIDGE WITH PARASITIC INDUCTANCES
VSS
xHS
xLO
xHO INDUCTIVE
LOAD
+
-
+
-
HIP4086, HIP4086A
13 FN4220.8
September 27, 2012
General PCB Layout Guidelines
The AC performance of the HIP4086/A depends significantly on
the design of the PC board. The following layout design
guidelines are recommended to achieve optimum performance:
• Place the driver as close as possible to the driven power FETs.
• Understand where the switching power currents flow. The high
amplitude di/dt currents of the driven power FET will induce
significant voltage transients on the associated traces.
• Keep power loops as short as possible by paralleling the
source and return traces.
• Use planes where practical; they are usually more effective
than parallel traces.
• Avoid paralleling high amplitude di/dt traces with low level
signal lines. High di/dt will induce currents and consequently,
noise voltages in the low level signal lines.
• When practical, minimize impedances in low level signal
circuits. The noise, magnetically induced on a 10k resistor, is
10x larger than the noise on a 1k resistor.
• Be aware of magnetic fields emanating from motors,
transformers and inductors. Gaps in these magnetic structures
are especially bad for emitting flux.
• If you must have traces close to magnetic devices, align the
traces so that they are parallel to the flux lines to minimize
coupling.
• The use of low inductance components such as chip resistors
and chip capacitors is highly recommended.
• Use decoupling capacitors to reduce the influence of parasitic
inductance in the VDD and GND leads. To be effective, these
caps must also have the shortest possible conduction paths. If
vias are used, connect several paralleled vias to reduce the
inductance of the vias.
• It may be necessary to add resistance to dampen resonating
parasitic circuits especially on xHO and xLO. If an external gate
resistor is unacceptable, then the layout must be improved to
minimize lead inductance.
• Keep high dv/dt nodes away from low level circuits. Guard
banding can be used to shunt away dv/dt injected currents
from sensitive circuits. This is especially true for control circuits
that source the input signals to the HIP4086/A.
• Avoid having a signal ground plane under a high amplitude
dv/dt circuit. This will inject di/dt currents into the signal
ground paths.
• Do power dissipation and voltage drop calculations of the
power traces. Many PCB/CAD programs have built in tools for
calculation of trace resistance.
• Large power components (Power FETs, Electrolytic caps, power
resistors, etc.) will have internal parasitic inductance which
cannot be eliminated. This must be accounted for in the PCB
layout and circuit design.
• If you simulate your circuits, consider including parasitic
components especially parasitic lead inductance.
HIP4086, HIP4086A
14
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in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN4220.8
September 27, 2012
For additional products, see www.intersil.com/product_tree
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Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make
sure you have the latest Rev.
DATE REVISION CHANGE
10/7/11 FN4220.8 Removed evaluation board from “Ordering Information” and “Related Literature” since it is inactive.
5/10/11 FN4220.7 Added alternate parameters for HIP4086A in DC Electrical Spec Table Supply Currents on page 5.
Added to Charge Pump Figures 10 and 11 in Typical Performance Curves "HIP4086 Only"
3/18/11 -Converted to new Intersil Template per PL request.
-Changed Title from "80V, 500mA, 3-Phase Driver" to "80V, 500mA, 3-Phase MOSFET Driver"
-Rewrote description on page 1 by adding HIP4086A and stating the differences between parts.
-Updated ordering information by adding part number HIP4086AABZ and EVAL Board. Added MSL note and
numbered all notes to meet new standard, Removed obsolete part HIP4086AP
-Updated Application Block Diagram on page 1
-Added Charge Pump Current Curve on page 1
-Updated Features and Applications Section
-Added Related Literature
-Updated Functional Block Diagram by adding color and notes
-Updated Thermal Information and notes on page 5
-Added Boldface limits note to Electrical Spec Table conditions, added note to MIN and MAX columns to
reference new standard compliance note.
-Updated all timing diagrams for better clarification on page 7
-Added Functional Description, Applications Information and General PCB Layout Guidelines sections beginning
on page 10
-Updated POD M24.3 by removing table listing dimensions and putting dimensions on drawing. Added Land
Pattern.
Added Revision History and Products Information.
7/26/04 FN4220.6 Pb-Free Parts added
2/18/03 FN4220.5 Updated Datasheet
6/21/02 FN4220.4 Initial Release.
HIP4086, HIP4086A
15 FN4220.8
September 27, 2012
Dual-In-Line Plastic Packages (PDIP)
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between English and Met-
ric dimensions, the inch dimensions control.
2. Dimensioning and toler ancing per ANSI Y14.5M-1982.
3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publi-
cation No. 95.
4. Dimensions A, A1 and L are measured with the package seated in JEDEC seat-
ing plane gauge GS-3.
5. D, D1, and E1 dimensions do not include mold flash or protrusions. Mold flash
or protrusion s shall not exceed 0.010 inch (0.2 5m m).
6. E and are measured with the leads constrained to be perpendicular to da-
tum .
7. eB and eC are measured at the lead tips with the leads unconstrained. eC must
be zero or greater.
8. B1 maximum dimensions do not include dam bar protru sions. Dambar p rotru-
sions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3, E42.6 will
have a B1 dimension of 0.030 - 0.045 inch (0.7 6 - 1.14mm).
eA
-C-
C
L
E
eA
C
eB
eC
-B-
E1
INDEX 12 3 N/2
N
AREA
SEATING
BASE
PLANE
PLANE
-C-
D1
B1 Be
D
D1
A
A2
L
A1
-A-
0.010 (0.25) C AMBS
E24.3 (JEDEC MS-001-AF ISSUE D)
24 LEAD NARROW BODY DUAL-IN-LINE PLASTIC
PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMINMAXMINMAX
A - 0.210 - 5.33 4
A1 0.015 - 0.39 - 4
A2 0.115 0.195 2.93 4.95 -
B 0.014 0.022 0.356 0.558 -
B1 0.045 0.070 1.15 1.77 8
C 0.008 0.014 0.204 0.355 -
D 1.230 1.280 31.24 32.51 5
D1 0.005 - 0.13 - 5
E 0.300 0.325 7.62 8.25 6
E1 0.240 0.280 6.10 7.11 5
e 0.100 BSC 2.54 BSC -
eA0.300 BSC 7.62 BSC 6
eB- 0.430 - 10.92 7
L 0.115 0.150 2.93 3.81 4
N24 249
Rev. 0 12/93
HIP4086, HIP4086A
16 FN4220.8
September 27, 2012
Package Outline Drawing
M24.3
24 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE (SOIC)
Rev 2, 3/11
TOP VIEW
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1982.
2. Package length does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
3. Package width does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.25mm
(0.010 inch) per side.
4. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
5. Terminal numbers are shown for reference only.
6. The lead width as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm
(0.024 inch).
7. Controlling d imension: MILLIMETER. Converted inch dimensions in
( ) are not necessarily exact.
8. This outline conforms to JEDEC publication MS-013-AD ISSUE C.
SIDE VIEW “A” SIDE VIEW “B”
TYPICAL RECOMMENDED LAND PATTERN
INDEX
AREA
24
123
SEATING PLANE
DETAIL "A"
x 45°
7.60 (0.299)
7.40 (0.291)
0.75 (0.029)
0.25 (0.010)
10.65 (0.419)
10.00 (0.394)
1.27 (0.050)
0.40 (0.016)
15.60 (0.614)
15.20 (0.598) 2.65 (0.104)
2.35 (0.093)
0.30 (0.012)
0.10 (0.004)
1.27 (0.050)
0.51 (0.020)
0.33 (0.013) 0.32 (0.012)
0.23 (0.009)
8°
0°
1.981 (0.078)
9.373 (0.369)
0.533 (0.021)1.27 (0.050)