STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
N-CH AN NEL ENHANCEMENT MODE H IGH VOLTAGE POWER MOSFETS
POWER MOS IV
®
G
D
S
050-5898 Rev - 8-2001
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1 and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APL501P
500
43
172
±30
520
4.16
-55 to 150
300
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 8V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
MIN TYP MAX
500
43
0.12
25
250
±100
24
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
UNIT
Volts
Amps
Ohms
µA
nA
Volts
Symbol
VDSS
ID
IDM, lLM
VGS
PD
TJ,TSTG
TL
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 5792 15 15 FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
THERMAL CHARACTERISTICS
Symbol
RQJC
RQCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN TYP MAX
0.24
0.06
UNIT
°C/W
APL501P 500V 43.0A 0.12W
HERMETIC PACKAGE
P-Pack
DYNAMIC CHARACTERISTICS APL501P
1Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3See MIL-STD-750 Method 3471
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
ZqJC, THERMAL IMPEDANCE (°C/W)
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
SAFE OPERATING AREA CHARACTERISTICS
Test Conditions / Part Number
VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C Watts
050-5898 Rev - 8-2001
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
MIN TYP MAX
6040 7300
1220 1710
510 770
13 26
20 40
54 81
11 20
UNIT
pF
ns
Symbol
SOA1
MIN TYP MAX
325
UNIT
Characteristic
Safe Operating Area
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
80
60
40
20
0
80
60
40
20
0
020406080100 0 4 8 12 16
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
8 V
6 V
7 V
VGS=9V, 10V, 12V, 14 & 16V
5 V
8 V
6 V
7 V
5 V
9 V
VGS=10, 12, 14 & 16V
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
C, CAPACITANCE (pF) VGS(TH), THRESHOLD VOLTAGE BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED) VOLTAGE (NORMALIZED)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +25°C
TJ = -55°C
TJ = +125°C
TJ = +125°C
TJ = +25°C TJ = -55°C
VGS=10V
VGS=20V
NORMALIZED TO
VGS
= 10V @ 0.5 ID [Cont.]
ID = 0.5 ID [Cont.]
VGS = 10V
Crss
Coss
Ciss
02468 020406080
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
1 5 10 50 100 500 .01 .1 1 10 50
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30,000
10,000
5,000
1,000
500
100
40
30
20
10
0
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
175
100
50
10
5
1
.5
.1
APL501P
OPERATION HERE
LIMITED BY RDS (ON)
TC =+25°C
TJ =+150°C
SINGLE PULSE
100µS
1mS
10mS
100mS
DC
050-5898 Rev - 8-2001
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
APL501P
050-5898 Rev - 8-2001
P-Pack Package Outline
29.34 (1.155)
29.08 (1.145)
35.81 (1.41)
35.31 (1.39)
51.05 (2.01)
50.55 (1.99)
3.43 (.135)
2.92 (.115)
(4-Places)
11.63 (.458)
11.13 (.438) 12.45 (.490)
11.94 (.470)
35.18 (1.385)
34.67 (1.365)
41.53 (1.635)
41.02 (1.615)
3.43 (.135)
2.92 (.115)
(4-Places)
5.33 (.210)
4.83 (.190)
1.40 (.055)
1.02 (.040)
9.27 (.365)
8.64 (.340)
.635 (.025)
.381 (.015)
4.39 (.173)
4.14 (.163)
(4 Places)
Dimensions in Millimeters and (Inches)
28.70 (1.130)
28.45 (1.120)
4.06 (.160)
3.81 (.150)
(5 Places)
10.92 (.430)
10.67 (.420)
Drain Gate
Source Source Sense
