SS1003M3
No.8372-1/3
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Low switching noise.
Low forward voltage (IF=1.0A, VF max=0.43V).
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V
Average Output Current IO1.0 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Voltage VRIR=0.5mA 30 V
Forward Voltage VF1I
F=0.5A 0.32 0.37 V
VF2I
F=1.0A 0.38 0.43 V
Reverse Current IRVR=16V 360 µA
Interterminal Capacitance C VR=10V, f=1MHz 27 pF
Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns
Marking : SJ Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8372A
13107 TI IM / 63005SB MS IM TB-00001532
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
SS1003M3 Schottky Barrier Diode
30V, 1.0A Rectifier
SS1003M3
No.8372-2/3
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Rth(j-a)1
Mounted in Cu-foiled area of 0.72mm
2
0.03mm
94.7 °C / W
Thermal Resistance
on glass epoxy board
Rth(j-a)2
Mounted on a ceramic board (500mm
2
0.8mm)
67.7 °C / W
Package Dimensions Electrical Connection
unit : mm (typ)
7019A-001
trr Test Circuit
1 : Anode
2 : No Contact
3 : Cathode
SANYO : MCPH3
0.250.25
0.07
2.1
1.6
2.0
0.65 0.3
0.85
0.15
12
3
0 to 0.02
3
12
1 : Anode
2 : No Contact
3 : Cathode
Top view
Duty10%
5010010
--5V trr
10µs
100mA100mA
10mA
0
IT09557
100 35
IT09558
0.01
2
3
5
7
2
0.1
3
5
7
2
1.0
3
0.4 0.60.1 0.2 0.3 0.5 0.01
5
5
2
2
5
2
5
2
5
2
5
0.1
1.0
100
10
1k
10k
100k
201552530
Ta=1
25
°C
75
°
C
50°C
0°C
--25
°
C
Ta=1
25
°C
1
00
°
C
75
°
C
50
°
C
25
°
C
0
°
C
--25°C
100°C
25°C
5
2
2
Forward Voltage, VF -- V
Forward Current, IF -- A
IF -- VF
Reverse Voltage, VR -- V
IR -- VR
Reverse Current, IR -- µA
SS1003M3
No.8372-3/3
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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In the event that any or all SANYO Semiconductor products (including technical data,services) described
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or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
PS
70.01 23 7
0.1
052 2337
1.0
5
12
14
8
4
10
6
2
ID00435
IFSM -- t
I
S
20ms
t
Current waveform 50Hz sine wave
Time, t -- s
Surge Forward Current, IFSM(Peak) -- A
0
0
0.6
0.5
0.3
0.4
0.2
0.1
0.4 1.20.8 1.00.2 0.6
IT09559
(1) (2)(4)(3)
0.1 1.0
100
7
2
10
2
3
5
7
3
23 57 2 10
35 2357
IT09556
Average Output Current, IO -- A
PF(AV) -- IO
Average Forward Power Dissipation, PF(AV) -- W
Reverse Voltage, VR -- V
C -- VR
Interterminal Capacitance, C -- pF
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
θ
360°
Rectangular
wave
180°
360°
Sine wave
This catalog provides information as of January, 2007. Specifications and information herein are subject
to change without notice.