AiAMOSPEC SILICON PNP POWER TRANSISITORS ... designed for medium-speed switching and amplifier applications PNP 2N3789 FEATURES Thru * Tow Gain Ranges: Wee 15 one 2N3792 hFE(Min)= 15 and 30@1!,=3A -2N3789,2N3790 25 and S0@I1,=1A -2N3791 ,2N3792 * Excellent Safe Operating Areas * Complementary NPN Types Available-2N3713 thru 2N3716 10 AMPER POWER TRANSISTORS MAXIMUM RATINGS PNP SILICON 60-80 VOLTS Characteristic Symbol | 2N3789 | 2N3790 | Unit 150 WATTS 2N3791 2N3792 Collector-Base Voltage Vepo 60 80 V Collector-Emitter Voltage VeEo 60 80 Vv Emitter-Base Voltage Veso 7 Vv Collector Current - Continuous le 10 A Base Current-Continuous ls 4 A Total Power Dissipation @T,=25C Pp 150 Ww Derate above 25C 0.857 wrc Operating and Storage Junction Ty. Tst C Temperature Range -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Roje 1.17 C/W PIN 1.BASE 2.EMITTER COLLECTOR(CASE) FIGURE -1 POWER DERATING MILLIMETERS DIM MIN MAX P,, , POWER DISSIPATION(WATTS) _ _ _ _ xXe~LOTMmMIODPY oO) I 75 90 2990 | 30.40 25 16.64 | 17.30 0 388 | 436 0 25 50 75 100 125 150 175 200 10.67 | 11.18 Te, TEMPERATURE(C)2N3789 Thru 2N3792 PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voitage (1) 2N3789, 2N3791 | Vee (sus) 60 Vv (1,= 200 mA, |,= 0) 2N3790, 2N3792 80 Collector -Emitter Cutoff Current loex mA (Veg= 60 V, Vegiorn = -1-5V ) 2N3789, 2N3791 1.0 (Veg= 80 V, Vegiom = -1.5V ) 2N3790, 2N3792 1.0 (Veg= 60 V, Vagiom= -1-5V,T. = 150C ) 2N3789, 2N3791 5.0 (Veg= 80 V, Vegiotn= -1-5V,T. = 150C ) 2N3790, 2N3792 5.0 Emitter-Base Cutoff Current leBo mA (Vep= 7.0 V, I,=0 ) All Types 5.0 ON CHARACTERISTICS (1) DC Current Gain hFE (I_= 1.0 A, Vog= 2.0 V ) 2N3789, 2N3790 25 90 2N3791, 2N3792 50 180 (Ig= 3.0 A, Vog= 2.0 V) 2N3789, 2N3790 15 2N3791, 2N3792 30 Collector-Emitter Saturation Voltage Vog{saty V (I,= 4.0A, 1,=0.4A) 2N3789, 2N3790 1.0 (Ig= 5.0A, I,= 0.5A) 2N3791, 2N3792 1.0 Base-Emitter On Voltage VeE(on) Vv (I,= 5.0 A, Vog= 2.0 V) 2N3789, 2N3790 2.0 2N3791, 2N3791 1.8 (Ig= 10 A, Vog= 4.0 V) All Types 4.0 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (2) f; MHz (I= 500 mMA,Veg= 10V, f = 1 MHz) 4.0 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f= [Myo | * f sont2N3789 thru 2N3792 NPN i 2N3789,2N3791 2N3790,2N3792 ACTIVE REGION SAFE OPERATING AREA ACTIVE REGION SAFE OPERATING AREA 500 us i us i us IC , COLLECTOR CURRENT (Amp) iC , COLLECTOR CURRENT (Amp) 0 10. 20 30 40 50 60 70 0 10 20 30 40 50 60 70 80 90 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) COLLECTOR SATURATION REGION TYPICAL SWITCHING TIME 1 4. Ics p Ty=26C la1=4a90.5A g To=28C Ww < 3 E 2 a r. F 5 0, Ww a 9 $ 0 i a | 500 700 1k 2k of 02 03 05 07 10 20 30 80 ls, BASE CURRENT (mA) Ic, COLLECTOR CURRENT (AMP) DC CURRENT GAIN DC CURRENT GAIN hre , DC CURRENT GAIN hre , DC CURRENT GAIN 3 5 10 03 3 Ic , COLLECTOR CURRENT (AMP) Ic , COLLECTOR CURRENT (AMP) 03