SPEC NO: DSAK2756 REV NO: V.4A DATE: APR/20/2013 PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Y.Liu ERP: 1301003063
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
*Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Absolute Maximum Ratings at TA=25° C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
3.Wavelength value is traceable to the CIE127-2007 compliant national standards.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA Description
Min. Typ.
Super Bright Orange (AlGaInP) White Diffused
255000 500000 Common Anode, Rt.
Hand Decimal.
*88000 *180000
SA40-19SEKWA
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength Super Bright Orange 610 nm IF=20mA
λD [1] Dominant Wavelength Super Bright Orange 601 nm IF=20mA
Δλ1/2 Spectral Line Half-width Super Bright Orange 29 nm IF=20mA
C Capacitance Super Bright Orange 15 pF VF=0V;f=1MHz
VF [2] Forward Voltage
(DP) Super Bright Orange 8.4
(4.2)
10.0
(5.0) V IF=20mA
IR Reverse Current
(Per chip) Super Bright Orange 20
(10) uA VR=5V
(VR=5V)
Parameter Super Bright Orange Units
Power dissipation
(DP)
600
(150) mW
DC Forward Current
(DP)
60
(30) mA
Peak Forward Current [1]
(DP)
390
(195) mA
Reverse Voltage
(Per chip)
5
(5) V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds