92612 TKIM/O3003 TSIM TA-3682 No.7504-1/6
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
August, 2013
15C01C
Bipolar Transistor
15V, 0.7A, Low VCE(sat) NPN Single CP
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Applications
• Low-frequency Amplifi er, muting circuit
Features
• Large current capacity
• Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA]
• Ultrasmall package facilitates miniaturization in end products
• Small ON-resistance (Ron)
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 20 V
Collector-to-Emitter Voltage VCEO 15 V
Emitter-to-Base Voltage VEBO 5V
Collector Current IC700 mA
Collector Current (Pulse) ICP 1.4 A
Collector Dissipation PCMounted on a glass epoxy board (20×30×1.6mm) 300 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7013A-009
Ordering number : EN7504A
Product & Package Information
• Package : CP
• JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB
•
Minimum Packing Quantity
: 3,000 pcs./reel
Packing Type: TB Marking
Electrical Connection
1 : Base
2 : Emitter
3 : Collector
CP
12
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95 0.4
0.1
0.5
0.5
TB YP
LOT No.
LOT No.
15C01C-TB-E
3
2
1
15C01C
No.7504-2/6
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=15V, IE=0A 0.1 μA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 0.1 μA
DC Current Gain hFE VCE=2V, IC=10mA 300 800
Gain-Bandwidth Product fTVCE=2V, IC=50mA 330 MHz
Output Capacitance Cob VCB=10V, f=1MHz 3.2 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA 150 300 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=200mA, IB=10mA 0.9 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 20 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞15 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 5 V
Turn-On Time ton See specifi ed Test Circuit. 30 ns
Storage Time tstg 77 ns
Fall Time tf40 ns
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
15C01C-TB-E CP 3,000pcs./reel Pb Free
VRRB
VCC=5VVBE= --5V
++
50Ω
INPUT
OUTPU
T
RL
220μF 470μF
PW=20μsIB1
D.C.≤1% IB2
IC=20IB1= --20IB2=500mA
100
200
300
400
600
500
700
800
0 0.2 0.4 0.6 0.8 1.0 1.2
0
0 0.4 0.8 1.2 1.60.2 0.6 1.0 1.4 1.8 2.0
IT05490 IT05491
0
40
80
120
160
200
20
60
100
140
180
IB=0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
1.0mA
0.9mA
VCE=2V
Ta=75°C
25°C
--25°C
IC -- VCE IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
15C01C
No.7504-3/6
1.0 23 57
10 23 57
100 23 57
1000
5
7
100
2
3
5
7
IT05496
VCE=2V
1.0 23 57
10 23 57
100 23 57
1000
100
2
3
5
7
1000
2
3
5
7
10000
IT05495
Ta= --25°C
75
°
C
25°C
IC / IB=20
fT -- IC
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
VBE(sat) -- IC
Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
0
0
IT05499
50
100
200
150
250
300
350
4020 100 12060 80 140 160
Collector Dissipation, PC -- mW
Ambient Temperature, Ta -- °C
PC -- Ta
Mounted on a glass epoxy board(20✕30✕1.6mm)
1.0 23 57
10 23 57
100 23 57
1000
10
2
3
5
7
100
2
3
5
7
1000
IT05494
IC / IB=50
Ta=75°C
--25
°
C
25
°
C
0.1 23 57
1.0 23 57
10 23
1.0
2
3
5
7
10
IT05497
f=1MHz
Cob -- VCB
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- mA
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
f=1MHz
0.1
0.1
IT06067
7
5
3
2
10
7
5
3
2
7
5
3
2
1.0
100
32 57 32 57
1.0 10
OUT
IN 1kΩ
1kΩ
IB
Ron -- IB
Base Current, IB -- mA
ON-resistance, Ron -- Ω
1.0 23 57
10 23 57
100 23 57
1000
10
2
3
5
7
100
2
3
5
7
1000
3
5
7
100
2
3
5
7
1000
1.0 23 57
10 23 57
100 23 57
1000
IT05492 IT05493
VCE=2V IC / IB=20
Ta=75
°
C
--25°C
25°C
Ta=75°C
--25°C
25°C
hFE -- ICVCE(sat) -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
15C01C
No.7504-4/6
Embossed Taping Specifi cation
15C01C-TB-E
15C01C
No.7504-5/6
Outline Drawing Land Pattern Example
15C01C-TB-E
Mass (g) Unit
0.013
* For reference
mm Unit: mm
0.950.95
1.0
2.4
0.8
15C01C
PS No.7504-6/6
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