Fea tures
•Ceramic surface mount package
•Miniature package to minimize circuit
board area required
•Hermetically sealed
•Per MIL-PRF-19500/421
De scrip tion
The JANTX2N4854U is a hermetically
sealed, ceramic surface mount,
complementary transistor pair. The
JANTX2N4854U consists of an NPN
transistor die and PNP transistor die.
This surface mount package is the most
recent addition to MIL-PRF-19500/421.
The “U” designator denotes the 6
terminal (C-6) leadless chip carrier
package option. The miniature six pin
ceramic package is ideal for designs
where board space and device weight
are important design considerations.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is VCB = 30 V, PD = 300
mW each transistor TA = 25o C. Refer
to MIL-PRF-19500/421 for complete
requirements.
When ordering parts without processing,
do not use a JAN prefix.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
NPN to PNP Iso la tion Volt age .................................... 500 VDC
Collector- Base Volt age ............................................. 60 V
Collector- Emitter Volt age ........................................... 40 V
Emitter- Base Volt age .............................................. 5.0 V
Col lec tor Current- Continuous ..................................... 600 mA
Op er at ing Junc tion Tem pera ture (TJ)........................ -65o C to +200o C
Stor age Junc tion Tem pera ture (Tstg)........................ -65o C to +200o C
Power Dis si pa tion @ TA = 25o C (both tran sis tors driven equally) ........... 0.6 W
Power Dis si pa tion @ TC = 25o C (both tran sis tors driven equally) ......... 2.0 W(1)
Sol der ing Tem pera ture (va por phase re flow for 30 sec.) ................. 215o C
Sol der ing Tem pera ture (heated Collet for 5 sec.) ....................... 260o C
Notes:
(1) Der ate line arly 3.4 mW/o C above 25o C.
Prod uct Bul le tin JANTX, JANTXV, 2N4854U
Sep tem ber 1996
Surface Mount NPN/PNP Complementary Transistors
Type JANTX, JANTXV, 2N4854U
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
15-12
.058 (1.47)
Types JANTX, JANTXV, 2N4854U
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted) See Note 3
SYM BOL PA RAME TER MIN MAX UNIT TEST CON DI TIONS
Off Char ac ter is tics
V(BR)CBO Collector-Base Breakdown Voltage 60 VIC = 10.0 µA, IE = 0
V(BR)CEO Collector-Emitter Breakdown Voltage 40 VIC = 10.0 mA, IB = 0
V(BR)EBO Emitter-Base Breakdown Voltage 5.0 VIE = 10.0 µA, IC = 0
ICBO Collector-Base Cutoff Current 10.0 nA VCB = 50 V, IE = 0
10.0 µAVCB = 50 V, IE = 0, TA = 150o C
IEBO Emitter-Base Cutoff Current 10.0 nA VEB = 3.0 V, IC = 0
On Char ac ter is tics
hFE DC Current Transfer Ratio 50 -VCE = 1 V, IC = 150 mA(2)
35 -VCE = 10.0 V, IC = 0.1 mA
50 -VCE = 10.0 V, IC = 1.0 mA
75 -VCE = 10.0 V, IC = 10 mA(2)
100 300 -VCE = 10.0 V, IC = 150 mA(2)
35 -VCE = 10.0 V, IC = 300 mA(2)
12 -VCE = 10.0 V, IC = 10 mA, TA = -55o C(2)
VCE(SAT) Collector-Emitter Saturation Voltage 0.40 VIC = 150 mA, IB = 15 mA(2)
VBE(SAT) Base-Emitter Saturation Voltage 0.8 VIC = 150 mA, IB = 15 mA(2)
Small- Signal Char ac ter is tics
hie Small Signal Common Emitter Input
Impedance 1.5 9 kΩ
VCE = 10 V, IC = 1.0 mA, f = 1.0 kHz
hoe Small Signal Common Emitter Output
Admittance 50 µmho
hfe Small Signal Current Transfer Ratio 60 300 -
NF Noise Figure 8db f = 1.0 kHz, RG = 1.0 kΩ, IC = 0.1 mA, VCE = 10
V
IhfeISmall Signal Current Transfer Ratio 2.0 8.0 -VCE = 20 V, IC = 20 mA, f = 100 MHz
Cobo Output Capacitance 8.0 pF VCB = 10 V, 100 kHz ≤ f ≤ 1.0 MHz
Switch ing Char ac ter is tics
ton Turn-On Time 45 ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA
toff Turn-Off Time 300 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA
(2) Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
(3) Polarities given are for the NPN device. Reverse polarity on limits and conditions as applicable for the PNP side.
15-13
