XP1043-QH Power Amplifier 12.0-16.0 GHz Rev. V1 Features VD2 VD3 20 19 21 23 22 24 GND VD1 1 18 GND GND 2 17 GND nc 3 16 RF IN 4 15 GND 5 14 nc GND 6 13 nc VG1 VG2 VG3 nc Vdet nc RF OUT 12 11 GND 10 The XP1043-QH is a packaged linear power amplifier that operates over the 12.0-16.0 GHz frequency band. The device provides 21.5 dB gain and 41 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package. The packaged amplifier is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in GaAs pHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. This device is specially designed for use in Point-to-Point Radio systems for cellular backhaul applications, and is well suited for other telecom applications such as SATCOM and VSAT. GND 9 Description nc 8 32 dBm Saturated RF Power 41 dBm Output IP3 Linearity 17 dB Gain Control On-Chip Power Detector Lead-Free 4 mm 24-lead PQFN Package 100% RF Testing RoHS* Compliant and 260C Reflow Compatible 7 Functional Schematic Vref Pin Configuration Pin No. Function Pin No. Function 1-2 Ground 13-14 Not Connected 3 Not Connected 15 RF Output 4 RF Input 16 Not Connected 5-6 Ground 17-18 Ground 7 Gate 1 Bias 19 Drain 3 Bias 8 Gate 2 Bias 20 Drain 2 Bias 9 Gate 3 Bias 21 Drain 1 Bias 10 Not Connected 22-23 Ground 11 Pwr Det 24 Not Connected 12 Pwr Det Ref Absolute Maximum Ratings 1,2 Parameter Ordering Information Supply Voltage (Vd1,2,3) +8.0 V Supply Current (Id1,2,3) 1500 mA bulk quantity Gate Bias Voltage (Vg1,2,3) -2.4 V tape and reel Max Power Dissipation (Pdiss) 5.5W RF Input Power +19 dBm Operating Temperature (Ta) -55 C to +85 C Storage Temperature (Tstg) -65 C to +150 C Channel Temperature (Tch) 165 C MSL Level (MSL) MSL3 Part Number Package XP1043-QH-0G00 XP1043-QH-0G0T XP1043-QH-EV1 evaluation module ESD Min.-Machine Model (MM) Class A ESD Min.-Human Body Model (HBM) Class 1A (1) (2) 1 Absolute Max. Minimum specifications are set under nominal (typ.) bias conditions. Bias can be adjusted higher to achieve greater linearity and power; however, maximum total power dissipated is specified at 5.5 W Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1043-QH Power Amplifier 12.0-16.0 GHz Rev. V1 Electrical Specifications: 12.0-16.0 GHz (Ambient Temperature T = 25C) Parameter Units Min.3 Typ. Small Signal Gain (S21) dB 19.0 21.5 Input Return Loss (S11) dB 10.0 15.0 Output Return Loss (S22) dB 10.0 10.0 Reverse Isolation (S12) dB 55.0 P1dB dBm 30.0 Psat dBm 31.0 32.0 OIP3 at Pout = 18 dBm per Tone dBm 40.0 41.0 Power Detector Range dB - 37.0 - Drain Bias Voltage (Vd1,2,3) VDC 7.0 7.0 Detector Bias Voltage (Vdet,ref) VDC 5.0 Gate Bias Voltage (Vg1,2,3) VDC Supply Current (Id1) -2 Max. -1.0 0.0 mA 100 200 Supply Current (Id2) mA 200 400 Supply Current (Id3) mA 400 800 3. Minimum specifications are set under nominal (typ.) bias conditions. Bias can be adjusted higher to achieve greater linearity and power. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1043-QH Power Amplifier 12.0-16.0 GHz Rev. V1 Recommended Layout Recommended Decoupling Capacitors: 100pF 0402, 10F 0805 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1043-QH Power Amplifier 12.0-16.0 GHz Rev. V1 Typical Performance Curves XP1043-QH: Pout (dBm) vs Pin (dBm) at Room Temp. Vd = 7 V, Iq = 700mA 30 34 25 32 20 30 15 28 Output Power (dBm) S-parameter (dB) XP1043-QH: S-parameters (dB) vs. Freq (GHz), (VDD=7V, ID1=100mA, ID2=200mA, ID3=400mA) 10 5 S21 S11 S22 0 -5 -10 26 24 22 Pout, Freq = 12.5 GHz 20 Pout, Freq = 13.0 GHz Pout, Freq = 13.5 GHz 18 Pout, Freq = 14.0 GHz 16 Pout, Freq = 14.5 GHz -20 14 Pout, Freq = 15.0 GHz -25 12 Pout, Freq = 15.5 GHz -15 10 11 12 13 14 15 16 17 18 10 -10 Freq (GHz) -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) XP1043-QH: Pout (dBm) vs Pin (dBm) at +85 C. Vd = 7 V, Iq = 700mA XP1043-QH: V_Detect (mV) vs Output Power (dBm) Freq = 12.5-15.5 GHz, Temp = -45 to 85 Degree C 10000 34 32 12.5GHz, 25C 15.5GHz, 25C 12.5GHz, -45C 15.5GHz, -45C 12.5GHz, 85C 15.5GHz, 85C 28 26 24 22 Pout, Freq = 12.5 GHz 20 Pout, Freq = 13.0 GHz Pout, Freq = 13.5 GHz 18 Pout, Freq = 14.0 GHz 16 Pout, Freq = 14.5 GHz 14 Pout, Freq = 15.0 GHz 12 Pout, Freq = 15.5 GHz 10 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 Detector Voltage = Vref - Vdet (mV) Output Power (dBm) 30 1000 100 Input Power (dBm) 10 0 3 6 9 12 15 18 21 24 27 Output Power (dBm) XP1043-QH: C/I3 (dBc) vs Pout per Tone (dBm) at at +85 C. Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz 60 65 55 60 50 55 45 50 40 45 35 40 CI/3 (dBc) CI/3 (dBc) XP1043-QH: C/I3 (dBc) vs Pout per Tone (dBm) at Room Temp. Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz 30 25 20 CI3, Freq = 12.5 GHz, Temp = 35 C 15 CI3, Freq = 13.5 GHz, Temp = 35 C 10 CI3, Freq = 14.5 GHz, Temp = 35 C 5 CI3, Freq = 15.5 GHz, Temp = 35 C 15 16 17 30 25 CI3, Freq = 12.5 GHz, Temp = 85 C 20 CI3, Freq = 13.5 GHz, Temp = 85 C 15 CI3, Freq = 14.5 GHz, Temp = 85 C 10 CI3, Freq = 15.5 GHz, Temp = 85 c 5 0 14 35 18 19 Output Power (dBm per tone) 20 21 22 0 14 15 16 17 18 19 20 21 22 Output Power (dBm per tone) 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1043-QH Power Amplifier 12.0-16.0 GHz Rev. V1 MTTF These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. XP1043-QH-0G00: MTTF hours vs Package Base Temperature Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA 1.0E+14 1.0E+13 1.0E+12 MTTF (hours) 1.0E+11 1.0E+10 1.0E+09 1.0E+08 1.0E+07 1.0E+06 1.0E+05 1.0E+04 1.0E+03 20 30 40 50 60 70 80 90 100 110 120 130 Package Base Temp (C) XP1043-QH-0G00: Tch vs Package Base Temperature Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA 225 200 Tch (C) 175 150 125 100 75 50 20 30 40 50 60 70 80 90 100 110 120 130 Package Base Temp (C) XP1043-QH-0N00: Operating Power De-rating Curve (continuous) 6 5 Pdiss (W) 4 3 2 1 0 25 50 75 100 125 150 175 Package Base Temp (C) 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1043-QH Power Amplifier 12.0-16.0 GHz Rev. V1 App Note [1] Biasing - As shown in the Pin Designations table, the device is operated under the nominal bias conditions of VD1,2,3 at 7.0V with 100, 200, 400mA respectively. The device can also be safely biased to a maximum of 9 V and 1.4 A to provide greater than 2 Watts of saturated RF power. It is recommended to use active bias to keep the currents constant in order to maintain the best performance over temperature. Under heavy RF saturation the device will tend to self bias and pull the desired drain current. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -1.0V. Make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling caps as close to the bias pins as possible, with additional 10F decoupling caps. App Note [3] Power Detector - As shown in the schematic below, the power detector is implemented by providing +5V bias and measuring the difference in output voltage with standard op-amp in a differential mode configuration. Bias Circuit R To Gate From Bias Circuit The output impedance of the bias circuit's gate output should be small. When in saturation, the gates of the XP1043-QH can draw several mA which may cause adverse affects in a gate circuit with high output impedance. It is recommended that an Emitter Follower circuit be used (shown above), which follows the bias circuit's gate output. This will result in a high-input impedance, low-output impedance buffer between the gate output of the bias circuit and the gate input of the XP1043-QH. -5V Emitter Follower placed between the (gate) output of the bias circuit MMIC gate 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. XP1043-QH Power Amplifier 12.0-16.0 GHz Rev. V1 Lead-Free Package Dimensions/Layout Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.