• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
Power Amplifier
12.0-16.0 GHz
XP1043-QH
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Rev. V1
Features
32 dBm Saturated RF Power
41 dBm Output IP3 Linearity
17 dB Gain Control
On-Chip Power Detector
Lead-Free 4 mm 24-lead PQFN Package
100% RF Testing
RoHS* Compliant and 260°C Reflow Compatible
Description
The XP1043-QH is a packaged linear power
amplifier that operates over the 12.0-16.0 GHz
frequency band. The device provides 21.5 dB gain
and 41 dBm Output Third Order Intercept Point
(OIP3) across the band and is offered in an industry
standard, fully molded 4x4mm QFN package. The
packaged amplifier is comprised of a three stage
power amplifier with an integrated, temperature
compensated on-chip power detector. The device
includes on-chip ESD protection structures and DC
by-pass capacitors to ease the implementation and
volume assembly of the packaged part. The device
is manufactured in GaAs pHEMT device technology
with BCB wafer coating to enhance ruggedness and
repeatability of performance. This device is specially
designed for use in Point-to-Point Radio systems for
cellular backhaul applications, and is well suited for
other telecom applications such as SATCOM and
VSAT.
Ordering Information
Part Number Package
XP1043-QH-0G00 bulk quantity
XP1043-QH-0G0T tape and reel
XP1043-QH-EV1 evaluation module
Functional Schematic
Pin Configuration
Pin No. Function Pin No. Function
1-2 Ground 13-14 Not Connected
3 Not Connected 15 RF Output
4 RF Input 16 Not Connected
5-6 Ground 17-18 Ground
7 Gate 1 Bias 19 Drain 3 Bias
8 Gate 2 Bias 20 Drain 2 Bias
9 Gate 3 Bias 21 Drain 1 Bias
10 Not Connected 22-23 Ground
11 Pwr Det 24 Not Connected
12 Pwr Det Ref
Absolute Maximum Ratings 1,2
Parameter Absolute Max.
Supply Voltage (Vd1,2,3) +8.0 V
Supply Current (Id1,2,3) 1500 mA
Gate Bias Voltage (Vg1,2,3) -2.4 V
Max Power Dissipation (Pdiss) 5.5W
RF Input Power +19 dBm
Operating Temperature (Ta) -55 °C to +85 °C
Storage Temperature (Tstg) -65 °C to +150 °C
Channel Temperature (Tch) 165 °C
MSL Level (MSL) MSL3
ESD Min.-Machine Model (MM) Class A
ESD Min.-Human Body Model (HBM) Class 1A
(1) Minimum specifications are set under nominal (typ.) bias conditions.
Bias can be adjusted higher to achieve greater linearity and power;
however, maximum total power dissipated is specified at 5.5 W
(2) Channel temperature directly affects a device’s MTTF. Channel
temperature should be kept as low as possible to maximize lifetime.
1
2
3
4
16
15
14
13
10
GND
5
6
17
18
RF IN
VD3VD2VD1GND
GND
nc
GND
GND
GND
RF OUT
GND
nc
nc
nc
GNDnc
ncVG1 VG2 VG3 Vdet Vref
11
12
7
8
9
24
23
22
21
20
19
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2
Power Amplifier
12.0-16.0 GHz
XP1043-QH
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Rev. V1
Electrical Specifications: 12.0-16.0 GHz (Ambient Temperature T = 25°C)
Parameter Units Min.
3
Typ. Max.
Small Signal Gain (S21) dB 19.0 21.5
Input Return Loss (S11) dB 10.0 15.0
Output Return Loss (S22) dB 10.0 10.0
Reverse Isolation (S12) dB 55.0
P1dB dBm 30.0
Psat dBm 31.0 32.0
OIP3 at Pout = 18 dBm per Tone dBm 40.0 41.0
Power Detector Range dB - 37.0 -
Drain Bias Voltage (Vd1,2,3) VDC 7.0 7.0
Detector Bias Voltage (Vdet,ref) VDC 5.0
Gate Bias Voltage (Vg1,2,3) VDC -2 -1.0 0.0
Supply Current (Id1) mA 100 200
Supply Current (Id2) mA 200 400
Supply Current (Id3) mA 400 800
3. Minimum specifications are set under nominal (typ.) bias conditions. Bias can be adjusted higher to achieve greater linearity and power.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
3
Power Amplifier
12.0-16.0 GHz
XP1043-QH
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Rev. V1
Recommended Layout
Recommended Decoupling Capacitors: 100pF 0402, 10µF 0805
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
4
Power Amplifier
12.0-16.0 GHz
XP1043-QH
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Rev. V1
Typical Performance Curves
XP1043-QH: S-parameters (dB) vs. Freq (GHz),
(VDD=7V, ID1=100mA, ID2=200mA, ID3=400mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
10 11 12 13 14 15 16 17 18
Freq (GHz)
S-parameter (dB)
S21
S11
S22
XP1043-QH: Pout (dBm) vsPin (dBm) at Room Temp.
Vd = 7 V, Iq = 700mA
10
12
14
16
18
20
22
24
26
28
30
32
34
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Output Power (dBm)
Pout, F req = 12.5 G Hz
Pout, F req = 13.0 G Hz
Pout, Freq = 1 3 .5 G Hz
Pout, Freq = 1 4 .0 G Hz
Pout, F req = 14.5 G Hz
Pout, F req = 15.0 G Hz
Pout, F req = 15.5 G Hz
XP1043-QH: Pout (dBm) vsPin (dBm) at +85 °C.
Vd = 7 V, Iq = 700mA
10
12
14
16
18
20
22
24
26
28
30
32
34
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Output Power (dBm)
Pout, F r e q = 1 2.5 G Hz
Pout, F r e q = 1 3.0 G Hz
Pout, F r e q = 1 3.5 G Hz
Pout, F r e q = 1 4.0 G Hz
Pout, F r e q = 1 4.5 G Hz
Pout, F r e q = 1 5.0 G Hz
Pout, Freq = 1 5.5 G Hz
XP1043-QH: V_Detect (mV) vs Output Power (dBm)
Freq = 12.5-15.5 GHz, Temp = -45 to 85 Degree C
10
100
1000
10000
0 3 6 9 12 15 18 21 24 27
Output Power (dBm)
Detector Voltage = Vref - Vdet (mV)
12.5GHz, 25C
15.5GHz, 25C
12.5GHz, -45C
15.5GHz, -45C
12.5GHz, 85C
15.5GHz, 85C
XP1043-QH: C/I3 (dBc) vsPout per Tone (dBm) at Room Temp.
Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz
0
5
10
15
20
25
30
35
40
45
50
55
60
14 15 16 17 18 19 20 21 22
Output Power (dBm per tone)
CI/3 (dBc)
CI3, Freq = 12.5 GHz, Temp = 35 C
CI3, Freq = 13.5 GHz, Temp = 35 C
CI3, Freq = 14.5 GHz, Temp = 35 C
CI3, Freq = 15.5 GHz, Temp = 35 C
XP1043-QH: C/I3 (dBc) vsPout per Tone (dBm) at at +85 °C.
Vd=7 V, Id=700 mA. 12.5 to 15.5 GHz
0
5
10
15
20
25
30
35
40
45
50
55
60
65
14 15 16 17 18 19 20 21 22
Output Power (dBm per tone)
CI/3 (dBc)
CI3, Freq = 12.5 GHz, Temp = 85 C
CI3, Freq = 13.5 GHz, Temp = 85 C
CI3, Freq = 14.5 GHz, Temp = 85 C
CI3, Freq = 15.5 GHz, Temp = 85 c
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
5
Power Amplifier
12.0-16.0 GHz
XP1043-QH
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Rev. V1
MTTF
These numbers were calculated based on accelerated life test information and thermal model analysis re-
ceived from the fabricating foundry.
XP1043-QH-0G00: MTTF hours vs Package Base Temperature
Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA
1.0E+03
1.0E+04
1.0E+05
1.0E+06
1.0E+07
1.0E+08
1.0E+09
1.0E+10
1.0E+11
1.0E+12
1.0E+13
1.0E+14
20 30 40 50 60 70 80 90 100 110 120 130
Package Base Temp (°C)
MTTF (hours)
XP1043-QH-0N00: Operating Power De-rating Curve (continuous)
0
1
2
3
4
5
6
25 50 75 100 125 150 175
Package Base Temp (ºC)
Pdiss (W)
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
6
Power Amplifier
12.0-16.0 GHz
XP1043-QH
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Rev. V1
App Note [1] Biasing - As shown in the Pin Designations table, the device is operated under the nominal bias
conditions of VD1,2,3 at 7.0V with 100, 200, 400mA respectively. The device can also be safely biased to a
maximum of 9 V and 1.4 A to provide greater than 2 Watts of saturated RF power. It is recommended to use ac-
tive bias to keep the currents constant in order to maintain the best performance over temperature. Under heavy
RF saturation the device will tend to self bias and pull the desired drain current. Depending on the supply volt-
age available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate
of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage
needed to do this is -1.0V. Make sure to sequence the applied voltage to ensure negative gate bias is available
before applying the positive drain supply.
App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling
caps as close to the bias pins as possible, with additional 10μF decoupling caps.
App Note [3] Power Detector - As shown in the schematic below, the power detector is implemented by provid-
ing +5V bias and measuring the difference in output voltage with standard op-amp in a differential mode configu-
ration.
Bias Circuit
The output impedance of the bias circuit’s gate output
should be small. When in saturation, the gates of the
XP1043-QH can draw several mA which may cause ad-
verse affects in a gate circuit with high output impedance. It
is recommended that an Emitter Follower circuit be used
(shown above), which follows the bias circuit’s gate output.
This will result in a high-input impedance, low-output im-
pedance buffer between the gate output of the bias circuit
and the gate input of the XP1043-QH.
R
-5V
To Gate
From Bias
Circuit
Emitter Follower placed between the
(gate) output of the bias circuit MMIC gate
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
7
Power Amplifier
12.0-16.0 GHz
XP1043-QH
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Rev. V1
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
Lead-Free Package Dimensions/Layout