Reflexlichtschranke im SMT-Gehause Reflective Interrupter in SMT Package SFH 9201 Wesentliche Merkmale Features * * * * * * * * * * * * * * Optimaler Arbeitsabstand 1 mm bis 5 mm IR-GaAs-Lumineszenzdiode: Sender Si-NPN-Fototransistor: Empfanger Tageslichtsperrfilter Hoher Kollektor-Emitter-Strom typ. 0.7 mA Geringe Sattigungsspannung Sender und Empfanger galvanisch getrennt Optimal operating distance 1 mm to 5 mm IR-GaAs-emitter Silicon NPN phototransistor detector Daylight filter against undesired light effects High collector-emitter current typ. 0.7 mA Low saturation voltage Emitter and detector electrically isolated Anwendungen Applications * Positionsmelder * Drehzahluberwachung, -regelung * Bewegungssensor * * * * Typ Type Position reporting End position switch Speed monitoring and regulating Motion transmitter ICE IF = 10 mA, VCE = 5 V, d = 1 mm Bestellnummer Ordering Code mA SFH 9201 Q62702-P5038 0.25 ... 2.00 SFH 9201-2/3 Q62702-P5056 0.40 ... 1.25 SFH 9201-3/4 Q62702-P5057 0.63 ... 2.00 2001-11-21 1 SFH 9201 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Sperrspannung Reverse voltage VR 5 V Vorwartsgleichstrom Forward current IF 50 mA Verlustleistung Power dissipation Ptot 80 mW Dauer-Kollektor-Emitter-Sperrspannung Continuous collector-emitter voltage VCE 16 V Kollektor-Emitter-Sperrspannung, (t 2 min) Collector-emitter voltage, (t 2 min) VCE 30 Emitter-Kollektor-Sperrspannung Emitter-collector voltage VEC 7 Kollektorstrom Collector current IC 10 mA Verlustleistung Total power dissipation Ptot 100 mW Lagertemperatur Storage temperature range Tstg - 40 ... + 85 C Umgebungstemperatur Ambient temperature range TA - 40 ... + 85 Elektrostatische Entladung Electrostatic discharge ESD 2 Umweltbedingungen / Environment conditions 3 K3 acc. to EN 60721-3-3 (IEC 721-3-3) Sender (GaAs-Diode) Emitter (GaAs diode) Empfanger (Si-Fototransistor) Detector (silicon phototransistor) Reflexlichtschranke Light Reflection Switch 2001-11-21 2 KV SFH 9201 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Durchlaspannung Forward voltage IF = 50 mA VF 1.25 ( 1.65) V Sperrstrom Reverse current VR = 5 V IR 0.01 ( 1) A Kapazitat Capacitance VR = 0 V, f = 1 MHz CO 25 pF Warmewiderstand1) Thermal resistance1) RthJA 400 K/W Kapazitat Capacitance VCE = 5 V, f = 1 MHz CCE 10 pF Kollektor-Emitter-Reststrom Collector-emitter leakage current VCE = 20 V ICEO 3 ( 200) nA Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) VCE = 5 V, EV = 1000 Lx IP 3.5 mA Warmewiderstand1) Thermal resistance1) RthJA 400 K/W Sender (IR-GaAs-Diode) Emitter (IR-GaAs diode) Empfanger (Si-Fototransistor) Detector (silicon phototransistor) 2001-11-21 3 SFH 9201 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kollektor-Emitterstrom Collector-emitter current Kodak neutral white test card, 90% Reflexion IF = 10 mA; VCE = 5 V; d = 1 mm ICE min. ICE typ. 0.25 0.70 mA mA Kollektor-Emitter-Sattigungsspannung Collector-emitter-saturation voltage Kodak neutral white test card, 90% Reflexion IF = 10 mA; d = 1 mm; IC = 85 A VCE sat 0.15 ( 0.6) V Reflexlichtschranke Light Reflection Switch 1) Montage auf PC-Board mit > 5 mm2 Padgroe 1) Mounting on pcb with > 5 mm2 pad size d Reflector with 90% reflexion (Kodak neutral white test card) OHM02257 2001-11-21 4 SFH 9201 Schaltzeiten (TA = 25 C, VCC = 5 V, IC = 1 mA1), RL = 1 k) Switching Times F RL C VCC Output OHM02258 Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Einschaltzeit Turn-on time tein ton 65 s Anstiegzeit Rise time tr 50 s Ausschaltzeit Turn-off time taus toff 55 s Abfallzeit Fall time tf 50 s 1) IC eingestellt uber den Durchlastrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom Bauteil (d) 1) IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between reflector and component (d) 2001-11-21 5 SFH 9201 Collector Current C IC - = f ( d ) --------I Cmax Permissible Power Dissipation for Diode and Transistor Ptot = f (TA ) OHO02255 100 C max % OHO02260 160 Ptot Switching Characteristics t = f (RL) TA = 25 C, IF = 10 mA OHO00785 10 3 Total power dissipation t mW C = 100 A s 80 120 t on Detector t off 60 Emitter 80 10 2 t on t off 40 C = 1 mA 40 20 Kodak neutral white test card Mirror 0 0 0 1 2 3 4 mm 5 d Max. Permissible Forward Current IF = f (T A ) OHO02259 120 0 20 40 60 80 C 100 10 1 -1 10 k RL 10 0 TA Transistor Capacitance (typ.) CCE = f (VCE), TA = 25 C, f = 1 MHz OHO00374 50 10 1 Collector Current IC = f (IF), spacing d to reflector = 1 mm, 90% reflection OHO00783 3.0 F mA pF C mA 100 C CE 40 2.5 35 80 2.0 30 25 60 1.5 20 40 1.0 15 VCE = 5 V 10 20 0.5 5 0 0 0 20 40 60 80 C 100 10 -2 10 -1 10 0 TA Forward Voltage (typ.) of the Diode VF = f (T) OHO02256 1.30 VF V 1.25 10 1 V VCE 10 2 Relative Spectral Emission of Emitter (GaAs) Irel = f () and Detector (Si) Srel = f () OHO00786 100 rel S rel % 0 2.0 1.6 F = 20 mA 10 mA 4 8 12 16 mA 20 F Output Characteristics (typ.) IC = f (VCE), spacing to reflector: d = 1 mm, 90% reflection, TA = 25 C C mA 80 1.20 0 OHO00781 F = 25 mA F = 20 mA 1.4 1.2 60 5 mA F = 15 mA 1.0 1.15 Detector 0.8 40 1.10 F = 10 mA 0.6 0.4 20 1.05 F = 5 mA 0.2 Emitter 1 -40 -20 2001-11-21 0 20 40 60 C T 100 0 700 800 900 1000 nm 1100 6 0 0.1 10 0 10 1 V VCE SFH 9201 Mazeichnung Package Outlines 6.2 (0.244) (0.4 (0.016) typ.) 6 1 2 3 5 0...0.1 (0...0.004) B 2.1 (0.083) 1.7 (0.067) (0.05 (0.002) typ.) 3.8 (0.150) 2.54 (0.100) Raster (spacing) (1.2 (0.047) typ.) 0.5 (0.020) 0.3 (0.012) Sender/Emitter 4.2 (0.165) 1.27 (0.050) Raster (spacing) A (0.1 (0.004) typ.) 5.8 (0.228) 3.4 (0.134) 3.0 (0.118) (5) 0.15 (0.006) 0.13 (0.005) 0.2 M A 4 Chip Positionen Empfanger/Receiver 0.1 M B GPLY0504 Type 1 2 3 4 5 6 SFH 9201 Anode - Emitter Collector - Cathode Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-11-21 7 SFH 9201 Lothinweise Soldering Conditions Bauform Type SFH 9201 Drypack Tauch-, Schwalllotung Reflowlotung Level acc. Dip, Wave Soldering Reflow Soldering to Peak Temp. Max. Time in Peak Temp. Max. Time IPS-stand. (solderbath) Peak Zone (package in Peak 020 temp.) Zone 4 n. a. 245 C - 10 sec. Kolbenlotung Iron Soldering (Iron temp.) n.a. Bitte Verarbeitungshinweise fur SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-11-21 8