SFH 9201
Reflexlichtschranke im SMT-Gehäuse
Reflective Interrupter in SMT Package
2001-11-21 1
Wesentliche Merkmale
• Optimaler Arbeitsabstand 1 mm bis 5 mm
• IR-GaAs-Lumineszenzdiode: Sender
• Si-NPN-Fototransistor: Empfänger
• Tageslichtsperrfilter
• Hoher Kollektor-Emitter-Strom typ. 0.7 mA
• Geringe Sättigungsspannung
• Sender und Empfänger galvanisch getrennt
Anwendungen
• Positionsmelder
• Drehzahlüberwachung, -regelung
• Bewegungssensor
Typ
Type Bestellnummer
Ordering Code ICE
IF = 10 mA, VCE = 5 V, d = 1 mm
mA
SFH 9201 Q62702-P5038 0.25 … 2.00
SFH 9201-2/3 Q62702-P5056 0.40 … 1.25
SFH 9201-3/4 Q62702-P5057 0.63 … 2.00
Features
• Optimal operating distance 1 mm to 5 mm
• IR-GaAs-emitter
• Silicon NPN phototransistor detector
• Daylight filter against undesired light effects
• High collector-emitter current typ. 0.7 mA
• Low saturation voltage
• Emitter and detector electrically isolated
Applications
• Position reporting
• End position switch
• Speed monitoring and regulating
• Motion transmitter
2001-11-21 2
SFH 9201
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Sender (GaAs-Diode)
Emitter (GaAs diode)
Sperrspannung
Reverse voltage VR5V
Vorwärtsgleichstrom
Forward current IF50 mA
Verlustleistung
Power dissipation Ptot 80 mW
Empfänger (Si-Fototransistor)
Detector (silicon phototransistor)
Dauer-Kollektor-Emitter-Sperrspannung
Continuous collector-emitter voltage VCE 16 V
Kollektor-Emitter-Sperrspannung, (t ≤ 2 min)
Collector-emitter voltage, (t ≤ 2 min) VCE 30
Emitter-Kollektor-Sperrspannung
Emitter-collector voltage VEC 7
Kollektorstrom
Collector current IC10 mA
Verlustleistung
Total power dissipation Ptot 100 mW
Reflexlichtschranke
Light Reflection Switch
Lagertemperatur
Storage temperature range Tstg – 40 …+ 85 °C
Umgebungstemperatur
Ambient temperature range TA– 40 …+ 85
Elektrostatische Entladung
Electrostatic discharge ESD 2 KV
Umweltbedingun gen / Environmen t conditions 3 K3 acc. to EN 60 721-3-3 (IEC 721-3-3)
SFH 9201
2001-11-21 3
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Sender (IR-GaAs-Diode)
Emitter (IR-GaAs diode)
Durchlaβspannung
Forward voltage
IF = 50 mA
VF1.25 (≤ 1.65) V
Sperrstrom
Reverse current
VR = 5 V
IR 0.01 (≤ 1) µA
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
CO25 pF
Wärmewiderstand1)
Thermal resistance1) RthJA 400 K/W
Empfänger (Si-Fototransistor)
Detector (silicon phototransistor)
Kapazität
Capacitance
VCE = 5 V, f = 1 MHz
CCE 10 pF
Kollektor-Emitter-Reststrom
Collector-emitter leakage current
VCE = 20 V
ICEO 3 (≤ 200) nA
Fotostrom (Fremdlichtempfindlichkeit)
Photocurrent (outside light density)
VCE = 5 V, EV = 1000 Lx
IP3.5 mA
Wärmewiderstand1)
Thermal resistance1) RthJA 400 K/W
2001-11-21 4
SFH 9201
Reflexlichtschranke
Light Reflection Switch
Kollektor-Emitterstrom
Collector-emitter current
Kodak neutral white test card, 90% Reflexion
IF = 10 mA; VCE = 5 V; d = 1 mm
ICE min.
ICE typ.
0.25
0.70 mA
mA
Kollektor-Emitter-Sättigungsspannung
Collector-emitter-saturation voltage
Kodak neutral white test card, 90% Reflexion
IF = 10 mA; d = 1 mm; IC = 85 µA
VCE sat 0.15 (≤ 0.6) V
1) Montage auf PC-Boa rd m it > 5 mm 2 Padgröβe
1) Mounti ng on pcb with > 5 mm2 pa d size
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
OHM02257
d
Reflector
with 90% reflexion
(Kodak neutral white
test card)
SFH 9201
2001-11-21 5
Schaltzeiten (TA = 25 °C, VCC = 5 V, IC = 1 mA1), RL = 1 kΩ)
Switching Times
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Einschaltzeit
Turn-on time tein
ton
65 µs
Anstiegzeit
Rise time tr50 µs
Ausschaltzeit
Turn-off time taus
toff
55 µs
Abfallzeit
Fall time tf50 µs
1) IC eingestellt über den Durchlaβstrom d er Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom
Bauteil (d)
1) IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between
reflector and component (d)
OHM02258
Ι
FVCC
RL
Ι
COutput
SFH 9201
2001-11-21 6
Collector Current
Max. Permissible Forward Current
IF = f (TA)
Forwa rd Vo l t ag e (typ.) of the
Diode VF = f (T)
IC
ICmax
----------fd()=
0
OHO02255
Ι
C
d
0
max
C
Ι
20
40
60
80
%
100
1234mm5
Kodak neutral
white test card Mirror
0
OHO02259
Ι
F
A
T
020 40 60 80 100C
20
40
60
80
100
120
mA
1
OHO02256
T
-40
F
V
-20 0 20 40 60 100
1.05
1.10
1.15
1.20
1.25
1.30
V
5 mA
10 mA
Ι
F= 20 mA
C
Permissible Power Dissipation for
Diode and Transistor Ptot = f (TA )
Transistor Capacitance (typ.)
CCE = f (VCE), TA = 25 °C, f = 1 MHz
Relative Spectral Emiss ion of
Emitter (GaAs) Irel = f (λ) and
Detector (S i) Srel = f (λ)
0
OHO02260
P
tot
A
T
0 20 40 60 80 100C
40
80
120
mW
160 Total power dissipation
Detector
Emitter
OHO00374
10
CCE
-2
pF
V
CE
50
-1
10 0
10 1
10 2
10V
40
35
30
25
20
15
10
5
0
0
OHO00786
Srel
λ
700
rel
Ι
20
40
60
80
%
100
800 900 1000 nm 1100
Detector
Emitter
Switching Characteristics t = f (RL)
TA = 25 °C, IF = 10 mA
Collector Current IC = f (IF), spacing
d to reflector = 1 mm, 90% reflection
Output Characteristics (typ.)
IC = f (VCE), sp a cing to reflector:
d = 1 mm, 90 % refl ection , TA = 25 °C
OHO00785
t
L
R
10
1
10
-1
10
2
10
3
s
10
0
10
1
k
Ω
µ
Ι
C
100
µ
A
t
on
=
= 1 mA
C
Ι
t
off
t
on
t
off
OHO00783
0
C
Ι
mA
0
mA
F
Ι
0.5
1.0
1.5
2.0
2.5
3.0
4 8 12 16 20
=5 V
CE
V
V
OHO00781
CE
0.1
0
Ι
C
Ι
F
= 25 mA
= 20 mA
Ι
F
= 15 mA
Ι
F
= 10 mA
Ι
F
= 5 mA
Ι
F
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
mA
2.0
10 V
0
10
1
SFH 9201
2001-11-21 7
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
3.4 (0.134)
3.0 (0.118)
5.8 (0.228)
6.2 (0.244)
0.15 (0.006)
0.13 (0.005)
0...0.1 (0...0.004)
2.1 (0.083)
1.7 (0.067)
4
6
1
3
GPLY0504
4.2 (0.165)
3.8 (0.150)
25
0.3 (0.012)
0.5 (0.020)
Raster (spacing)
Raster (spacing)
(0.1 (0.004) typ.)
B
A
0.2 MA
Sender/Emitter
0.1 MB
2.54 (0.100)
1.27 (0.050)
(5˚)
(0.05 (0.002) typ.)
(1.2 (0.047) typ.)
(0.4 (0.016) typ.)
Empfänger/Receiver
Chip Positionen
Type 1 2 3 4 5 6
SFH 9201 Anode – Emitter Collector – Cathode
2001-11-21 8
SFH 9201
Bitte Verarbeitungshinweise für SMT-Bauele m ent e beachten!
Please obs erve the handl ing guidelines for SM T dev ic es !
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 may only be u se d in l i fe - su ppo rt de vi ce s o r sy ste ms 2 with the express written approval of OSRAM OS.
1 A critical c omponent is a compone nt used i n a life -support device or system whose failure ca n reaso nably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
Löthinweise
Soldering Conditions
Bauform
Type Drypack
Level acc.
to
IPS-stand.
020
Tauch-, Schwalllötung
Dip, Wave Soldering Reflowlötung
Reflow Soldering Kolbenlötung
Iron Soldering
Peak Temp.
(solderbath) Max. Time in
Peak Zone Peak Temp.
(package
temp.)
Max. Time
in Peak
Zone
(Iron temp.)
SFH 9201 4 n. a. –245 °C 10 sec. n.a.
