Diodes, Power Rectifier 5 Peak 1 Max. Meximun Forward Maximum Reverse ee eak Inverse oltage Dro Current Type Note Construction Voltage (PIV) ete P Outi tet Manufacturer (v) (A) aw) at Amps (uA) at Volts 19K Series 2 Si 3000 to 12,000 20mA - - - - - 104 IR AN248 - Si Junction 50 1a 1.5 25 SmA 50 00-5 105 GE IN249 - Si " 100 10 1.5 25 5mA 4100 DO-5 105 GE 1N250 - Si " 200 10 41.5 25 5SmA 200 D0-5 105 GE 4N645 - Si " 225 0.4 1 0.4 0.2 225 00-7 104 G,ITT ANG45A - Si " 225 O.4 1 0.4 0.2 225 b0-7 104 ITT IN646 - Si " 300 0.4 1 O.4 0.2 300 DO-7 1o4 G, ITT 4N647 - Si " 400 o.4 1 0.4 0.2 400 DO-7 104 G,1TT AN648 - Si 500 o.4 1 0.4 0.2 500 bo-7 104 G,1TT 1N649 - si " 600 0.4 4 o.4 0.2 600 DO-7 104 G,ITT 1N676 - Si 100 0.4 1 0.4 1 115 DO-7 104 ITT 4N677 - Si 4100 0.4 1 G.4 1 115 00-7 104 ITT 1N678 - Si 200 O.4 1 0.4 1 230 DO-7 104 ITT 1N679 - Si 200 0.4 1 0.4 1 230 00-7 104 ITT 1N681 - Si 300 o.4 4 0.4 1 300 Do-7 104 ITT 1IN682 - Si 300 a.4 1 0.4 1 300 bo-7 104 ITT 1N683 - Si 400 0.4 4 o.4 1 400 DO-7 104 qTT AN684 - Si 400 0.4 4 0.4 1 400 DO-7 104 ITT 1N1163 - Si 50 35 1.7 35 10mA 50 oo-5 105 GE ,Mo 1N1183A - si 50 35 1.7 35 10mA 50 bo0-5 106 GE ,Mo AN1184 - Si 400 35 4.7 35 AOmA 400 DO-5 105 GE ,Mo 4N1184R - Si 100 35 1.7 35 10mA 100 DO-5 106 GE ,Mo 1N1185 - Si 150 35 1.7 35 10mA 150 DO-5 105 GE 1N1185R - Si 150 35 1.7 35 10mA 150 Do-5 106 GE 4N1186 - Si 200 35 4.7 35 ADmA 200 DO-5 4105 GE ,Mo 1N1180R - Si 200 35 1.7 35 410mA 200 00-5 106 GE ,Mo 1N1187 - Si 300 35 1.7 35 10mA 300 DO-5 105 GE 1N1189R - Si 300 35 1.7 35 10mA 300 DD-5 106 BE 1N 1188 - Si 400 35 1.7 35 10mAa 400 bo-5 105 GE ,Mo 1N1188R - Si 400 35 1.7 35 10mA 400 DO-5 106 GE ,Mo 1N1189 - Si 500 35 1.7 35 10mA 500 bO-5 105 GE 1AN1189R - Si 500 35 1.7 35 40mA 500 oo0-5 106 GE 1N1190 - Si 600 35 1.7 35 10mA 600 DO-5 105 GE ,Mo 4N1190R - Si 600 35 1.7 35 10mA 600 00-5 106 GE ,Mo 4N 11998 4 Si Junction 50 12 0.55 12 3mA 50 oo-4 105 GE 4N12008 4 Si " 100 12 0.55 12 2.5mA 100 bo-4 105 + GE 1N1201A 4 Si " 150 12 0.55 12 2.25mA 150 bo-4 105 GE 1N1202A 4 Si " 200 12 0.55 12 2mA 200 bo-4 105 GE 1N1203A 4 Si " 300 12 0.55 12 1.75mA 300 bo-4 105 GE 1N1204A 4 Si " 400 12 0.55 12 1.5mA 400 bo-4 105 GE 1N1205A 4 Si " 500 12 0.55 12 1,25mA 500 Do-4 105 GE 1N1206A 4 Si " 600 12 0.55 12 4mA 606 00-4 105 GE 1N 134 1A 4 Si " 50 6 0.64 6 3mA 50 pdo-4 105 GE 1N13248 4 Si " 100 6 0.64 6 2.5mA 100 DO-4 105 GE 1N1343A 4 Si " 150 6 0.64 6 2,25mA 150 00-4 105 GE 1N13448 4 Si " 200 6 0.64 6 2mA 200 Do-4 105 GE AN1345A8 4 Si " 300 6 0.64 6 1.75mA 300 oa-4 105 GE 1N1346A 4 Si " 400 6 0.64 6 1.5mA 400 oo-4 105 GE 4AN1347A 4 Si " 500 6 0.64 6 1.25mA 500 bo-4 105 GE 1N 13488 4 Si " 600 6 0.64 6 mA 600 bO-4 105 GE 1N 16 12 & St " 50 5 0.64 5 4amA 50 00-4 105 GE 4N 1613 4 Si " 100 5 0.64 5 1mA 100 00-4 105 GE 1N16 14 4 Si " 200 5 0.64 5 mA 200 oo-4 105 GE 4N1615 & Si s 400 5 0.66 5 4mA, 400 oo-6 405 GE 1N1616 4 Si " 600 5 0.64 5 4mA 600 bO-& 105 GE 4N1730A - Si " 1000 0.35 3 o.4 41 1000 - 113 G 4N17318 - Si s 1500 0.35 3 o.4 4 4500 - 413 G 1N1732A - Si " 2000 0.35 3 0.4 1 2000 - 113 G 4N1733A - Si " 3000 0.35 6 o.4 1 3000 - 113 G 1N17348 - Si " 5000 0.35 8 0.4 1 5000 - 113 G 4N2154 & Si " 50 25 0.6 25 5mA 50 00-5 105 GE 4N2155 4 Si " 100 25 0.6 25 4&.5mA 100 DO-5 405 GE 1N2156 4 Si " 200 25 0.6 25 4mA 200 bO-5 105 GE 1N2157 4 Si 300 25 D.6 25 3.5mA 300 bo-5 405 GE 4N2158 & Si " 400 25 0.6 25 3mA 400 bo-5 405 GE 1N2159 4 Si 500 25 0.6 25 2.5mA 500 boO-5 105 GE 1N2160 4 Si " 600 25 0.6 25 2mA 600 bo-5 405 GE 4N3208 4 Si " 50 20 1.2 20 4mA 50 - 105 GE 1N3209 4 Si " 100 20 1.2 20 4mA 100 - 105 GE 1N3210 4 Si 200 20 1.2 20 4mA 200 - 105 GE