DATE DRAWN JAN.-25-` 07 CHECKED JAN.-25-` 07 CHECKED JAN.-25-` 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ir d par t y n or u s e d f or t he m an uf ac tur ing p urp os e s w ith ou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. S P E C I F I C AT I O N Device Name SILICON DIODE Type Name TP802C04RF192 Spec. No. MS5D3032 Fuji Electric Device Technology Co.,Ltd. MS5D3032 1/12 H04-004-07b Date JAN.-25 -2007 Classification Ind. Content Applied date Enactment Issued date Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. Revised Records Drawn Checked MS5D3032 Approved 2/12 H04-004-06b 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE TP802C04RF192 2. OUT VIEW, MARKING, MOLDING RESIN, FORMING,CHARACTERISTICS (1) Out view is shown (2) Marking is shown MS5D3032 8/12 MS5D3032 8/12 It is marked to type name or abbreviated type name, polarity and Lot No. (3) Molding resin Epoxy resin UL:V-0 (4) Forming is shown MS5D3032 MS5D3032 Bar Code Label of EIAJ C-3 Specification. (1) Type Name (2) Production Code (3) Quantity (4) Lot (Date code) (5) Company Code 10/1212/12 Indispensable description items are shown as below. 3. RATINGS 3.1 MAXIMUM RATINGS (at Ta=25 unless otherwise specified.) ITEM SYMBOL RATINGS UNITS 48 V 40 V 50Hz Square wave duty =1/2 Tc = 116 10 * A Sine wave, 10ms 1shot 120 A Tj 150 Tstg -40150 Repetitive peak surge reverse voltage VRSM Repetitive peak reverse voltage VRRM Average output current Io Non-repetitive forward surge current** IFSM Operating junction temperature Storage temperature * CONDITIONS tw=500ns,duty=1/40 Out put current of center tap full wave connection. ** Rating per element 3.2 ELECTRICAL CHARACTERISTICS ITEM (at Ta=25 unless otherwise specified.) SYMBOL CONDITIONS Forward voltage *** VF IF = 4 A Reverse current *** IR VR = VRRM Thermal resistance Rth(j-c) MAXIMUM UNITS 0.55 V 5 Junction to case 3 mA /W *** Rating per element 3.3 MECHANICAL CHARACTERISTICS Approximate mass Fuji Electric Device Technology Co.,Ltd. 1.6 DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. (5) Characteristics is shown 9/12 MS5D3032 g 3/12 H04-004-03a 4. TEST AND INSPECTION 4.1 STANDARD TEST CONDITION Standard test condition is Ta=2565%R.H. If judgment is no doubt, the test condition is possible to test in normal condition Ta=5354885%R.H. 4.2 STRUCTURE INSPECTION It inspect with eye and measure, Item 2 shall be satisfied. 4.3 FORWARD AND REVERSE CHARACTERISTICS It inspect on the standard condition, Item 3.2 shall be satisfied. 4.4 TEST Reference Test No. Items Testing methods and Conditions Standard EIAJ Sampling number Acceptance number ED4701 1 Terminal Pull force : 10N Strength Force maintaining duration :101s (Tensile) 2 Terminal Load force : 5N Strength Number of times : 2times(90deg./time) (Bending) 3 Vibration EIAJ ED4701/401 method 1 5 EIAJ ED4701/401 method 3 5 EIAJ ED4701/403 test code D 5 EIAJ ED4701/404 test code D 5 Frequency : 100Hz to 2kHz Acceleration : 100m/s 2 Sweeping time : 4min./1 cycle 4times for each X, Y&Z directions. Mechanical test 4 Shock Peak amplitude : 15km/s 2 Duration time : 0.5ms 3times for each X, Y&Z directions. 5 Solder ability 1 (0 : 1) EIAJ ED4701/303 test code A Solder : Sn-37Pb Solder temp. : 2355 5 Immersion time : 50.5s Apply to flux Solder ability 2 Solder : Sn-3Ag-0.5Cu Solder temp. : 2455 5 Immersion time : 50.5s Apply to flux 6 Resistance to Solder temp. : 2605C Soldering Immersion time : 101s Heat Number of times : 1times Fuji Electric Device Technology Co.,Ltd. EIAJ ED4701/302 test code A DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. Test MS5D3032 5 4/12 H04-004-03a Test Test No. Items 1 2 3 4 Reference Testing methods and Conditions Standard Sampling Acceptance number number EIAJ ED4701 High Temp. Temperature :stg max Storage Test duration : 1000h Low Temp. Temperature :stg min Storage Test duration : 1000h Temperature Temperature : 852C Humidity Relative humidity : 855% Storage Test duration : 1000h Temperature Temperature : 852C Humidity Relative humidity : 855% Bias Bias Voltage : VRRMx 0.8 EIAJ ED4701/201 22 EIAJ ED4701/202 22 EIAJ ED4701/103 test code C 22 EIAJ ED4701/103 test code C 22 EIAJ ED4701/103 test code F 22 EIAJ ED4701/105 22 EIAJ ED4701/307 test code A 22 5 Unsaturated Temperature : 1302C Pressurized Relative humidity : 855% Vapor Vapor pressure : 230kPa Test duration : 48h Endurance test 6 Temperature High temp. side : Tstg max Cycle Room temp. : 535 Low temp. side : Tstg min (0 : 1) Duration time : HT 30min,RT 5min LT 30min Number of cycles : 100 cycles 7 Thermal Fluid : pure water(running water) Shock High temp. side : 100+0/-5C Low temp. side : 0+5/-0C Duration time : HT 5min,LT 5min Number of cycles : 100 cycles 8 9 10 Steady state Ta=255C Operating Rated load life Test duration : 1000h Intermittent Tj=Tjmax 50 Operating 3min ON, 3min OFF life Test duration : 10000cycles High Temp. Temperature : Ta=100 C Reverse Bias Voltage : VR=VRRM duty=1/2 Bias Test duration : 1000h Failure Criteria IR USL x 2 22 EIAJ ED4701/106 22 EIAJ ED4701/101 22 USL : Upper specification Limit VFUSL x 1.1 Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. Test duration : 1000h MS5D3032 5/12 H04-004-03a 5.Cautions Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. The products described in this specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (Terminal devices) Measurement equipment Machine tools AV equipment Electrical home appliances Personal equipment Industrial robots etc. The products described in this Specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. If you are considering using these products in the equipment listed below, first check the system construction and required reliability, and take adequate Transportation equipment (automobiles, trains, ships, etc.) Backbone network equipment Traffic-signal control equipment Gas alarms, leakage gas auto breakers Submarine repeater equipment Burglar alarms, fire alarms, emergency equipment Medical equipment Nuclear control equipment etc. Do not use the products in this Specification for equipment requiring strict reliability such as (but not limited to): Aerospace equipment Aeronautical equipment 6.Warnings The Diodes should be used in products within their absolute maximum rating (voltage, current, temperature, etc. ). The diodes may be destroyed if used beyond the rating. The equipment containing Diodes should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction (ex. fire, explosion etc...). Use the Diodes within their reliability and lifetime under certain environments or conditions. The Diodes may fail before the target lifetime of your products if used under certain reliability conditions. You must design the Diodes to be operated within the specified maximum ratings (voltage, current, temperature, etc. ) to prevent possible failure or destruction of devices. Consider the possible temperature rise not only for the junction and case, but also for the outer leads. Do not directly touch the leads or package of the Diodes while power is supplied or during operation, to avoid electric shock and burns. The Diodes are made of incombustible material. However, if a Diode fails, it may emit smoke of flame. Also, operating the Diodes near any flammable place or material may cause the Diodes to emit smoke or flame in case the Diodes become even hotter during operation. Design the arrangement to prevent the spread of fire. The Diodes should not used in an environment in the presence of acid, organic matter, or corrosive gas. (hydrogen sulfide, sulfurous acid gas.) The Diodes should not used in an irradiated field since they are not radiation proof. Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. safety measures such as a backup system to prevent the equipment from malfunctioning. MS5D3032 6/12 H04-004-03a Installation Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Table 1: Solder temperature and duration Solder Method Duration temperature Flow 2605 101sec Soldering iron 35010 3.50.5sec The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. When flow-soldering, be careful to avoid immersing the package in the solder bath. The Diodes must be stored at a standard temperature of 5 to 35 and relative humidity of 45 to 75%.If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. The Diodes should not be subjected to rapid changes in temperature to avoid condensation on the surface of the Diodes. Therefore, store the Diodes in a place where the temperature is steady. The Diodes should not be stored on top of each other, since this may cause excessive external force on the case. The Diodes should not be stored with the lead terminals remaining unprocessed. Rust may cause presoldered connections to go fail during later processing. The Diodes should be stored in antistatic containers or shipping bags. 7.Appendix This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ) , substances. This products does not contain Class-I ODS and Class-II ODS substances set force by ` Cl eanAi r ActofUS' law. If you have any questions about any part of this Specification, please contact Fuji Electric Device Technology or its sales agent before using the product Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. The application examples described in this specification are merely typical uses of Fuji Electric DeviceTechnology products. This specification does not confer any industrial property rights or other rights, nor constitute a license for such rights. Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. Storage MS5D3032 7/12 H04-004-03a Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. Sn-Cu dipping(Pb1000ppm) MS5D3032 8/12 H04-004-03a DWG.NO. Fuji Electric Device Technology Co.,Ltd. MS5D3032 9/12 H04-004-03a T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. 2.0 3.5 3.0 0 0.2 0.4 VF Square wave =60 1 2 Io (W) 0.1 0.0 Square wave =120 Sine wave =180 2.5 Square wave =180 DC Reverse Power Dissipation IF 1 IR Forward Current (A) Tj=125C Tj=100C Tj=25C 0.6 0.8 3 Average Output Current Reverse Current (mA) Tj=150C 1.0 4 1.2 5 1.4 5.5 I0 1.5 1.0 Fuji Electric Device Technology Co.,Ltd. DWG.NO. Forward Power Dissipation 4.0 PR (W) 4.5 WF T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. 100 Forward Characteristic (typ.) 102 Reverse Characteristic (typ.) Tj=150C 101 Tj=125C 10 Tj=100C 100 10-1 Tj=25C 10-2 10-3 Forward Voltage (V) 0 0.0 6 10 VR Forward Power Dissipation (max.) 0 5 10 Reverse Voltage (V) 20 15 VR 30 20 25 MS5D3032 40 6 Reverse Voltage 30 35 50 6.0 Reverse Power Dissipation (max.) 360 DC 5.0 5 360 VR 4 3 =180 2 1 0.5 Per 1element 0 (V) 40 45 50 (A) 10/12 H04-004-03a Cj Tc Case Temperature 120 (C) Square wave =180 110 Square wave =120 90 360 80 0 1 2 4 Io Average Output Current 6 8 10 10 12 (A) 14 Junction Capacitance (pF) Sine wave =180 Fuji Electric Device Technology Co.,Ltd. DWG.NO. IFSM Peak Half - Wave Current (A) T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. 160 Current Derating (Io-Tc) (max.) 1000 Junction Capacitance Characteristic (typ.) 150 140 130 DC 100 100 Square wave =60 I0 VR=20V V 70 16 :Conduction angle of forward current for each rectifier element VR 10 Reverse Voltage (V) 100 Io:Output current of center-tap full wave connection 1000 Surge Capability (max.) 100 10 Number of Cycles at 50Hz 100 MS5D3032 11/12 H04-004-03a 10-1 10-3 10-2 10-1 T Time Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t er i a l an d t he i n fo r m a t i on h e r e in i s t he pr o p er t y o f Fuji Electric D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d pa r t y n o r u s e d f or the m an uf ac t ur in g pur po se s w it hou t the express written consent of Fuji Electri c Device Technology Co .,Ltd. Transient Thermal Impedance (C/W) 10 2 Transient Thermal Impedance (max.) 101 Rth j-c:3.0C/W 100 (sec) 100 101 102 MS5D3032 12/12 H04-004-03a